JPS5874089A - Control system for semiconductor laser output - Google Patents
Control system for semiconductor laser outputInfo
- Publication number
- JPS5874089A JPS5874089A JP17365081A JP17365081A JPS5874089A JP S5874089 A JPS5874089 A JP S5874089A JP 17365081 A JP17365081 A JP 17365081A JP 17365081 A JP17365081 A JP 17365081A JP S5874089 A JPS5874089 A JP S5874089A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- output
- light
- transistor
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明はレーザー記録装置における半導体レーザー出力
制御方式に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor laser output control method in a laser recording apparatus.
才１図は従来のレーザー記録装置における半導体レーザ
ー出力制御・変調方式を示す。この方式では演算増幅器
１の反鼾入出力端子にトランジスタ２のエミッタ電圧が
帰還される。このため演算増幅器、１の正転入力端子に
Ｖｐ なる信号電圧が印加されると、演算増幅器１０
反転入力端子の電位もＶＰ になるまで上昇しトラン
ジスタ２のエミッタ電流工がＩ ＝ Ｖｐ ／ ＶＲｌ
（Ｒ１：抵抗３の値）となるような定電流回路が構
成されている。一方、光検出器４は半導体レーザー５か
らのモニター光を検出する〜。この光検出器４からの信
号はピークホールド回路６により半導体レーザー５の出
力の最大値２例えばブランキング期間や信号部分の最大
値に対応する最大値が検出されて保持さね、誤差増幅器
７において基準電圧と比較されてその誤差が演算増幅器
１の正転入力端子に印加され、半導体レーザー５の電流
が制御される。従って半導体レーザー５の最大出力は上
Ｉピ基準電圧に応じた値に制御される。またトランジス
タ８のベースにｆ調信号か入力されると、トランジスタ
８のコレクタ電流が変調信号に応じて変化する。ここで
トランジスタ２のエミッタ電流をＩ）：２ ＃半導体レ
ーザー５の電流をＩＬＤｌ 、 ）ランジスタ８の
コレクタ電流をＩａＢとすると、ＩＥ２ ＝ＩＬＤ１
＋ＩＯ８という関係式が成り立ち、半導体レーザー５は
変調信号に変調されしかも最大出力が上述の如く常に一
定に制御きねる。Figure 1 shows a semiconductor laser output control/modulation method in a conventional laser recording device. In this system, the emitter voltage of the transistor 2 is fed back to the anti-snoring input/output terminal of the operational amplifier 1. Therefore, when a signal voltage of Vp is applied to the normal input terminal of the operational amplifier 1, the operational amplifier 10
The potential of the inverting input terminal also rises to VP, and the emitter current of transistor 2 becomes I = Vp / VRl.
A constant current circuit is configured such that (R1: value of resistor 3). On the other hand, the photodetector 4 detects monitor light from the semiconductor laser 5. The signal from the photodetector 4 is detected and held by the peak hold circuit 6 at the maximum value 2 of the output of the semiconductor laser 5, for example, corresponding to the blanking period or the maximum value of the signal portion. It is compared with a reference voltage and the error is applied to the normal input terminal of the operational amplifier 1, and the current of the semiconductor laser 5 is controlled. Therefore, the maximum output of the semiconductor laser 5 is controlled to a value corresponding to the upper I pin reference voltage. Furthermore, when an f-tone signal is input to the base of the transistor 8, the collector current of the transistor 8 changes in accordance with the modulation signal. Here, if the emitter current of transistor 2 is I):2, the current of semiconductor laser 5 is ILDl, and the collector current of transistor 8 is IaB, then IE2 = ILD1
The relational expression +IO8 holds true, and the semiconductor laser 5 is modulated by the modulation signal, and the maximum output cannot always be controlled to be constant as described above.
しかしこの方式では定電流回路を用いている為。However, this method uses a constant current circuit.
回路が複雑になり高価となる。The circuit becomes complicated and expensive.
本、発明は上記のような欠点を改善し、回路構成が簡単
で安価な半導体レーザー出力側＠１方式を提供すること
を目的とする。The object of the present invention is to improve the above-mentioned drawbacks and to provide a semiconductor laser output side @1 system which has a simple circuit configuration and is inexpensive.
以下図面を参照しながら本発明について実施例について
説明する。Embodiments of the present invention will be described below with reference to the drawings.
牙２図は本発明の一実施例を示す。半導体レーザー１１
はレーザー記録装置において光源として用いられている
ものである。トランジスタ１２はペースに入力される変
調信号によりコレクタ・エミッタ間のスイッチングを行
うスイッチングトランジスタであり、二値の変調を行う
変調回路を構成する。このトランジスタ１２がオンした
時に半導体レーザー１１に流ねる電流ＩＬＤ２ は直
流電源の重圧ケＶ、半導体レーザー１１の順方向電圧な
ＶＬＤ、）ランジスタ１２のエミッタ・ヲレクタ飽和電
圧１： Ｖａｎｓｌ、１゜
とし、半導体レーザー１１と直列に挿入されるＣｄＳ等
よりなる光−抵抗変換素子１３の抵抗をＲ２とすると。Figure 2 shows one embodiment of the invention. Semiconductor laser 11
is used as a light source in a laser recording device. The transistor 12 is a switching transistor that performs collector-emitter switching in response to a modulation signal input to the pace, and constitutes a modulation circuit that performs binary modulation. The current ILD2 flowing through the semiconductor laser 11 when this transistor 12 is turned on is the heavy voltage V of the DC power supply, the forward voltage VLD of the semiconductor laser 11, the emitter-director saturation voltage 1: Vansl of the transistor 12, and 1 degree. Let R2 be the resistance of the photo-resistance conversion element 13 made of CdS or the like inserted in series with the semiconductor laser 11.
：ＩＬＤ２
２
となる。一方、光検出器１４は半導体レーザー１１から
のモニター光を検出する。ピークホールド回路１５
は光検出器１４からの信号電圧Ｑ）最大値を検出して保
持し、つまりトランジスタ１２かオンして半導体レーザ
ー１１の出力が最大となっている時の入力電圧を検出し
て保持する。このピークホールド回路１５の出力電圧は
誤差増幅器１６において基準電圧と比較され、その差電
圧により駆動回路１７か発光ダイオード１８を駆動して
発光ダイガード１８よ・り光−抵抗変換素子１３へ光か
照射される。発光ダイオード１８の発光量は誤差増幅器
１６の出力電圧に応じて変化し１元−抵抗変換素子１３
の抵抗はその発光量に応じて粟化し発光量が多はわば小
さくなって発光量が少なけわば大きくなる。従って半導
体レーザー１１の臀大出力は基準電圧に対応した値に制
御される。 ・。:ILD2 2 . On the other hand, the photodetector 14 detects monitor light from the semiconductor laser 11. Peak hold circuit 15
The maximum value of the signal voltage Q) from the photodetector 14 is detected and held, that is, the input voltage when the transistor 12 is turned on and the output of the semiconductor laser 11 is at its maximum is detected and held. The output voltage of this peak hold circuit 15 is compared with a reference voltage in an error amplifier 16, and the difference voltage drives a drive circuit 17 or a light emitting diode 18 to irradiate light from the light emitting die guard 18 to the light-resistance conversion element 13. be done. The amount of light emitted from the light emitting diode 18 changes depending on the output voltage of the error amplifier 16, and
The resistance changes depending on the amount of light emitted, and the amount of light emitted becomes small when the amount of light is emitted, and becomes large when the amount of light emitted is small. Therefore, the maximum output of the semiconductor laser 11 is controlled to a value corresponding to the reference voltage.・.
以上のように本発明によりは半導体レーザーと直列に光
−抵抗変換素子を挿入してその抵抗な半導体レーザーの
出力に応じて制御するようにしたので、回路構成が簡単
になり安価となる。As described above, according to the present invention, a photo-resistance conversion element is inserted in series with a semiconductor laser and control is performed according to the output of the resistive semiconductor laser, thereby simplifying the circuit configuration and reducing the cost.
矛１図は従来方式を示す回路図、矛２図は本発明の一実
施例を示す回路図である。
１１・・・半導体レーザー、１３・・・光−抵抗変換素
子。
１４・・・光検出器、１５・・・ピークホールド回路、
】６・・・誤差増幅器、１７・・・、駆動回路、 １８
・・・発光ダイメート。Figure 1 is a circuit diagram showing a conventional system, and Figure 2 is a circuit diagram showing an embodiment of the present invention. 11... Semiconductor laser, 13... Photo-resistance conversion element. 14... Photodetector, 15... Peak hold circuit,
]6...Error amplifier, 17..., drive circuit, 18
...Light-emitting dimate.
Claims (1)
変調信号により変調して変調光ビームを得るレーザー記
録装置において、前記半導体レーザーと直列に挿入され
た光−抵抗変換素子と、この光−抵抗変換素子の抵抗を
前記半導体レーザーの出力、に応じて制御する平膜とを
備えた半導体レーザー出力制御方式。A laser recording device that uses a semiconductor laser as a light source and modulates the semiconductor laser with a modulation signal to obtain a modulated light beam, includes a light-to-resistance conversion element inserted in series with the semiconductor laser, and a resistance of this light-to-resistance conversion element. and a flat film that controls the output of the semiconductor laser according to the output of the semiconductor laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17365081A JPS5874089A (en) | 1981-10-29 | 1981-10-29 | Control system for semiconductor laser output |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17365081A JPS5874089A (en) | 1981-10-29 | 1981-10-29 | Control system for semiconductor laser output |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5874089A true JPS5874089A (en) | 1983-05-04 |
Family
ID=15964539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17365081A Pending JPS5874089A (en) | 1981-10-29 | 1981-10-29 | Control system for semiconductor laser output |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5874089A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61127659U (en) * | 1985-01-30 | 1986-08-11 | ||
| JPS631366U (en) * | 1986-06-19 | 1988-01-07 |
-
1981
- 1981-10-29 JP JP17365081A patent/JPS5874089A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61127659U (en) * | 1985-01-30 | 1986-08-11 | ||
| JPS631366U (en) * | 1986-06-19 | 1988-01-07 |
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