JPS59143376A - Method of manufacturing photovoltaic device - Google Patents

Abstract

PURPOSE:To prevent the generation of coupling failure mainly due to the exfoliation of an electrode layer by covering the tip of the exposed part of the first electrode layer with a photosemiconductor layer, and then electrically connecting the second electrode layer of this photoelectric conversion region to the first electrode layer. CONSTITUTION:The extending end 4a' of the thin film semiconductor layer 4a extending out of the photoelectric conversion region 2a covers the tip 3b'' of the exposed part of the first electrode layer 3b exposed form the photoelectric conversion region 2b to the adjacent part. Further, the extension part 5a' of the second electrode layer 5a constituting said region 2a goes over said end 4a' of the layer 4a covering the tip 3b'' and then extends to the exposed part 3b' of the layer 3b forming the region 2b, thus impressing photovoltages generated at both the regions 2a and 2b to each other in series. When thus constructed, the second and first electrode layers of said region adjacent to each other firmly couple in electrical and mechanical manner, and accordingly the rate of generation of the coupling failure mainly due to the exfoliation of the electrode layer can be suppressed.

Description

DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a photovoltaic device that converts light energy directly into nausea energy. Photovoltaic devices, such as solar power devices, use inexhaustible sunlight as their main energy resource, so they are in the spotlight in countries where depletion of energy resources is a problem.

Figure 1 shows the original d'-sword device, (]) indicates the glass
Insulating substrates such as translucent plastic, (2a) (2b) (
20) are the first to
In the sixth optical I crown exchange chain plate, the y exchange if4 j or (2a
) (2b) (2c,) (/J eachzLi, Zetsu &
J 4 Fly, 1111111 to tin oxide (S
n O2), indium tin oxide (In20?l-8
nO2)4! li; chiseling 7=4 it li no first electrode IM (5a) (5b) (50,),
A V-shaped original semiconductor such as amorphous silicon with a PIN junction from the light incident side! Zeng (4a) (4b) (4C
] and a second trench layer (5a
, ) (5b) C50), and Y 11111 is a laminated horizontal tatami mat. Furthermore, the above-mentioned parallel NS
1 to 6 Kotan conversion shouts” (2a) (2b) (2C)
As shown in the enlarged view of the main part in FIG. 2, the insulating groups l1lIy, (
Exposed products (3b') (30') of the first eclipse layer (5b) (60) exposed on lj
4a) (4b) The second-pole layer (5a) extending from the top surface
) (5b) extensions (5a') (5b') are rI! Connected, i(fi'te!1f51~"Kl 6) light-
The parent song areas (2a), (2b), and (2c) are connected in the L%Ucffi column.

In such a device, one of the factors that affects the light utilization efficiency is that the light 'i4' of the 1st to 9th A5 lights that actually contribute to power generation is R exchange area (head mounting a) (2b) (20) cDb This is the sub-stand occupied by the sleeves. However, each photoelectric substation header (2a)
(2b) (2c) The separation till region that exists in coliJ contact 1'J distance a>c lowers the above-mentioned surface 114 ratio.

Therefore, in order to improve the light utilization efficiency, it is necessary to
mJJ戊(2a)(2b)(20) Mml"ll'M
The separation M4 machine 2 must be smaller.

The spacing reduction for each layer is the addition of 1. The photo-engraving technique, which is determined by lees and has excellent workability, is therefore promising. By this technique, the first layer is deposited on the entire surface of the substrate (1), and the individual first electrode layers (5a), (5b, C50) are separated by photoresist and etching, i.e. After successively performing a step of removing the adjacent spaced portions of each of the first electrode layers 1a), 5b, and 5c, the same adhesion and removal steps are performed for the optical semiconductor layers 4a, 4b, 40, and 1c. -1s2 Telegraph layers (5a), (5b), and (50) ICs will also be repeated again.

However, is the photo-etching technique mentioned above a Couette process such as water splashing? The first electrode layer (3b) as shown in FIG.
Between the tip (6b'') of the exposed portion (5b') of When a small gap δ is formed, a small amount of water, etchant, photoresist, etc. may remain in the gap 11 during the photolithographic process VC of the optical semiconductor layer (4a), and the removal and iVC The extension (5a') of the second electrode layer (5a) is deposited at
)' and the exposed portion (5b') of the first magnetic rut layer (5b) as a result of penetrating the residual material such as water, the extension portion (
There is a risk that sa') may peel off from the exposed portion C5b'), resulting in poor bonding.Pr: What were you doing?

(C) Purpose of the Invention The purpose of the present invention is to prevent bonding failures mainly caused by peeling by eliminating peeling of the electrically conductive 41iIi layer that connects adjacent optical converter heads at once. .

2) Configuration of the Invention A one-photovoltaic device developed by Tomomoto has a thin film binary semiconductor 1- with a first protruding portion provided on a substrate l1IIvC in an adjacent light conversion region, and a tip of the exposed portion. It has a configuration in which it is electrically connected across the covering optical semiconductor layer.

(e) Embodiment FIG. 6 is an enlarged cross-sectional view of the main part of the present invention, and shows the first light-magnetic change sandwiching region (2a) and the second element "
It shows the connection point adjacent to the tunai exchange head (2b). In other words, it extends from the first yuan tun exchange head (2a) located on the left side of the figure, but the thin film 2 element The exposed end (3b) of the first electrode layer (3b) is exposed adjacent to the extended end (4a') of the semiconductor layer (4a) from the second base (2b) on the right. Furthermore, the extension (5a') of the second polar layer (5a), which constitutes the first photoelectric conversion sentinel (2a), covers the exposed tip (5b'')k. i & optical semiconductor layer (4a)
The second photoelectric conversion area (2b') extends beyond the extending end (4a') of the
) to the exposed part (5b') of the first electrode layer (3b) forming Add.

The connecting structure also connects to other adjacent parts (not shown).

In this way, the tip of the exposed part (5b") of the VC first electrical box layer (3b)
The optical semiconductor layer (4a) covering the
++kQrj (3a) (?+b) (50) Upper entire surface i
c After the formation, it is patterned by photolithographic technology including a wet process, which has excellent precision processing properties. What must be kept in mind at this time is that the 1″-polar layer (5
The exposed tip (s b//) of the optical semiconductor layer (4)
a) shows the tip of the exposed portion (5b'') and the optical semiconductor layer (4a)
The first to sixth light layers (2a) to (2C) K
As a result of the electromotive force having the opposite polarity to the photostimulation force generated by the photovoltaic, it is necessary to make the force d of the optical semiconductor layer (4a) as small as possible in order to reduce the light utilization efficiency. It is a must. As a concrete example of the temporary wave width d to be prayed for, the maximum Mf trough width is 1 mJ)t(2a)(2b)(
2c], and the minimum allowable width is 1 μtn considering the butter 2:nog precision of photo-etching technology.
That's about it.

In order to compare the structure of the present invention with the conventional structure, the "misfired" person made 10,000 prototypes and found that the conventional yield was 4596. Can it be increased to 8596 by implementing the present invention? confirmed.

Is Fig. 4 the main part of another embodiment of the present invention? The difference from the original embodiment shown in FIG. A
: It has a continuation structure with the i-crest part (6b') of the first pole layer (5b). That is, the extension part (5b') of the second'-pole layer (5b) is the tip (5b') of the exposed part (Sb'J).
”) mirrors the optical semiconductor layer (4a), and thus has the same/(turn 1a: After patterning the second core layer (5a), a coupling magnetic pole 1-(6a) is provided to bridge the extended portion (5a) and the exposed portion (5b').

According to the praying structure, the optical semiconductor layers (4a) (4b) (40
) and 2'M IM (5a) (5b) (50) are the same pattern, so the optical semiconductor layer (4a) (ab
)(40)(/J patterning to the second electrode layer (5a)(
5b) (5c) Patterning of the optical semiconductor layer (4a) (ab) (ac) prior to the deposition formation of the second electrode layer (5a) (5b) (50), which may be performed after the deposition formation. The second electrode layer (5a) (5b) (5c) and the first electrode IFj (5a
) (5b) C50) is useful for preventing short circuit accidents with VC.

Furthermore, a 2'th polar layer (5a) is used as the coupling electrode layer (6a).
) (5b)C5c) If a similar material (e.g., material with higher moisture resistance than AI (e.g., λ, Ag, Ti, and an alloy containing at least one of them) is selected and used, the first electrode Layer (3b
) can suppress an increase in contact resistance caused by moisture at the bonding interface with the exposed portion (5b').

(f) Effects of the Invention The present invention is based on the above explanation.
! , the tip of the exposed part of the layer is covered with a photosemiconductor layer in the adjacent photoconductor exchange region, and the tip of the exposed part /a-acting photosemiconductor+i
and the second layer above the light converting head and the above-mentioned 1i.
: Since the pole layers are electrically connected, the above-mentioned centripetal pole layers in the optical conversion 1011 regions adjacent to each other are strongly pneumatically and mechanically VC-coupled, and the '-pole 1- is separated. The incidence rate of bond failure mainly caused by 'a' is 1 lll aE.

[Brief explanation of drawings]

Fig. 1 is a perspective view showing a part of a basic photovoltaic device, Fig. 2 is an enlarged cross-sectional view of the main part of the conventional example, and Fig. 6 is a perspective view showing the main parts of an embodiment of the present invention. Fig. 4 is an enlarged sectional view of a main part in another embodiment of the present invention. shown respectively. tl-S plate, (2a) (2b) C2c) -9+st ・
2nd and 6th photoelectric conversion heads, (5a) (!1b) (50
)...First electrode layer, (6b'')...Exposed portion tip, (
4a) (4b) (4c)--optical semiconductor layer,
(5a) (5b) (5c) = Second electrode layer, (6a)
-...Binding #i wax layer.

Claims (1)

[Claims] fll Thin optical layer? In a photovoltaic device in which a plurality of photoelectric conversion regions including a first electrode layer and a second electrode layer facing each other are arranged on the same substrate, The thin film and the photo-semiconductor layer are electrically connected to the exposed portion of the first electrode layer mounted on the substrate of the photoelectric conversion region, which is in momentary contact, across the photo-semiconductor layer covering the tip of the protruding portion. The original force device.