JPS5855830A - Measuring apparatus of surface stress - Google Patents

Measuring apparatus of surface stress

Info

Publication number
JPS5855830A
JPS5855830A JP15374581A JP15374581A JPS5855830A JP S5855830 A JPS5855830 A JP S5855830A JP 15374581 A JP15374581 A JP 15374581A JP 15374581 A JP15374581 A JP 15374581A JP S5855830 A JPS5855830 A JP S5855830A
Authority
JP
Japan
Prior art keywords
plate
stress
prism
measured
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15374581A
Other languages
Japanese (ja)
Other versions
JPS6244603B2 (en
Inventor
Kan Kishii
岸井 貫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15374581A priority Critical patent/JPS5855830A/en
Publication of JPS5855830A publication Critical patent/JPS5855830A/en
Publication of JPS6244603B2 publication Critical patent/JPS6244603B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/24Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet
    • G01L1/241Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet by photoelastic stress analysis

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

PURPOSE:To measure surface stress accurately, by a method wherein a laser beam is excited to run in parallel with a surface of an object to be measured, and surface stress is measured by utilizing a senarmount compensator according to the difference of photoelastic beam pathes arisen in the emitted beam. CONSTITUTION:A laser beam 8 emitted from a light source 29 is reflected at a prism 38 and reached to a glaze layer A of an object B to be measured. The beam further advances in the layer A, and then, a part of the beam passes through an exit prism 26, and through a quarter wave plate 43 which forms a senarmount compensator with a polarizing plate 32B, and is detected by a photodetector plate 47. When there is stress, it is observed as the contracted part 316 in a streak of light 313 by rotating the plate 47. The stress can be measured on the basis of the Senarmount law, by measuring the shift of the shadowed part 311 which is shifted as the plate 47 rotates.

Description

【発明の詳細な説明】 本発明は#1うろう製品、陶磁器製品等表面「ニガラス
質釉薬の飾石れた製品の表面応力を非破壊的に測定し得
る表面応力測定装置の改良C二関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to #1 an improvement in a surface stress measuring device capable of non-destructively measuring the surface stress of products decorated with vitreous glazes and stones such as porcelain products and ceramic products. .

上記の製品は表面を強化するために基体の表面(二釉薬
な被着させている。しかしながらこの基体と釉薬との間
i二はわずかではあるが熱膨張差があり、これを全く無
視することは出来ないのでなるべく近似されることが行
なわれているが同−Cユすることは現在の技術では不可
能で若干の差が生ずることは避けられない。特5:上記
釉薬の焼付時の面に平行表方向に応力が生ずる。この応
力の絶対値は膨張差の大小に比例し、応力が圧縮力かあ
るいは張力かは釉薬と基体との熱膨張の差の大きさによ
って決定する。
The above products are coated with two glazes on the surface of the base to strengthen the surface. However, there is a slight difference in thermal expansion between the base and the glaze, and this can be completely ignored. However, it is impossible with current technology to approximate the same as possible, so it is inevitable that some differences will occur.Feature 5: The surface of the above glaze during firing Stress is generated in the parallel surface direction.The absolute value of this stress is proportional to the magnitude of the expansion difference, and whether the stress is compressive or tensile is determined by the magnitude of the difference in thermal expansion between the glaze and the base.

釉薬の表面応力が張力であると、釉薬は自発的C二きれ
つを生ずるか、あるいは経時的にきれつを生ずるか、あ
るいは外力や衝撃によってきれつを生じやすく、実使用
上に不都合であるかあるいは商品価値を失ってしまう。
If the surface stress of the glaze is tension, the glaze either spontaneously cracks, cracks over time, or easily cracks due to external force or impact, which is inconvenient for practical use. Otherwise, the product value will be lost.

表面応力が大きな圧縮力であると、釉薬層は自発的なは
がれを起しやすい。
If the surface stress is a large compressive force, the glaze layer is likely to spontaneously peel off.

表面応力が適当な大きさの圧縮力であると、#1つろう
または陶磁器製品は、機械的にも化学的にも強く、製造
時の歩留り向上と使用時の耐久性向上という望ましい効
果がある〇 従って、製造g−当っては、釉薬が適当な大きさの圧縮
力C二なるよう(二、基体と釉薬とを組合わせに特に注
意はらって行なわれている。
If the surface stress is an appropriate amount of compressive force, #1 wax or ceramic products will be strong both mechanically and chemically, and have the desirable effects of improving yield during manufacturing and improving durability during use. Therefore, during production, special attention is paid to the combination of the substrate and glaze so that the glaze has an appropriate compressive force C2.

しかしながら上記においても多少の差を生じるのでこの
製造工程の管理が必要であり、この管理を非破壊的ζ二
行なえるように発明者は先に表面化測定感度を史に向上
させるべく検討を重ねたものである。すなわち上記表面
応カ計はその感度(精度)として1呻/−程度を有して
おり、これはほうろう、工業用あるいは工業用の一部C
ユ用いられる陶磁器等の狭面応力が5〜20に4/−程
度範囲の大きな応力がある場合C二は有効に適用出来る
が例えば測定精度がo、ib/−を要求される高級食器
@においては、測定困難となる場合がある。
However, since some differences occur in the above, it is necessary to control this manufacturing process, and in order to be able to perform this control non-destructively, the inventor first made repeated studies to improve the sensitivity of surface measurement. It is something. In other words, the above-mentioned surface stress meter has a sensitivity (accuracy) of about 1/-, which is equivalent to enamel, industrial use, or some industrial use.
C2 can be effectively applied when there is a large narrow surface stress in the ceramics used in the range of 5 to 20 to 4/-, but for example, in high-quality tableware where measurement accuracy of o, ib/- is required. may be difficult to measure.

本発明は上記の測定精度を十分Cユ保持できるようC二
したもので被測定物の表面を平行C二走行するレーザビ
ームを励起し、このビームを取り出しこの射出ビームC
二生ずる光弾性的ビーム路の差の測定をセナルモン補正
器の原理を用いて精度を向上させた表面応力測定装置を
提供する。
The present invention excites a laser beam that travels parallel to the surface of the object to be measured, extracts this beam, and extracts this emitted beam.
The present invention provides a surface stress measurement device that uses the principle of the Senarmont corrector to improve the accuracy of measuring the difference in photoelastic beam path that occurs between two photoelastic beam paths.

第1図は本発明表面応力測定装置の原理的説明図であっ
て基体(1)の表面I:釉薬層(2)が形成されている
。この釉薬層の表面(81ijがなりの粗面となってい
る。この釉薬層の表面には、この屑より屈折率の高い光
学ガラス製の入射プリズム(4)及び透光板(5)を挾
んで入射プリズム(4)と同特性を有する射出プリズム
(6)が夫々付設されている。また上記各プリズム(4
)及び(6)の下面と上記釉薬層(2)の表面(組との
わずかなすき間C二は上記プリズムと屈折率を近似させ
た液体(7)が注入しである。この液体(7)は、光学
的接触を助けるため(−用いられる。
FIG. 1 is an explanatory diagram of the principle of the surface stress measuring device of the present invention, and shows a surface I of a substrate (1): a glaze layer (2) is formed. The surface of this glaze layer (81ij is a rough surface). An entrance prism (4) and a transparent plate (5) made of optical glass having a higher refractive index than this scrap are placed on the surface of this glaze layer. An exit prism (6) having the same characteristics as the entrance prism (4) is attached to each of the prisms (4).
) and (6) and the surface of the glaze layer (2) (C2) is injected with a liquid (7) whose refractive index is similar to that of the prism. is used (- to aid in optical contact).

上記C二おいて予め集光されたレーザビーム(81ti
偏光板(第1図1′−は図示せず。第2図32bで示す
。)によってすで6−直線偏光に表っておりほぼ釉薬層
表面(111で焦点を結びかつ入射点(j)cおける垂
線翰に対し全反射臨界角(ψ0)をなすように投射され
る。
The laser beam (81ti
The polarizing plate (1' in Fig. 1 is not shown and shown in 32b in Fig. 2) has already produced 6-linearly polarized light, which is focused at approximately the surface of the glaze layer (111) and the incident point (j). It is projected so as to form a total reflection critical angle (ψ0) with respect to the vertical line at c.

そして偏光面は入射面に対し45°の角度をなすよう6
二なっている。また釉薬層(2)内≦二人射されたビー
ムの一部はこの表面(8)の弦に沿って伝播されてビー
ム+121 Q81等となって進行し、再び表面(8)
の各射出点541(2))から射出ビーム(至)(ロ)
となって放射される。
The plane of polarization is 6
It's two. In addition, a part of the beam emitted into the glaze layer (2) is propagated along the chord of this surface (8), becomes a beam +121 Q81, etc., and returns to the surface (8).
The emitted beam (to) (b) from each injection point 541 (2))
and is radiated.

例えば上記釉薬層(2)内部1:応力があり、その応力
は表面(8)からの深さC二はよらないと近似できる条
件で考えた場合、上記入射ビーム(8)の直線偏光は釉
薬層(2)内に入射後その表面に平行及び垂直方向Cそ
れぞれ振動する2つの直線偏光成分にわかれて進み、応
力による光弾性効果i二より2つの成分量C−ビームの
光路差が生ずることになる。この光路差をRとすれば光
弾性の公式(二より釉薬層の光弾性定数をCとすればF
を応力として釉薬層内のビーム(2)冨二生ずる光路差
(R) = c y x(入射点(9)と射出点に)と
の距離)。
For example, if we assume that there is stress inside the glaze layer (2) and that the stress does not depend on the depth C2 from the surface (8), then the linearly polarized light of the incident beam (8) is After entering the layer (2), it separates into two linearly polarized components that vibrate in parallel and perpendicular directions to the surface of the layer (2), respectively, and due to the photoelastic effect due to stress, an optical path difference between the two components (C-beam) occurs. become. If this optical path difference is R, then the photoelasticity formula (from 2), if the photoelastic constant of the glaze layer is C, then F
The optical path difference (R) caused by the beam (2) in the glaze layer with stress = c y x (distance between the incident point (9) and the exit point).

釉薬層内のビーム(至)に生ずる光路差(R) = o
 v x(入射点(9)と射出点(ロ)との距II)で
ある。これ等の光路差(R)は、それぞれ射出光(至)
(1’F)C保存されて光弾性的手段で測定される。
Optical path difference (R) generated in the beam within the glaze layer = o
v x (distance II between the entrance point (9) and the exit point (b)). These optical path differences (R) are the emitted light (to)
(1'F)C is stored and measured by photoelastic means.

この測定によって上記ビーム(2)及びα糧の間での光
路差(R)の差は、cyx[(入射点(9)と射出点(
至)の距離)−(入射点(9)と射出点に)の距離)〕
である。入射点(9)と射出点(ロ)及び(至)との間
の距離が釉薬層の表面(8)の曲率半径l二比較して十
分l二手さければ上記式の中括弧内は射出点に)と射出
点(至)の間の距離は等しいと近似できる。
As a result of this measurement, the difference in optical path difference (R) between the beam (2) and the α feed is determined by cyx [(incidence point (9) and exit point (
) - (distance between the incident point (9) and the exit point)]
It is. If the distance between the incident point (9) and the injection points (b) and (to) is sufficiently l2 compared to the radius of curvature l2 of the surface (8) of the glaze layer, then the value in the curly brackets in the above equation indicates injection. It can be approximated that the distance between the point ) and the exit point (to) are equal.

従って 上記ビーム(2)及びαB)の間での光路差只の差キ0
FX(射出点(2)邸)の距離)が成立し、Fが算出で
きること5二なる。
Therefore, the difference in optical path difference between the beams (2) and αB) is 0.
FX (distance of the injection point (2) house)) is established, and F can be calculated.

本発明は五記原理に基づき、光路差の測定をセナルモン
補整器を利用して完成させたもので、以下その実施例を
第2図を参照して詳細に説明する。
The present invention is based on the five principles and has completed the measurement of the optical path difference using a Senarmont compensator, and an embodiment thereof will be described in detail below with reference to FIG. 2.

基板−は全体を支持する支持台であって固定された足他
1)と、水平調整が行なえる可動足(転)とが付設され
ている。
The base plate is a support base that supports the entire body, and is provided with fixed feet (1) and movable feet that can be adjusted horizontally.

上記基板(社)の一部に固定されたプリズム支持枠−は
中央に遮光板−を背にして入射プリズム(7)及び射出
プリズム■)が保持されている。なお上記各フリスム例
(財))は直角三角形を呈し、斜面をビームが通過する
ようになり、かつ直角短辺が被測定物に当接する測定面
となるよう構成される。投射p“構cnは支持体□□□
)とレーザ光源−1と調量可能な第2反射プリズム■)
とから成り、レーザ光源−は支持体ζ二平行に固定され
第1反射プリズム−は、支持子i8])を介して上記支
持体@)に固定されている。また上記レーザ光源−の一
部f二はレーザビームを射出する射出部−が設けてあり
、この射出部−内にはレーザビームを光学的5二集光す
る凸レンズ−A及び偏光板−Bが付設されている。更C
第1反射プリズム例は直角三角形の直角面を上記射出部
−に対向せしめその斜面(二よって上記レーザビームを
反射変換するようになっている。なおl[i81はレー
ザ光源の傾斜調整金具で調整ねじe@C二よって上記支
持体(至)の傾斜が自由に変えられるよう1″−表って
いる。185)は上記支持体例の一部I:固定された固
定子で上記基板−の一部に回動自在C−枢着され支点−
を中心1:支持体鄭)は傾斜角度が調整出来る。
A prism support frame fixed to a part of the substrate (company) holds an entrance prism (7) and an exit prism (2) with a light shielding plate at the center thereof. Each of the above-mentioned frisms has a right-angled triangular shape, and is configured so that the beam passes through the slope and the right-angled short side serves as the measurement surface that comes into contact with the object to be measured. Projection p" structure cn is support □□□
) and laser light source-1 and adjustable second reflective prism ■)
The laser light source is fixed parallel to the support ζ, and the first reflecting prism is fixed to the support @) via the support i8]). Further, part f2 of the laser light source is provided with an emission part for emitting a laser beam, and inside this emission part there is a convex lens A for optically focusing the laser beam and a polarizing plate B. It is attached. Further C
The first reflective prism example has a right-angled triangular right-angled surface facing the above-mentioned emission part, and its slope (2) so as to reflect and convert the above-mentioned laser beam. The screw e@C2 allows the inclination of the support (to) to be changed freely by 1''. Rotatable C - pivoted to the fulcrum -
Center 1: The inclination angle of the support body can be adjusted.

mlは第2反射プリズム−を固定したプリズム固定体で
基板−の一部f二回動自在g二枢着されその一部I:F
i、棒体から成る可動伝達素子−)が固定されこの素子
は長い棒でその自由端は基1帽二沿って配設されると共
に変心されて回動する変心カム閣の外表面I:液接触て
上下C二変化するようi二なっている。々お変心カム閣
は基板−の一部5二回動自在C二固定されている。なお
上記可動伝達素子−は変心カム閣を回転することによっ
て矢印方向に移動(上下動)シ、第1反射プリズム■を
微調整することが出来るよう$二なっている。−)は顕
微鏡であってその先端は上記基板−の一部C回動自在C
枢着されると共C二この開口部は上記射出プリズムm)
の斜面(二正対するようになっている。この顕微鏡閣内
には対物レンズ−・偏光板−と四分の一波長板鯛及び接
眼レンズ鵠が組込まれている。この場合四分の一波長板
一)と検光板−)〔下記で説明〕とは、偏光板1321
Bと共に光弾性学でのセナルモン補整器を形成するよう
に光学的軸を一致して配置し組み込まれている。なお必
要があれば上記対物レンズ圏により実像の生ずる位置に
尺度−を介在してもよい。また接眼レンズ−に対向して
角度目盛板−が付設されると共に検光板WI)が回転自
在に固定され、史に顕歇鏡間の傾斜角度を調整する調整
機構部;を付設して表面応力測定装置間i′−構成して
成る。
ml is a prism fixing body that fixes the second reflecting prism, and a part of the substrate (f) is rotatable (g), and a part of it is pivoted (I: F).
A movable transmission element (i) consisting of a rod is fixed, and this element is a long rod whose free end is arranged along the base 1 and the outer surface of the eccentric cam which rotates eccentrically. It is shaped like i2 so that it changes up and down C2 upon contact. Each of the eccentric cams is fixed to a part of the board, which is rotatable. The movable transmission element is moved (up and down) in the direction of the arrow by rotating the eccentric cam, so that the first reflecting prism can be finely adjusted. -) is a microscope whose tip is a part of the above-mentioned substrate -C which can be rotated freely.
When pivotally mounted, the opening of the above injection prism (m)
The slopes of the microscope (two facing each other) are built into this microscope cabinet, as well as an objective lens, a polarizing plate, a quarter-wave plate, and an eyepiece.In this case, a quarter-wave plate is installed. 1) and analyzer plate -) [explained below] are polarizing plate 1321
The optical axes are arranged to coincide with each other so as to form a Senarmont compensator in photoelasticity. If necessary, a scale may be interposed at the position where the real image is generated by the objective lens zone. In addition, an angle scale plate is attached opposite the eyepiece, and an analyzer plate (WI) is rotatably fixed, and an adjustment mechanism for adjusting the inclination angle between the microscopes is attached to reduce the surface stress. The measuring device is configured with i'-.

次弧二測定操作について第2図乃至第4図を参照して説
明する。
The second arc measurement operation will be explained with reference to FIGS. 2 to 4.

第3図は接眼レンズ1441により被検面A(第2図番
二手す釉薬層)の実像を観察した状況を示すものであり
、図面i二おける下方の暗部(311)は遮光板−の照
像である。またこの照像の辿縁(312)から射出光に
よって形成される光条(313)は細い帯状を呈する。
Fig. 3 shows a situation in which a real image of the surface to be inspected A (the second glaze layer in Fig. 2) is observed through the eyepiece 1441, and the lower dark area (311) in Fig. It is a statue. Further, a ray (313) formed by the light emitted from the trailing edge (312) of this illumination image has a narrow band shape.

なお光の進行方向は矢印(314)で示され、また尺度
間が付設されている場合には目盛(315)が写し出さ
れる。釉薬層表面A上の実長はこの目盛(315)を用
いて測定することが出来るし、校正することによって随
時決定するのに便利である。
The direction of travel of the light is indicated by an arrow (314), and if a scale interval is attached, a scale (315) is shown. The actual length on the glaze layer surface A can be measured using this scale (315), and it is convenient to determine it at any time by calibrating it.

すなわち、第2図に示すようCニレーザ光源−から放射
されたレーザビーム(8)は集光レンズ1321 A 
I−よって集光されると共に偏光板−Bによって偏光さ
れ反射プリズム(1101に射突して反射され、る。こ
の反射ビームは第2反射プリズム−に進行しここで更(
=反射されて入射プリズム傾C二人射する。そしてこの
入射プリズムリ)を通過したレーザビームは光学的接触
をよくするための液体を通り被測定物Bの釉薬層表面A
に当達し、この釉薬層内を第1図に示すと同様に進行し
てその一部は射出プリズム□内を通過し顕微鏡−)の対
物レンズ馳−四分の一波長板一一接眼しンズNを経て検
光板−)より上記の第3図に示す通り検出することが出
来る。
That is, as shown in FIG.
The light is condensed by I-, polarized by polarizing plate-B, and is reflected by colliding with the reflecting prism (1101).This reflected beam advances to the second reflecting prism (1101), where it is further
= Two people are reflected and enter the incident prism inclination C. The laser beam that has passed through this incident prism passes through a liquid that improves optical contact, and then passes through the glaze layer surface A of the object B.
As shown in Fig. 1, the glaze moves through the glaze layer, and a part of it passes through the exit prism □ and passes through the microscope's objective lens - quarter-wave plate 11 and eyepiece lens. It can be detected as shown in FIG.

釉、薬層Aに応力がない場合には検光板に)を回転する
と光条(313)は、その全体の明るさが一様に変化し
て明るく光ったり、暗くηつたりする。
If there is no stress in the glaze or chemical layer A, when the analyzer plate is rotated, the overall brightness of the striations (313) changes uniformly, and the light becomes brighter or darker.

一方釉薬層A C応力が生じた場合には、検光IIi、
w)を回転すると、第4図に示すように光条(313)
の一部に極小にくびれた部分(316)が観測出来る。
On the other hand, when glaze layer AC stress occurs, analysis IIi,
When rotating w), a ray (313) appears as shown in Figure 4.
A very small constricted part (316) can be observed in a part of the area.

また検光板の回転角は、角度目盛板−C二側まれた目盛
を用いて読み取ることによって算出される。
Further, the rotation angle of the analyzer plate is calculated by reading it using the scale provided on the second side of the angle scale plate-C.

すなわち暗部(311)は上記検光板(転)の回転θ(
SL二より移動する○この暗部(311)の移動を測定
することにより応力の測定を下記のように計算すること
が出来る。
In other words, the dark area (311) is determined by the rotation θ(
○ Moves from SL2 By measuring the movement of this dark part (311), the stress measurement can be calculated as follows.

なお上記説明では、四分の一波長板の前後に偏光板gz
 B Mを用いたが、使用ビーム、例えば、レーザビー
ムの中に偏光成分があるもの直二ついては1個の偏光板
でセナルモンの補整器を構成することも可能である。
In the above explanation, polarizing plates gz are placed before and after the quarter wavelength plate.
Although BM was used, if the beam used, for example, a laser beam, has a polarized component, it is also possible to configure the Senarmont compensator with one polarizing plate.

上記検光板q)の回転θ6=応じ、暗部(311)がA
mだけ移動したとすると、セナルモン法での公知の式菖
二より、移動距離の両端C二おける光路差の差はである
から、これが(、FX(移動距離)(二等しいことがわ
かり、Fを算出することができる。たとえばHe −H
eレーザーの光(波長633nm)を使い、検光板−が
3°回転したとき、暗部が0.5 ffi移動したとし
、釉薬の光弾性常数を2. s (nm/”)/(V−
)とすれば、光路差の差は 3゜ 633nm X −−= 10.6 nm800 従って10.6 nm= 2.5 (nm/m)/(K
f/eIi)XFXo、5” からF = B、5t4/ai = 0.085麺/−
となり、非常C:低い応力をも検出しつることがわかる
Rotation θ6 of the above analyzer plate q) = According, the dark area (311) is A
Assuming that the distance is moved by m, the difference in the optical path difference at both ends of the moving distance C2 is given by the well-known formula in the Senarmont method. For example, He −H
Using e-laser light (wavelength 633 nm), when the analyzer plate is rotated 3 degrees, the dark area moves by 0.5 ffi, and the photoelastic constant of the glaze is 2. s (nm/”)/(V-
), the difference in optical path difference is 3°633nm
f/eIi) XFXo, 5” to F = B, 5t4/ai = 0.085 noodles/-
Therefore, it can be seen that even emergency C: low stress can be detected.

本発明表面応力測定装置−は上記のように構成すること
C=よって次のような作用効果を奏するものである。
The surface stress measuring device of the present invention is constructed as described above, and therefore has the following effects.

レーザ光源を用い、この光源から放射されるレーザビー
ムを被測定物の表面付近をこの表面ご一平行に走るビー
ムを励起し、このビームを射出させると共C二この射出
ビームに生ずる光弾性的光路差を、上記ビームの通路シ
ー設けた偏光板9321Bと四分の一波長板とで成るセ
ナルモンの補整器を構成することにより、検光板にその
像を極めて感度よく写し出すことが出来る。
Using a laser light source, the laser beam emitted from this light source excites a beam that runs parallel to the surface of the object to be measured, and when this beam is emitted, the photoelasticity generated in the emitted beam is By configuring a Senarmont compensator consisting of the polarizing plate 9321B provided with the beam path and a quarter wavelength plate for the optical path difference, the image can be projected onto the analyzer plate with extremely high sensitivity.

このよう(二高感度で写し出された映倫は検光板を回転
すること≦二よって被測定物の表面の応力を容易C−劇
定出来、これを角度目盛板で読みとり、セナルモン法で
計算することによってその応力が算出される。
In this way (2) The image taken with high sensitivity rotates the analyzer plate ≦ 2. Therefore, the stress on the surface of the object to be measured can be easily determined, read it on the angle scale plate, and calculate it using the Senarmont method. The stress is calculated by

以上のようC二被測定物の表面を本発明装置の入射プリ
ズム傾1及び射出プリズム−の底面2二当接するのみで
測定物をWL壊することなくその個々の応力を測定する
ことが出来るから、例えば高感度で表示される映像を映
像センサーと併用すればその測建物例えば高級ガラスの
製造工程(二取り付けて工程の品質管理i二利用するこ
とが可能となり、高品質のガラス生産が出来る。
As described above, by simply bringing the surface of the object to be measured C2 into contact with the inclination prism 1 of the device of the present invention and the bottom surface 2 of the exit prism, it is possible to measure the stress of each individual object without breaking the WL of the object. For example, if a high-sensitivity image is used in conjunction with a video sensor, it can be used to measure the quality of the process, such as in the manufacturing process of high-grade glass, making it possible to produce high-quality glass.

また光源から放出されるレーザビームは、反射プリズム
131Jl l&# l二よって調整することが出来、
これも1i1i1贅も変心カム等の回転により自由C=
シかも微調整が可能である。すなわち長い棒体とした可
動伝達素子1891と変心カム菊との相乗によりこの先
端に付設された反射プリズムa91を極めて微細(二調
整することか出来る。
In addition, the laser beam emitted from the light source can be adjusted by the reflecting prism 131Jl&#l2.
This and 1i1i1 are also free C= by rotation of eccentric cam etc.
It is also possible to make fine adjustments. That is, due to the synergy between the movable transmission element 1891, which is a long rod, and the eccentric cam chrysanthemum, the reflection prism a91 attached to the tip thereof can be adjusted extremely finely.

上記では、入射および射出プリズムと透光板は一体2二
なった実施例を用いたが、これらがたがい直二離れて構
成されていても、効果は同じである。
In the above description, an embodiment in which the entrance and exit prisms and the light-transmitting plate are integrated is used, but even if they are configured to be directly separated from each other, the effect is the same.

レーザー光の入射の光学系にも、また光の入射角度や顕
微鏡の傾角の調整と 固定の機構C二も、上記説明と異なるものを使用できる
。また、顕微鏡の対物レンズ、対眼レンズ、四分の一波
長板、検光板の配列順序も、セナルモンの補整器の働き
を崩さす1:数種の変形を与えうるものである。また、
はうろうや陶磁器製品が曲面を持つことが多いので、上
記の利点はさらC二強まる。
The optical system for laser light incidence and the mechanism C2 for adjusting and fixing the light incidence angle and the tilt angle of the microscope can also be different from those described above. Furthermore, the arrangement order of the objective lens, eye lens, quarter-wave plate, and analyzer plate of a microscope can also cause several types of deformation that disrupt the function of Senarmont's compensator. Also,
Since porcelain and ceramic products often have curved surfaces, the above advantages are further enhanced.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明p面応力測定装置の原理を説明するため
の説明図、第2図は本発明表面応力測定装置を用いて表
面応゛力を測定している状態を示す側面図、第3図及び
第4図は第3図の測定状態を検光板(−て検出し、これ
を拡大して示す夫々の顕微鏡拡大図である。 (2)ト・・基板 (転)1・・・プリズム支持枠 −
・・・遮光板a!5)・・・入射プリズム @J・・・
射出プリズム翰・・・レーザ光源 に))・・・第1反
射プリズムuB、14g1・・・偏光板 −・・・調整
ねじ−・・・@2反射プリズム …・・・可動伝達素子
閤・・・fig整変心カム □□□・・・対物レンズ−
・・・四分の一波長板 ■・・・接眼レンズ−・・・角
度目盛板 −j・・・検光板代理人 弁理士  則 近
 憲 佑 (ほか1名) 第  1 図 第2図 第  3 図
FIG. 1 is an explanatory diagram for explaining the principle of the p-plane stress measuring device of the present invention, FIG. 2 is a side view showing a state in which surface stress is being measured using the surface stress measuring device of the present invention, and FIG. Figures 3 and 4 are enlarged views of the microscopes that detect the measurement state in Figure 3 using an analyzer plate (-). (2) Substrate (Transfer) 1... Prism support frame −
... Light shielding plate a! 5)...Incidence prism @J...
Ejection prism head...laser light source))...first reflecting prism uB, 14g1...polarizing plate -...adjustment screw-...@2 reflecting prism...movable transmission element...・fig Aligning cam □□□・・・Objective lens-
... Quarter wave plate ■ ... Eyepiece - ... Angle scale plate -j ... Analyzer board Agent Patent attorney Noriyuki Chika (and 1 other person) Figure 1 Figure 2 Figure 3 figure

Claims (1)

【特許請求の範囲】[Claims] レーザ光源及びこの光源からのレーザビームを集光する
光学系及び偏光板を有するビーム投射機構と、この投射
機構から放射されるレーザビームの通路≦二付設されて
その射出方向を変換する1個またはOL数個の反射プリ
ズムと、この反射プリズムによって変換された上記レー
ザビームを受けてこのビームな被測定物C二対し一定角
度に入射調整する入射プリズムと、この入射プリズムに
近接して梶付設し上記被測定物からの反射ビームを検出
する射出プリズムと、この射出プリズムC二対向[7こ
の反射ビームを入射する内部6二四分の一波長板を収納
した顕微欽とさらI:前記四分の一波長板よりも光源側
から遠い部分(ユもう一つの偏光板とを具備し、上記複
数個の偏光板と四分の一波長板とを用いてセナルモンの
補整器を構成する表面応力1111定装置。
A beam projection mechanism having a laser light source, an optical system for condensing the laser beam from this light source, and a polarizing plate, and a beam projection mechanism having ≦2 paths for the laser beam emitted from the projection mechanism and converting the emission direction thereof. OL several reflective prisms, an incident prism that receives the above laser beam converted by the reflective prisms and adjusts the beam to be incident on the object to be measured C at a constant angle, and a lever is installed in the vicinity of the incident prism. An exit prism for detecting the reflected beam from the object to be measured; The surface stress 1111 comprises a portion farther from the light source side than the one-wavelength plate (and another polarizing plate), and constitutes a Senarmont compensator using the plurality of polarizing plates and the quarter-wave plate. Fixed device.
JP15374581A 1981-09-30 1981-09-30 Measuring apparatus of surface stress Granted JPS5855830A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15374581A JPS5855830A (en) 1981-09-30 1981-09-30 Measuring apparatus of surface stress

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15374581A JPS5855830A (en) 1981-09-30 1981-09-30 Measuring apparatus of surface stress

Publications (2)

Publication Number Publication Date
JPS5855830A true JPS5855830A (en) 1983-04-02
JPS6244603B2 JPS6244603B2 (en) 1987-09-21

Family

ID=15569180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15374581A Granted JPS5855830A (en) 1981-09-30 1981-09-30 Measuring apparatus of surface stress

Country Status (1)

Country Link
JP (1) JPS5855830A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6179109A (en) * 1984-09-27 1986-04-22 Toshiba Glass Co Ltd Reflection type glass strain inspecting device
KR20010063550A (en) * 1999-12-22 2001-07-09 권문구 Measurement method of mechanical stress in cable insulation

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5682423A (en) * 1979-12-10 1981-07-06 Toshiba Corp Surface stress measuring device of vitreous coating

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5682423A (en) * 1979-12-10 1981-07-06 Toshiba Corp Surface stress measuring device of vitreous coating

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6179109A (en) * 1984-09-27 1986-04-22 Toshiba Glass Co Ltd Reflection type glass strain inspecting device
KR20010063550A (en) * 1999-12-22 2001-07-09 권문구 Measurement method of mechanical stress in cable insulation

Also Published As

Publication number Publication date
JPS6244603B2 (en) 1987-09-21

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