JPS59162014A - Cradle for cutting made of ceramics - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a pedestal used when cutting a single crystal wafer.

Conventionally, methods using a scriber and methods using a dicer are known as methods for cutting single crystal wafers. The former method involves creating scratches on the top surface of the wafer using a loaded diamond cutter and then cracking the wafer by applying pressure, but this becomes difficult when the wafer thickness exceeds 400 μm. On the other hand, the latter has a wafer thickness of 400μ
Even if the thickness exceeds m, there is no problem of thickness failure, and with the recent trend of increasing wafer thickness, the importance of this dicer method has increased. The general method of the dicer method is to adhere a polyimide film 3 onto a pedestal l made of unglazed ceramics or glass with an adhesive 2 such as wax, and then adhere a silicon wafer 5 thereon with an adhesive 4. A method is known in which the material is then cut into a predetermined size using a diamond wheel. The reason why the polyimide film is interposed between the silicon wafer and the pedestal in this case is as follows. In other words, when using a pedestal made of unglazed ceramics, if cutting is performed with the silicon wafer directly adhered without intervening a film, the tip of the diamond blade approaches the pedestal as the cutting progresses and eventually comes into contact with it. This is because if this process is repeated, the abrasion loss of the diamond blade increases, and because the adhesion between the silicon wafer and the unglazed ceramic is poor, small pieces of the silicon wafer may peel off during cutting. Furthermore, if a pedestal made of glass is similarly used without intervening a film, the adhesion to the silicon wafer is good, but the glass will be damaged during cutting. Therefore, polyimide film is indispensable for the conventional cutting method, but in the conventional method, this film cannot be used even though it is expensive and has drawbacks that hinder the simplification of the process. .

As a result of intensive research to overcome the above-mentioned drawbacks, the inventors found that by using machinable fluorine-mica ceramics as the material for the pedestal, single crystals can be produced at low cost through a simple process without the need for intervening films. They discovered that they could cut wafers.

The present invention has been obtained based on the above findings, and the gist thereof is as shown in FIG. A ceramic cutting pedestal characterized in that it is made of a ceramic sintered body.

The pedestal of the present invention is made of a fluorine mica sintered body with excellent machinability, so even if it comes into contact with the diamond blade repeatedly during use, there is little wear loss of the diamond blade, and the pedestal surface can be used easily. It has the advantage that by polishing it afterwards, the markings that occurred during the previous use disappear, making it possible to reuse it.

Considering the formability and sinterability during production, the cradle of the present invention is made of fluorine mica (A) (hereinafter abbreviated as (A)) with a particle size of 3 μm or less.
A sintered body (B) (hereinafter abbreviated as (B)) produced by embedding a molded body mainly composed of 1 to 10% by weight in a refractory powder having a fluorine content of 1 to 10% by weight is desirable. In addition, in order to improve sinterability and mechanical strength, the above (
Except for adding and containing sintering aids and reinforcing agents to B) (
A pedestal made of a sintered body manufactured under the same conditions as B) can also be used. To give an example of adding and containing a sintering aid and a reinforcing agent, fluoride mixture 5 to 6 was added to (A).
(C) containing 0% by weight (hereinafter referred to as (C)), and (A) containing 10 to 50% by weight of a fluoride mixture and 0.5 to 35% by weight of tungsten disulfide ( D) (hereinafter abbreviated as (D)), 10 to 50% by weight of an alkali metal, zinc and/or alkaline earth metal oxide-phosphoric acid frit added to (A) (E
) (hereinafter abbreviated as (E)) and (F) (hereinafter abbreviated as (F)) containing 10 to 30% by weight of a fluoride mixture and 0.5 to 25% by weight of carbon powder to (A). be. These (B) and (C).

(D), (E) and (F) are respectively JP-A-55-
No. 136171 [Method for producing sintered fluorinated mica ceramics], JP 56-17981 [Method for producing sintered sintered fluorinated mica ceramics], JP 56-3727
Publication No. 0 [Fluorine mica cera Publication No. 1983-69272 "
``Method for producing fluorine mica ceramic sintered body''.

This will be explained below using Examples and Comparative Examples.

Examples Fluorine phlogopite (K M g J A
1-s 13 olo F, ) 80 parts by weight of the powder was mixed with four kinds of fluorides as sintering aids in the molar ratio shown in the table, molded, and fired by burying to form a fluorine phlogopite sintered body. Manufactured.

For surface filling, refractory powder alumina 94 with a particle size of 10 μm or less is used.
The test was carried out under the conditions of a temperature of 1050° C. and a holding time of 4 hours in a mixed powder bed consisting of 3 parts by weight of aluminum fluoride and 3 parts by weight of potassium fluoride.

The obtained fluorine phlogopite sintered body was sliced into a shape of 130Φ×311 mm, which was used as a pedestal 7. The pedestal 7 was placed on a heater block set at a temperature of 150°C, and the diameter was After adhering a silicon wafer 6 with 41 nch and a thickness of 500 μm to the surface of the pedestal, the silicon wafer was cut into 5 square pieces using a diamond blade with a width of 50 μm.

During cutting, no peeling or chipping of the silicon wafer occurred. When the adhesive strength between the cut silicon chip and the pedestal was measured using the Busch gauge method, the average value for 20 silicon chips was 9.4 kg/CI.
+! Met.

Next, the pedestal was placed on the heater block again, the wax was melted, and the silicon wafer was peeled off.
Using this as a new pedestal, I performed the above cutting operation, and was able to cut the silicon wafer in the same way as before without any problems.

Comparative Example 1 A glass plate 1 having the same shape as the pedestal of the example was placed on a heater block set at a temperature of 150°C, a polyimide film 3 was adhered to the surface of the glass plate with wax 2, and wax 4 was further applied on top of the polyimide film 3. After bonding a silicon wafer 5 with a diameter of 4 in., the silicon wafer was cut into 5 square pieces using a 50 μm 11 diamond blade. During cutting,
Although the silicon wafer did not peel or chip, the polyimide film was also cut, so if the same glass plate was to be reused, a new and different film had to be used. In addition, when the adhesive strength between the cut silicon chip and the pedestal was measured in the same manner as in the example, it was found to be 5.2 k.
g/-.

Comparative Example 2 Cutting was performed under the same conditions as in Example except that the pedestal was a bisque ceramic plate, but a small piece of the silicon wafer was peeled off during cutting.

In the above embodiments, only silicon wafers were shown as samples to be cut, but the scope of use of the pedestal of the present invention is not limited to this, and various types of materials that can be cut using conventional cutting methods, such as gallium wafers and arsenic wafers, can be used. Can be used to cut crystal wafers.

The present invention will be extremely useful in the future field of electronics technology because it is possible to cut single-crystal wafers in a simple process and at low cost without causing any damage.

[Brief explanation of the drawing]

FIG. 1 is a vertical cross-sectional view showing a state in which a wafer is adhered to a conventional pedestal, and FIG. 2 is a vertical cross-sectional view showing a state in which a wafer is adhered to a pedestal according to the present invention. Figure 1 Procedural amendment (voluntary) Commissioner of the Patent Office Kazuo Wakasugi1, Indication of the case 1982 Patent application No. 363522, Name of the invention Ceramic cutting pedestal 3, Person making the amendment Related Patent Applicant Address Postal Code 467-91 14-18-4, Takatsuji-cho, Mizuho-ku, Nagoya City In the specification to be amended, the claims column and the detailed description of the invention column. 5. Contents of the amendment As shown in the attached sheet, 1. The scope of claims on page 1 of the specification has been amended as follows. (1) A ceramic cutting pedestal used for cutting a single crystal wafer, characterized in that the pedestal is made of a sintered fluorine mica ceramic. (2) The ceramic cutting pedestal according to claim 1, wherein the single crystal is silicon, gallium, or gallium arsenide. 2. On page 8, lines 12 and 13, "Arsenic wafers, etc." will be corrected to "Gallium arsenide wafers, etc."that's all

Claims (2)

[Claims] (1) A ceramic cutting pedestal used for cutting a single crystal wafer, characterized in that the pedestal is made of a fluorine mica ceramic sintered body. (2) The ceramic cutting pedestal according to claim 1, wherein the single crystal is silicon, gallium, or arsenic.