JPS59455B2 - Method for manufacturing doped silica glass - Google Patents
Method for manufacturing doped silica glassInfo
- Publication number
- JPS59455B2 JPS59455B2 JP5093276A JP5093276A JPS59455B2 JP S59455 B2 JPS59455 B2 JP S59455B2 JP 5093276 A JP5093276 A JP 5093276A JP 5093276 A JP5093276 A JP 5093276A JP S59455 B2 JPS59455 B2 JP S59455B2
- Authority
- JP
- Japan
- Prior art keywords
- glass
- fine powder
- doped silica
- silica glass
- oxide fine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/012—Manufacture of preforms for drawing fibres or filaments
- C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Glass Melting And Manufacturing (AREA)
- Manufacture, Treatment Of Glass Fibers (AREA)
Description
【発明の詳細な説明】
本発明は光ガラスファイバなどに使用される純度の高い
屈折率の制御されたドープトシリカガラスの製造法に関
するものでめる。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing doped silica glass of high purity and a controlled refractive index used for optical glass fibers and the like.
シリカを主成分とし、少量の他の金属酸化物を含有する
ドーブトシリカガラスは、光損失が小さいことおよび屈
折率の制御性が良いことにより、光伝送ガラスファイバ
用材料として有望視されている。Doped silica glass, which is mainly composed of silica and contains small amounts of other metal oxides, is seen as a promising material for optical transmission glass fibers due to its low optical loss and good controllability of refractive index. .
従来、ドープトシリカガラスは、特開昭49一9970
9号に示されているように、4塩化シリコンや4塩化ゲ
ルマニウムなどのハロゲン化物を出発原料として、これ
らを酸化性高温ガス中にて酸化物とし、焼結を行ない、
これを成形し、再度加熱して溶融ガラス化を行なうこと
によつて製造されることが知られている。Conventionally, doped silica glass has been disclosed in Japanese Unexamined Patent Application Publication No. 49-19970.
As shown in No. 9, halides such as silicon tetrachloride and germanium tetrachloride are used as starting materials, and these are converted into oxides in an oxidizing high-temperature gas and sintered.
It is known to be manufactured by molding this and heating it again to melt and vitrify it.
この場合には成形したものを再度加熱しなければならな
いため、工程が2つに分かれ複雑になること、および、
その間に汚染を受け光損失が増大する欠点がある。他の
ドーブトシリカの合成法として同様に、酸化物に変換可
能な蒸気体成分を用いて直接にガラス化を行ないガラス
塊を得る方法がある。この場合には工程が単純であり純
度の維持も容易である。しかし、ガラス化には、約15
00℃以上の高温が必要であり、このためガラス組成と
しての酸化物の蒸気圧が上昇し、適切なドーピングが行
なわれ難い欠点を有している。本発明はこれらの欠点を
除去し、単純にして容易な工程により、ガラスを高純度
に保ち、所望の金属酸化物のドーパント濃度分布を容易
に制御できるためのドーブトシリカガラスの製造方法に
おいて混合酸化物微粉末の焼結とガラス化を単一の工程
で行なうことを特徴としたもので、その目的は屈折率の
制御された、光損失の小さいドーブトシリカガラスを容
易に得ることにある。In this case, the molded product must be heated again, which makes the process complicated and divided into two.
During this time, there is a drawback that light loss increases due to contamination. Another method for synthesizing doped silica is to directly vitrify it using a vapor component that can be converted into an oxide to obtain a glass lump. In this case, the process is simple and purity can be easily maintained. However, for vitrification, approximately 15
A high temperature of 00° C. or higher is required, which increases the vapor pressure of the oxide in the glass composition, making it difficult to perform appropriate doping. The present invention eliminates these drawbacks and uses a simple and easy process to maintain high purity of the glass and easily control the dopant concentration distribution of desired metal oxides. It is characterized by sintering and vitrifying oxide fine powder in a single process, and its purpose is to easily obtain doped silica glass with a controlled refractive index and low optical loss. .
本発明においては、棒伏の発熱体を加熱しながらその周
囲に所望のガラヌ成分組成の混合酸化物微粉末、特に酸
化性高温ガスと反応して所望のガラス成分組成の混合酸
化物微粉末を生成するような成分組成の気体混合物と酸
化性高温ガスとの反応により生成されたガラス成分組成
の混合酸化物微粉末を付着させ、棒伏発熱体の加熱によ
りその近接部分からガラス化を行なうもので、このよう
な方法によれば、ガラス成分体は比較的低温で焼結させ
ることができるので、気化が防止でき、同時に内部から
逐次加熱溶融によりガラス化ができるので、成分の欠損
がなくガラス化を進めることができるものである。In the present invention, a mixed oxide fine powder having a desired glass component composition is formed around the heated heating element, and in particular, mixed oxide fine powder having a desired glass component composition is reacted with an oxidizing high temperature gas. A mixed oxide fine powder with a glass component composition produced by the reaction between a gas mixture with a composition such as that produced by the reaction with an oxidizing high-temperature gas is attached, and vitrification is performed from the adjacent part by heating with a rod-shaped heating element. According to this method, the glass component can be sintered at a relatively low temperature, preventing vaporization, and at the same time, it can be vitrified by successive heating and melting from the inside, so there is no loss of components and the glass can be formed. This is something that can be further developed.
通常、ドープトシリカガラスはそのドーパントの種類に
よつて種々のものがあるが、ゲルマニアを15重量パー
セントドーブしたシリカガラスを例にとつて、その製造
上困難な点を挙げれば次の通りである。Usually, there are various types of doped silica glass depending on the type of dopant, but using silica glass doped with 15 weight percent germania as an example, the difficulties in manufacturing it are as follows. .
第1図にはゲルマニア(GeO2)と酸化ほう素(B2
O3)の高温における蒸気圧曲線である(サムソノフ編
、酸化物便覧参照)。Figure 1 shows germania (GeO2) and boron oxide (B2).
This is the vapor pressure curve of O3) at high temperature (see Samsonov, ed., Oxide Handbook).
この図から分るようにGeO2は約1150)C以上で
相当の気化が生じる。すなわちこの温度以上にGeO2
を保つと実質的な欠損が生じる。したがつて酸化ゲルマ
ニウムの生成および出発部材への付着は約1150℃以
下で行なわなければならない。一方、上記した85%S
iO2−15%GeO2のガラス化は約1400℃以上
で起こることが知られている。As can be seen from this figure, considerable vaporization of GeO2 occurs at temperatures above about 1150)C. That is, above this temperature GeO2
Maintaining this will result in substantial defects. Therefore, the formation of germanium oxide and its deposition on the starting material must occur at temperatures below about 1150°C. On the other hand, the above 85% S
It is known that vitrification of iO2-15%GeO2 occurs at temperatures above about 1400C.
このような組成成分の性質がガラス化に対して苛酷条件
となることに対して、簡単容易に、制御された所望の組
成のドープトシリカガラスを得るための本発明方法を、
以下に、実施例により具体的に詳細に説明する。In view of the fact that the properties of such compositional components create harsh conditions for vitrification, the method of the present invention for easily and easily obtaining doped silica glass with a controlled desired composition,
Examples will be specifically explained in detail below.
第2図および第3図は、本発明製造方法を説明するため
の工程における一部断面側面図である。FIGS. 2 and 3 are partially sectional side views of steps for explaining the manufacturing method of the present invention.
図面に示すような、太さ6m111長さ500重の炭素
棒1を毎分30回で回転させ、通電して発熱させる。こ
の伏態で炭素棒1にノズル5を用い、原料輸送管6によ
りSiO2とGeO2の重量比が85%/15%になる
ようにSiCl4/GeCl4比を調整した原料ガスと
管7によつて送り込まれる酸化性高温ガスを混合してフ
レーム4を吹き付ける。このようにして炭素棒1の周囲
にSiO2−GeO2の焼結層3が形成される。焼結層
3の厚さが約10mmになつた時点で中心の炭素棒1に
流す電流を増加し、昇温を行ない約1600℃に保つ。
そして内部より徐々にガラス化層2の形成を進める。こ
の時当然その周囲には焼結層が堆積され続ける。第2図
および第3図はこの状態におけるものである。そして周
囲の焼結層3は常に約10mmの厚みを有するように調
節してガラス化層2の生成を進行させる。ただし最終段
には最下層までガラス化を行なう。このようにして長さ
350mm外径40mT1Lのゲルマニアドーブトシリ
カガラスを得た。その後に中心の炭素棒を引き抜き溶融
加工により充実の管状に均一にGeO2がドープされた
ガラス体が得られたこの工程で特に注意した点は、焼結
体の外径が増大するにつれて熱容量の変化によりガラス
化に必要な熱量が増加し、通電量を徐々に増し、適切な
ガラス化を行なつた点である。As shown in the drawing, a carbon rod 1 with a thickness of 6 m11 and a length of 500 weights is rotated at 30 times per minute and energized to generate heat. In this state, a nozzle 5 is used on the carbon rod 1, and a raw material gas whose SiCl4/GeCl4 ratio is adjusted so that the weight ratio of SiO2 and GeO2 is 85%/15% is fed through a raw material transport pipe 6 through a pipe 7. The flame 4 is sprayed with a mixture of oxidizing high-temperature gases. In this way, a sintered layer 3 of SiO2-GeO2 is formed around the carbon rod 1. When the thickness of the sintered layer 3 reaches about 10 mm, the current applied to the central carbon rod 1 is increased to raise the temperature and maintain it at about 1600°C.
Then, the formation of the vitrified layer 2 is gradually progressed from the inside. At this time, naturally, a sintered layer continues to be deposited around it. FIGS. 2 and 3 are in this state. The surrounding sintered layer 3 is always adjusted to have a thickness of about 10 mm, and the vitrified layer 2 is produced. However, in the final stage, the bottom layer is vitrified. In this way, a germania-doped silica glass having a length of 350 mm and an outer diameter of 40 mT1L was obtained. After that, the central carbon rod was pulled out and melted to obtain a glass body uniformly doped with GeO2 in the shape of a solid tube.What we paid particular attention to in this process was that as the outer diameter of the sintered body increased, the heat capacity changed. As a result, the amount of heat required for vitrification increased, and the amount of electricity applied was gradually increased to achieve appropriate vitrification.
また、本法によつてドーパントの欠損が防止できたのは
GeO2単体では第1図に示したような蒸気圧曲線を示
すがSIO2との混合微粉末焼結体を形成することによ
り蒸気圧が極端に低下したためであると思われる。In addition, this method was able to prevent dopant loss because GeO2 alone shows a vapor pressure curve as shown in Figure 1, but by forming a mixed fine powder sintered body with SIO2, the vapor pressure increases. This seems to be due to the extreme decline.
上述した例では均一にGeO2がドーブされたガラスに
ついてのものであるが原料輸送量をコントロールするこ
とにより径方向にドーパント濃度分布傾斜を有するもの
、およびドーパントとしてもGeO2以外にB2O3な
ども同様の手法により製造できることは明白である。In the above example, the glass is uniformly doped with GeO2, but the same method can also be used for glasses that have a dopant concentration distribution gradient in the radial direction by controlling the amount of raw material transported, and for dopants other than GeO2 such as B2O3. It is clear that it can be manufactured by
また中心の炭素棒の代わりに炭化けい素などでもよくま
た昇温方法としては上記の抵抗加熱以外に高周波誘導加
熱法も使用できるものである。Further, silicon carbide or the like may be used instead of the central carbon rod, and as a temperature raising method, a high frequency induction heating method can be used in addition to the above-mentioned resistance heating.
以上の説明で明白なように本発明においては混合酸化物
微粉末生成、焼結、ガラス化の工程を連続したことによ
りドープトシリカガラス製造の工程が簡略化され、工程
中の汚染が防止され高純度の維持が可能となりまた、ド
ーパントの気化による欠損が防止されドーパント分布の
制御すなわち屈折率分布の制御が容易になつた。このよ
うな高純度で光損失のすくない屈折率の制御されたガラ
スは、伝送損失の低い、信号伝送容量の大きな光伝送用
のガラスフアイバの材料として極めて有用である。As is clear from the above description, the present invention simplifies the process of producing doped silica glass by sequentially performing the steps of generating mixed oxide fine powder, sintering, and vitrifying, and prevents contamination during the process. High purity can be maintained, and defects due to dopant vaporization are prevented, making it easier to control the dopant distribution, that is, the refractive index distribution. Such a glass of high purity and controlled refractive index with low optical loss is extremely useful as a material for optical transmission glass fibers with low transmission loss and large signal transmission capacity.
第1図はGeO2とB2O3の蒸気圧一温度曲線を示す
グラフである。
第2図は本発明の実施例における製造工程中の工程品の
要部の断面を示す側面図第3図は第2図の線−による断
面図である。1・・・・・・炭素棒、2・・・・・・ガ
ラス化層、3・・・・・・焼結層、4・・・・・・フレ
ーム、5・・・・・・ノズル、6・・・・・・原料輸送
管、7・・・・・・ガス管。FIG. 1 is a graph showing vapor pressure-temperature curves of GeO2 and B2O3. FIG. 2 is a side view showing a cross-section of a main part of a process product during a manufacturing process in an embodiment of the present invention. FIG. 3 is a cross-sectional view taken along the line - in FIG. 2. 1... Carbon rod, 2... Vitrified layer, 3... Sintered layer, 4... Frame, 5... Nozzle, 6... Raw material transport pipe, 7... Gas pipe.
Claims (1)
微粉末または酸化性高温ガスと反応してガラス成分組成
の混合酸化物微粉末を生成するような成分組成の蒸気体
を酸化性高温ガスと共に吹き付けて反応生成微粉末を付
着し、焼結を行ない同時に内部の発熱体による加熱によ
りガラス化させることを特徴とするドープトシリカガラ
スの製造方法。 2 該酸化性高温ガスと反応して混合酸化物微粉末を生
成するような成分組成の蒸気体は金属のハロゲン化物の
混合物気体である特許請求の範囲第1項記載のドープト
シリカガラスの製造方法。 3 該酸化性高温ガスと反応して混合酸化物微粉末を生
成するような成分組成の蒸気体は四塩化けい素と四塩化
ゲルマニウムとの混合気体である特許請求の範囲第1項
および第2項記載のドープトシリカガラスの製造方法。[Scope of Claims] 1. Steam having a component composition that reacts with a mixed oxide fine powder having a glass component composition or an oxidizing high temperature gas to produce a mixed oxide fine powder having a glass component composition around a rod-shaped heating element. 1. A method for producing doped silica glass, which comprises blowing a glass body together with an oxidizing high-temperature gas to adhere reaction product fine powder, sintering the glass, and simultaneously vitrifying it by heating with an internal heating element. 2. Production of doped silica glass according to claim 1, wherein the vapor having a composition that reacts with the oxidizing high-temperature gas to produce mixed oxide fine powder is a mixture gas of metal halides. Method. 3. Claims 1 and 2, wherein the vapor having a composition that reacts with the oxidizing high-temperature gas to produce mixed oxide fine powder is a mixed gas of silicon tetrachloride and germanium tetrachloride. A method for producing doped silica glass as described in .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5093276A JPS59455B2 (en) | 1976-05-06 | 1976-05-06 | Method for manufacturing doped silica glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5093276A JPS59455B2 (en) | 1976-05-06 | 1976-05-06 | Method for manufacturing doped silica glass |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52134446A JPS52134446A (en) | 1977-11-10 |
| JPS59455B2 true JPS59455B2 (en) | 1984-01-06 |
Family
ID=12872580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5093276A Expired JPS59455B2 (en) | 1976-05-06 | 1976-05-06 | Method for manufacturing doped silica glass |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59455B2 (en) |
-
1976
- 1976-05-06 JP JP5093276A patent/JPS59455B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS52134446A (en) | 1977-11-10 |
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