JPS5934640A - 絶縁物質上の半導体膜の粗大結晶粒化乃至単結晶化法 - Google Patents

絶縁物質上の半導体膜の粗大結晶粒化乃至単結晶化法

Info

Publication number
JPS5934640A
JPS5934640A JP57143994A JP14399482A JPS5934640A JP S5934640 A JPS5934640 A JP S5934640A JP 57143994 A JP57143994 A JP 57143994A JP 14399482 A JP14399482 A JP 14399482A JP S5934640 A JPS5934640 A JP S5934640A
Authority
JP
Japan
Prior art keywords
electron
electron gun
cathode
projecting sections
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57143994A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0232747B2 (2
Inventor
Kenji Shibata
健二 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57143994A priority Critical patent/JPS5934640A/ja
Publication of JPS5934640A publication Critical patent/JPS5934640A/ja
Publication of JPH0232747B2 publication Critical patent/JPH0232747B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Electron Sources, Ion Sources (AREA)
  • Recrystallisation Techniques (AREA)
JP57143994A 1982-08-21 1982-08-21 絶縁物質上の半導体膜の粗大結晶粒化乃至単結晶化法 Granted JPS5934640A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57143994A JPS5934640A (ja) 1982-08-21 1982-08-21 絶縁物質上の半導体膜の粗大結晶粒化乃至単結晶化法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57143994A JPS5934640A (ja) 1982-08-21 1982-08-21 絶縁物質上の半導体膜の粗大結晶粒化乃至単結晶化法

Publications (2)

Publication Number Publication Date
JPS5934640A true JPS5934640A (ja) 1984-02-25
JPH0232747B2 JPH0232747B2 (2) 1990-07-23

Family

ID=15351834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57143994A Granted JPS5934640A (ja) 1982-08-21 1982-08-21 絶縁物質上の半導体膜の粗大結晶粒化乃至単結晶化法

Country Status (1)

Country Link
JP (1) JPS5934640A (2)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5245864A (en) * 1975-10-08 1977-04-11 Mitsubishi Electric Corp Electronic beam generating hot cathode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5245864A (en) * 1975-10-08 1977-04-11 Mitsubishi Electric Corp Electronic beam generating hot cathode

Also Published As

Publication number Publication date
JPH0232747B2 (2) 1990-07-23

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