JPS59128809A - Production of elastic surface wave element - Google Patents
Production of elastic surface wave elementInfo
- Publication number
- JPS59128809A JPS59128809A JP58004041A JP404183A JPS59128809A JP S59128809 A JPS59128809 A JP S59128809A JP 58004041 A JP58004041 A JP 58004041A JP 404183 A JP404183 A JP 404183A JP S59128809 A JPS59128809 A JP S59128809A
- Authority
- JP
- Japan
- Prior art keywords
- stem
- header
- piezoelectric substrate
- adhesive
- acoustic wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/058—Holders or supports for surface acoustic wave devices
- H03H9/0585—Holders or supports for surface acoustic wave devices consisting of an adhesive layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
「発明の技術分野」
本発明は弾性表面波素子の製造方法に係り、特に入力電
極および出力電極を形成した圧電基板を接着剤により効
果的にステム上に載置固定し得る弾性表面波素子の製造
方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for manufacturing a surface acoustic wave device, and in particular to a method for manufacturing a surface acoustic wave device, in particular a method for effectively mounting and fixing a piezoelectric substrate on which input electrodes and output electrodes are formed on a stem using an adhesive. The present invention relates to a method of manufacturing a surface acoustic wave device that can be used.
「発明の技術的背景」
一般に、弾性表面波素子の製造方法としては第1図ない
し第7図に示Jような方法が用いられている。"Technical Background of the Invention" Generally, as a method for manufacturing a surface acoustic wave device, a method as shown in FIGS. 1 to 7 is used.
すなわち、第2図に上面図、第3図に第2図のX−X線
に沿った縦断面図を示ずステムヘッダ1をプレス加工し
、所定位置に孔部9を設け、このステムヘッダ1の孔部
9に、第4図に斜視図を示すカラスボタン2を介し、第
5図に14視図を示す導電リードビン3を貫通植設し、
この状態で約1050℃ないし約1080℃で焼成封止
しステム4を作成する。That is, FIG. 2 shows a top view, and FIG. 3 shows a vertical cross-sectional view taken along the line X-X in FIG. A conductive lead bottle 3, shown in a perspective view in FIG. 5, is implanted through the hole 9 of 1 through the crow button 2, shown in a perspective view in FIG.
In this state, the stem 4 is produced by firing and sealing at about 1050° C. to about 1080° C.
このステム4の平坦なヘッダ主面上のほぼ中央部に圧電
基板6の底面積よりやや小さい面積(約90%)で、接
着剤5としてエポキシ接着剤等を第6図に縦断面図を示
すように塗布し、この塗布面に第7図に縦断面図を示す
様に、L! Ta 03、LiNbO3、セラミックス
等からなり、その−主面上に入力電極と、この入力電極
に接続されているシールドitと、このシールド電極を
介して入力電極に対設された出力電極と吸音部材層とが
形成されていて他の主面が粗面加工されている圧電基板
6を載置し、120℃ないし140℃で約1.5時間な
いし2時間程度加熱し、接着剤5を硬化させ圧電基板6
をステム4の一生面上に接着固定する。An epoxy adhesive or the like is applied as an adhesive 5 approximately at the center of the flat header main surface of the stem 4 in an area (approximately 90%) smaller than the bottom area of the piezoelectric substrate 6, as shown in FIG. 6 in a vertical cross-sectional view. As shown in the longitudinal cross-sectional view of FIG. It is made of Ta03, LiNbO3, ceramics, etc., and has an input electrode on its main surface, a shield IT connected to this input electrode, an output electrode and a sound absorbing member arranged opposite to the input electrode via this shield electrode. A piezoelectric substrate 6 on which a layer is formed and the other main surface is roughened is placed and heated at 120° C. to 140° C. for about 1.5 to 2 hours to harden the adhesive 5. Piezoelectric substrate 6
is glued and fixed on the permanent surface of stem 4.
このようにして作成したステム4の導電リードビン3か
ら、第1図に縦断面図を示すように、圧電基板6の主面
に設りられている入力電極および出力電極の各端子にボ
ンディングワイヤ7をボンディングし、ステム4の外周
面部にシェル8を溶接し気密封止して弾性表面波素子が
作成される。From the conductive lead bin 3 of the stem 4 thus created, bonding wires 7 are connected to each terminal of the input electrode and output electrode provided on the main surface of the piezoelectric substrate 6, as shown in the vertical cross-sectional view in FIG. The shell 8 is welded to the outer peripheral surface of the stem 4 and hermetically sealed, thereby producing a surface acoustic wave element.
なお、上述の接着剤5を加熱硬化し圧電基板6をステム
4主面上に接着固定する工程では、圧電基板6とステム
4の主面間の接着剤層の厚さを一定、かつ均一にしてバ
ルク波の反射の抑制や圧電基板6とステム4との間の分
布容量を均一にする方法がとられるのが通常であるが、
この工程中で往々圧電基板6の自重により接着剤5が圧
電基板6の側面にはみ出し、圧電基板6の主面上に這い
上がって入力電極や出力電極に被着することにより弾性
表面波素子の特性不良が発生したり、機械的衝撃や熱的
衝撃で圧電基板6にクラックが発生したりする。また、
圧電基板6の側面に押出された接着剤5がステム4の主
面側のガラス上を流動し、ボンディングを施す導電リー
ドビン3のポスト上に這い上がり被着してボンディング
がオープンとなる不良も発生していた。In addition, in the step of heating and curing the adhesive 5 and adhesively fixing the piezoelectric substrate 6 onto the main surface of the stem 4, the thickness of the adhesive layer between the piezoelectric substrate 6 and the main surface of the stem 4 is kept constant and uniform. Usually, methods are used to suppress the reflection of bulk waves and to make the distributed capacitance between the piezoelectric substrate 6 and the stem 4 uniform.
During this process, the adhesive 5 often protrudes from the side surface of the piezoelectric substrate 6 due to its own weight, climbs up onto the main surface of the piezoelectric substrate 6, and adheres to the input electrodes and output electrodes, thereby forming a surface acoustic wave element. Poor characteristics may occur, or cracks may occur in the piezoelectric substrate 6 due to mechanical shock or thermal shock. Also,
The adhesive 5 extruded on the side surface of the piezoelectric substrate 6 flows on the glass on the main surface side of the stem 4 and creeps up and adheres to the post of the conductive lead bin 3 to which bonding is performed, resulting in defects such as open bonding. Was.
さらに、第6図に示すステム4上に接着剤5を塗布する
工程でも、圧電基板6を接着接合する部分のステム4の
主面が平坦であり、接着剤5との濡れ性が劣るため、そ
の後熱硬化処理した後に圧電基板6の裏面とステム4の
主面との間に接着剤が存在しない部分や塗膜の膜厚ムラ
等が発生し、素子電極容量の不良やバルク波抑制効果の
劣化によりトラップ減衰不良やリップル不良等の弾性表
面波素子特性不良が発生していた。Furthermore, in the step of applying the adhesive 5 onto the stem 4 shown in FIG. 6, the main surface of the stem 4 where the piezoelectric substrate 6 is adhesively bonded is flat, and the wettability with the adhesive 5 is poor. After the heat curing process, parts where no adhesive is present between the back surface of the piezoelectric substrate 6 and the main surface of the stem 4, uneven coating film thickness, etc. occur, resulting in defects in element electrode capacitance and in the bulk wave suppression effect. Due to deterioration, surface acoustic wave element characteristic defects such as trap attenuation defects and ripple defects occurred.
このような弾性表面波素子の特性不良の発生を防ぐため
に、第8図に縦断面図を示すように、ステムヘッダ1の
製作の際、ステムヘッダ1の圧電基板6を載置する側の
主面にカーボランダム等の研磨剤粉末を用いてホーニン
グ加工し凹凸の粗面加工部10を形成する方法も用いら
れている。In order to prevent the occurrence of such characteristic defects of the surface acoustic wave element, as shown in the vertical cross-sectional view in FIG. A method is also used in which the surface is honed using an abrasive powder such as carborundum to form the roughened surface portion 10 having concavities and convexities.
[背景技術の問題点]
しかしながら、このようにホーニング加工を施し、ステ
ムヘッダ1の一生面上に凹凸の粗面加工部10を形成し
ても、この凹凸の粗面加工部10の凹凸形状のばらつき
を抑えることが難しく、ホーニング加工をしない製造方
法で発生していた接着剤5のはみ出し、流動等の現象の
防止効果が小ざくなり弾性表面波素子の特性不良が完全
には防止できなかった。[Problems with the Background Art] However, even if the honing process is performed in this way to form the uneven roughened portion 10 on the whole surface of the stem header 1, the uneven shape of the uneven roughened portion 10 is It was difficult to suppress variations, and the effect of preventing phenomena such as extrusion and flow of the adhesive 5 that occurred in manufacturing methods that did not involve honing was reduced, making it impossible to completely prevent characteristic defects in surface acoustic wave elements. .
ざらにホーニング加工をすることにより、ステムヘッダ
1の凹凸加工処理時間に大きな工数を要し、ステムヘッ
ダ1のコストアップの要因となったり、このホーニング
加工によりステムヘッダ1の主面上に施しCあるニッケ
ルメッキ被膜が破れ、このステムヘッダ1の素材の鋼板
が露出するため錆が発生するという欠点もあった。Rough honing requires a large number of man-hours to process the unevenness of the stem header 1, which increases the cost of the stem header 1. There was also the drawback that a certain nickel plating film was torn and the steel plate of the stem header 1 was exposed, causing rust.
[発明の目的コ
本発明はかかる従来の事情に対処してなされたもので、
ステム主面と圧電基板裏面との間の接着剤塗膜層を厚く
均一な状態で熱硬化させ得、かつ接着剤塗膜上に圧電基
板を載置し加熱硬化させた後に接着剤が圧電基板側面か
らはみ出すことを防ぐことができ、さらに圧電基板をス
テム主面と平行に接着固定し得る弾性表面波素子の製造
方法を提也しようとするものである。[Object of the Invention] The present invention has been made in response to such conventional circumstances,
The adhesive coating layer between the main surface of the stem and the back surface of the piezoelectric substrate can be thermally cured in a thick and uniform state, and after the piezoelectric substrate is placed on the adhesive coating and heated and cured, the adhesive coats the piezoelectric substrate. The present invention aims to provide a method for manufacturing a surface acoustic wave element that can prevent the piezoelectric substrate from protruding from the side surface and also can adhesively fix the piezoelectric substrate parallel to the main surface of the stem.
[発明の概要]
すなわち本発明は、プレス加工でステムヘッダを製作し
、このステムヘッダにガラスボタンおよび導電リードビ
ンを植設し焼成封止して作成したステム上に接着剤を塗
布し、この接着剤上に、入力N極と出力電極とが形成さ
れた圧電基板を載置して、接着剤を加熱硬化することに
より圧電基板を前記ステム上に接着固定し、前記導電リ
ードビンと圧電基板上の電極をポンディングワイヤで接
続し、さらに前記ステム上にシェルを冠着する弾性表面
波素子の製造方法において、前記ステムヘッダのプレス
加工時に刻印プレス金型を用い−Cステムヘッダ上に凹
凸の粗面加工部を刻設することを特徴とする弾性表面波
素子の製造方法である。[Summary of the Invention] That is, the present invention manufactures a stem header by press working, implants a glass button and a conductive lead bottle into the stem header, and seals the stem by baking, and then applies an adhesive to the stem. A piezoelectric substrate on which an input N pole and an output electrode are formed is placed on the adhesive, and the piezoelectric substrate is adhesively fixed on the stem by heating and curing the adhesive, and the conductive lead bin and the piezoelectric substrate are bonded and fixed on the stem. In the method for manufacturing a surface acoustic wave device in which electrodes are connected with bonding wires and a shell is mounted on the stem, an engraved press mold is used to press the stem header. This is a method of manufacturing a surface acoustic wave device, which is characterized by carving a surface-processed portion.
「発明の実施例」
以下本発明の詳細を第9図ないし第18図を参照しなが
ら説明する。"Embodiments of the Invention" Details of the present invention will be described below with reference to FIGS. 9 to 18.
第9図は本発明になる弾性表面波素子の製造方法により
製造した弾性表面波素子の縦断面図であり、第10図は
本発明になる弾性表面波素子の製造方法の刻印プレス金
型でプレス加工したステムヘッダ1の上面図、第11図
はこの第10図のステムヘッダ1のY−Y線に沿っての
縦断面図である。第12図、第13図はそれぞれ本発明
の弾性1面波素子の製造方法に用いるガラスボタン2、
導電リードビン3の斜視図であり、第14図、第15図
は本発明になる弾性表面波素子の製造方法の工程の一部
を示す縦断面図である。第16図ないし第18図は本発
明になる弾性表面波素子の製造方法の刻印プレス金型で
プレス加工したステムヘッダ1の凹凸の粗面加工部11
を拡大しC示す縦断面図である。FIG. 9 is a longitudinal cross-sectional view of a surface acoustic wave device manufactured by the method of manufacturing a surface acoustic wave device according to the present invention, and FIG. 10 is a stamping press mold of the method of manufacturing a surface acoustic wave device according to the present invention. FIG. 11, a top view of the pressed stem header 1, is a longitudinal sectional view of the stem header 1 of FIG. 10 taken along the Y-Y line. FIG. 12 and FIG. 13 respectively show a glass button 2 and a
It is a perspective view of the conductive lead bin 3, and FIGS. 14 and 15 are longitudinal sectional views showing a part of the process of the method for manufacturing a surface acoustic wave device according to the present invention. FIGS. 16 to 18 show a roughened surface 11 of the stem header 1 which has been pressed using the stamping press mold of the method for manufacturing a surface acoustic wave device according to the present invention.
It is an enlarged longitudinal cross-sectional view showing C.
次に本発明の弾性表面波素子の製造方法を工程を追いな
がら説明する。Next, a method for manufacturing a surface acoustic wave device according to the present invention will be explained step by step.
まず刻印プレス金型により、第10図、第11図に図示
するように、ステムヘッダ1の一生面上のほぼ中央部に
例えばメツシュ状に、第16図ないし第18図に示すよ
うな縦断面の凹凸の粗面加工部11を刻設する。この際
この凹凸の粗面加工部11の縦Da面の形状は、例えば
第16図に図示するようにV字状でもよいし、また第1
7図、第′18図にそれぞれ図示するようなU字状また
は梯形状でもよい。さらに図示はしないが、波形状また
は鋸歯状等の他の形状でもよい。First, as shown in FIGS. 10 and 11, by using a stamping press mold, a vertical cross section as shown in FIGS. A roughened surface 11 having concavities and convexities is carved. At this time, the shape of the vertical Da surface of the roughened surface processing portion 11 may be, for example, V-shaped as shown in FIG.
It may be U-shaped or ladder-shaped as shown in FIGS. 7 and 18, respectively. Further, although not shown, other shapes such as a wave shape or a sawtooth shape may be used.
また、この凹凸の粗面加工部11の凹凸形状の概略の寸
法は、例えば116図に図示する場合には、凹溝ピッチ
λ1は140μ11凹溝の開口部幅ぶ2は50μm1凹
溝の深ざdは50μm程度とするのが適切であり、凹溝
の本数は圧電基板6の幅方向に18本、長さ方向に82
本程度設(プるのが望ましいが、勿論これらの数値例に
限定されることなく、凹溝の形状を第10図に図示した
ようにメツシュ状にしないで、ステムヘッダ1の主面上
の縦方向または横方向の−方向のみに設けてもよい。In addition, the approximate dimensions of the uneven shape of the roughened surface processing portion 11 are, for example, in the case shown in FIG. It is appropriate that d is approximately 50 μm, and the number of grooves is 18 in the width direction of the piezoelectric substrate 6 and 82 in the length direction.
Although it is preferable to set the grooves to this degree, the present invention is not limited to these numerical examples. It may be provided only in the vertical or horizontal direction.
このようにして刻印プレス金型によりステムヘッダ1の
一生面上に凹凸の粗面加工部11を設け、さらに所定位
置に所定の個数(第10図図示の実施例の場合は4個)
の孔部9を設けた後に、このステムヘッダ1にニッケル
電気メッキを約2μmないし6μmの厚さで施ず。In this way, a roughened surface 11 is formed on the whole surface of the stem header 1 using a stamping press mold, and a predetermined number of roughened parts (four in the case of the embodiment shown in FIG. 10) are formed at a predetermined position.
After forming the hole 9, the stem header 1 is electroplated with nickel to a thickness of about 2 μm to 6 μm.
こうして作成したステムヘッダ1にガラスボタン2およ
び導電リードビン3を従来通り植設し、この状態で約1
050℃ないし1080℃で焼成封止して、ステム4を
作成する。以後従来の弾性表面波素子の製造方法と同様
に、第14図に図示する様に、ステム4の平坦なヘッダ
主面上のほぼ中央部に圧電基板6の底面積よりやや小さ
い面積でエポキシ系の接着剤5を塗布し、第15図に示
すIに、コ(1)塗布面に:I−i Ta O3、Li
Nb 03、セラミックス等がらなりその一生面上に
入力電極、シールド電極、出力電極および吸音部材層が
形成されていて他の主面が粗面加工されている圧電基板
6を載置し、120℃ないし140’Cで約1゜5時間
ないし2時間加熱し、接着剤5を硬化させ、圧電基板6
をステム4の一生面上に接着固定する。The glass button 2 and the conductive lead bin 3 are implanted in the stem header 1 thus created in the conventional manner, and in this state approximately 1.
The stem 4 is produced by firing and sealing at 050°C to 1080°C. Thereafter, in the same manner as in the conventional manufacturing method of surface acoustic wave elements, as shown in FIG. Apply the adhesive 5 shown in FIG.
A piezoelectric substrate 6 made of Nb 03, ceramics, etc., on which an input electrode, a shield electrode, an output electrode, and a sound absorbing material layer are formed, and whose other main surface is roughened, is mounted and heated to 120°C. The adhesive 5 is cured by heating for about 1.5 hours to 2 hours at 140'C to 140'C, and the piezoelectric substrate 6
is glued and fixed on the permanent surface of stem 4.
なお、この際熱硬化後の接着剤5の平均膜厚を30um
稈度とすることが望ましい。In addition, at this time, the average film thickness of the adhesive 5 after thermosetting is 30 um.
It is desirable to have culm.
このようにして作成したステム4の導電リードビン3か
ら圧電基板6の主面上の入力電極および出力電極の各端
子にポンディンクワイ1′77をボンディングし、ステ
ム4の外周面上にシェル8を溶接し、気密封止して弾性
表面波素子が出来上がる。Bonding wires 1'77 are bonded from the conductive lead bin 3 of the stem 4 thus created to each terminal of the input electrode and output electrode on the main surface of the piezoelectric substrate 6, and the shell 8 is placed on the outer peripheral surface of the stem 4. After welding and hermetically sealing, the surface acoustic wave device is completed.
[発明の効果コ
以上述べたように本発明の弾性表面波素子の製造方法に
よれば、圧電基板を接着固定せしめるステムの主面上に
刻印プレス金型を用いて凹凸の粗面加工部を刻設するよ
うにしたので、この凹凸の粗面加工部の寸法精度を向上
させ、また凹凸加工処理時間の工程も短縮でき、ステム
を大量に生産する際の能率が向上できる。また、ステム
ヘッダに凹凸加工後にニッケルメッキを施すのでステム
ヘッダの錆の発生を防止できる。[Effects of the Invention] As described above, according to the method for manufacturing a surface acoustic wave element of the present invention, a roughened surface is formed using a stamping press mold on the main surface of the stem to which the piezoelectric substrate is adhesively fixed. By engraving, it is possible to improve the dimensional accuracy of the roughened surface of the irregularities, and also to shorten the process time for processing the irregularities, thereby improving efficiency when producing stems in large quantities. In addition, since the stem header is nickel plated after roughening, it is possible to prevent the stem header from rusting.
さ、らに、ステムの主面上に接着剤を塗布する際、接着
剤が凹凸の粗面加工部の凹溝部にトラップされることに
より、滴れ不良による接着剤の弾き現象や偏肉現象を防
止でき、また接着剤加熱硬化後の接着剤の圧電基板の側
面へのはみ出しや這い上がりを防止でき、導電リードビ
ンや入力電極や出力電極等の端子でのポンディング不良
による弾性表面波素子の特性不良の防止ができるし、接
着剤をステム主面と圧電基板裏面との間に均一な厚さで
塗布でき、圧電基板をステム主面と平行に接着固定でき
るので、電極容量不良や弾性表面波素子のトラップ減衰
不足不良を防止でき、さらに機械的衝撃や熱的衝撃に対
して弾性表面波素子の基板のクラックの発生を防止でき
、弾性表面波素子の緒特性の改善効果が極めて大なるも
のがある。Furthermore, when applying adhesive to the main surface of the stem, the adhesive is trapped in the grooves of the roughened surface, resulting in adhesive repelling and uneven thickness due to poor dripping. It also prevents the adhesive from protruding or creeping up to the side of the piezoelectric substrate after the adhesive is heated and cured, and prevents surface acoustic wave elements from being damaged due to poor bonding at conductive lead bins, input electrodes, output electrodes, etc. It is possible to prevent defective characteristics, the adhesive can be applied with a uniform thickness between the main surface of the stem and the back surface of the piezoelectric substrate, and the piezoelectric substrate can be adhesively fixed parallel to the main surface of the stem, thereby preventing defects in electrode capacitance and elastic surfaces. It can prevent insufficient trap attenuation defects in wave elements, and it can also prevent the occurrence of cracks in the substrate of surface acoustic wave elements due to mechanical and thermal shocks, greatly improving the characteristics of surface acoustic wave elements. There is something.
第1図は従来の弾性表面波素子の製造方法により作成さ
れた弾性表面波素子の縦断面図、第2図は従来の弾性表
面波素子の製造方法によるステムヘッダの上面図、第3
図は第2図のX−X線に沿っての縦断面図、第4図は従
来の弾性表面波素子の製造方法に用いるガラスボタンの
斜視図、第5図は従来の弾性表面波素子の製造方法に用
いる導電リードビンの斜視図、第6図は従来の弾性表面
波素子の製造方法の一工程を表わす縦断面図、第7図は
従来の弾性表面波素子の製造方法の一工程を表わす縦断
面図、第8図は従来の他の弾性表面波素子の製造方法に
より作成された弾性表面波素子の縦断面図、第9図は本
発明になる弾性表面波素子の製造方法により作成された
弾性表面波素子の縦断面図、第10図は本発明の弾性表
面波素子の製造方法によるステムヘッダの上面図、第1
1図は第10図のY−Y線に沿っての縦断面図、第12
図は本発明の弾性表面波素子の製造方法に用いるガラス
ボタンの斜視図、第13図は本発明の弾性表面波素子の
製造方法に用いる導電リードビンの斜視図、第14図は
本発明の弾性表面波素子の製造方法の一工程を表わす縦
断面図、第15図は本発明の弾性表面波素子の製造方法
の一工程を表わす縦断面図、第16図は本発明によるス
テムヘッダの凹凸の粗面加工部の縦断面図、第′17図
は本発明によるステムヘッダの凹凸の粗面加工部の伯の
縦断面図、第18図は本発明によるステムヘッダの凹凸
の粗面加工部の伯の縦断面図である。
1・・・・・・・・・・・・ステムヘッダ2・・・・・
・・・・・・・ガラスボタン3・・・・・・・・・・・
・導電リードビン4・・・・・・・・・・・・ステム
5・・・・・・・・・・・・接着剤
6・・・・・・・・・・・・圧電基板
7・・・・・・・・・・・・ボンディングワイヤ8・・
・・・・・・・・・・シェル
9・・・・・・・・・・・・孔 部
10.11・・・凹凸の粗而加工部
代理人弁理士 須 山 佐 −
第1図
第2図
第3図
第弓削図 第68
第7図
第8図FIG. 1 is a longitudinal cross-sectional view of a surface acoustic wave device manufactured by a conventional surface acoustic wave device manufacturing method, FIG. 2 is a top view of a stem header manufactured by a conventional surface acoustic wave device manufacturing method, and FIG.
The figure is a longitudinal cross-sectional view taken along the line X-X in Figure 2, Figure 4 is a perspective view of a glass button used in the conventional surface acoustic wave device manufacturing method, and Figure 5 is a cross-sectional view of a conventional surface acoustic wave element. A perspective view of a conductive lead bin used in the manufacturing method, FIG. 6 is a vertical cross-sectional view showing one step in a conventional method for manufacturing a surface acoustic wave device, and FIG. 7 shows a step in a conventional method for manufacturing a surface acoustic wave device. 8 is a vertical cross-sectional view of a surface acoustic wave device manufactured by another conventional method for manufacturing a surface acoustic wave device, and FIG. 9 is a vertical cross-sectional view of a surface acoustic wave device manufactured by a method for manufacturing a surface acoustic wave device according to the present invention. FIG. 10 is a longitudinal sectional view of the surface acoustic wave device according to the present invention, and FIG.
Figure 1 is a vertical cross-sectional view taken along the Y-Y line in Figure 10;
13 is a perspective view of a conductive lead bin used in the method of manufacturing a surface acoustic wave device of the present invention, and FIG. 14 is a perspective view of a glass button used in the method of manufacturing a surface acoustic wave device of the present invention. FIG. 15 is a vertical cross-sectional view showing one step in the method for manufacturing a surface acoustic wave device of the present invention, and FIG. 16 is a vertical cross-sectional view showing one step in the method for manufacturing a surface acoustic wave device according to the present invention. FIG. 17 is a vertical cross-sectional view of the roughened surface of the stem header according to the present invention, and FIG. 18 is a vertical cross-sectional view of the roughened surface of the stem header according to the present invention. FIG. 1... Stem header 2...
・・・・・・Glass button 3・・・・・・・・・・・・
・Conductive lead bin 4・・・・・・・・・・・・Stem 5・・・・・・・・・Adhesive 6・・・・・・・・・Piezoelectric substrate 7・・......Bonding wire 8...
・・・・・・・・・・Shell 9・・・・・・・・・・・・Bore 10.11・・・Patent attorney representing the uneven processing department Satoshi Suyama - Figure 1 Figure 2 Figure 3 Yuge Figure 68 Figure 7 Figure 8
Claims (2)
ヘッダにガラスボタンおよび導電リードビンを植設し焼
成封止して作成したステム上に接着剤を塗布し、この接
着剤上に、入力電極と圧力電極とが形成された圧電基板
を載置して、接着剤を加熱硬化することにより圧電基板
を前記ステム上に接着固定し、前記導電リードビンと圧
電基板上の電極をボンディングワイヤで接続し、さらに
前記ステム上にシェルを冠着する弾性表面波素子の製造
方法におい°C1前記ステムヘッダのプレス加工時に刻
印プレス金型を用いてステムヘッダ上に凹凸の粗面加工
部を刻設することを特徴とする弾性表面波素子の製造方
法。(1) A stem header is manufactured by press processing, a glass button and a conductive lead bottle are implanted in the stem header, and adhesive is applied onto the stem created by baking and sealing, and input electrodes are placed on the adhesive. A piezoelectric substrate on which a pressure electrode is formed is placed, the piezoelectric substrate is adhesively fixed on the stem by heating and curing the adhesive, and the conductive lead bin and the electrode on the piezoelectric substrate are connected with a bonding wire, Further, in the method for manufacturing a surface acoustic wave device in which a shell is mounted on the stem, a roughened surface portion having an uneven surface is engraved on the stem header using a stamping press die during press working of the stem header. A method for manufacturing a featured surface acoustic wave device.
状または梯形状または波形状とした凹凸部を一方向また
はほぼ直角方向に交叉するように刻設することを特徴と
する特許請求の範囲第1項記載の弾性表面波素子の製造
方法。(2) The uneven surface roughening portion is characterized by carving uneven portions having a V-shaped, U-shaped, ladder-shaped, or wavy cross-sectional shape so as to intersect in one direction or in a substantially right-angled direction. A method for manufacturing a surface acoustic wave device according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58004041A JPS59128809A (en) | 1983-01-13 | 1983-01-13 | Production of elastic surface wave element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58004041A JPS59128809A (en) | 1983-01-13 | 1983-01-13 | Production of elastic surface wave element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59128809A true JPS59128809A (en) | 1984-07-25 |
Family
ID=11573853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58004041A Pending JPS59128809A (en) | 1983-01-13 | 1983-01-13 | Production of elastic surface wave element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59128809A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05190692A (en) * | 1992-01-17 | 1993-07-30 | Sony Corp | Method of forming interlayer insulating layer |
| JPH0619269U (en) * | 1992-03-27 | 1994-03-11 | 株式会社ニチフ端子工業 | Connector for single wire connection |
| JPH0619268U (en) * | 1992-03-16 | 1994-03-11 | 株式会社ニチフ端子工業 | Single wire connector |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5749452U (en) * | 1980-09-03 | 1982-03-19 |
-
1983
- 1983-01-13 JP JP58004041A patent/JPS59128809A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5749452U (en) * | 1980-09-03 | 1982-03-19 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05190692A (en) * | 1992-01-17 | 1993-07-30 | Sony Corp | Method of forming interlayer insulating layer |
| JPH0619268U (en) * | 1992-03-16 | 1994-03-11 | 株式会社ニチフ端子工業 | Single wire connector |
| JPH0619269U (en) * | 1992-03-27 | 1994-03-11 | 株式会社ニチフ端子工業 | Connector for single wire connection |
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