JPS5923558A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5923558A
JPS5923558A JP57131951A JP13195182A JPS5923558A JP S5923558 A JPS5923558 A JP S5923558A JP 57131951 A JP57131951 A JP 57131951A JP 13195182 A JP13195182 A JP 13195182A JP S5923558 A JPS5923558 A JP S5923558A
Authority
JP
Japan
Prior art keywords
circuit
power
power supply
block
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57131951A
Other languages
Japanese (ja)
Inventor
Toyohiko Hongo
本郷 豊彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57131951A priority Critical patent/JPS5923558A/en
Publication of JPS5923558A publication Critical patent/JPS5923558A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent the influence of variations in a power source to be affected to other block such as a logic unit by individually connecting a circuit block and a power pad on the same semiconductor chip, supplying power from individual power sources, and isolating the wells formed in every block. CONSTITUTION:Aluminum wirings La, Lb, Lc,... are connected from a power pad 1 to circuit blocks 2a, 2b, 2c,... and power voltage is applied to the wells 3a, 3b, 3c,.... The wirings La, Lb, Lc are respectively connected to the common lines 1a, 1b, 1c of the source electrodes of an FET in each block. Thus, when the voltage of the power source varies in the well 3b due to the operation of the logic unit 2b, the variation in the power source is transmitted to other blocks from Lb via the pad 1 and the other La, Lb, the influence is hardly affected, thereby improving the reliability of the circuit.

Description

【発明の詳細な説明】 この発明は、半導体集積回路に関し、特に集積回路内の
ロジック部等の電源変動によって他の回路が影響を受け
ないようにしたものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor integrated circuit, and particularly to a semiconductor integrated circuit that prevents other circuits from being affected by power fluctuations in a logic section or the like within the integrated circuit.

従来、時計用のICなどの半導体集積回路においては、
第1図(A)に示すように、電源パッド1に接続された
共通の電源2インLから1発振回路2aやロジック部2
bあるいはA/D変換回路のようなアナログ回路2c等
の複数個の回路ブロックに対して電源電圧が供給される
ようにされたシ、第1図(B)のごとく、一旦ロシック
部2bに入り、ここから出た電源ラインL′に他の回路
ブロックが接続されるなど、電源が一本のラインから供
給されるようにされていた。
Conventionally, in semiconductor integrated circuits such as ICs for watches,
As shown in FIG. 1(A), one oscillation circuit 2a and a logic part 2 are connected to a common power supply 2in L connected to a power supply pad 1.
When the power supply voltage is supplied to multiple circuit blocks such as b or analog circuits 2c such as A/D converter circuits, as shown in FIG. , other circuit blocks were connected to the power supply line L' coming out from here, so that power was supplied from one line.

そのため、従来の半導体集積回路においては、ロジック
部2bにおける論理動作に伴ってロジック部2b内に流
される電流が変化して、電源電圧が変動されると、他の
回路の電源電圧もその影響を受けて変動されてしまい、
例えば11発振回路における発振が停止した。9.A/
D変換回路のようなアナログ回路における精度が低下す
る等のおそれがあった。
Therefore, in conventional semiconductor integrated circuits, when the current flowing in the logic section 2b changes with the logic operation in the logic section 2b and the power supply voltage fluctuates, the power supply voltages of other circuits are also affected by the change. It has changed due to the reception,
For example, oscillation in the 11 oscillation circuit stopped. 9. A/
There was a fear that the accuracy in analog circuits such as D conversion circuits would be reduced.

特に、コンプリメンタリviO8F′FJTからなるC
MOS I Cにおいては、一般に、Pチャンネル形M
O8FETはN形半導体基板上に直接形成され、Nチャ
ンネル形MO8FETはN形半導体基板上に形成された
Pウェル領域に形成されるが、従来のCMOS I C
においては1発振回路2aやロジック部2bさらにアナ
ログ回路2C等の回路のつ、?ル領域が共通にされてい
た。つまり、従来は各回路ブロックのウェル領域が連続
的に形成され、互いにつながっていた。そして、その基
板が接地電位に接続され、ウェル領域には電源ラインL
が接続されて、電源電圧が供給されるようにされていた
In particular, C consisting of complementary viO8F'FJT
In MOS IC, generally P channel type M
The O8FET is formed directly on the N-type semiconductor substrate, and the N-channel MO8FET is formed in the P-well region formed on the N-type semiconductor substrate, whereas conventional CMOS IC
In this case, one of the circuits such as the oscillation circuit 2a, the logic section 2b, and the analog circuit 2C? area was shared. That is, conventionally, the well regions of each circuit block were formed continuously and connected to each other. The substrate is connected to ground potential, and the well region has a power line L.
was connected to supply power supply voltage.

そのため、上記ロジック部2bで内部の素子にかなシ大
きな電流が流されると、ウェル領域にも電流が流れてつ
Iルの電源電圧が変動し、それがウェル領域を共通にし
ている他の回路ブロックに直接影響を与えていた。
Therefore, when a large current flows through the internal elements in the logic section 2b, the current also flows in the well region, causing the power supply voltage of the circuit to fluctuate, which causes other circuits that share the well region to It had a direct impact on Block.

そこで、この発明は、同一半導体チップ上に形成されて
いる複数個の回路ブロックの各々と電源パッドとを、別
々の配線にょづて結び、それぞれ別個の電源ラインから
電源を供給させ、かつ半導体チップ上に形成されるウェ
ル領域を各回路ブロックごとに分離させることによって
、ロジック部等における電源変動の影響が他の回路ブロ
ックに及ばないようにさせることを目的とする。
Accordingly, the present invention connects each of a plurality of circuit blocks formed on the same semiconductor chip and a power supply pad by separate wiring lines, and supplies power from separate power lines to the semiconductor chip. By separating the well region formed above into each circuit block, the purpose is to prevent the influence of power supply fluctuations in the logic section etc. from reaching other circuit blocks.

以下図面に基づいてこの発明を説明する。The present invention will be explained below based on the drawings.

第2図は本発明の一実施例を示すもので、半導体チップ
上における各回路ブロックおよび配線のパターンの概略
を示す。
FIG. 2 shows an embodiment of the present invention, and shows an outline of each circuit block and wiring pattern on a semiconductor chip.

この実施例では、電源ビンから電源電圧が供給される電
源パッド1と、各回路ブロック2 a 、2b+2 c
 +・・・・・・とを結ぶ電源ラインが、それぞれ別個
のアルミニウム配線La、Lb、Lc、・・・・・・に
よって形成されている。また、各回路ブロック2 a 
+2 b * 2 c * ・””・のウェル領域3a
+3b+3c。
In this embodiment, a power supply pad 1 to which a power supply voltage is supplied from a power supply bin, and each circuit block 2a, 2b+2c
+, . . . are formed by separate aluminum wirings La, Lb, Lc, . In addition, each circuit block 2a
Well region 3a of +2 b * 2 c * ・””・
+3b+3c.

・・・・・・は、半導体チップ上に互いに分離して形成
されている。
. . . are formed separately from each other on the semiconductor chip.

そして、上記各配線La * Lb + Lc +・・
・・・・は、それぞれ各回路ブロック2 a + 2 
b + 2 c +・・・・・・のウェル領域3a +
 3 b + 3 c +・・・・・・に接続され。
And each of the above wirings La * Lb + Lc +...
... is each circuit block 2 a + 2
Well region 3a + of b + 2 c +...
Connected to 3 b + 3 c +...

各ウェル領域3a r 3 b + 3 c +・・・
・・・には電源電圧が印加されるようにされている。ま
た5各配線L a + L b + L c +・・・
・・・は、各回路ブロック2a。
Each well region 3a r 3 b + 3 c +...
... is applied with a power supply voltage. In addition, each of the 5 wirings L a + L b + L c +...
. . . represents each circuit block 2a.

2b、2c、・・・・・・内部のMOSFETのソース
電極が共通に接続されている内部電源ラインーea。
2b, 2c, . . . Internal power supply line-ea to which the source electrodes of internal MOSFETs are commonly connected.

−gb 、−gc l・・・・・・にそれぞれ接続され
ている。
-gb, -gcl..., respectively.

なお、上記ウェル領域は各回路ブロックごとにだけでな
く、各素子とと忙分離するようにしてもよい。
Note that the well region may be separated not only from each circuit block but also from each element.

このように、上記実施例においては、各回路ブロックご
とに電源ラインが電源パッドの幹から分離して引き出さ
れ、しかも、ウェル領域が回路ブロックごとに分離、形
成されている。
As described above, in the above embodiment, the power supply line is drawn out separately from the trunk of the power supply pad for each circuit block, and the well region is separated and formed for each circuit block.

そのため、例えば、ロジック部2bの論理動作に伴なっ
て内部素子(0MO8)に流される貫通[流が増減して
、それが原因となってロジック部2bのウェル領域3b
の電源電圧が変動されても、この電源変動はロジック部
2bと電源パッド1とを結ぶ配線(電源ライン)Lbが
ら電源パッド1を経由して、更に他の配線(電源ライン
゛)La。
Therefore, for example, the through flow flowing to the internal element (0MO8) increases or decreases with the logic operation of the logic section 2b, which causes the well region 3b of the logic section 2b to
Even if the power supply voltage fluctuates, this power supply fluctuation will be caused by the wiring (power line) Lb connecting the logic section 2b and the power supply pad 1, through the power supply pad 1, and then to another wiring (power line) La.

Lc、・・・・・・を通って他の回路ブロック2a・2
cν・・・・・・に伝わることになる。
Lc,... through other circuit blocks 2a, 2
It will be transmitted to cν...

従って、ウェル領域が各回路ブロック間で共通にされて
いる場合、あるいはウェル領域が分離されていても電源
ラインが共通にされて電源パッドから引き出された一本
の配線に各ウェル領域が接続されている場合には、ロジ
ック部での電源変動の影響が共通のウェル領域を介して
直接他の回路に及び、あるいは共通の電源ラインを介し
て隣接する回路ブロックに及び易いのに比べて、本実施
例では、一つの回路ブロックにおける電源1u圧の変動
の影響が他の回路ブロックに極めて及びにくくされるよ
うになる。
Therefore, if the well area is shared between each circuit block, or even if the well areas are separated, the power line is shared and each well area is connected to a single wire drawn out from the power pad. In this case, the influence of power supply fluctuations in the logic section is more likely to directly affect other circuits via the common well region or to adjacent circuit blocks via the common power supply line. In the embodiment, the influence of fluctuations in the power supply 1u voltage in one circuit block is made extremely difficult to affect other circuit blocks.

以上説明したようにこの発明は、同一の半導体チップ上
に形成された発振回路、ロジック部、アナログ回路等の
複数個の回路ブロックと電源パッドとを各々別個の配線
によって接続して各回路ブロックが別個の電源ラインか
ら電源の供給を受けるようKするとともに、各回路ブロ
ックのウェル領域を少なくとも回路ブロックごとに分離
形成するようにしたので、ロジック部等における電源変
動の影響が他の回路ブロックに極めて及びにくくされる
。また、これによって、ロジック部等の電源変動により
発振回路が停止されたシ、アナログ回路の精度が低下さ
れたシするおそれがなくkす、回路の信頼性が向上され
るという効果がある。
As explained above, the present invention connects a plurality of circuit blocks formed on the same semiconductor chip, such as an oscillation circuit, a logic section, and an analog circuit, to a power supply pad using separate wiring, so that each circuit block is In addition to receiving power from a separate power supply line, the well region of each circuit block is formed separately for each circuit block at least, so that the influence of power supply fluctuations in the logic section etc. is extremely severe on other circuit blocks. and be made difficult. Furthermore, this eliminates the risk of the oscillation circuit being stopped or the precision of the analog circuit being degraded due to power fluctuations in the logic section, etc., thereby improving the reliability of the circuit.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の半導体集積回路における電源ラインの配
線の仕方を示すブロック図、 第2図は本発明に係る半導体集積回路における電源ライ
ンの配線パターンの一例を示す概略説明図である。 1・・・電源パッド、2 a * 2 b * 2 c
 *・・・・・・回路ブロック、3a13b13el・
・・・・・ウェル領域、La、Lb、Lc+・・・・・
・配線(電源ライン)。 代理人 弁理士  薄 1)利 幸” 、、;、it第
  1  図 とA) (B) /
FIG. 1 is a block diagram showing how power lines are wired in a conventional semiconductor integrated circuit, and FIG. 2 is a schematic explanatory diagram showing an example of a power line wiring pattern in a semiconductor integrated circuit according to the present invention. 1...Power pad, 2 a * 2 b * 2 c
*・・・Circuit block, 3a13b13el・
...Well region, La, Lb, Lc+...
・Wiring (power line). Agent Patent Attorney Susuki 1) Toshiyuki” ,;, it Figure 1 and A) (B) /

Claims (1)

【特許請求の範囲】[Claims] 同一の半導体チップ上に複数個の回路ブロックが形成さ
れてなる半導体集積回路において、上記各回路ブロック
と電源パッドとが各々別個の配線によって接続され、各
回路ブロックが別々の電源ラインから電源の供給を受け
るようにされ、かつ上記各回路ブロックのウェル領域が
少なくとも回路ブロックごとに分離形成されていること
を特徴とする半導体集積回路。
In a semiconductor integrated circuit in which a plurality of circuit blocks are formed on the same semiconductor chip, each of the circuit blocks and power supply pads are connected by separate wiring, and each circuit block is supplied with power from a separate power supply line. 1. A semiconductor integrated circuit, wherein the well region of each circuit block is formed separately for at least each circuit block.
JP57131951A 1982-07-30 1982-07-30 Semiconductor integrated circuit Pending JPS5923558A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57131951A JPS5923558A (en) 1982-07-30 1982-07-30 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57131951A JPS5923558A (en) 1982-07-30 1982-07-30 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5923558A true JPS5923558A (en) 1984-02-07

Family

ID=15070017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57131951A Pending JPS5923558A (en) 1982-07-30 1982-07-30 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5923558A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0453255A (en) * 1990-06-21 1992-02-20 Toshiba Corp Semiconductor integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0453255A (en) * 1990-06-21 1992-02-20 Toshiba Corp Semiconductor integrated circuit

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