JPS5853507B2 - Handout Taisouchino Seizouhouhou - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for dividing a semiconductor wafer into individual chips.

There are several methods for dividing a wafer, but the most commonly used method is the scribing method.

That is, this is a method in which a scratch line is drawn on the semiconductor substrate using a diamond or the like with a polished tip, a crack is created, and the semiconductor substrate is cut.

Recently, the laser scribing method, which uses a laser for drawing lines, has become popular.

Problems with this scribing process include the occurrence of contamination and scratches on the chip surface after the diffusion process.

In fact, it is inevitable that chips and dust particles will adhere to the chip surface when making scratch lines.

To remove these deposits, the scriber is generally equipped with a dust collector or washed with an organic solvent after drawing.

However, it is difficult to completely remove deposits using these methods.

Particularly in the laser scribing method, as shown in FIG. 1, molten droplets 3 or dust particles 3' are burned into the passivation glass layer 2 deposited on the semiconductor substrate 1, making it almost impossible to remove them.

Note that 4 indicates a line drawing groove. The present invention solves this problem and provides a scribing method that does not damage the chip surface.

That is, this is a method in which a protective photosensitive resin film (hereinafter referred to as a resist film) is formed on the chip surface and then a scratch line is created using a scriber.

It is most efficient to use the resist film used for opening the pad window of the passivation phosphor glass layer as it is without peeling it off, without increasing the number of steps.

In addition, from the viewpoint of enhancing the protective effect, it is preferable that the resist film is thick (0.5 μm or more).

FIG. 2 is a sectional view of a wafer after scribing according to the present invention.

Melt droplets 3 and dust particles 3' generated during the formation of the line drawing grooves 4 adhere to the resist film 5 without directly touching the chip surface as shown in FIG.

Thereafter, when the above-mentioned cyst film 5 is removed by chemical dissolution or thermal decomposition, which is generally carried out, both the droplets 3 and dust particles 3' attached thereto are completely removed.

The scribing method according to the present invention removes deposits that lead to defects in the characteristics or appearance of semiconductor devices.
2 can be completely removed using the resin film used to open the window, greatly improving the yield in the scribing process without increasing the number of steps in the original process.

Its effectiveness is especially important in the production of optical elements where contamination of the chip surface is not allowed.

[Brief explanation of drawings]

FIG. 1 is a schematic cross-sectional view of a semiconductor device after drawing a conventional scribe line, and FIG. 2 is a cross-sectional view of the same according to the present invention. 1...Semiconductor substrate, 2...Glass layer for passivation, 3...Splash, 3'...
・・・Dust gap, 4... Line drawing groove, 5...
Protective resist film.

Claims (1)

[Claims] 1 A process of forming a photosensitive resin film on a passivation film on the surface of a semiconductor device on which a large number of semiconductor devices are formed, and drilling a window in the passivation film, and a process of forming a photosensitive resin film on a passivation film on the surface of a semiconductor device on which a large number of semiconductor devices are formed, and drilling a window in the passivation film, and a process of forming a photosensitive resin film on a passivation film on the surface of a semiconductor device on which a large number of semiconductor devices are formed, and drilling a window in the passivation film, and a process of laser or A method for manufacturing a semiconductor device, comprising the steps of: making a dividing line on the semiconductor wafer exposed in the window using a scriber made of diamond or the like; and removing the resin film.