JPS5925418A - Semiconductor switch circuit - Google Patents

Semiconductor switch circuit

Info

Publication number
JPS5925418A
JPS5925418A JP13530182A JP13530182A JPS5925418A JP S5925418 A JPS5925418 A JP S5925418A JP 13530182 A JP13530182 A JP 13530182A JP 13530182 A JP13530182 A JP 13530182A JP S5925418 A JPS5925418 A JP S5925418A
Authority
JP
Japan
Prior art keywords
circuit
switch
auxiliary
current
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13530182A
Other languages
Japanese (ja)
Inventor
Katsuyuki Nakayama
勝之 中山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13530182A priority Critical patent/JPS5925418A/en
Publication of JPS5925418A publication Critical patent/JPS5925418A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/725Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for AC voltages or currents

Landscapes

  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To decrease the power consumption of a control circuit without using an auxiliary bilateral npnpn switch, by using an MOSFET which works with a combination of auxiliary MOSFET switches at a Xerox ignition function part. CONSTITUTION:A main siwtch circuit is provided with an AC power supply 1, a load impedance 2 and a bilateral npnpn (TRIAC)3. Then the T2 and G electrodes 3-1 and 3-3 of the TRIAC3 are connected to a zero-cross trigger signal generating circuit 4'. Four enhancement type MOSFET13-16 are used to the circuit 4', and a control circuit consisting of a resistance 11, a DC power supply 10 and a switch 12 is connected to the circuit 4'. The FET13 and 14 are used as auxiliary switches of the TRIAC3, and the FET15 and 16 are actuated by a combination of these auxiliary switches. A trigger signal is supplied to the TRIAC3 at the level near 0V of the power supply 1. Thus the power consumption is decreased for the control circuit.

Description

【発明の詳細な説明】 本発明は制御電極付き双方向性N 1.’ N P N
スイッチ(以下’I’ll、 l ACという)を用い
た変流スイッチに関t/%特に制御信号により変流電圧
のゼロボルト・クロス点でトリガするゼロクロス変流ス
イッチに関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a bidirectional N1. ' N P N
The present invention relates to a current transformation switch using a switch (hereinafter referred to as 'I'll, l AC). In particular, it relates to a zero-cross current transformation switch that is triggered at the zero volt cross point of a current transformation voltage by a control signal.

従来のこの種の回路は、負荷全制御する主1” IL 
−I−ACのゲート電極とT2電極間に、ゲート電流を
供給する、補助用のT几IAC’i接続し、この補助1
゛l(・IACi点弧させるトリガ信号を、主I!+、
IΔCの再端子電圧を検出することによって交流電源電
圧のゼロクロス近辺でのみ供給するように構成されてい
た。従って、制御回路の電源としては補助1’lt、J
ΔCのゲート感度(数m A )以上の直流電流を流し
得る容置のものが必要であり、このため主T几I A、
Cを導通させるための制御回路の電力損失が多かった。
Conventional circuits of this type have a main 1” IL that controls the entire load.
- An auxiliary T-IAC'i is connected between the gate electrode of the I-AC and the T2 electrode, and this auxiliary 1
゛l(・The trigger signal to fire IACi is the main I!+,
By detecting the re-terminal voltage of IΔC, the voltage is supplied only near the zero cross of the AC power supply voltage. Therefore, as a power source for the control circuit, the auxiliary 1'lt, J
A container capable of passing a DC current higher than the gate sensitivity of ΔC (several mA) is required.
There was a lot of power loss in the control circuit for making C conductive.

さらに非導通時に於いても主’11?、I八〇の両端正
、圧の検出回路にtま検出電流が常時負荷を介して流れ
てしまい、さらに電力損失を大きくするという欠点もあ
った。以下、第1図に示す従来回路の動作を詳しく説明
する。図に於いて1は交流用、源、2は欧荷インピーダ
ンス、3は導通することにより負荷2に電力を供給する
主T几[ACで、3−1.3−2および3−3はそれぞ
れ該′111もIACの11 、 、 IJI 1およ
び()雷、極である。4は交流電源′i1T、 1.、
−、l:、のゼロクロス近傍でのみ主’I’ll、IA
C3にトリガ信号全供給するゼロクロス・トリガ機能回
路で、補助1’ll、lAC3,I’U’l’6. P
NP トランジスタ76しよび抵抗8.9で構成されて
いる。10は制御回路の直流型1源で、11は補助T几
Iへ〇の点弧軍、流全制限する抵抗である。今、スイッ
チ12が開放状態の場合、補助+11几IACのゲート
およびT1′vl極に電、源10から可、流電圧が印加
されるため、補助T]1.IACへのトリガ信号は供給
されない。
Furthermore, even when there is no conduction, the main '11? , I80 has the disadvantage that a detection current constantly flows through the load in the pressure detection circuit, which further increases power loss. The operation of the conventional circuit shown in FIG. 1 will be explained in detail below. In the figure, 1 is the AC source, 2 is the load impedance, and 3 is the main T-box that supplies power to the load 2 by conducting [AC, 3-1.3-2 and 3-3 are respectively The '111 is also IAC's 11, , IJI 1 and () lightning, pole. 4 is an AC power supply 'i1T; 1. ,
−, l:, the main 'I'll, IA only near the zero crossing of ,
A zero-cross trigger function circuit that supplies all trigger signals to C3, auxiliary 1'll, lAC3, I'U'l'6. P
It consists of an NP transistor 76 and a resistor 8.9. 10 is a direct current source of the control circuit, and 11 is a resistor that limits the ignition force and total flow to the auxiliary T-circuit I. Now, when the switch 12 is in the open state, a current voltage is applied from the source 10 to the gate of the auxiliary +11 IAC and the T1'vl pole, so that the auxiliary T]1. No trigger signal is provided to the IAC.

(jYEッ’1r主Tl′LLACId阻止状態にあf
) 、 IJI 、 、 fIj2の両端には交流電源
1の雷1圧がブロックされている。このため、電圧検出
回路を構成している2つの抵抗8.9とトランジスタ7
のエミ、yり・ベースおよびP TJ T 6のアノー
ドゲートには、そり、それ電源電圧が抵抗分割された検
出雷、流が負荷インピーダンス2全介して常に流れてい
る。
(jYE'1r main Tl'LLACId is in blocking state)
), IJI, and fIj2, the lightning voltage of AC power supply 1 is blocked at both ends. Therefore, the two resistors 8.9 and the transistor 7 making up the voltage detection circuit
In the emitter, yoke, base, and anode gate of the P TJ T 6, a current is always flowing through the load impedance 2, which is a detection lightning current in which the power supply voltage is divided by a resistor.

次に、スイッチ12が又流雪、源1の任意の点、例工ば
、主T 11. I AC3(7) ’II’ 2電極
が正(1’lX極が負)の半”す゛イクルの任意の位相
でスイッチ12が閉じfr場合、その点での主TRIA
C3の両端電圧VTI、T2が大きく検出抵抗8の両端
電圧VR8がゼロクロス検出市、川VBn(=V人G)
よ、シ大きいようであればI) N I) l−ランジ
スタ8のコレクタ・エミッタ間は導通状態であシ、直流
′醒圧10からの点弧電流Fi抵抗11を介し1)NP
)ランジスタ8でバイパスされるため補助′1゛几lA
C3は導通しない。以降、この半サイクルの終りに近い
領域、即ぢ几8抵抗の両端電圧VR8がvus=o−v
gnでは前記バイパス用のPNP)ランジスタ8が力、
ト・オフ状態になるため補助’I’11.IACのゲー
トにけ点弧電流が供給される。同様に交流電源1の極性
がゼロ点をクロスし返転してT1電極が正(T2市、極
が負)になる。初共用電圧状態、即ちR8抵抗の両端蟹
、圧vatsがゼロクロス検出電圧VAG(−VRB)
より小さい領域(VR8”0−VA G )では、P 
tJ 1’ 6がカット・オフ状態になっているため補
助′1゛ルIACのゲートへ点弧雷、流が供給される。
Next, the switch 12 can be set to any point on the snowdrift source 1, for example, main T 11. I AC3 (7) 'II' If the switch 12 is closed at any phase of the half-cycle when the two electrodes are positive (1'lX pole is negative), the main TRIA at that point
The voltage across C3, VTI, T2 is large, and the voltage across detection resistor 8, VR8, is zero cross detection city, river VBn (=V person G)
If it seems large, then I) N I) I) The collector and emitter of the transistor 8 are in a conductive state, and the ignition current Fi from the DC priming pressure 10 is passed through the resistor 11 to 1) NP.
) Because it is bypassed by transistor 8, the auxiliary '1゛几lA
C3 is not conductive. Thereafter, in the region near the end of this half cycle, the voltage VR8 across the 8 resistors becomes vus=o-v.
In gn, the bypass PNP) transistor 8 has a power,
Auxiliary 'I'11. An ignition current is supplied to the gate of the IAC. Similarly, the polarity of the AC power source 1 crosses the zero point and reverses, so that the T1 electrode becomes positive (T2, the pole is negative). Initial common voltage state, that is, voltage vats at both ends of R8 resistor is zero cross detection voltage VAG (-VRB)
In the smaller region (VR8”0-VA G ), P
Since tJ 1' 6 is in the cut-off state, the ignition current is supplied to the gate of the auxiliary '1' IAC.

更にスイッチ12が閉になっている間は主TItJ A
(? 3が導通し、 V)xs<Vy+n、 V人G 
となフPNPトランジスタとI’UTは常にカット・オ
フであるため、補助用T几lAC3への点弧電流は継続
して流れる。
Furthermore, while the switch 12 is closed, the main TItJ A
(? 3 is conductive, V)xs<Vy+n, V person G
Since the PNP transistor and I'UT are always cut off, the ignition current to the auxiliary T-AC3 continues to flow.

次に該スイッチが任意の半サイクルの任意の位相で開放
された場合、補助T几1AC5への点弧電流はスイット
12の開放と同時に遮断されるが、主T几lAC3はす
でにその半サイクルの初めのゼロクロス近傍の点弧信号
で導通状態に入っているため、四半ザイクルのPニジに
於いて負荷電流が主’I’11.−IACの保持電流以
下になるまで導通は保持される。以上のような動作をす
ることで任意に開・閉されるスイッチ12によシ主T几
lAC3は又流電源1のゼロクロス点で導通および阻止
状態に入るy流ゼロクロス電力制御が行われる。
If the switch is then opened in any phase of any half-cycle, the ignition current to the auxiliary T-1AC5 will be cut off simultaneously with the opening of the switch 12, but the main T-AC3 will already be open for that half-cycle. Since it enters the conductive state at the ignition signal near the first zero cross, the load current becomes the main 'I'11. -Continuity is maintained until the holding current of the IAC is lowered or lower. By performing the above-described operation, zero-cross power control is performed in which the main AC 3 enters a conducting and blocking state at the zero-cross point of the current power supply 1 by the switch 12 which is opened and closed as desired.

このように、補助用’I”RIACの点弧電流は一般的
に数m A程度であるため制御回路の7(Y、力損失が
大きく、直流電源はこれが許容できる電源である必要が
あるという第1の欠点、寸た、比重状態に於いても、ゼ
ロクロス検出回路には負荷を介して常時検出軍、流が流
れているという第2の欠点、あるいは補助用の1゛几I
ACがdv/dtによる誤点弧をしないよう設計上考慮
する必要がある等の欠点があった。
In this way, since the ignition current of the auxiliary RIAC is generally about several mA, the power loss of the control circuit is large, and the DC power supply must be able to tolerate this. The first drawback is that even in the size and specific gravity state, the zero cross detection circuit always has a current flowing through the load.
There were drawbacks such as the need to take into consideration in the design to prevent AC from erroneously firing due to dv/dt.

本発明の目的は制御回路における電力損失を極力小さく
した変流スイッチを提供することにあり、そのために補
助スイッチとしてMO8型電界効果トランジスタを用い
、さらにゼ日りロス点弧機能部には、前記補助MO8F
E’l’スイッチの組み合せで動作する他のMUS型電
界効果トランジスタを用いたことを特徴とする。
An object of the present invention is to provide a current transformer switch in which the power loss in the control circuit is minimized, and for this purpose, an MO8 type field effect transistor is used as an auxiliary switch, and the day loss ignition function section is equipped with the above-mentioned Auxiliary MO8F
It is characterized by using another MUS type field effect transistor that operates in combination with E'l' switches.

本発明によれば補助Tll、IACを必要としないため
、主′P几IAC制御回路の損失を極度にlド−ffて
き、さらにdv/dtによる誤点弧で主T几工へCが誤
動作することのない又流ゼロクロス電力制御回路が得ら
れる。
According to the present invention, since the auxiliary Tll and IAC are not required, the loss of the main P-coupler IAC control circuit is extremely reduced, and furthermore, due to erroneous firing due to dv/dt, the C to the main T-column malfunctions. A cross-flow zero-cross power control circuit is obtained that does not cause any cross-flow.

以下、図面を参照して本発明の一実施例を説明する。Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

第2図は本発明の一実施例であって、1,2゜3は従来
回路の第1図と同様交流電源と負荷インピーダンスおよ
び主′1゛IもIACを示し、3−1.3−2,3−3
はそれぞれ+ll、 、 T1およびG電極で を示す。4′は変流電源電圧のゼロポルト近鉤み主′1
゛几■ΔC3にトリガ信号を供給するゼロクロス・トリ
ガ(幾能回路で、ここでは4つのエレハンスメント形M
CJS型電界効果トランジスタ13゜14.15,16
”f−例として使用している。また、1(+、11.1
2は従来回路と同様夫々直流′I“1を源と71j流制
限用抵抗および制御用スイッチである。
FIG. 2 shows an embodiment of the present invention, in which 1.2.3 shows the AC power supply and load impedance as in the conventional circuit shown in FIG. 2,3-3
are shown at +ll, , T1 and G electrodes, respectively. 4' is the main hook '1 near zero port of the current power supply voltage.
゛几■ Zero-cross trigger (geometric circuit, here four elemental type M
CJS type field effect transistor 13゜14.15,16
"f- is used as an example. Also, 1(+, 11.1
Reference numeral 2 designates a DC 'I'1 source, a current limiting resistor 71j, and a control switch as in the conventional circuit.

以下、これの動作を詳細に説明する。今スイッヂ12が
開放状態にある時、2つのMO8FE’l’ 13およ
び14のゲート・ソース間には制御電圧V。Sが印加さ
れないため、他の2つのMOSFET  14および1
5のゲート・ソース間のバイアス1ぼ、圧に関係なくド
レイン電流は流れない。従って主’J’[L−IAC3
へはトリガ電、流の供給がないため阻止状態である。次
に、スイッチ12が変流電源1の任意(D点s 例iば
主IILIAc 3のT2vL極カ正(Tl電極が負)
の半サイクルの任意の位相で閉じた場合、その点での主
′V几lAC3のT2 ・0間電圧:VT 2−G(=
VT t ・T 2 )カ大きく、仮[MO8FE’l
’15のゲーI・・ソース間電圧:V□B  とチャネ
ル電圧:Vcbとの関係に於いて、V T 2 a中V
(1s、>Voh  であれば、’ MO81i’ET
  15けスイッチ12が閉じると同時に導通する。こ
の時はM(JSFET13へのゲート・ソース間には制
御電圧が印加されず、ドレイン電流は流れない。従って
TRlAC3ヘトリガ信号の供給はなく導j中しない。
The operation of this will be explained in detail below. Now, when the switch 12 is in the open state, there is a control voltage V between the gate and source of the two MO8FE'l' 13 and 14. Since S is not applied, the other two MOSFETs 14 and 1
5, the drain current does not flow regardless of the voltage between the gate and the source. Therefore, the main 'J' [L-IAC3
Since there is no trigger current or current supplied to the terminal, it is in a blocked state. Next, the switch 12 is activated at any point (D point s) of the current transformer power supply 1 (for example, the T2vL pole of the main IILIAc 3 is positive (the Tl electrode is negative).
When it closes at any phase in the half cycle of , the voltage between T2 and 0 of the main V-AC3 at that point: VT 2-G (=
VT t ・T 2 ) is large, temporary [MO8FE'l
'15 Gate I...In the relationship between source voltage: V□B and channel voltage: Vcb, V in V T 2 a
(If 1s,>Voh, 'MO81i'ET
When the switch 12 is closed, it becomes conductive. At this time, no control voltage is applied between the gate and source of M(JSFET 13), and no drain current flows.Therefore, no trigger signal is supplied to TR1AC3, and the circuit is not conducting.

以降、この半サイクルの終りに近いゼロボルト近傍で、
MoS2”E’l’ 15のゲート・ソース間′電圧V
os7に前記チャネル電圧Vcb との関係に於いてV
T2G* VO2<’1’OIl トナル?[圧領Mテ
iim MO8FET15のドレイン・ソース間は高抵
抗となるため直流電圧10はほとんどそのままMO8F
ET13のゲート・ソース間に印加される。ここで直流
電圧10をM(JSFET 13 オ、1:び14ノチ
ヤ、*ルW、圧V。)。
From then on, near zero volts near the end of this half cycle,
Gate-source voltage V of MoS2"E'l' 15
os7 in relation to the channel voltage Vcb.
T2G* VO2<'1'OIl Tonal? [Pressure area Mteim Because there is a high resistance between the drain and source of MO8FET15, the DC voltage 10 is almost the same as MO8F
It is applied between the gate and source of ET13. Here, the DC voltage is 10 M (JSFET 13 O, 1: and 14 Nochia, *L W, voltage V.).

よ勺充分大きく設定しておけば、T几IAC3のゲート
1に、流はM(JSFEi’l 3のD→SへさらにM
O8FET14のS−+J)へとチャネル電流として供
給され、その結果、導通する。同様に又流電源工の極性
がゼロ点をクロスし返転してTs!極が正(Il13電
極が負)になった初期電圧状態、即ちM(JSF【朝゛
1Gの一ゲート・ソース間電圧Vo、が、同チャネル電
圧V cl、との関係に於いて■T2o中V。5<Vc
llとなる電圧領域では、M(JSFE’l’16のド
レイン・ソース間は高抵抗であるため、′J゛几lAC
3のゲート電流はMO8Ii”l弓T14の1〕→Sへ
さらにM(JSIi’ E’r 13のS→J)へとチ
ャネル電流として供給され、導通する。以後、スイッチ
12が閉になツー乙いる間は1itRIAC3が導通し
、MO8F(!;T15および16のゲート・ソース間
電圧はチャネル′亀圧に対し充分小さい(Vo s<<
 Vc It )ため、同F 、1弓Illのドレイン
・ソース間は高抵抗であ!J直流制餌141(、圧11
まゼロクロス近傍を含めM(JS円(1’ 13および
14のゲート・ソース間に継続してHJ加され、T几l
AC3へは点弧電流が流れる状態が相持される。次に該
スイッチが任意の半サイクルの任意の位相で開放された
場合、 MOSFET 13および14へのゲート・ソ
ース間電圧はスイッチ12の開放と日時に遮断されるが
、 TTLIAC3はすでにその半サイクルの初めのゼ
ロクロス近傍の点弧信号で導通状態に入っているため、
四半°す゛イクルの終り″に於いて負荷間流がT几IA
Cの保持電流以下になシ阻止状態になるまでは導通が保
持される。以上のような動作をすることで、任意に開・
閉されるスイッチ12により、Tit、IAC3は変流
電源1のゼロクロス点で導通および阻止状態に入る交流
ゼロクロス電力制御が行われる。
If you set it large enough, the flow will be M (from D to S of JSFEi'l 3 and further M) to gate 1 of T-IAC3.
S-+J) of O8FET 14 as a channel current, resulting in conduction. Similarly, the polarity of the current power supply crosses the zero point and turns, Ts! In the initial voltage state where the pole is positive (the Il13 electrode is negative), M V.5<Vc
In the voltage region where M(JSFE'l'16 has a high resistance between the drain and source, 'J'lAC
The gate current of 3 is supplied as a channel current to MO8Ii'l bow T14's 1]→S and further to M (JSIi'E'r13's S→J), and becomes conductive.After that, the switch 12 is closed and the two During this period, 1itRIAC3 is conductive, and the gate-source voltage of T15 and T16 is sufficiently small compared to the channel voltage (Vos<<
Vc It ), so there is high resistance between the drain and source of the same F and 1 bow Ill! J DC feeding control 141 (, pressure 11
M (JS circle (1') including the vicinity of the zero cross, HJ is continuously applied between the gates and sources of 13 and 14, and T
A state in which the ignition current flows to AC3 is maintained. If the switch is then opened at any phase of any half cycle, the gate-to-source voltage to MOSFETs 13 and 14 will be cut off at the time of opening of switch 12, but TTLIAC3 will already be open for that half cycle. Since it enters a conductive state at the ignition signal near the first zero cross,
At the end of a quarter cycle, the load flow is T
Continuity is maintained until the holding current of C is lower than or equal to the blocking state. By performing the above operations, you can open or open the
With the switch 12 closed, Tit and IAC 3 perform AC zero-cross power control in which they enter a conducting and blocking state at the zero-crossing point of the transformer power supply 1.

以上本発明の実施例動作の説明から解るように、1゛几
IACに点弧電流全供給するスイッチとしてはN1JN
PNの双方向性ザイリスタである補助T R,IΔ、C
の変わりに電界効果トランジスタで構成された′間流I
2)換回路を部用するため、1p合容量の充’Rt ?
tj、流に起1■する(I V /d を誤点弧は旨無
となる。また、・ゼロクロス横用回路には絶縁型M (
J S F I’、Tの絶縁ゲート金使用し同1i1 
、l炉llのゲート・ソース間チャネル下、圧で検出す
る回路構成にしているため、制御回路の電力損失が極め
て小さく、さらに従来スイッチ開放時にゼロクロス検出
回路に負荷を介して常時流れていた検出電流が、本例で
は全く流れないという利点がある。特に低?IT、流制
御が可能であるためi”l’ L等集積回路の出力で直
接制御ができる等応用化の利点は太きい。尚、へIUs
FET以外の半導体素子も前述した制御機能を有するも
のであれば使用可能であυ、回路設唱も1商宜変更でき
る。
As can be seen from the above description of the operation of the embodiment of the present invention, the switch that supplies the entire ignition current to the 1゛IAC is N1JN.
Auxiliary TR, IΔ, C which is a bidirectional zyristor of PN
A current I composed of field effect transistors instead of
2) Since the switching circuit is used, the charging Rt of 1p total capacity is required.
tj, the flow will occur 1■ (I V /d will be ignited incorrectly. Also, ・Insulated type M (
J S F I', T's insulated gate using gold 1i1
, Since the circuit is configured to detect pressure under the channel between the gate and source of the furnace 1, the power loss in the control circuit is extremely small.In addition, the power loss in the control circuit is extremely small, and in addition, the current is constantly flowing through the zero cross detection circuit through the load when the switch is opened. The advantage is that no current flows in this example. Especially low? Since IT and flow control are possible, there are great advantages in applications such as direct control using the output of integrated circuits such as i"l' L.In addition, to IUs
Semiconductor elements other than FETs can also be used as long as they have the control function described above, and the circuit design can be changed as needed.

4 り面のf7i1川な智、明 第1図−、従来のゼロクロス交流電力制御1回路図、第
2図は、不発明(・しよるゼロクロスダ流電力制御10
1路の一実施例のスイッチ回路図である。
Figure 1 - Conventional zero-cross AC power control 1 circuit diagram, Figure 2 is an uninvented zero-cross AC power control 10
FIG. 2 is a switch circuit diagram of one embodiment of a one-way switch;

Claims (1)

【特許請求の範囲】[Claims] N P N I3N素子と該素子のトリガ手段とを有す
る交流スイッチ回路において、前記トリガ手段は直流電
源とこれに接続されたスイッチ手段とによって制御され
る複数の半導体トランジスタ群によって構成されk A
tJ記複数の半導体トランジスタ群はAil記N、IF
Nr’N素子の一方の電極と割出ビ屯権間に接続され1
〜リガ信号の電流通路として柳ノ<1対のトランジスタ
と、この1対のトランジスタの開閉制御ケ11なうトラ
ンジスタとを含むことff1lt’f徴とする半導体ス
イッチ回路。
In an AC switch circuit having an N P N I3N element and a trigger means for the element, the trigger means is constituted by a plurality of semiconductor transistor groups controlled by a DC power supply and a switch means connected to the DC power supply.
tJ plural semiconductor transistor groups are Ail N, IF
1 connected between one electrode of the Nr'N element and the indexing pin
- A semiconductor switch circuit characterized by including a pair of transistors as a current path for a trigger signal, and a transistor for opening/closing control of the pair of transistors.
JP13530182A 1982-08-03 1982-08-03 Semiconductor switch circuit Pending JPS5925418A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13530182A JPS5925418A (en) 1982-08-03 1982-08-03 Semiconductor switch circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13530182A JPS5925418A (en) 1982-08-03 1982-08-03 Semiconductor switch circuit

Publications (1)

Publication Number Publication Date
JPS5925418A true JPS5925418A (en) 1984-02-09

Family

ID=15148502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13530182A Pending JPS5925418A (en) 1982-08-03 1982-08-03 Semiconductor switch circuit

Country Status (1)

Country Link
JP (1) JPS5925418A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63106262U (en) * 1986-12-26 1988-07-09

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63106262U (en) * 1986-12-26 1988-07-09

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