JPS5868942A - Die bonding device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed Description of the Invention] The uninvention is a die-bonding device that can bond and fix semiconductor chips to a circuit board without damaging them when die-bonding semiconductor chips to a circuit board. The purpose is to provide '1'''.

As is well known, the silicon wafer that has undergone the diffusion and photoetching processes is divided into functional units and fixed into n and a half pieces using a so-called die bonding apparatus. Conventionally, the semiconductor chip was vacuum-suctioned to the die-let, mechanical load was applied to the die-let, and (2) the semiconductor chip was crimped to the road board and fixed by V-bonding using Mu-Si alloy or adhesive resin. .

However, there is a problem with this method and there is no pressure on the die collet itself when two semiconductor chips are vacuum-suctioned into the die collet 1 shown in FIG. In addition, a semiconductor chip 2'l is mounted on the circuit board 3.
I crimped it and added pressure! One die collet must be moved to turn the gourd in the front-back direction or left-right direction.

At this time, as shown in FIG. 2B, a crack 6 occurs at the edge 4 of the semiconductor chip 2 during die bonding. This crack 6 is caused by the die collet 1 coming into contact with the edge 4 of the semiconductor chip 2 [L] As shown in FIG. This occurs because an unreasonable sword is added to Edge 4.

The present invention eliminates the drawbacks of the conventional method, and when die-bonding semiconductor chips to a circuit board, pressurized gas is introduced into the hollow part of the die collect, and the semiconductor chips are pressed against the circuit board by this pressure. , a die bonding device is provided which can perform die bonding without the die collet coming into contact with the edge of the semiconductor chip.

FIG. 2 shows the structure of a die bonding device in an embodiment of the present invention. FIG. As shown in FIG. 2, the device includes a die collet 1, a vacuum system 16 for sucking up semiconductor chips and moving them to the die-bonding location on the circuit board, and a vacuum system 16 for applying pressure to the semiconductor chips and applying pressure to the circuit board during die-bonding. Pressurized gas supply system 17 for joining and fixing
and? It is equipped with valves 14, 15 and 13 pressure gauges. The suction and removal of the semiconductor chip to the die collet 1 is done by the opening/closing side of the vacuum valve 1.4. Pressurization of the semiconductor chip onto the circuit board during die botting is performed using the Calorie pressure gas valve. 16 control. 12 is a heater that is used to prevent cooling of the circuit board when the pressurized gas is in a cold state during die bonding.

Next, referring to FIG. 3, the operation of the die bonding apparatus in the above embodiment will be explained.

First, in FIG. 3(m), 14 vacuum stopcocks are opened to apply vacuum to the 2-piece semiconductor chip collector 1, which has been divided in advance, and in this state, the 2 semiconductor chips are placed on the circuit board 3. Next, in FIG. 3(B), one die collet is lowered to bring the lower surface of the semiconductor chip 2 into contact with the circuit board 3, and the vacuum stopper 14 is closed.

Next, in FIG. 3(C), one die collet is vertically moved upward by about 1/2 of the thickness of the semiconductor chip 2.

After the upward movement of the die collet 1 is completed, the pressurized gas opening/closing valve 157 is opened to introduce pressurized air into the hollow part 7 of the die collet, and the die collet 12 front and rear turns a
, move 2 semiconductor chips left and right, 3 circuit boards, 3
(in the figure), the semiconductor chip 2 is bonded with adhesive resin or
The 8i alloy 6 is bonded and fixed to the circuit board 3. Steps R and B are completed, and two semiconductor chips are left on the circuit board 3.
After pulling up to die collet 1, close the pressurized gas valve r and use Guibond? Completed.

Next, fix the T to the semiconductor circuit board based on Figure 4r.
The positional relationship between the die collet and the semiconductor chip during this process will be described in more detail.

In Figure 1, there is at least an interval between the die collet 1 and the edge 4 of the semiconductor chip 2 such that the die collet 1 and the edge 4 do not come into contact with each other, for example, an interval of about half the thickness of the semiconductor chip 2. Provide D2.

In this connection, a gap Dy is provided between the semiconductor chip 2 and the die collet 1, and pressurized gas is introduced into the die collet 1r.
It is connected and fixed to the circuit board 3 by working + conductor chins 12r on the front and rear, left and right sides. With this method, the semiconductor chip 2 can be bonded and fixed to the die collet 1 without the edges of the semiconductor chip completely touching. Pressurized gas is introduced into the hollow part of the die collet 1, and the two semiconductor chips are crimped onto the circuit board 3. When the bond is pressed, the die collet 1 and the semiconductor chips are brought into contact only at their respective wall surfaces 5. First, the edges of the semiconductor chip are in a non-contact state.

Therefore, damage to the edges of the semiconductor pellet? It can be prevented.

As described above, according to the die bonding apparatus of the above embodiment, cracks in the semiconductor chip can be prevented since the edge of the semiconductor chip does not come into strong contact with the die collet.
゛Next, a die bonding apparatus in another embodiment of the present invention will be explained.

It is already known that semiconductor chisels can be firmly bonded to a preheated circuit board by die bonding using the mu-Si eutectic alloy method. However, if the pressurized gas is cold during die bonding, the circuit board will be cooled and the die bonding conditions will become unstable. The pressurized gas "f'" passing therethrough is directly heated.

FIG. 6 shows still another embodiment of the die bonding device of the present invention, in which a ceramic tube is equipped with a heating element 12r, and 18 heat dissipating blades are installed inside the tube to heat a gas. It is said that

As another example, in the above-described process, a heating element is not installed inside the tube above the die collet 1, but the pressurized gas is heated to a high temperature in the middle of the tube that introduces the pressurized gas into the die collet. means? Alternatively, the high temperature gas may be introduced into the die collet 1.

If the die bonding equipment in such a non-explosion type embodiment is constructed, in the Mu-3i eutectic alloy method, heated pressurized gas can be introduced through the hollow space of the die, and the circuit board can be bonded during the bonding process. The temperature of the circuit board decreases, and the bonding conditions do not change and bonding failures do not occur.The heat escaping from the circuit board due to the semiconductor chip and die collet is supplied with heated pressurized gas. In addition, in the resin bonding method, by introducing heated pressurized gas, it can be carried out during die bonding when the resin is cured after bonding.Therefore, the process can be shortened. The pressurized gas may be an inert gas such as N2.By using an inert gas, it is possible to prevent oxidation of the semiconductor chip surface 1 and remove dust and the like.

Similar to the conventional die bonding using a die collet, it is also possible to apply a mechanical load to the semiconductor chip using the die collet and press and bond it to the circuit board.

As is clear from the above description of the embodiments, in the past, the die collet was in contact with the surface of the semiconductor chip, and if it was even slightly inclined, it would cause damage to one surface of the semiconductor chip.

Pressure is concentrated only at the edges, and the surface of the semiconductor chip.

In contrast to the die bonding device which causes severe damage to semiconductor chips, the die bonding apparatus of the present invention includes means for pressurizing the semiconductor chip by the gas pressure of pressurized gas. If such a configuration is used, the surface of the semiconductor chip will be uniformly impregnated with gas pressure, and the semiconductor chip will be bonded to the circuit board. This is extremely effective in improving the yield of semiconductor devices since the semiconductor chips are not damaged due to strong contact.

[Brief explanation of the drawing]

FIG. 1(B) is a diagram showing a state in which a single semiconductor chip is bonded using a conventional die bonding device, FIG. The figure shows the configuration of a die bonding device in an embodiment of the invention, and FIGS. 6 is an enlarged view of the main parts of a die bonding apparatus in another embodiment of the present invention, and FIG. 6 is a diagram for explaining the main parts of the same process in further detail. It is an enlarged view of the main parts of the die bonding device. 1...Die collet, 2...Semiconductor chip, 3...Circuit board, 12...Heating element, 14.15...Page Empty open/close stopper, 16...
... Vacuum device system, 17... Pressurized gas supply device system. 1 Name of agent Patent attorney Toshio Nakao and 1 other person w4
Figure 1 (B) Figure 2, Figure 4, Figure 5 2

Claims (2)

[Claims] (1) A die collet having an opening for sucking semiconductor chips, a suction means connected to the die collet for sucking the semiconductor chips into the opening of the die collet, and an opening of the die collet connected to the die collet. A die bonding device equipped with a means for supplying pressurized gas to the part. (2) The die bonding apparatus according to claim 1, wherein means for heating the pressurized gas is provided in the die collet.