JPS5952834A - プラズマ気相反応装置 - Google Patents

プラズマ気相反応装置

Info

Publication number
JPS5952834A
JPS5952834A JP57163729A JP16372982A JPS5952834A JP S5952834 A JPS5952834 A JP S5952834A JP 57163729 A JP57163729 A JP 57163729A JP 16372982 A JP16372982 A JP 16372982A JP S5952834 A JPS5952834 A JP S5952834A
Authority
JP
Japan
Prior art keywords
reactive gas
substrate
reaction
semiconductor layer
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57163729A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0436448B2 (lt
Inventor
Shunpei Yamazaki
山崎　「しゆん」平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP57163729A priority Critical patent/JPS5952834A/ja
Priority to US06/533,941 priority patent/US4582720A/en
Publication of JPS5952834A publication Critical patent/JPS5952834A/ja
Priority to US06/828,908 priority patent/US4642243A/en
Priority to US06/828,790 priority patent/US4640845A/en
Priority to US07/127,602 priority patent/US4832981A/en
Publication of JPH0436448B2 publication Critical patent/JPH0436448B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H01J37/185—Means for transferring objects between different enclosures of different pressure or atmosphere
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP57163729A 1982-09-20 1982-09-20 プラズマ気相反応装置 Granted JPS5952834A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP57163729A JPS5952834A (ja) 1982-09-20 1982-09-20 プラズマ気相反応装置
US06/533,941 US4582720A (en) 1982-09-20 1983-09-20 Method and apparatus for forming non-single-crystal layer
US06/828,908 US4642243A (en) 1982-09-20 1986-02-13 Method and apparatus for forming non-single-crystal layer
US06/828,790 US4640845A (en) 1982-09-20 1986-02-13 Method and apparatus for forming non-single-crystal layer
US07/127,602 US4832981A (en) 1982-09-20 1987-11-30 Method and apparatus for forming non-single crystal layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57163729A JPS5952834A (ja) 1982-09-20 1982-09-20 プラズマ気相反応装置

Publications (2)

Publication Number Publication Date
JPS5952834A true JPS5952834A (ja) 1984-03-27
JPH0436448B2 JPH0436448B2 (lt) 1992-06-16

Family

ID=15779550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57163729A Granted JPS5952834A (ja) 1982-09-20 1982-09-20 プラズマ気相反応装置

Country Status (1)

Country Link
JP (1) JPS5952834A (lt)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61232612A (ja) * 1985-04-08 1986-10-16 Semiconductor Energy Lab Co Ltd 気相反応装置
US5188672A (en) * 1990-06-28 1993-02-23 Applied Materials, Inc. Reduction of particulate contaminants in chemical-vapor-deposition apparatus
US5512102A (en) * 1985-10-14 1996-04-30 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61232612A (ja) * 1985-04-08 1986-10-16 Semiconductor Energy Lab Co Ltd 気相反応装置
US5512102A (en) * 1985-10-14 1996-04-30 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US5188672A (en) * 1990-06-28 1993-02-23 Applied Materials, Inc. Reduction of particulate contaminants in chemical-vapor-deposition apparatus
US5322567A (en) * 1990-06-28 1994-06-21 Applied Materials, Inc. Particulate reduction baffle with wafer catcher for chemical-vapor-deposition apparatus
US5397596A (en) * 1990-06-28 1995-03-14 Applied Materials, Inc. Method of reducing particulate contaminants in a chemical-vapor-deposition system

Also Published As

Publication number Publication date
JPH0436448B2 (lt) 1992-06-16

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