JPS59168917A - Magneto-resistance effect type magnetic head - Google Patents
Magneto-resistance effect type magnetic headInfo
- Publication number
- JPS59168917A JPS59168917A JP4320183A JP4320183A JPS59168917A JP S59168917 A JPS59168917 A JP S59168917A JP 4320183 A JP4320183 A JP 4320183A JP 4320183 A JP4320183 A JP 4320183A JP S59168917 A JPS59168917 A JP S59168917A
- Authority
- JP
- Japan
- Prior art keywords
- track
- width
- opposed
- larger
- magneto
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/398—Specially shaped layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
(イ)発明の技術分野
本発明は磁気抵抗効果型磁気ヘッドに関するものであシ
、特に少ないバイアス磁界でよシ大きな再生出力を得る
ことが可能な磁気抵抗効果型磁気ヘッドに関するもので
ある。Detailed Description of the Invention (a) Technical Field of the Invention The present invention relates to a magnetoresistive magnetic head, and particularly relates to a magnetoresistive magnetic head that can obtain a large reproduction output with a small bias magnetic field. It is related to the head.
(ロ)従来技術と問題点
従来磁気抵抗効果型磁気ヘッドとしては第1図に示した
構造を有する凧ヘッドが知られている。(b) Prior Art and Problems As a conventional magnetoresistive magnetic head, a kite head having the structure shown in FIG. 1 is known.
第1図によればNiFe ノ4−マロイ等の強磁性薄膜
よシなる磁気抵抗効果素子(MR素子)1.及びアルミ
ニウム等よシなるバイアス導体又は永久磁石2が蒸着お
るいけフォトリングラフィによシ、二酸化珪素(Sin
2)、アルミナ(At20. )のような絶縁層3を介
在して配置され、該絶縁層3はガラス基板4上にスパッ
タ法によシ装置されており、MR素子1の両側には磁気
ヘッドの分解能を向上するためのシールド磁性体5,6
が配置されている。ここで7は磁気ディスクまたは磁気
テープ等の記録媒体を示し矢印Aは該°記録媒体の移動
方向を示す。According to FIG. 1, a magnetoresistive element (MR element) made of a ferromagnetic thin film such as NiFe-4-Malloy 1. A bias conductor or permanent magnet 2 made of aluminum or the like is deposited by evaporation and photolithography, and silicon dioxide (Sin
2) The MR element 1 is arranged with an insulating layer 3 made of alumina (At20. Shielding magnetic materials 5 and 6 to improve the resolution of
is located. Here, 7 indicates a recording medium such as a magnetic disk or a magnetic tape, and arrow A indicates the moving direction of the recording medium.
第2図は第1図で用いられているMR累素子概略斜視図
である。ここでtは膜Jll 、 wは素子幅であシ、
tはコア幅であシ、凧素子には電流端子8から一定の電
流jが供給される。通常膜厚tは数10μm−程に選択
され、コア幅tは素子幅Wより十分長くして形状異方性
によシコア幅方向に磁化容易軸が向くようにMR素子に
は一軸異方性が必要である。−軸異方性を付与するため
に、磁場中蒸着等によって誘導異方性を利用することも
通常行なわれている。風素子1は外部磁界によってその
抵抗佃が変化する現象を利用して信号の検出を行なうわ
けであるが、外部磁界と抵抗値との関係はそのままでは
非線形であるそめ第1図に示したバイアス磁界発生手段
であるバイアス導体2によって凧素子に素子幅方向のバ
イアス磁界を印加し素子の動作を線形化する必要がある
。第3図Hm素子の抵抗率変化(Δρ)を示すグラフで
あシ、この特性はρ−ρ0+Δρ’ma工房2θで近似
的に表わされる。FIG. 2 is a schematic perspective view of the MR element used in FIG. 1. Here, t is the film Jll, w is the element width,
t is the core width, and a constant current j is supplied to the kite element from the current terminal 8. Usually, the film thickness t is selected to be several tens of micrometers, and the core width t is made sufficiently longer than the element width W to achieve shape anisotropy. is necessary. - In order to impart axial anisotropy, it is also common practice to utilize induced anisotropy by evaporation in a magnetic field or the like. The wind element 1 detects signals by utilizing the phenomenon that its resistance value changes due to an external magnetic field, but the relationship between the external magnetic field and the resistance value is nonlinear as it is. It is necessary to linearize the operation of the element by applying a bias magnetic field in the element width direction to the kite element using the bias conductor 2, which is a magnetic field generating means. FIG. 3 is a graph showing the resistivity change (Δρ) of the Hm element, and this characteristic is approximately represented by ρ−ρ0+Δρ′ma Kobo 2θ.
ここにρ0は抵抗率の最小値、Δρmax #′i抵抗
率変化量、θは凧素子の磁化ベクトルMと電流ベクトル
Jとのなす角であシ(第2図参照)、H−はθ=系とす
るのに要する磁界であって、皿膜の異方性磁界町と形状
反磁界H6との和でほぼ表わされる。ここでθ=シ4と
なるように独素子にバイアス磁界を印加すればMR素子
の動作はほぼ線形とカシ、ダイナミックレンジも最大と
なる。この場合所要パ形状反磁界H4は素子幅Wに反比
例するため、第2図に示した従来例の場合、トラック幅
tを小さくするに従い、素子幅Wも小さくするとMR素
子の所要バイアス磁界が太き欠な#)MR素子を線形動
作きせることが離しいという欠点があった。Here, ρ0 is the minimum value of resistivity, Δρmax #'i resistivity change, θ is the angle between the magnetization vector M of the kite element and the current vector J (see Figure 2), and H- is θ= The magnetic field required to form the system is approximately expressed by the sum of the anisotropic magnetic field of the dish film and the shape demagnetizing field H6. If a bias magnetic field is applied to the MR element so that θ=4, the operation of the MR element will be approximately linear, and the dynamic range will be maximized. In this case, the required para-shaped demagnetizing field H4 is inversely proportional to the element width W, so in the case of the conventional example shown in FIG. The disadvantage was that it was difficult to make the MR element perform linear operation.
第4図に飄膜の買方性磁界HKを50e1飽和磁化4π
MIIを10000 Gauss 、膜Wtを50μm
とした場合のHごと素子幅Wとの関係を数値解析によシ
求めた結果を示す。第4図から素子幅Wが10μm以下
になるとH−は急激に増大することがわかる。Figure 4 shows the magnetic field HK of the atomization film at 50e1 saturation magnetization 4π
MII: 10000 Gauss, film Wt: 50 μm
The results obtained by numerical analysis of the relationship between each H and the element width W in the case where It can be seen from FIG. 4 that H- increases rapidly when the element width W becomes 10 μm or less.
反磁界の増大を々くすためには素子幅Wを大きくすねは
よいが素子幅Wを大きくすると素子抵抗値自体の低下に
よって再生出力が減少する欠点があった。In order to reduce the increase in the demagnetizing field, it is good to increase the element width W, but when the element width W is increased, there is a drawback that the reproduction output decreases due to a decrease in the element resistance value itself.
更にトラック幅tと素子幅Wとの比νWが小さくなる程
BarkhansenH音と呼ばれる電、気抵抗の不連
続な変化が起シ、磁気ヘッドとしての特性を劣化させる
欠小を生じる。Furthermore, as the ratio νW between the track width t and the element width W becomes smaller, a discontinuous change in electrical and mechanical resistance called Barkhansen H sound occurs, resulting in defects that deteriorate the characteristics of the magnetic head.
(ハ)発明の目的
上記欠点を鑑み、本発明は、記録密度を向上させるため
、磁気ヘッドのトラック幅を狭めた場合においてもトラ
ック幅方向の形状反磁界が小さく、しかも磁気抵抗効果
素子の抵抗値が低下しない磁気抵抗効果型磁気ヘッドを
提供することを目的とする。(c) Purpose of the Invention In view of the above drawbacks, the present invention aims to improve the recording density by reducing the shape demagnetizing field in the track width direction even when the track width of the magnetic head is narrowed, and by reducing the resistance of the magnetoresistive element. An object of the present invention is to provide a magnetoresistive magnetic head whose value does not decrease.
に)発明の構成
本発明の目的はI板上の絶縁膜を介して形成された強磁
性薄膜と接続用導体層とを具備する磁気抵抗効果型磁気
ヘッドにおいて、該強磁性薄膜の長さが該ヘッドのトラ
ック幅よシも大きく、且つ骸トラックに対向する該強磁
性薄膜の部分の幅を、トラック幅以外の部分の幅よシも
大きくなるようにしたことを特徴とする磁気抵抗効果型
磁気ヘッドによって達成される。B) Structure of the Invention The object of the present invention is to provide a magnetoresistive magnetic head comprising a ferromagnetic thin film formed via an insulating film on an I plate and a connecting conductor layer, in which the length of the ferromagnetic thin film is A magnetoresistive effect type head, characterized in that the track width of the head is larger, and the width of the portion of the ferromagnetic thin film facing the dead track is also larger than the width of a portion other than the track width. This is achieved by a magnetic head.
(ホ)発明の実施例
以下、本発明の実施態様を図面に基づいて説明する。第
5図は本発明に係る磁気抵抗効果型磁気ヘッドの一実施
態様を示す概略平面図である。(E) Embodiments of the Invention Hereinafter, embodiments of the present invention will be described based on the drawings. FIG. 5 is a schematic plan view showing one embodiment of the magnetoresistive magnetic head according to the present invention.
第5図に示すように強磁性薄膜からなる磁気抵抗素子1
1はトラック(トラック幅z1)に対応する部分11m
とトラックに対向しない部分11bからなっている。こ
の磁気抵抗素子11の長さt2はトラック幅1.より大
きい。また骸素子のトラックに対向する部分11&の幅
W2はトラックに対向しない部分11bの幅町よシ大き
い。As shown in FIG. 5, a magnetoresistive element 1 made of a ferromagnetic thin film
1 is a portion 11m corresponding to the track (track width z1)
and a portion 11b that does not face the truck. The length t2 of this magnetoresistive element 11 is the track width 1. bigger. Further, the width W2 of the portion 11& of the skeleton element facing the track is larger than the width W2 of the portion 11b not facing the track.
既に述べたように形状反磁界は素子幅に反比例するため
、上記実施態様のようにトラックに対向しない部分11
bでの反磁界はトラックに対向する部分11mでの反磁
界に比べて非常に大きくすることが可能である。従って
トラックに対向しない部分の素子に対しては実効時にバ
イアス磁界がほとんど印加されないようにすることが可
能である。この場合、後で第7図で触れるようにトラッ
クに対向しない部分の素子抵抗変化は小さいために無視
出来る。これに対してトラックに対向する部分では反磁
界は小さく該素子11には十分なバイアス磁界を印加す
ることが出来る。As already mentioned, since the shape demagnetizing field is inversely proportional to the element width, the portion 11 that does not face the track as in the above embodiment
The demagnetizing field at b can be made much larger than the demagnetizing field at the portion 11m facing the track. Therefore, it is possible to apply almost no bias magnetic field to the elements in the portion not facing the track during effective operation. In this case, as will be discussed later in FIG. 7, the change in element resistance in the portion not facing the track is small and can be ignored. On the other hand, in the portion facing the track, the demagnetizing field is small and a sufficient bias magnetic field can be applied to the element 11.
第6図はトラックに対向する部分の飄素子11aの電流
経路を示す概略図であシ、電流jはトラックに対向しな
い部分の該素子の幅Wlの部分を流れると考えらね、ト
ラックに対向する部分11mにおいて前述のようにw2
をWlよシ大きく設定してもMR素子の抵抗値が低下し
ない。FIG. 6 is a schematic diagram showing the current path of the element 11a in the part facing the track. It is assumed that the current j flows in the part having the width Wl of the element in the part not facing the track. In the part 11m where w2
Even if Wl is set larger than Wl, the resistance value of the MR element does not decrease.
第7図はトラックに対向する部分11a及びトラックに
対向しない部分11bのMR素子の抵抗変化を示す図で
ある。縦軸は抵抗率ρ、横軸は磁化困難軸方向の外部磁
界であシ、HBの/Sイアス磁界に対して、トラックに
対向する部分11aの動作点がPl、トラックに対向し
ない部分11bの動作虞がP2になることを示している
。動作点P2における曲@Cの傾きは動作点P2におけ
る曲線りの傾きよシ十分に小さいので再生出力も非常に
小さいことが理解されよう。FIG. 7 is a diagram showing the resistance change of the MR element in the portion 11a facing the track and the portion 11b not facing the track. The vertical axis is the resistivity ρ, and the horizontal axis is the external magnetic field in the direction of the hard magnetization axis.With respect to the HB /S ias magnetic field, the operating point of the portion 11a facing the track is Pl, and the operating point of the portion 11b not facing the track is This indicates that the risk of operation is P2. It will be understood that since the slope of the song @C at the operating point P2 is sufficiently smaller than the slope of the curve at the operating point P2, the reproduction output is also very small.
本発明に係る児ヘッドの好適な実施例として、トラック
幅10μmのヘッドを実現する場合を考えると、フォト
マスクの精度および上に述べたようにトラックに対向す
る部分11aと対向しない部分11bでのHKの値を考
慮することによシ、第5図においてt+=10μm、t
!=3oμm、 Wl =5μff!+ W2 = 3
0μm程度に設定するのが好ましい。As a preferred embodiment of the child head according to the present invention, considering the case where a head with a track width of 10 μm is realized, the accuracy of the photomask and the portion 11a facing the track and the portion 11b not facing the track as described above are By considering the value of HK, t+=10 μm, t
! =3oμm, Wl =5μff! + W2 = 3
It is preferable to set it to about 0 μm.
(へ)発明の詳細
な説明したように本発明に係る磁気抵抗効果型磁気ヘッ
ドによりはトラック幅を狭めても形状反磁界が小さく、
しかも磁気抵抗効果素子の抵抗値が低下せず十分7!−
再生出力を得ることが出来る。(f) As described in detail, the magnetoresistive magnetic head according to the present invention has a small geometric demagnetizing field even when the track width is narrowed.
Moreover, the resistance value of the magnetoresistive element does not decrease and is 7! −
You can get playback output.
なお、以上の実施態様において基板上に1枚の磁気抵抗
効果型素子を形成した場合の例を用いて辻ぺたが、その
他絶縁層を介して磁気抵抗効果型素子を2枚平行に形成
し、それぞれの素子に流す電流で互いにバイアス磁界を
印加し合う形の磁気ヘッドヤ、するいけシャントバイア
ス型の磁気ヘッドにも第1用できる。In addition, in the above embodiment, using an example in which one magnetoresistive element is formed on a substrate, Peta Tsuji also forms two magnetoresistive elements in parallel with an insulating layer interposed therebetween. The present invention can also be used in a shunt bias type magnetic head, which is a type of magnetic head in which a bias magnetic field is applied to each element by a current flowing through each element.
第1図は従来技術を説明するための磁、@抵抗効果型磁
気ヘッドの概略断面図であり、第2図は第1図で用いら
れている磁気抵抗効果素子(MR累素子の概略斜視図で
おシ、第3図は風素子の抵抗率変化を示すグラフであシ
、第4図はMR膜のH−と凧素子幅Wの関係を数値解析
によシ求めた結果を示すものであシ、第5図は本発明に
係る磁気抵抗効果型磁気ヘッドの一実施態様を示す概略
平面図であり、第6図は本発明に係るトラックに対向す
る部分の凧素子の電流経路を示す概略図であシ、第7図
は本発明に係る一実施態様におけるMR素子の抵抗変化
を示す図である。
■、11・・・磁気抵抗効果素子、2・・・バイアス導
体又は永久磁石、3・・・絶縁層、4・・・基板、5.
6・・・シールド磁性体、7・・・記録媒体、8・・・
電流端子、11a・・・トラックに対向する部分、11
b・・・トラックに対向しない部分。
特許出願人
富士通株式会社
特許出願代理人
弁理士 青 木 朗
弁理士 西舘和之
弁理士 内 1)幸 男
弁理士 山 口 昭 之
率3図
11′休
第40
素子幅w(Pm)
第5図
特開昭59−IG8917 (4)
郊6回
晃7面FIG. 1 is a schematic cross-sectional view of a magnetic @resistance effect type magnetic head for explaining the prior art, and FIG. 2 is a schematic perspective view of the magnetoresistive element (MR multilayer element) used in FIG. Figure 3 is a graph showing the resistivity change of the wind element, and Figure 4 shows the result of numerical analysis of the relationship between H- of the MR film and kite element width W. 5 is a schematic plan view showing an embodiment of the magnetoresistive magnetic head according to the present invention, and FIG. 6 shows a current path of the kite element in the portion facing the track according to the present invention. This is a schematic diagram, and FIG. 7 is a diagram showing resistance changes of an MR element in an embodiment according to the present invention. 2. 11... Magnetoresistive element, 2... Bias conductor or permanent magnet, 3... Insulating layer, 4... Substrate, 5.
6... Shield magnetic material, 7... Recording medium, 8...
Current terminal, 11a...portion facing the track, 11
b...The part that does not face the truck. Patent Applicant: Fujitsu Limited Patent Attorney Akira Aoki Patent Attorney Kazuyuki Nishidate 1) Yukio Patent Attorney Akiyuki Yamaguchi 3 Figure 11' Rest 40 Element Width w (Pm) Figure 5 JP-A-59-IG8917 (4) Subaru 6th edition, page 7
Claims (1)
続用導体層とを具備する磁気抵抗効果型磁気ヘッドにお
いて、 該強磁性薄膜の長さが該ヘッドのトラック幅よシも大き
く、1つ該トラックに対向する該強磁性薄膜の部分の幅
を、トラック幅以外の部分の幅よりも大きくなるように
したことを特徴とする磁気抵抗効果型磁気ヘッド。[Claims] 1. In a magnetoresistive magnetic head comprising a ferromagnetic thin film formed via an insulating film on a substrate and a connecting conductor layer, the length of the ferromagnetic thin film is the length of the head. A magnetoresistive magnetic head characterized in that the track width is also large, and the width of a portion of the ferromagnetic thin film facing one track is larger than the width of a portion other than the track width.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4320183A JPS59168917A (en) | 1983-03-17 | 1983-03-17 | Magneto-resistance effect type magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4320183A JPS59168917A (en) | 1983-03-17 | 1983-03-17 | Magneto-resistance effect type magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59168917A true JPS59168917A (en) | 1984-09-22 |
Family
ID=12657312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4320183A Pending JPS59168917A (en) | 1983-03-17 | 1983-03-17 | Magneto-resistance effect type magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59168917A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6332714A (en) * | 1986-07-28 | 1988-02-12 | Victor Co Of Japan Ltd | Magneto-resistance head |
-
1983
- 1983-03-17 JP JP4320183A patent/JPS59168917A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6332714A (en) * | 1986-07-28 | 1988-02-12 | Victor Co Of Japan Ltd | Magneto-resistance head |
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