JPS5927112B2 - semiconductor equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device, and its main object is to efficiently control the current of the semiconductor device.

It is generally known that when a magnetic field acts on carriers inside a semiconductor, the direction of the carrier changes due to a force perpendicular to the magnetic field, and a conventional method for this purpose is a magnet diode. This magnet diode is a semiconductor pellet with magnets arranged on the outside in the vertical direction, and the magnetic field from the magnet acts on the inside of the pellet to control current. However, such indirect use of magnets requires a fairly large magnet, which is not very practical. This invention was made in consideration of the influence of the magnetic field of carriers as described above, and is a new semiconductor device that efficiently generates a magnetic field parallel to the PN junction surface of a semiconductor and controls the flow of carriers, that is, the current, by the influence of this magnetic field. I will provide a.

The present invention will be explained below with reference to various embodiments. First, the operating principle of this invention is that when voltages are applied to two conductors and current flows through them, if the currents are in the same direction, an attractive force acts between the conductors, and if the currents are in the opposite direction, a repulsive force acts between the conductors. This method takes advantage of the effect of magnetic attraction and repulsion on carriers in semiconductors.

Each basic embodiment of the present invention based on this principle will be explained in order below. First, in the first embodiment shown in FIGS. 1 and 2, 1 is a P type (or N type) first conductivity type region,
Reference numeral 2 denotes a second conductivity type region of N type (or P type), and both of them form a so-called semiconductor pellet having one PN junction surface.

Next, 3 is a first electrode provided on both ends of the first conductive region 1, 4 is a second electrode provided on the second conductive type region 2, and 5 is a first electrode provided on the upper surface of the first conductive type region 1. Fixed 5102 or U203
The insulating brittle 6 is a conductive layer provided on the insulating film 5, and 7 is a control electrode provided at both ends of the conductive layer 6. Both terminals of this control electrode T are arranged in the same direction as both terminals of the first electrode 3, and currents flowing between the two electrodes 3 and 1 are in the same direction or in opposite directions. That is, by applying respective voltages to the first electrode 3 and the prong electrode T, the current 1 flowing through the conductive layer 6 is increased.
1 and the first conductivity type region 1 in the same direction or in opposite directions, an attractive force is generated due to the direction of both currents 11 and 12.
Or a repulsive force acts.

That is, at this time, the PN of the first and second conductivity type regions 1 and 2 is
A parallel magnetic field acts on the joint surfaces. The carrier of the first conductivity type region 1 is then subjected to a Lorentz force by the magnetic field in a direction perpendicular to the direction of the magnetic field and is moved. Now, if the first conductivity type region 1 is P type and the current 12 flowing there and the current 11 flowing through the conductive layer 6 are in opposite directions, then the first conductivity type region 1
The carriers (holes) in the conductivity type region 1 are pushed in the direction of the PN junction. However, since the PN junction has a kind of barrier, a certain amount of energy is required for carriers (holes) to cross this barrier and move to the second conductivity type region 2. Therefore, if the Lorentz force applied to the carrier (hole), in other words, the current 11 flowing through the conductive layer 6 is small, the carrier (hole) will not move beyond the PN junction to the second conductivity type region 2. First, no current flows through the second electrode 4. When the current 11 flowing through the conductive layer 6 is increased beyond a certain value, carriers (holes) move across the PN junction to the second conductivity type region 2. , a current 3 flows through the second electrode 4. current 1
As the current 13 increases, the current 13 flowing through the second electrode 4 increases. That is, the amount of current 3 that flows across the PN junction surface and is shunted into the second conductivity type region 2 out of the current 12 flowing through the first conductivity type region 1 is controlled by the repulsive force of the carrier caused by the magnetic field. In short, this is current control in which a magnetic field parallel to the bonding surface is generated using currents 11 and 12, and the current 13 is made to flow more or less easily by changing the magnetic field due to changes in current 11 and current 2. Naturally, this can be said similarly regardless of whether the first conductivity type region 1 or the second conductivity type region 2 is P type or N type, and the same applies hereinafter. However, if the first conductivity type region 1 is N type and the second conductivity type region 2 is P type, the carrier of the first conductivity type region 1 is a hole, so when an attractive force acts on the carrier A current 13 flows. In the first embodiment, the magnetic field is generated only by current, and the current is controlled, but this is improved in the second embodiment shown in FIGS. 3 and 4.

In this embodiment, a ferromagnetic material 8 is sandwiched between two insulating films 5a and 5b, and the rest is the same as the first embodiment. The point of this second embodiment is that when a small magnetic field is applied to the ferromagnetic material 8, the magnetic field acting on the carrier is strengthened. Therefore, by the ferromagnetic material 8 of the lever, the second
In this embodiment, current 13 can be controlled even with weaker changes in current 1 and current 12. That is, there is an advantage that current control efficiency is further improved. The next third embodiment is a further improvement on the second embodiment, and is shown in FIGS. 5 and 6.

The key point is that a ferromagnetic material 8 is used, and a conductive layer 6 is formed in a coil shape on the insulating film 5c in the outer peripheral region of the ferromagnetic material 8 by photoetching or the like. This coil-shaped conductive layer 6 is formed by winding once or multiple times.
Alternatively, it may be formed insulated on the ferromagnetic material 8 instead of in the outer peripheral region of the ferromagnetic material 8. In addition, in the case of this third embodiment, since the direction of the magnetic field due to the coiled conductive layer 6 is different from that described above, the PN junction surfaces in the first and second conductivity type regions 1 and 2 are as shown in FIGS. 5 and 6. As shown in the figure, P-type and N-type are alternately combined in a vertical direction, and a magnetic field generated by a current 1 flowing through the coiled conductive layer 6 is applied in parallel to this PN junction surface. At this time, an insulating layer may be provided for each pair of PN junction surfaces. The operating principle of this third embodiment is similar to that of the first and second embodiments, and its more effective point is that the conductive layer 6 is formed into a coil shape. That is, for example, if this conductive layer 6 is rolled 100 times, the strength of the generated magnetic field will be about 100 times that of the second embodiment, assuming that the flowing current 11 is the same as in the second embodiment. In other words,
The current 11 is 1/100 of that in the second embodiment, and the same effect as in the second embodiment is achieved. That is, in the third embodiment, it is possible to control the current 13 with even weaker currents Tl and T2 than in the second embodiment. In any case, as is clear from the first and second embodiments, the current 13 flowing through the joint surface can be controlled by changing the current 11 and the current 12.
Furthermore, the current 12 is eventually controlled by the current 11 due to the change in the current 13.

In other words, current 11 controls current 2 and current 3.
It is already clear that the current 11 can be changed more minutely from the second to the third embodiment. Further, it goes without saying that such current control can be applied not only to the above implementation but also to structures such as transistors. As explained above, according to the present invention, the current flowing through the junction surface of the semiconductor can be controlled by the magnetic field generated by the current between the control electrodes integrated with the semiconductor, and therefore the current control is efficient and weak. Control is possible with control current.

Further, since the magnetic field generated by the flowing current is directly utilized without requiring any components such as magnets, it is possible to easily miniaturize the semiconductor device, and its range of application is wide.

[Brief explanation of drawings]

FIG. 1 is a plan view showing a first embodiment of a semiconductor device according to the present invention, FIG. 2 is a side sectional view taken along line A-A in FIG. 1, and FIG. 3 is a plan view showing a second embodiment. , FIG. 4 is a new side view taken along line B-B in FIG. 3, FIG. 5 is a plan view showing the third embodiment, and FIG. 6 is a side sectional view taken along line C-C in FIG. . DESCRIPTION OF SYMBOLS 1... First conductivity type region, region, 3... First electrode,... Insulating film, 6... Conductive layer, 2...・
... Second conductivity type 4 ... Second electrode, 5 7 ... Control electrode.

Claims (1)

[Claims] 1. A semiconductor having a first conductivity type region and a second conductivity type region different from the first conductivity type region, a first electrode provided at both ends of the first conductivity type region of the semiconductor, and the second conductivity type region. a second electrode provided in the region, a conductive layer provided insulated on the surface of the first conductivity type region and/or the second conductivity type region, and control electrodes provided at both ends of the conductive layer; A magnetic field parallel to the junction surface of the first and second conductivity type regions is generated by a current flowing between the control electrodes, and a magnetic field is generated between the first electrodes or between the first electrode and the second electrode. A semiconductor device characterized in that the current of the semiconductor device is controlled.