JPS59201345A - Camera tube - Google Patents
Camera tubeInfo
- Publication number
- JPS59201345A JPS59201345A JP7579083A JP7579083A JPS59201345A JP S59201345 A JPS59201345 A JP S59201345A JP 7579083 A JP7579083 A JP 7579083A JP 7579083 A JP7579083 A JP 7579083A JP S59201345 A JPS59201345 A JP S59201345A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- deflection
- acceleration
- electron gun
- cylindrical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
- H01J29/48—Electron guns
- H01J29/488—Schematic arrangements of the electrodes for beam forming; Place and form of the elecrodes
Landscapes
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、デフレフトロン型偏向電極を備えた電磁集束
静電偏向型の撮像管に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an electromagnetic focusing electrostatic deflection type image pickup tube equipped with a defleftron type deflection electrode.
従来例の構成とその問題点
一般に、デフレフトロン型偏向電極を備えた電磁集束静
電偏向型の撮像管は第1図に示すように電極構成され、
陰極1から放射された熱電子は制御電極2の細孔および
加速電極3の電子ビーム径制限用孔4を通じて引き出さ
れ、図外の集束コイルによる集束作用およびデフレクト
ロン型偏向電極6による偏向作用を受けて実線矢印で示
すような経路で進行する。そして、メツシュ電極6を透
過してターゲット電極7の光導電膜8を走査するのであ
るが、ターゲット電極7に射入し得なかった電子ビーム
は、いわゆる戻りビームとして加速電極3側へ戻る。Conventional configurations and their problems In general, an electromagnetic focusing electrostatic deflection type image pickup tube equipped with a defleftron type deflection electrode has an electrode configuration as shown in Fig. 1.
Thermionic electrons emitted from the cathode 1 are extracted through the pores of the control electrode 2 and the electron beam diameter limiting holes 4 of the accelerating electrode 3, and are subjected to a focusing action by a focusing coil (not shown) and a deflection action by a deflectron-type deflection electrode 6. Then proceed along the route shown by the solid arrow. Then, the electron beam passes through the mesh electrode 6 and scans the photoconductive film 8 of the target electrode 7, but the electron beam that could not enter the target electrode 7 returns to the accelerating electrode 3 side as a so-called return beam.
ところで、かかる電磁集束静電偏向型撮像管における戻
りビームは、静電集束電磁偏向型撮像管や電磁集束電磁
偏向型撮像管における戻りビームと異なり、破線矢印で
示すように管軸から離れる方向へ偏倚して加速電極側へ
戻る。そして、かかる戻りビームが加速電極等の電子銃
電極やその周囲の電極支持溝体9に射突するといわゆる
反射ビームを生じ、こ詐は一点鎖線で示すような経路を
とってターゲット電極7側へ向う。By the way, the return beam in such an electromagnetic focusing electrostatic deflection type image pickup tube differs from the return beam in an electrostatic focusing electromagnetic deflection type image pickup tube or an electromagnetic focusing electromagnetic deflection type image pickup tube, in that the return beam is directed away from the tube axis as shown by the dashed arrow. It is deflected and returns to the accelerating electrode side. When this return beam hits an electron gun electrode such as an accelerating electrode or the electrode support groove 9 surrounding it, a so-called reflected beam is generated, and this beam takes a path as shown by the dashed line and travels to the target electrode 7 side. Head over.
前記反射ビームは低エネルギで、しかもある程3べ一゛
度散乱しているので、これがたとえ光導電膜8の走査領
域に射入しても、入側光が、ハイライ1−でないかぎり
出力信号電流に悪影響することはない。Since the reflected beam has low energy and is scattered by 3 degrees to some extent, even if it is incident on the scanning area of the photoconductive film 8, the output signal will not be generated unless the incident light is Highlight 1-. It has no negative effect on current.
しかし、との反則ビームが光導電膜8の周囲領域たる非
走査領域に入射すると、これによる擬似信号が出力信号
電流に混入する。この理由は、光導電、膜8の中火矩形
状走査領域における裏面電位が、透明導電膜10に印加
されるターゲット電圧(通常20〜50V )よりも低
くなるのに対し、前記非走査領域における裏面電位はタ
ーゲット電圧に近く、シたがって低エネルギの反射ビー
ムといえども容易にランディングするからである。However, when the reflected beam enters the non-scanning area that is the peripheral area of the photoconductive film 8, a false signal due to this is mixed into the output signal current. The reason for this is that the back surface potential in the medium rectangular scanning region of the photoconductive film 8 is lower than the target voltage (usually 20 to 50 V) applied to the transparent conductive film 10, whereas in the non-scanning region This is because the back surface potential is close to the target voltage, so even a low-energy reflected beam will easily land.
前述のような擬似信号の発生を防ぐために、従来、電子
銃電極を径小化し、反射ビームのほとんどすべてが走査
領域内に戻るようにしたり、透明導電膜10′!!、た
けメツシュ電極6をトリミングしてこれらの電極を走査
領域内にのみ設けたりする方法が採られている。しかし
、トリミングによるものでは、電極およびその組立に極
めて高い精度が必要となり量産に適さなくなる。また、
電子銃電極を径小化すると電子銃の機械的強度が低下す
るのみならず、とくに制御電極が高温となり熱膨張によ
る変形を生じやすくなる。1だ陰(至を小形化すると、
十分な大きさのビーム電流を得ることができなくなる。In order to prevent the generation of the above-mentioned spurious signals, the diameter of the electron gun electrode is conventionally reduced so that almost all of the reflected beam returns within the scanning area, or the transparent conductive film 10'! ! , a method has been adopted in which the bamboo mesh electrodes 6 are trimmed and these electrodes are provided only within the scanning area. However, trimming requires extremely high precision in electrodes and their assembly, making them unsuitable for mass production. Also,
Reducing the diameter of the electron gun electrode not only reduces the mechanical strength of the electron gun, but also causes the control electrode in particular to become hot and easily deform due to thermal expansion. 1 da yin (if you miniaturize solstice,
It becomes impossible to obtain a beam current of sufficient magnitude.
加速電極電位が高い場合にも擬似信号を発生することが
ある。これは戻りビームが加速電極側へ引き寄せられて
加速電極の側壁付近からターゲット電極へ向う反則ビー
ムが生じるからである。この場合、偏向電極電位を]−
げるか加速電極電位を下げ肛ばよいのであるが、前者で
は集束と偏向とに要する電力が増し、後者ではビーム電
流が小さくなる。A false signal may also be generated when the accelerating electrode potential is high. This is because the return beam is attracted toward the accelerating electrode, and a counter beam is generated that heads toward the target electrode from near the side wall of the accelerating electrode. In this case, the deflection electrode potential is ]−
It would be better to reduce the accelerating electrode potential, but in the former case the power required for focusing and deflection increases, and in the latter case the beam current becomes smaller.
発明の目的
本発明の目的とするととろけ、電子銃電極の径小化や厳
格なトリミングを要することなく反則ビームによる擬似
信号の発生を防Iにでき、しかも加速電極電位を偏向電
極電位よりも高く設定しつる撮像管を提供することにあ
る。Purpose of the Invention The purpose of the present invention is to prevent the generation of false signals due to a foul beam without reducing the diameter of the electron gun electrode or to perform strict trimming, and to make the acceleration electrode potential higher than the deflection electrode potential. Our goal is to provide an image pickup tube that can be set up.
発明の構成
5べ一゛
本発明の撮像管においては、加速電極電位よりも低い電
位に保持されて加速電極の筒状部を包囲しかつ偏向電極
の一部分に向き合う筒状シールド電極ラミ子銃に付加す
るのであり、これを以下図面に示した実施例とともに詳
しく説明する。Structure 5 of the Invention In the image pickup tube of the present invention, a cylindrical shield electrode laminated gun is held at a potential lower than the accelerating electrode potential, surrounds the cylindrical part of the accelerating electrode, and faces a part of the deflection electrode. This will be explained in detail below together with the embodiments shown in the drawings.
実施例の説明
本発明を実施した撮像管の要部を示す第2図において、
ガラスパルプ11内に封入されている電子銃は陰極1、
制御電極2および加速電極3からなる従来の電極構成に
加えて筒状シールド電極12を有している。ガラスパル
プ11の内周面には膜状のデフレフトロン型偏向電極5
が付設されており、加速電極3の前方には図示を省略し
たが従来と同様のメツシュ電極およびターゲット電極が
配置されている。DESCRIPTION OF EMBODIMENTS In FIG. 2 showing the main parts of an image pickup tube in which the present invention is implemented,
The electron gun enclosed in the glass pulp 11 has a cathode 1,
In addition to the conventional electrode configuration consisting of a control electrode 2 and an acceleration electrode 3, a cylindrical shield electrode 12 is included. A film-like defleftron type deflection electrode 5 is provided on the inner peripheral surface of the glass pulp 11.
In front of the accelerating electrode 3, although not shown, a mesh electrode and a target electrode similar to conventional ones are arranged.
筒状シールド電極12は加速電極3と同様に非磁性ステ
ンレス鋼またはニッケル・銅合金等がらなり、第3図に
示すようにフランジ部12ai有している。そして、フ
ランジ部122Lにおいて電極支持構体9に絶縁支持さ
れており、加速電極3の筒状部3aの大部分を同軸的に
包囲し、偏向型(屓5の一部分に向き合っている。また
、シールド電極12の端子は加速電極3の端子と無関係
に管外に引き出されているか、制御電極2脣たけ陰極1
に管内で接続されている。Like the accelerating electrode 3, the cylindrical shield electrode 12 is made of non-magnetic stainless steel or a nickel-copper alloy, and has a flange portion 12ai as shown in FIG. The flange portion 122L is insulated and supported by the electrode support structure 9, and coaxially surrounds most of the cylindrical portion 3a of the accelerating electrode 3. Either the terminal of the electrode 12 is drawn out of the tube regardless of the terminal of the accelerating electrode 3, or
is connected within the pipe.
かかる撮像管の作動にさいしては、たとえば加速電極3
に約200V、偏向電極5に約150V(平均値)、シ
ールド電極12に約10Vの電位が!j−えられるので
あり、加速電極電位は偏向電極の平均電位よりも高い。In operation of such an image pickup tube, for example, the accelerating electrode 3
There is a potential of about 200V on the deflection electrode 5, about 150V (average value) on the deflection electrode 5, and about 10V on the shield electrode 12! j- is obtained, and the acceleration electrode potential is higher than the average potential of the deflection electrode.
一方、シールド電極12と偏向電極6との相互対向部に
は、内側に比して外側で高い電位分布の電界が生じるの
で、加速電極3の周縁部付近に向って進行してきた戻り
ビーム132Lは外方へ曲げられてし捷い、その反則ビ
ームがグーゲット電極[11+へ向うことがなくなる。On the other hand, in the mutually opposing portion of the shield electrode 12 and the deflection electrode 6, an electric field with a higher potential distribution is generated on the outside than on the inside, so that the return beam 132L that has progressed toward the vicinity of the peripheral edge of the accelerating electrode 3 is It is deflected outward and the offending beam is no longer directed towards the googet electrode [11+].
また、加速電極3の筒状部3aに創案した戻りビーム1
3bによる反射ビーム14b[ターゲット電極側へ向う
ものの、それは光導電膜の中央矩形状走査領域に射入す
るので、実用」−の支障はほとんどない。In addition, the return beam 1 designed in the cylindrical part 3a of the accelerating electrode 3 is
Although the reflected beam 14b by 3b is directed toward the target electrode, it is incident on the central rectangular scanning area of the photoconductive film, so there is almost no problem in practical use.
7・ ′
したがって筒状シールド電極12の筒状部外径は、それ
よりも内側の部分で反射した電子ビームがターゲラ1−
電極の走査領域内に戻りつる大きさに選ば扛なければな
らない。シールド電極電位は加速電極電位よりも低く、
○〜約120V好ましくは約30V以下の範囲から選択
できるが、負電位であってもよい。シールド電極12は
第4図に示すような漏斗状−!たは第5図に示すような
ホーン状であってもよく、また、フランジ部を有しない
円筒状等であってもよい。7.' Therefore, the outer diameter of the cylindrical part of the cylindrical shield electrode 12 is such that the electron beam reflected from the inner part of the outer diameter of the cylindrical shield electrode 12 is
It must be sized so that it falls within the scanning area of the electrode. The shield electrode potential is lower than the accelerating electrode potential,
It can be selected from a range of ○ to about 120 V, preferably about 30 V or less, but a negative potential may also be used. The shield electrode 12 has a funnel shape as shown in FIG. Alternatively, it may have a horn shape as shown in FIG. 5, or it may have a cylindrical shape without a flange.
さらに、メツシュ電極をトリミングしてもよい。Additionally, the mesh electrode may be trimmed.
ただし、前述のように外方へ大きく偏倚した反則ビーム
や電極支持溝体からの反射ビームがターゲラ1−電極へ
再入射するのを妨げ得る枠状の縁どりであればよく、従
来のように走査領域に正確に対応した大きさの部面を残
してその周囲を縁どり1〜マスクする必要はない。つま
り、走査領域に対応した大きさの面積よりもいくぶん大
きい部面を残してその周囲をマスクす扛ばよいのである
から、これによりメツシュ電極や電極の組立にとくに高
い精度が要求されるということはなく、実用的な通常の
精度で十分である。However, as mentioned above, it is sufficient to have a frame-shaped border that can prevent the reflected beam from the electrode supporting groove and the repulsed beam that is largely deflected outward from re-entering the target electrode 1. There is no need to leave a part of a size that exactly corresponds to the area and frame the area around it to mask it. In other words, all you have to do is leave a part slightly larger than the area corresponding to the scanning area and mask the surrounding area, which means that a particularly high precision is required in the mesh electrode and electrode assembly. For practical purposes, ordinary precision is sufficient.
発明の効果
本発明の撮像管は前述のように(黄成されるので、電子
銃電極を径小化することなく反則ビームによる擬似信号
の発生を防1にすることができる。才だ、加速電極電位
を比較的高い値に設定して十分大きいビーム電流を通じ
ることができる。さらに、メツシュ電極等にトリミング
を要せず、1−リミングを行なう場合でも電極およびそ
の組立に特別高い精度が要求されず、容易に実施できる
という利点がある。Effects of the Invention As mentioned above, since the image pickup tube of the present invention is yellowed, it is possible to prevent the generation of spurious signals due to a foul beam without reducing the diameter of the electron gun electrode. A sufficiently large beam current can be passed by setting the electrode potential to a relatively high value.Furthermore, there is no need to trim the mesh electrode, and even when performing 1-rimming, a particularly high precision is required for the electrode and its assembly. It has the advantage of being easy to implement.
第1図は従来の撮像管の電極(精成と電子ビーム経路と
の関係を示す断面図、第2図は本発明を実施した撮像管
の要部の断面図、第3図は同撮像管の筒状シールド電極
の一部破断斜視図、第4図および第6図はそれぞれ本発
明の他の実施例の筒状シールド電極の一部破断斜視図で
ある。
3・・・・・・加速′電極、5・・・・・偏向電極、1
1・・・・・・ガラスパルプ、12・・・・・・シール
ド電極代理人の氏名 弁理士 中 尾 敏 男 ほか′
1名第1図
0
第4図
第5図Figure 1 is a sectional view showing the relationship between the electrodes (refining and electron beam path) of a conventional image pickup tube, Figure 2 is a sectional view of the main parts of an image pickup tube in which the present invention is implemented, and Figure 3 is a sectional view of the same image pickup tube. FIG. 4 and FIG. 6 are partially cutaway perspective views of the cylindrical shield electrode of other embodiments of the present invention, respectively. 3... Acceleration 'Electrode, 5... Deflection electrode, 1
1...Glass pulp, 12...Name of shield electrode representative Patent attorney Toshio Nakao et al.'
1 person Figure 1 Figure 0 Figure 4 Figure 5
Claims (1)
ヌバルプ内に封入された電子銃の加速電極が、電子ビー
ム径制限用孔を通じた電子ビームを通過させる筒状部を
有してなる電磁集束静電偏向型撮像管において、前記加
速電極の電位よりも低い電位に保持され、前記筒状部を
包囲して前記偏向電極の一部分に向き合う筒状シールド
電FMを前記電子銃に付加してなることを特徴とする撮
像管。The accelerating electrode of the electron gun, which is enclosed in a galanu bulb with a defreftron-type deflection electrode attached to the inner circumferential surface, is an electromagnetic focusing station having a cylindrical part through which the electron beam passes through a hole for limiting the diameter of the electron beam. In the electric deflection type image pickup tube, a cylindrical shield electric field FM that is held at a potential lower than that of the accelerating electrode, surrounds the cylindrical part, and faces a part of the deflection electrode is added to the electron gun. An imaging tube featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7579083A JPS59201345A (en) | 1983-04-28 | 1983-04-28 | Camera tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7579083A JPS59201345A (en) | 1983-04-28 | 1983-04-28 | Camera tube |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59201345A true JPS59201345A (en) | 1984-11-14 |
Family
ID=13586358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7579083A Pending JPS59201345A (en) | 1983-04-28 | 1983-04-28 | Camera tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59201345A (en) |
-
1983
- 1983-04-28 JP JP7579083A patent/JPS59201345A/en active Pending
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