JPH0232747B2 - - Google Patents

Info

Publication number
JPH0232747B2
JPH0232747B2 JP57143994A JP14399482A JPH0232747B2 JP H0232747 B2 JPH0232747 B2 JP H0232747B2 JP 57143994 A JP57143994 A JP 57143994A JP 14399482 A JP14399482 A JP 14399482A JP H0232747 B2 JPH0232747 B2 JP H0232747B2
Authority
JP
Japan
Prior art keywords
electron
cathode
electron gun
electron beam
semiconductor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57143994A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5934640A (ja
Inventor
Kenji Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57143994A priority Critical patent/JPS5934640A/ja
Publication of JPS5934640A publication Critical patent/JPS5934640A/ja
Publication of JPH0232747B2 publication Critical patent/JPH0232747B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Electron Sources, Ion Sources (AREA)
  • Recrystallisation Techniques (AREA)
JP57143994A 1982-08-21 1982-08-21 絶縁物質上の半導体膜の粗大結晶粒化乃至単結晶化法 Granted JPS5934640A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57143994A JPS5934640A (ja) 1982-08-21 1982-08-21 絶縁物質上の半導体膜の粗大結晶粒化乃至単結晶化法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57143994A JPS5934640A (ja) 1982-08-21 1982-08-21 絶縁物質上の半導体膜の粗大結晶粒化乃至単結晶化法

Publications (2)

Publication Number Publication Date
JPS5934640A JPS5934640A (ja) 1984-02-25
JPH0232747B2 true JPH0232747B2 (2) 1990-07-23

Family

ID=15351834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57143994A Granted JPS5934640A (ja) 1982-08-21 1982-08-21 絶縁物質上の半導体膜の粗大結晶粒化乃至単結晶化法

Country Status (1)

Country Link
JP (1) JPS5934640A (2)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5245864A (en) * 1975-10-08 1977-04-11 Mitsubishi Electric Corp Electronic beam generating hot cathode

Also Published As

Publication number Publication date
JPS5934640A (ja) 1984-02-25

Similar Documents

Publication Publication Date Title
US5310446A (en) Method for producing semiconductor film
US5371381A (en) Process for producing single crystal semiconductor layer and semiconductor device produced by said process
US4596604A (en) Method of manufacturing a multilayer semiconductor device
JPH0823105A (ja) 表示用半導体チップの製造方法
TW200304178A (en) Semiconductor element and semiconductor device using the same
US5264072A (en) Method for recrystallizing conductive films by an indirect-heating with a thermal-conduction-controlling layer
JP2501118B2 (ja) 半導体装置の製造方法
KR900002686B1 (ko) 열전도 제어층을 사용하여 간접가열 함으로써 도전성막을 재결정화하는 방법
JP2004140326A (ja) 薄膜表面の平坦化方法
FR2517123A1 (fr) Procede de formation d'une pellicule semi-conductrice monocristalline sur un isolant
KR100947180B1 (ko) 폴리실리콘 박막트랜지스터의 제조방법
JP3321890B2 (ja) 半導体結晶の形成方法及び半導体素子
JPH0232747B2 (2)
US5786261A (en) Method for fabricating semiconductor device having device isolation layer
JPH02864B2 (2)
JPS6342417B2 (2)
JPH0467336B2 (2)
JPH0236051B2 (2)
JPS62219510A (ja) 単結晶島状領域の形成方法
JPH0136972B2 (2)
JPS58180019A (ja) 半導体基体およびその製造方法
JPS63265464A (ja) 半導体装置の製造方法
JPS59194422A (ja) 半導体層の単結晶化方法
JPH0257337B2 (2)
JP2526380B2 (ja) 多層半導体基板の製造方法