JPS5890738A - Element having multi-layer conductor - Google Patents

Element having multi-layer conductor

Info

Publication number
JPS5890738A
JPS5890738A JP18880781A JP18880781A JPS5890738A JP S5890738 A JPS5890738 A JP S5890738A JP 18880781 A JP18880781 A JP 18880781A JP 18880781 A JP18880781 A JP 18880781A JP S5890738 A JPS5890738 A JP S5890738A
Authority
JP
Japan
Prior art keywords
layer
conductor
carbon layer
substrate
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18880781A
Other languages
Japanese (ja)
Other versions
JPH0261142B2 (en
Inventor
Hisanao Tsuge
久尚 柘植
Sotaro Edokoro
絵所 壮太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP18880781A priority Critical patent/JPS5890738A/en
Publication of JPS5890738A publication Critical patent/JPS5890738A/en
Publication of JPH0261142B2 publication Critical patent/JPH0261142B2/ja
Granted legal-status Critical Current

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Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To easily realize reproducible continuity between conductors by providing a carbon layer at the contact area of conductor layers in a multi-layer conductor structure. CONSTITUTION:A conductive layer 12 is formed on a insulator substrate or substrate or substrate having insulation film and the first conductive layer consisting of a carbon layer 13 is formed also thereon. Thereafter, the second conductive layer 14 is formed by partly or entirely stacking thereon. The sputter evaporation etc. is used for film formation and the suppter etching etc. is used for manufacturing. Paticularly, after the carbon layer is deposited, the dry etching method is employed. The reactive sputter etching is effective for selective elimination of only the carbon layer. This constitution is particularly effective for the Al system conductor because any oxide is not formed due to existence of the carbon layer and continuity between both conductor layers can be attained easily with excellent reproducibility. When the thickness of carbon layer is selected to several tens of Angstrom to several hundreds of Angstrom , a contact resistance can also be neglected.

Description

【発明の詳細な説明】 不発明は多層構造の尋体−at存する半尋体素子ヤ樺気
バブル巣子な口゛多層導体を仔する素子に−するもので
ある。
DETAILED DESCRIPTION OF THE INVENTION The present invention is directed to an element having a multilayer conductor, such as a semicircular element having a multilayer structure or a birch air bubble nest.

果績a d &こおいて素子の槽重が慣4化するのに伴
Ilい、多層の導体配−を形成する挾術が1賛となって
いり。その一つは導体間の′−気的な艷m技侑でりり、
b5−一つは4体間の炭触部における尋JdL挾侑でめ
/:)。00者については多くの有効なプμセスが提案
さnているが、後者についてlよ木だ量産に通した決定
的なプロセスがない。
Achievements As the weight of devices became more common, the technique of forming multilayer conductor arrangements became popular. One of them is the electrical conductivity between the conductors.
b5-One is the charcoal contact part between the four bodies. Although many effective processes have been proposed for the latter, there is no definitive process for mass production of the latter.

従来、導体間の導通ト、F層導体を被覆している紬祿層
にコンタクトホールを設けた後、上層導体を被着する直
前に下層導体狭面をエッチフグ処理することによって図
られている。−dicIc’pL811)配線材料とし
C用いられているアルミニウム導体t−例にとれば、フ
ルミニクム茨面ケζigJfcさ7するアルミナ層【よ
リンwrtどによるケミカル−L−ッチングやアルゴン
イオ/を用いたスバ、タエ、チ/グめりいはイ才ンエ、
チングによって除去される。レカ)しながら、これらの
工、大ング処4法では上層導体を歇着Tる前に試料が再
び大気雰囲気にざらされることから、下I−導体表面に
自然歇+t=臘が形成さn砿触不良の原因となっている
。1由の接置不撓の改善策としC,:Iンタクトーホー
ル形成後城空を保ったまま層成中間層、上I−4体τ叙
看し、こU)恢300℃から500’C程度のi夏範囲
で熱処理しC中間層窃質を下層4棒中へ拡妓、e*化さ
せる方法がある。しかし、この方法には熱処層によるプ
ロセス工数の増力口、接触特性の低い再現性、漬晶拉の
成灸といった閲層点が残されている。符に、1Aバグル
素子の場合、−m−の熱処理は導体・つストレスを増加
させ、磁気バブルの転送′?8性ta化させるという閲
−もめる。
Conventionally, conduction between conductors has been achieved by forming a contact hole in the pongee layer covering the F-layer conductor and then etching the narrow surface of the lower layer conductor immediately before depositing the upper layer conductor. -dicIc'pL811) Aluminum conductor used as wiring material - For example, an alumina layer made of full minicum thorny surface [Chemical L-etching using Yorin wrt, etc., or substrate using argon io/ , Tae, Chi/Gumerii is so talented,
removed by ching. However, in these four methods, the sample is exposed to the atmosphere again before the upper layer conductor is attached, so a natural layer + t = 0 is formed on the surface of the lower conductor. n It causes poor contact. As a measure to improve the inflexibility of the first case, after forming the contact hole, we constructed a stratified intermediate layer while maintaining the upper I-4 body. There is a method of heat treatment in the I summer range to spread the C intermediate layer into the lower layer 4 rods and convert it to E*. However, this method still has some disadvantages, such as increasing the number of process steps due to the heat treatment layer, low reproducibility of contact characteristics, and moxibustion of pickled crystals. On the other hand, in the case of a 1A bugle element, -m- heat treatment increases the stress on the conductor and reduces the transfer of magnetic bubbles. There are speculations that it will turn into an octogenarian.

不発明の1.JIIJは、このような従来・の欠点を除
去しC導体間の接触特性の優れた多層導体を有する糸子
τ従供rることである。
Uninvented 1. JIIJ eliminates these conventional drawbacks and uses a multilayer conductor with excellent contact characteristics between C conductors.

上記1四に征い木兄に!Aは、絶縁体基板あるいは表面
が絶縁−で覆われた基板上に複数層の崖なり合りた尋捧
t″仔する索子において、前記導体の少なくとも一部は
その表面の一部ま友は全部に炭素表全備えている多ノー
導体を有する素子である。
To Seiki-nii in 14 above! A is a cable having a plurality of layers formed on an insulating substrate or a substrate whose surface is covered with an insulating layer, in which at least a portion of the conductor is partially covered with an insulating layer. is an element having a multi-no conductor, which has a full carbon surface.

以下図面3−)照しながら、本発明を詳細に一例する。Hereinafter, an example of the present invention will be explained in detail with reference to Figure 3-).

第1図に示すように/II!1縁体基板あるいは表面に
憩−朕をυつ譲板11上に4体7d112とその上に被
Mした炭パ膚13から成る第一導体層を形成し、この第
一4体ノーに一部また/よ全扉虚なるように第二4体t
fir 14 k形成する。導体層JP炭素層の成騰は
4子ビーム蒸4法やスパッタ蒸着法で行ない、これらの
加工はスバツタエ、チング法やイオンエツチング法など
で行なう、特に、導体ノー上に炭素層が414さ4てい
る場合には、これらは上lのドライエツチング法により
加工しなければならない。炭素層のみを一部または全s
VJ去したい場合には酸素をエツチングガスとする反応
性スバ、タエッチングを用いるのが有効である。
As shown in Figure 1 /II! A first conductor layer consisting of four bodies 7d112 and a carbon fiber layer 13 covered thereon is formed on a single edge substrate or a transfer plate 11 having a break on the surface, and a Part Matata/The second 4th body so that all the doors are empty
form fir 14k. The formation of the conductor layer JP carbon layer is performed by the quadruple beam evaporation method or the sputter evaporation method, and these processings are performed by the wafer etching method, the ion etching method, etc. In particular, when the carbon layer is formed on the conductor layer, If so, they must be processed by the dry etching method described above. Part or all of the carbon layer
When it is desired to remove the VJ, it is effective to use reactive etching using oxygen as the etching gas.

この構成では導体層間の一触部に炭素層が存在するため
に両者の導通が容易に再現性よく達成される。これは、
講−導体層を形成後、この基&を大気中にさらしても導
体層は咳化展が形成されにくい炭1層に被覆されている
ため酸化しないことに依る。従って、侍に本構成は表面
に酸化物を形成しやすいアルミニウム系導体などに用い
ると有効である。炭素の抵抗率は導体材料の100倍か
らi ooo倍の大きさであるが、炭票展厚′に菓子の
贋求に合せて数loXρ・ら数1ooX<選定すること
によって接触抵抗が無視できる素子が得られる。
In this configuration, since the carbon layer exists at the contact point between the conductor layers, conduction between the two can be easily achieved with good reproducibility. this is,
This is because even if the conductor layer is exposed to the atmosphere after forming the conductor layer, it will not oxidize because the conductor layer is coated with a single layer of charcoal that does not easily cause the formation of charcoal. Therefore, this configuration is effective when used for aluminum-based conductors, etc., which tend to form oxides on the surface. The resistivity of carbon is 100 to iooo times as large as that of conductive materials, but the contact resistance can be ignored by selecting the charcoal plate expansion thickness from several lo An element is obtained.

しかも、この構成にすれば、飯触特性をaJIするため
の熱処理が不必要となり、プロセス工数の低減が可能と
1.1″る。第1図は二層導体を有する素子を示してい
るが、二層以上の多層導体をイする素子も同様なm成で
実現される。また、ここでは第−導体l−上に直接第二
導体層が重なった構成を示しているが、第2図に示すよ
うに第二導体層が第−導体ノー上にコンタクトホールを
備えたスペーサ層21を介して形成されていても第1図
の一1jIl盆と同様な幼果が得られる。
Furthermore, with this configuration, heat treatment for aJI is not required, and the number of process steps can be reduced by 1.1". Although Figure 1 shows an element with a two-layer conductor, , an element having a multilayer conductor of two or more layers can also be realized with a similar configuration.Furthermore, here, a configuration in which the second conductor layer is directly overlaid on the first conductor l- is shown, but as shown in FIG. Even if the second conductor layer is formed on the first conductor via a spacer layer 21 provided with a contact hole as shown in FIG. 1, a young fruit similar to that in the tray shown in FIG.

次に実厖凶tボす。Next, I'm going to shoot a real joke.

4子ビーム魚7IIj法によりガラス基板上にア9ルミ
、ニウム、炭媚を連−してそれぞれ3000A 、 l
 OOA値層した。この躾上にポジ型フォトンシスト(
シラプレー社製AZ1350J)を用いた通常のフォト
ンシスト−11−mでレンズ9ドパターンを形成し、5
00VJJρ連のアルゴンイオンでイオンエツチングし
C@10μrn、tLざlagのアルミニウムと成業の
二ノーから成る第一→体1−を作製した0次に、基板表
面にアルミニウム6000X @z着した後、この上ニ
形成したレジストパターンマスクを用いて上述の禾件で
イオンエツチングし第二導体層、を作製した。
Aluminium, nickel, and charcoal were deposited on a glass substrate using the 4-beam fish 7II method at 3000 A and 1, respectively.
OOA value layered. A positive photon cyst (
A lens 9 pattern was formed using a normal photon cyst-11-m using Silapray AZ1350J), and
Ion-etched with 00VJJρ series of argon ions to fabricate a first body 1- consisting of C@10μrn, tLzalag aluminum and Seiyaku's Nino. Next, after depositing aluminum 6000X@z on the substrate surface, Using the resist pattern mask thus formed, ion etching was performed under the conditions described above to produce a second conductor layer.

オーバーエツチングは1分間行なったが、炭素層は約6
0人しかエツチングされず第一導体層の形状は維持され
る。導体層間に炭素層を設けた本構成では、従来の構成
に比べ接触抵抗を大幅に減少させることができた。しか
も、接触抵抗の存在による導体層間の抵抗値のばらつき
は無視できる。
Over-etching was carried out for 1 minute, but the carbon layer was approximately 6
Only 0 layers are etched, and the shape of the first conductor layer is maintained. With this configuration in which a carbon layer is provided between conductor layers, contact resistance can be significantly reduced compared to conventional configurations. Furthermore, variations in resistance between conductor layers due to the presence of contact resistance can be ignored.

一方、他の構成として導体層間にスペーサrak用いた
ものを作製した。上述の方法で第一導体層を形成した後
、この上にプラズマ気相成長法により306OAの二酸
化ケイ素威を被着した。この成展は、訛量比l対15の
シランと亜酸化皇巣の4合ガスを用いて、ガス圧力I 
Torr 、 m周awL力臂度0.IW/7の条件で
行なった6次に、この上に形成したレジストパターンマ
スクを用いて、プラズマエツチング法によりコンタクト
ホールヲ形成した。このプラズマエツチングtよエツチ
ングガスにフRy 114と酸素の10対2の混合ガス
tmイテ、−Hx圧力ITorr、高J4′tIL電力
40QWの条件で何な9た。この後、第一導体層と同様
な方法で膜厚6000AO第二4体層1に形成した。こ
の4成でもベペーサl−がない場合と同様な結果が傷ら
7した。
On the other hand, as another structure, one in which a spacer rak was used between the conductor layers was manufactured. After forming the first conductor layer in the manner described above, 306 OA of silicon dioxide was deposited thereon by plasma vapor deposition. This development was achieved using a gas mixture of silane and suboxide with a ratio of 1 to 15, and a gas pressure of I.
Torr, m circumference awL force and elbow degree 0. 6 Next, contact holes were formed by plasma etching using the resist pattern mask formed thereon under conditions of IW/7. This plasma etching was carried out under the following conditions: the etching gas was a 10:2 mixed gas of Ry 114 and oxygen, -Hx pressure ITorr, and high J4'tIL power 40QW. Thereafter, a second fourth conductor layer 1 having a thickness of 6000 AO was formed in the same manner as the first conductor layer. Even with this 4-component, the same results as in the absence of Bepaca l- were obtained.

以上説明したように本発明によれば、プロセスが闇早で
1.4f)fi持性5誹−れた多、−導体を有する素子
が舟らt’Lる。ぽお、本夫施例では導体材料としてア
ルミニウムを用いた場合について説明したが、1圓のど
ん7よ4俸材料管用いでも同様の効果が慢らtしること
はg5までもない。
As explained above, according to the present invention, an element having a multi-conductor having a 1.4 f) fi property can be produced at an early stage of the process. In the example, aluminum is used as the conductor material, but the same effect can be obtained even if a tube of 1 or 4 tubes is used.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図:&3↓び第2図は本発明の多1−導体の基本り
なfil成tボす斜視図である。 図にεいで、llは基板、12は導体層、13は炭A 
ノd、14は第二導体ノー、21はコンタクトホーk 
zもつスペーサ層である。
Figures 1 and 2 are perspective views of the basic filtration structure of the multi-conductor of the present invention. In the figure, ε is shown, ll is the substrate, 12 is the conductor layer, and 13 is carbon A.
d, 14 is the second conductor no, 21 is the contact hole k
It is a spacer layer with z.

Claims (1)

【特許請求の範囲】[Claims] 41!!#俸−m仮あるいは表面が絶−一で覆われた基
板上に楓威I−の電なり合った導体を有j411菓子に
iいて、−記4棒の少なくとも一ノー會よその表面の一
部または全部に炭acWkt備えていることを特徴とt
4チ44体を有する素子。
41! ! On a board whose surface is covered with a wire or with a wire, there is a conductor that matches the electric current of the wire, and at least one of the four rods is connected to one of the surfaces of the board. It is characterized in that part or all of it is equipped with charcoal acWkt.
An element with 4chi and 44 bodies.
JP18880781A 1981-11-25 1981-11-25 Element having multi-layer conductor Granted JPS5890738A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18880781A JPS5890738A (en) 1981-11-25 1981-11-25 Element having multi-layer conductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18880781A JPS5890738A (en) 1981-11-25 1981-11-25 Element having multi-layer conductor

Publications (2)

Publication Number Publication Date
JPS5890738A true JPS5890738A (en) 1983-05-30
JPH0261142B2 JPH0261142B2 (en) 1990-12-19

Family

ID=16230142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18880781A Granted JPS5890738A (en) 1981-11-25 1981-11-25 Element having multi-layer conductor

Country Status (1)

Country Link
JP (1) JPS5890738A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0564435U (en) * 1992-01-31 1993-08-27 スズキ株式会社 Governor shaft mounting device for engine governor

Also Published As

Publication number Publication date
JPH0261142B2 (en) 1990-12-19

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