JPS5939024A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5939024A
JPS5939024A JP57147715A JP14771582A JPS5939024A JP S5939024 A JPS5939024 A JP S5939024A JP 57147715 A JP57147715 A JP 57147715A JP 14771582 A JP14771582 A JP 14771582A JP S5939024 A JPS5939024 A JP S5939024A
Authority
JP
Japan
Prior art keywords
film
layer
gaas
substrate
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57147715A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0419700B2 (2
Inventor
Kenya Nakai
中井　建弥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57147715A priority Critical patent/JPS5939024A/ja
Publication of JPS5939024A publication Critical patent/JPS5939024A/ja
Publication of JPH0419700B2 publication Critical patent/JPH0419700B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H10P14/272—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition using mask materials other than SiO2 or SiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
JP57147715A 1982-08-27 1982-08-27 半導体装置の製造方法 Granted JPS5939024A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57147715A JPS5939024A (ja) 1982-08-27 1982-08-27 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57147715A JPS5939024A (ja) 1982-08-27 1982-08-27 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5939024A true JPS5939024A (ja) 1984-03-03
JPH0419700B2 JPH0419700B2 (2) 1992-03-31

Family

ID=15436555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57147715A Granted JPS5939024A (ja) 1982-08-27 1982-08-27 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5939024A (2)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62219616A (ja) * 1986-03-20 1987-09-26 Oki Electric Ind Co Ltd ＧａＡｓの結晶成長方法
JPH0462917A (ja) * 1990-07-02 1992-02-27 Hikari Gijutsu Kenkyu Kaihatsu Kk 化合物半導体の選択成長方法
JPH05121328A (ja) * 1991-10-28 1993-05-18 Hikari Gijutsu Kenkyu Kaihatsu Kk 化合物半導体エピタキシヤル成長方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5161265A (en) * 1974-11-25 1976-05-27 Handotai Kenkyu Shinkokai 335 zokukagobutsuhandotaisoshi

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5161265A (en) * 1974-11-25 1976-05-27 Handotai Kenkyu Shinkokai 335 zokukagobutsuhandotaisoshi

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62219616A (ja) * 1986-03-20 1987-09-26 Oki Electric Ind Co Ltd ＧａＡｓの結晶成長方法
JPH0462917A (ja) * 1990-07-02 1992-02-27 Hikari Gijutsu Kenkyu Kaihatsu Kk 化合物半導体の選択成長方法
JPH05121328A (ja) * 1991-10-28 1993-05-18 Hikari Gijutsu Kenkyu Kaihatsu Kk 化合物半導体エピタキシヤル成長方法

Also Published As

Publication number Publication date
JPH0419700B2 (2) 1992-03-31

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