JPS5935094A - シリコン単結晶の製造方法およびその装置 - Google Patents

シリコン単結晶の製造方法およびその装置

Info

Publication number
JPS5935094A
JPS5935094A JP57144073A JP14407382A JPS5935094A JP S5935094 A JPS5935094 A JP S5935094A JP 57144073 A JP57144073 A JP 57144073A JP 14407382 A JP14407382 A JP 14407382A JP S5935094 A JPS5935094 A JP S5935094A
Authority
JP
Japan
Prior art keywords
silicon
single crystal
crucible
silicon single
quartz glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57144073A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0310598B2 (da
Inventor
Hideo Nagashima
長島　秀夫
Hidekazu Taji
田路　英一
Hideyasu Matsuo
松尾　秀逸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP57144073A priority Critical patent/JPS5935094A/ja
Publication of JPS5935094A publication Critical patent/JPS5935094A/ja
Publication of JPH0310598B2 publication Critical patent/JPH0310598B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP57144073A 1982-08-20 1982-08-20 シリコン単結晶の製造方法およびその装置 Granted JPS5935094A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57144073A JPS5935094A (ja) 1982-08-20 1982-08-20 シリコン単結晶の製造方法およびその装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57144073A JPS5935094A (ja) 1982-08-20 1982-08-20 シリコン単結晶の製造方法およびその装置

Publications (2)

Publication Number Publication Date
JPS5935094A true JPS5935094A (ja) 1984-02-25
JPH0310598B2 JPH0310598B2 (da) 1991-02-14

Family

ID=15353648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57144073A Granted JPS5935094A (ja) 1982-08-20 1982-08-20 シリコン単結晶の製造方法およびその装置

Country Status (1)

Country Link
JP (1) JPS5935094A (da)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030052467A (ko) * 2001-12-21 2003-06-27 주식회사 실트론 실리콘 잉곳 성장용 흑연 도가니
KR100693917B1 (ko) 2004-12-31 2007-03-12 주식회사 실트론 실리콘 단결정
JP2008531444A (ja) * 2004-02-27 2008-08-14 ソーライクス・インコーポレイテッド 単結晶シリコンにおける連続的成長用システム
US20100028240A1 (en) * 2006-10-04 2010-02-04 Tomohiro Shonai Process for producing silicon carbide single crystal
EP2334849A4 (en) * 2008-10-16 2015-06-17 Korea Energy Research Inst GRAFIT MELT TAG FOR ELECTROMAGNETIC SILICON INDUCTION HEATING AND SILICONE MELTING AND REFINEMENT DEVICE USING GRAFIT MELT TAG

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5678496A (en) * 1979-11-30 1981-06-27 Toshiba Ceramics Co Ltd Quartz glass crucible for pulling silicon single crystal
JPS5771894A (en) * 1980-10-16 1982-05-04 Toshiba Corp Preparation of single crystal of semiconductor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5678496A (en) * 1979-11-30 1981-06-27 Toshiba Ceramics Co Ltd Quartz glass crucible for pulling silicon single crystal
JPS5771894A (en) * 1980-10-16 1982-05-04 Toshiba Corp Preparation of single crystal of semiconductor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030052467A (ko) * 2001-12-21 2003-06-27 주식회사 실트론 실리콘 잉곳 성장용 흑연 도가니
US8317919B2 (en) 2003-11-03 2012-11-27 Solaicx, Inc. System for continuous growing of monocrystalline silicon
JP2008531444A (ja) * 2004-02-27 2008-08-14 ソーライクス・インコーポレイテッド 単結晶シリコンにおける連続的成長用システム
KR100693917B1 (ko) 2004-12-31 2007-03-12 주식회사 실트론 실리콘 단결정
US20100028240A1 (en) * 2006-10-04 2010-02-04 Tomohiro Shonai Process for producing silicon carbide single crystal
EP2334849A4 (en) * 2008-10-16 2015-06-17 Korea Energy Research Inst GRAFIT MELT TAG FOR ELECTROMAGNETIC SILICON INDUCTION HEATING AND SILICONE MELTING AND REFINEMENT DEVICE USING GRAFIT MELT TAG

Also Published As

Publication number Publication date
JPH0310598B2 (da) 1991-02-14

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