JPS5868935A - 半導体結晶上への絶縁膜の形成法 - Google Patents

半導体結晶上への絶縁膜の形成法

Info

Publication number
JPS5868935A
JPS5868935A JP56167388A JP16738881A JPS5868935A JP S5868935 A JPS5868935 A JP S5868935A JP 56167388 A JP56167388 A JP 56167388A JP 16738881 A JP16738881 A JP 16738881A JP S5868935 A JPS5868935 A JP S5868935A
Authority
JP
Japan
Prior art keywords
gas
semiconductor crystal
crystal
insulating film
reaction tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56167388A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6362095B2 (2
Inventor
Masamichi Okamura
岡村　正通
Eiichi Yamaguchi
栄一 山口
Yoshitaka Furukawa
古川　吉孝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56167388A priority Critical patent/JPS5868935A/ja
Publication of JPS5868935A publication Critical patent/JPS5868935A/ja
Publication of JPS6362095B2 publication Critical patent/JPS6362095B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Formation Of Insulating Films (AREA)
JP56167388A 1981-10-20 1981-10-20 半導体結晶上への絶縁膜の形成法 Granted JPS5868935A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56167388A JPS5868935A (ja) 1981-10-20 1981-10-20 半導体結晶上への絶縁膜の形成法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56167388A JPS5868935A (ja) 1981-10-20 1981-10-20 半導体結晶上への絶縁膜の形成法

Publications (2)

Publication Number Publication Date
JPS5868935A true JPS5868935A (ja) 1983-04-25
JPS6362095B2 JPS6362095B2 (2) 1988-12-01

Family

ID=15848774

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56167388A Granted JPS5868935A (ja) 1981-10-20 1981-10-20 半導体結晶上への絶縁膜の形成法

Country Status (1)

Country Link
JP (1) JPS5868935A (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006321564A (ja) * 2006-06-21 2006-11-30 Denki Kagaku Kogyo Kk 熱可塑性樹脂シート

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0535094U (ja) * 1991-10-14 1993-05-14 敦子 加川 カバー付き物干し器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006321564A (ja) * 2006-06-21 2006-11-30 Denki Kagaku Kogyo Kk 熱可塑性樹脂シート

Also Published As

Publication number Publication date
JPS6362095B2 (2) 1988-12-01

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