JPS5856442A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS5856442A
JPS5856442A JP56155102A JP15510281A JPS5856442A JP S5856442 A JPS5856442 A JP S5856442A JP 56155102 A JP56155102 A JP 56155102A JP 15510281 A JP15510281 A JP 15510281A JP S5856442 A JPS5856442 A JP S5856442A
Authority
JP
Japan
Prior art keywords
cap
titanium
transmitting window
light transmitting
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56155102A
Other languages
Japanese (ja)
Other versions
JPS6347148B2 (en
Inventor
Fujio Miyauchi
宮内 富士夫
Takashi Takano
隆 高野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP56155102A priority Critical patent/JPS5856442A/en
Publication of JPS5856442A publication Critical patent/JPS5856442A/en
Publication of JPS6347148B2 publication Critical patent/JPS6347148B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/50Encapsulations or containers

Landscapes

  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To provide inexpensively a semiconductor device having a cap with a light transmitting window which satisfies the bonding strength and airtightness by employing iron-nickel-cobalt alloy or an iron-nickel alloy. CONSTITUTION:A titanium ring 33, a light transmitting window member 3 made of sapphire, a silver solder 32 having 72% of silver and 28% of copper and a weight 34 are assembled with a cap 31 formed in a cap shape, are heated at approx. 950 deg.C in vacuum or in inert atmosphere, thereby hermetically sealing the cap and the light transmitting window member. A titanium member which is interposed between the cap and the hermetically sealing part made of the window member is mixed with 15-60% by weight of titanium and the remainder of the silver solder. In this manner, a photosemiconductor element is placed on the cap which is hermetically sealed with the member 3 to weld and fix a substrate bonded via a connecting wire to a semiconductor element and a lead terminal, and the element is hermetically sealed.

Description

【発明の詳細な説明】 本発明は光通悟などの万ブトエレクトロニクス分野に通
用される半導体装置およびその製造方法に係り、符にサ
ファイアなどの石英を主成分とする誘電体からなる光透
過用窓部材を備え、封止部材を用いて気密封止するキャ
ップを有する半導体装置お↓びその製造方法に関する0 従米この樵の半導体装置における光透過用窓付キャップ
の製造方法としては、2つの方法が提案されている。第
1の方法にメタライズ法によるもマンガンなどのように
容易に酸化物を形成する金属粉末の混合qmtサファイ
アなどからなる光透過用窓部材の気密封上部に塗布して
焼成し光透過用窓部材の気密封止部の表面を予め金属化
(メタライズ処理)シ、次に銀ろうなどのろう合金を用
いてキャップと光透過用窓部材のメタライズ処理部分と
t気密封止する方法で6る。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device commonly used in the field of electronics such as Kotsugo, and a method for manufacturing the same. A semiconductor device having a cap that is equipped with a window member and hermetically sealed using a sealing member ↓ and a method for manufacturing the same There are two methods for manufacturing a cap with a window for light transmission in a semiconductor device by this woodcutter. Proposed. The first method is a metallization method, in which a mixture of metal powder such as manganese that easily forms oxides is coated on the hermetically sealed upper part of a light-transmitting window member made of qmt sapphire, etc., and then fired. The surface of the hermetically sealed portion is metallized (metallized) in advance, and then a solder alloy such as silver solder is used to hermetically seal the cap and the metalized portion of the light transmitting window member.

このような方法を用いた光透過用窓付キャップの断面図
全第1図に示す。
A cross-sectional view of a light-transmitting window cap using such a method is shown in FIG. 1.

同図においてx(1チタン、鉄−ニッケルーコバルト合
金(コバール)などからなるキャップ、2は光透過用窓
、3にサファイアなどからなる光透過用窓部材、4はメ
タライズ層、5は銀ろうt示すO しかしながら、このような気密封止方法は光透過用窓部
材に予め前述のメタライズ処理を施丁ことが必要で製造
工程が複雑となりコスト面で高価となる欠点がある。
In the figure, x (1 is a cap made of titanium, iron-nickel-cobalt alloy (Kovar), etc., 2 is a light-transmitting window, 3 is a light-transmitting window member made of sapphire, etc., 4 is a metallized layer, and 5 is a silver solder. However, such an airtight sealing method requires that the light-transmitting window member be subjected to the above-mentioned metallization treatment in advance, which complicates the manufacturing process and increases the cost.

後者の方法はチタン、ジルコニウムなトド銀ろうを組み
合せた封止部材を用いる活性合金化法である。これは真
空中で高温に加熱するとチタン。
The latter method is an active alloying method using a sealing member that combines titanium, zirconium, and silver solder. This becomes titanium when heated to high temperatures in a vacuum.

ジルコニウムなどが銀ろう中に拡散するとともに光透過
用窓部材の酸化物中に拡散し酸素と強く粘付する性JX
t利用して気密封止を行なうものである。この活性合金
化法による気密封止方法としては1元透過用窓部材にサ
ファイア、キャップにチタンを用い、封止部材としてチ
タン線の外周に銀ろうを被覆した10%T1芯BTろう
(チタンの重量比が10%)を用いて真空中で930〜
9フO℃に加熱することにエフ気密封止することが提案
されている。この活性合金化法によれば光透過用窓部材
にメタライズ処理を施さなくてもしくなる反面、キャッ
プにチタンを用いなければならずメタライズ法と同様に
コスト向で高価になるという欠点がある。
Zirconium etc. diffuses into the silver solder and also diffuses into the oxide of the light-transmitting window material, causing it to strongly adhere to oxygen.
t to perform airtight sealing. The hermetic sealing method using this active alloying method uses sapphire for the single-transmission window member, titanium for the cap, and a 10% T single-core BT solder (titanium) in which the outer periphery of the titanium wire is coated with silver solder as the sealing member. 930 ~ in vacuum using a weight ratio of 10%)
It has been proposed to heat the product to 90°C and hermetically seal it. Although this active alloying method eliminates the need for metallizing the light-transmitting window member, it has the disadvantage that it requires the use of titanium for the cap, making it expensive in terms of cost, similar to the metallizing method.

wIz図にこの場合の光透過用窓付キャップの要部断面
図を示し、21はチタンからなるキャップ、22はチタ
ン線、23は銀ろうでめり、気密封止の際の加熱により
10%T1芯BT ろうの銀ろうが溶融し、チタン線2
2と銀ろう23とになったものでおる。なお部位2.3
に前記第1図の部位2.3と同一部位を示す。
Figure wIz shows a cross-sectional view of the essential parts of the cap with a window for light transmission in this case, where 21 is a cap made of titanium, 22 is a titanium wire, 23 is soldered with silver solder, and the temperature is reduced by 10% by heating during hermetic sealing. T1 core BT The silver solder melts and the titanium wire 2
2 and silver solder 23. In addition, part 2.3
shows the same part as part 2.3 in FIG. 1 above.

本発明は後者の活性合金化法によりキャップに制御面な
チタン【用いずに鉄−ニッケルーコバルト合金または鉄
−ニッケル合金を用−て接着強度および気密特性を満足
する光透過用窓付キャップ七肩する牛導体装置#tk安
価に提供しようとするものである。
The present invention utilizes the latter active alloying method to create a cap with a window for light transmission that satisfies adhesive strength and airtightness by using iron-nickel-cobalt alloy or iron-nickel alloy instead of using titanium as a control surface. This is an attempt to provide a shoulder conductor device #tk at a low cost.

なお1本発明田願人は特願昭54−170049号tも
って鉄−ニッケルーコバルト合金またに鉄−ニッケル台
金から構成されるキャップにサファイアからなる光透過
窓部材tガラス【用いて気密封止する構成を提案してい
る0本発明はかかる先願発明において提案される気密封
止構造よりも更に高温域での使用が可能な気密封止構造
【提供しょうとするものであるO 本発明によれば鉄−ニッケルーコバルト合金または鉄−
ニッケル台金からなり光透過用窓を有するキャップと石
英を主成分とする誘電体からなる光透過用窓部材’i:
Jj止部材を介して気密封止してなる光透過用窓付キャ
ップtvする半導体装置において、前記キャップと前記
光透過用窓部材にチタン部材および銀ろつを封止部材と
して気密封止されてなること7%値とする半導体装置が
提供される。
In addition, the inventor of the present invention obtained the patent application No. 170049/1983 by using an iron-nickel-cobalt alloy or a cap made of an iron-nickel base metal and a light-transmitting window member made of sapphire glass. The present invention proposes an airtight sealing structure that can be used in a higher temperature range than the airtight sealing structure proposed in the prior invention. According to iron-nickel-cobalt alloy or iron-
A light-transmitting window member made of a cap made of a nickel base metal and having a light-transmitting window and a dielectric material mainly composed of quartz:
In a semiconductor device including a cap with a light transmission window which is hermetically sealed via a JJ stopper member, the cap and the light transmission window member are hermetically sealed using a titanium member and a silver solder as a sealing member. A semiconductor device having a value of 7% is provided.

また、鉄−ニッケルーコバルト合金または鉄−ニッケル
合金からなり光透過用窓を有するキャップと石英を主成
分とする誘電体からなる光透過用窓部材を封止部材を介
して気密封止してなる光透過用窓付キャップを有する半
導体装置の製造方法において、前記キャップと前記光透
過用窓部材のすることt−特徴とする半導体装置の*遣
方法が提供される。
In addition, a cap made of iron-nickel-cobalt alloy or iron-nickel alloy and having a light-transmitting window and a light-transmitting window member made of a dielectric material mainly composed of quartz are hermetically sealed via a sealing member. In this method of manufacturing a semiconductor device having a cap with a light transmission window, there is provided a method for using a semiconductor device characterized by what the cap and the light transmission window member do.

本発明は活性4!r金化法の特質を利用し鉄−ニッケル
ーコバルト合金または鉄−ニッケル合金からなるキャッ
プとサファイアなどからなる光透過用窓部材との気密封
止部に憾ろうおよびチタンリング、チタンMなどからな
るチタン部材金介在させて加熱することに工9チタンが
銀ろうの中へ拡散する合金液化現象を利用するとともに
銀ろう中のチタンが光透過用窓部材の酸化物中に拡散し
、酸素と強く結合することを利用して強固に気密封止す
るようにしたものである。
The present invention is active 4! Utilizing the characteristics of the gold plating method, wax, titanium rings, titanium M, etc. are used to seal the airtight seal between the cap made of iron-nickel-cobalt alloy or iron-nickel alloy and the light-transmitting window member made of sapphire, etc. By heating the titanium material with metal interposed, the process takes advantage of the alloy liquefaction phenomenon in which titanium diffuses into the silver solder, and the titanium in the silver solder diffuses into the oxide of the light-transmitting window material, causing oxygen and The strong bond is used to create a strong airtight seal.

以下本発明の実施例にっ−て図面t#照しi#細に説明
する。
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

第3図は本発明にかかる光透過用窓付ギャップの気密封
止する前の組立状atm示す断面図である。
FIG. 3 is a sectional view showing an assembled ATM before hermetically sealing the gap with a window for light transmission according to the present invention.

同図において31は鉄−ニッケルーコバルト合金ま九は
鉄−ニッケル合金からなるキャップ。
In the figure, 31 is an iron-nickel-cobalt alloy, and 9 is a cap made of an iron-nickel alloy.

32に釧ろう、33はチタンリング、34はカーボン、
ステンVスなどからなる重9でおる。なお部位2.3r
C前記第1図の部位礼 3と同一部位金示す。なお、銀
ろう3′2に板状であってもよく、ま次中ヤッグ31と
光透過用窓部材3との間にチタンリング33といっしょ
に挾み込んでもよioまたチタンリング33は線状でも
より。なお薄板状のチタンリングはチタン板金プレス加
工などにより打抜くほか、チタンパイプを薄く切断して
も調達することができる。
32 is Chisuro, 33 is titanium ring, 34 is carbon,
It is made of heavy duty 9 made of stainless steel. In addition, part 2.3r
C Shows the same part as Part 3 in Figure 1 above. It should be noted that the silver solder 3'2 may have a plate shape, or it may be inserted together with the titanium ring 33 between the middle wax 31 and the light transmitting window member 3.Also, the titanium ring 33 may be a wire. Even the state is better. In addition to punching thin titanium rings using titanium sheet metal press processing, they can also be procured by cutting titanium pipes into thin pieces.

周知の方法によりキャップ形状に成形したキャップ31
にチタンリング33お工びサファイアからなる光透過用
窓部材3、銀72チ、鋼28チの組成からなる銀ろう3
21重v34(i−図のように組立て真空中またに不活
性雰囲気中で約9501:に加熱することによりキャッ
プと光透過用窓部材を気密封止することができる。気密
封止後の要部断面図を第4図に示す。
Cap 31 formed into a cap shape by a well-known method
A titanium ring 33 was made, a light transmitting window member 3 made of sapphire, and a silver solder 3 made of a composition of 72% silver and 28% steel.
The cap and the light-transmitting window member can be hermetically sealed by assembling the 21-fold v34 (I-as shown in the figure) and heating it in a vacuum or in an inert atmosphere to approximately 9501. A partial sectional view is shown in FIG.

なお・キャップと光透過用窓部材の気密封上部に介在さ
せるチタン部材は銀ろ5との重量比でチタンが15〜6
0%とするのがよい。
In addition, the titanium member interposed in the airtight upper part of the cap and the light transmission window member has a weight ratio of titanium of 15 to 6 with respect to the silver filter 5.
It is better to set it to 0%.

この実験の給米を下表に示す0これはチタン部材の重量
比?変えてその影v葡気密特性との関係かかる実験によ
るとチタンの重量比が小さいと銀ろう中にチタンが十分
に拡散されず10%以下では気密封止することができな
かった。15%未満では気密封止はある程度まで可能で
あるが、気密特性および接着強度が十分でないため実用
上好ましくな一〇さらにチタンの重量比が大きくなり6
0%勿越えるようになると銀ろうの量が少なくなり気密
時性が悪化するとともに気密封止部における銀ろうの行
きわ交vが不安定となるので接着強度が低下し実用上好
ましくない。なお気密時性の判定F′i、l x 10
−” atm−cc/sea、以下の検出感度′IK−
有するヘリウムリークディテクターを用いて行なり九〇 このようにして光透過用窓部材を気密封止したキャップ
に、光半導体素子を載置して該半導体素子とリード端子
とを接続線によりボンディングし任 た基板を溶接固着し、該半導体素子を気密封入すること
により本発明の半導体装置が完成される。
The rice supply for this experiment is shown in the table below.0 Is this the weight ratio of the titanium parts? According to the experiment, when the weight ratio of titanium is small, the titanium is not sufficiently diffused into the silver solder, and when it is less than 10%, an airtight seal cannot be achieved. If it is less than 15%, hermetic sealing is possible to some extent, but the airtightness and adhesive strength are insufficient, so it is not preferred for practical purposes10 Furthermore, the weight ratio of titanium increases6
If it exceeds 0%, the amount of silver solder decreases and the airtightness deteriorates, and the cross-over of the silver solder in the hermetic sealing part becomes unstable, resulting in a decrease in adhesive strength, which is not preferred in practice. In addition, the determination of airtightness F'i, l x 10
-" atm-cc/sea, detection sensitivity of 'IK-
90 Place the optical semiconductor element on the cap with the light-transmitting window member hermetically sealed, and bond the semiconductor element and the lead terminals using connecting wires. The semiconductor device of the present invention is completed by welding and fixing the substrate and hermetically sealing the semiconductor element.

この状態の半導体装置の夾施例會第5図に示す〇同図に
おいて、51に鉄−ニッケルーコバルト合金、鉄−ニッ
ケル合金などからなるアイレット、52に該アイレット
5上上に固層されt光半導体素子、53に該半導体素子
52から導出された接続[54が接続され九リード端子
、55は該リード端子53iアイレツト51に固着する
ガラスである。なお部位2,3.31〜33rr、前記
第4図に示すそれぞれの部位と同一部位を示す。
An example of the semiconductor device in this state is shown in FIG. A connection [54 led out from the semiconductor element 52 is connected to the semiconductor element 53, and a nine-lead terminal 55 is a glass fixed to the eyelet 51 of the lead terminal 53i. Note that portions 2 and 3.31 to 33rr are the same portions as the respective portions shown in FIG. 4 above.

第6図に本兄例の他の実施例を示すもので、第4図の場
せと異なるのに封止部材としてのチタンと銀ろうt一体
化したものt用いることである。
FIG. 6 shows another embodiment of the present invention, which differs from the one shown in FIG. 4 in that it uses an integral combination of titanium and silver solder as a sealing member.

すなわち第7図<Q)に示すよりなチタン+l!t−芯
として外側に同心状に銀ろうtクラッド法などにより被
覆した封止部材を用いて気密封止した場合のJfR部′
tfr面図である。この封止部材はチタン線に鯖ろうt
被覆した線材tコイル状に密着巻きし切断することによ
り容易に製造することができる。本夾施例によれば、銀
ろうまたにチタン部材の組立工程が一工程省略できるの
で量産性に優れる効果がある。
That is, more titanium+l as shown in FIG. 7<Q)! JfR part' when hermetically sealed using a sealing member coated concentrically with silver solder on the outside as a T-core using the T-clad method, etc.
It is a tfr surface view. This sealing member is made of mackerel t on titanium wire.
It can be easily manufactured by tightly winding a coated wire into a t-coil shape and cutting it. According to this embodiment, one step of assembling the silver solder and the titanium member can be omitted, resulting in excellent mass productivity.

また同心状に限らず、第1図(切に示すようにチタンに
銀ろうtクラッド法などにより積層状に被着させたチタ
ン板金プレスによる打抜加工などにより成形して封止部
材としてもよい。この場合、前記同心状と同様の効果の
はか更に気密封止部の銀ろうの行きわた9が極めて良好
となる効果がある。
In addition, the sealing member is not limited to a concentric shape, and may be formed by punching with a titanium sheet metal press made by applying a laminated layer of titanium using a silver solder t-clad method or the like as shown in Figure 1. In this case, in addition to the same effect as the above-mentioned concentric arrangement, there is an effect that the distribution of the silver solder 9 in the hermetic sealing portion is extremely good.

なお、封止部材は前述の縁状および板状のほか球状の銀
ろうおよびチタンを光透過用窓部材の周辺に配置して加
熱し気密封止することも可能で6る0 また、−ずれの場合にもチタ/と銀ろうの重量比はチタ
ンt″15〜60%とすることがat t、zことは前
述のとおりで6る◇ 本発明によればキャップに鉄−ニッケルーコバルト合金
またに鉄−ニッケル合金を使用しサファイアなどの石英
を主成分とする光透過用窓部材にメタライズ処理を施さ
ずにキャップと光透過用窓部材を気密封止することがで
きるため、製造工程が簡略となり、作業効率、歩留りが
向上するとともに量産性に優れ、接着強度および気密特
性を満足する光透過用窓付キャップを有する半導体装置
を提供することができる。
In addition to the above-mentioned edge-shaped and plate-shaped sealing members, it is also possible to place spherical silver solder or titanium around the light-transmitting window member and heat it for airtight sealing. In this case, the weight ratio of titanium/silver solder should be 15 to 60% titanium (at t, z) as described above. According to the present invention, the cap is made of an iron-nickel-cobalt alloy. In addition, since the iron-nickel alloy is used to airtightly seal the cap and light transmitting window member without metalizing the light transmitting window member whose main component is quartz such as sapphire, the manufacturing process can be simplified. It is possible to provide a semiconductor device having a light-transmitting window cap that is simple, improves work efficiency and yield, is excellent in mass production, and satisfies adhesive strength and airtightness.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図rc従来のメタライズ処理を施した光透過用窓付
キャップの断面図、第2図は従来の10チが・ Ti$BT ろうt用いた場合の要部断面図、第3図に
本発明の実施例の組立状態を示す断面図、第4図にその
気萱封止後の要部断面図、第5図に本発明による半導体
装置の実施例を示す断面図、第向図である。 図におりて。 1.21.31  ・・・・・・・・・キャップ2・・
・・・・・・・・・・光透過用窓3・・・・・・・・・
・・・光透過用窓゛部材番・・・・・・・・・・・・メ
タライズ層5.23,32.)2 ・・・・・・・・・
銀ろう22、〒1・・・・・・・・・チタン線33、フ
3・・・・・・・・・チク/リング34・・・・・・・
・・重り 51・・・・・・・・・アイレット 52・・・・・・・・・元手導体素子 53・・・・・・・・・リード端子 64・・・・・・・・・優続線 第6図 ?? 算7図 (+!12)        (b)
Figure 1 is a cross-sectional view of a cap with a light-transmitting window that has been subjected to conventional metallization treatment. Figure 2 is a cross-sectional view of the main part when a conventional 10-inch solder is used. FIG. 4 is a sectional view showing an assembled state of an embodiment of the invention, FIG. 4 is a sectional view of the main part after air sealing, and FIG. . In the diagram. 1.21.31 ...... Cap 2...
・・・・・・・・・Light transmission window 3・・・・・・・・・
...Light transmission window part number...Metalized layer 5.23, 32. )2 ・・・・・・・・・
Silver solder 22, 〒1・・・・・・Titanium wire 33, F3・・・・・・Chiku/Ring 34・・・・・・・・・
...Weight 51 .....Eyelet 52 ..... Base conductor element 53 ..... Lead terminal 64 ..... Dominant line diagram 6? ? Math 7 figure (+!12) (b)

Claims (1)

【特許請求の範囲】 (η 鉄−ニッケルーコバルト合金ま九に鉄−ニッケル
合金からなり光透過用窓を有するキャップと石英勿土成
分とするg電体からなる光透過用窓部材を樹上部材r介
して気密封止してなる光透過用窓付キャップ?有する半
導体装置において、前記キャップと前記光透過用窓部材
にチタン部材および釧ろうt−封止部材として気密封止
されてなることt特徴とする半導体装置。 (2)前記テクノ部材と銀ろうとの重重比はチタン部材
が15〜60%である特許請求の範囲第1項記載の半導
体装置。 (3)  ?−ニッケルーコバルト合金を九rzm−ニ
ッケル会金からなり光透過用窓t−有するキャップと石
英を主成分とする誘電体からなる光透過用窓部材y:i
r:封止部材r介して気密封止してなる光透過用窓付ギ
ャップを有する半導体装置の製造方法にお9て、前記キ
ャップと前記光透過用窓部材の気密封止部近傍°にチタ
ン部材2工び鉄ろうr配置して、前記銀ろう(!−71
11熱浴融させることにより気密封止することに%徴と
する半導体装置の製造方法。 (4)前記チタン部材に銀ろう層を一体に形成した封止
部材を用いて気密封止する特許請求の範囲第3項記載の
半導体g&直の製造方法。
[Scope of Claims] (η Iron-nickel-cobalt alloy) A light-transmitting window member consisting of a cap having a light-transmitting window made of an iron-nickel alloy and a g-electronic material having a quartz-free earth component. A semiconductor device having a cap with a light transmitting window that is hermetically sealed via a member R, wherein the cap and the light transmitting window member are hermetically sealed as a titanium member and a sapphire T-sealing member. (2) The semiconductor device according to claim 1, wherein the titanium member has a weight ratio of 15 to 60% between the techno member and the silver solder. (3) ?-Nickel-cobalt alloy 9 rzm - A light transmitting window t made of nickel metal; a cap having a light transmitting window t; a light transmitting window member y made of a dielectric material mainly composed of quartz;
r: In the manufacturing method of a semiconductor device having a gap with a light transmitting window that is hermetically sealed through a sealing member r, titanium is added to the vicinity of the hermetically sealed portion of the cap and the light transmitting window member. Arrange the two parts with the iron solder r, and add the silver solder (!-71
11. A method for manufacturing a semiconductor device, which is characterized by hermetic sealing by melting in a hot bath. (4) The method for manufacturing a semiconductor g&direct according to claim 3, wherein the titanium member is hermetically sealed using a sealing member in which a silver solder layer is integrally formed.
JP56155102A 1981-09-30 1981-09-30 Semiconductor device and manufacture thereof Granted JPS5856442A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56155102A JPS5856442A (en) 1981-09-30 1981-09-30 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56155102A JPS5856442A (en) 1981-09-30 1981-09-30 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS5856442A true JPS5856442A (en) 1983-04-04
JPS6347148B2 JPS6347148B2 (en) 1988-09-20

Family

ID=15598659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56155102A Granted JPS5856442A (en) 1981-09-30 1981-09-30 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5856442A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4766095A (en) * 1985-01-04 1988-08-23 Oki Electric Industry Co., Ltd. Method of manufacturing eprom device
JPH01229917A (en) * 1988-03-10 1989-09-13 Nippon Soken Inc Ignition time sensor
JP2008277395A (en) * 2007-04-26 2008-11-13 Kyocera Corp Optical element window member, optical element storage package, and optical module

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4766095A (en) * 1985-01-04 1988-08-23 Oki Electric Industry Co., Ltd. Method of manufacturing eprom device
JPH01229917A (en) * 1988-03-10 1989-09-13 Nippon Soken Inc Ignition time sensor
JP2008277395A (en) * 2007-04-26 2008-11-13 Kyocera Corp Optical element window member, optical element storage package, and optical module

Also Published As

Publication number Publication date
JPS6347148B2 (en) 1988-09-20

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