JPS59107576A - 混相系アモルフアスシリコン膜の製造方法 - Google Patents

混相系アモルフアスシリコン膜の製造方法

Info

Publication number
JPS59107576A
JPS59107576A JP57216992A JP21699282A JPS59107576A JP S59107576 A JPS59107576 A JP S59107576A JP 57216992 A JP57216992 A JP 57216992A JP 21699282 A JP21699282 A JP 21699282A JP S59107576 A JPS59107576 A JP S59107576A
Authority
JP
Japan
Prior art keywords
film
amorphous silicon
silicon film
ions
multiphase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57216992A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0514414B2 (fr
Inventor
Haruo Ito
晴夫 伊藤
Tadashi Saito
忠 斎藤
Masatoshi Utaka
正俊 右高
Nobuo Nakamura
信夫 中村
Nobuyoshi Kashu
夏秋　信義
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57216992A priority Critical patent/JPS59107576A/ja
Publication of JPS59107576A publication Critical patent/JPS59107576A/ja
Publication of JPH0514414B2 publication Critical patent/JPH0514414B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
JP57216992A 1982-12-13 1982-12-13 混相系アモルフアスシリコン膜の製造方法 Granted JPS59107576A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57216992A JPS59107576A (ja) 1982-12-13 1982-12-13 混相系アモルフアスシリコン膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57216992A JPS59107576A (ja) 1982-12-13 1982-12-13 混相系アモルフアスシリコン膜の製造方法

Publications (2)

Publication Number Publication Date
JPS59107576A true JPS59107576A (ja) 1984-06-21
JPH0514414B2 JPH0514414B2 (fr) 1993-02-25

Family

ID=16697108

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57216992A Granted JPS59107576A (ja) 1982-12-13 1982-12-13 混相系アモルフアスシリコン膜の製造方法

Country Status (1)

Country Link
JP (1) JPS59107576A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4897368A (en) * 1987-05-21 1990-01-30 Matsushita Electric Industrial Co., Ltd. Method of fabricating a polycidegate employing nitrogen/oxygen implantation
US4945065A (en) * 1988-06-02 1990-07-31 Mobil Solar Energy Corporation Method of passivating crystalline substrates
US5137839A (en) * 1990-05-28 1992-08-11 Kabushiki Kaisha Toshiba Method of manufacturing a bipolar transistor having polysilicon layer which serves as an emitter electrode and passivating dangling bonds
JP2011513997A (ja) * 2008-03-05 2011-04-28 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 太陽電池の連鎖注入の使用

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4897368A (en) * 1987-05-21 1990-01-30 Matsushita Electric Industrial Co., Ltd. Method of fabricating a polycidegate employing nitrogen/oxygen implantation
US4945065A (en) * 1988-06-02 1990-07-31 Mobil Solar Energy Corporation Method of passivating crystalline substrates
US5137839A (en) * 1990-05-28 1992-08-11 Kabushiki Kaisha Toshiba Method of manufacturing a bipolar transistor having polysilicon layer which serves as an emitter electrode and passivating dangling bonds
JP2011513997A (ja) * 2008-03-05 2011-04-28 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 太陽電池の連鎖注入の使用

Also Published As

Publication number Publication date
JPH0514414B2 (fr) 1993-02-25

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