JPS5961984A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS5961984A JPS5961984A JP57172788A JP17278882A JPS5961984A JP S5961984 A JPS5961984 A JP S5961984A JP 57172788 A JP57172788 A JP 57172788A JP 17278882 A JP17278882 A JP 17278882A JP S5961984 A JPS5961984 A JP S5961984A
- Authority
- JP
- Japan
- Prior art keywords
- light
- laser element
- emitting
- passing
- feedback
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0064—Anti-reflection components, e.g. optical isolators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
く技術分野〉
本発明は半導体レーザ装置に関し、特に屈折率導波機構
で光を閉じ込めた半導体レーデ装置の雑音特性を改善す
る技術に関するものである。DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a semiconductor laser device, and more particularly to a technique for improving the noise characteristics of a semiconductor laser device that confines light using a refractive index waveguide mechanism.
〈従来技術〉
半導体レーザ装置は光通信システムの他、近年特にビデ
オディスク装置やオーディオディスク装置に於けるピッ
クアンプ系の光源として利用されるようになった。しか
しながら、半導体レーザ装置をピックアップ系の光源と
して用すた場合、ディスク面で反射されたレーザ光の反
射光がgI還光となって半導体レーザ装置に入射された
際に半導体レーデ装置t/CN、音が発生し、このため
、ビデオディスクからの再生画像の画質低下あるいはオ
ーディオディスクからの再生音に異常音の発生を招く結
果となり実用上の大きな問題となって−た。<Prior Art> In addition to optical communication systems, semiconductor laser devices have recently come to be used as light sources for pick amplifier systems, particularly in video disk devices and audio disk devices. However, when a semiconductor laser device is used as a light source for a pickup system, when the reflected light of the laser beam reflected on the disk surface becomes gI return light and enters the semiconductor laser device, the semiconductor laser device t/CN, This results in a reduction in the quality of the image reproduced from the video disc or abnormal sound in the sound reproduced from the audio disc, posing a serious problem in practice.
反射帰還光の入射による雑音の発生は、縦モードか単一
なものに比べてマルチモードの素子の方が少なく安定で
あることが知られて因る。また、単−縦モードのレーデ
素子であっても、縦モードのスペクトル幅が大きく、時
間的コヒーレント長がレーザ素子とディスク面の距離よ
りも短い素子は逆に長い素子よりも雑音の発生が少なく
、安定であることが知られている。This is because it is known that multi-mode elements generate less noise due to the incidence of reflected feedback light and are more stable than single longitudinal mode elements. In addition, even if it is a single-longitudinal mode Rade element, an element with a large longitudinal mode spectral width and a temporal coherence length shorter than the distance between the laser element and the disk surface will generate less noise than an element with a longer temporal coherence length. , is known to be stable.
縦モードが単一なレーザ素子は光を屈折率導波機構で閉
じ込めた方が得られ易く、縦マルチモードを有するレー
デ素子は光を利得導波機構で閉じ込めた方が得られ易い
。しかしながら、利得導波機構で光を閉じ込めたレーザ
素子は横モードが不安定であり、注入電流の変化等によ
り横方向の発振モー)・′がffJJl−易・く、ビッ
クア・7プ等の光学系(、てイナ用しプね場合((け光
軸か変化することとな−3て実用に倶することかできな
い。従って、ピックアップ系の光源として用いる一゛1
′、導体し−゛!/′装置ばH(折率導波機構で光を閉
じ込める方式のものが用−られる。、この」二で更に何
1音の発生を抑制する観点より縦モードがマルチになる
ようにレーザ素子を構成するかある因は単−縦モードで
あっても、そのレーザ素子の時聞的コヒーレット長がレ
ーザ素Pとディスク面の距離よりも短くなるように構成
することが必要となる。It is easier to obtain a laser element with a single longitudinal mode by confining light with a refractive index waveguide mechanism, and it is easier to obtain a laser element with multiple longitudinal modes by confining light with a gain waveguide mechanism. However, the transverse mode of a laser element that confines light using a gain waveguide mechanism is unstable, and due to changes in the injected current, the transverse oscillation mode ( When using a pickup system as a light source, the optical axis changes and it cannot be put to practical use.
′、Conductor-゛! The device used is one that confines light using a refractive index waveguide mechanism.In order to further suppress the generation of sound, the laser element is designed to have multiple longitudinal modes. Even if the laser element is configured in a single longitudinal mode, it is necessary to configure the laser element so that the temporal coheret length is shorter than the distance between the laser element P and the disk surface.
1111折率導波機構は周知の如く活性層をヘテロ接合
界面で限定し、活性層に光の屈折率差を付与してストラ
イプ状の微小領域へ光が集束されるようにすノ′シば得
らルる。しかしながらこの構造では光の隼束度が高く縦
モードは安定な単一モードとなるのか一般的である。As is well known, the 1111 refractive index waveguide mechanism confines the active layer at the heterojunction interface, gives the active layer a difference in the refractive index of light, and focuses the light onto a striped micro region. I can get it. However, in this structure, the flux of light is high and the longitudinal mode is generally a stable single mode.
才た、縦モードのヌペクFル+Ivイも小さく、コヒー
レント長もレーザ素子とディスク面間の距謙、より短く
なるのが一般的である。In general, the vertical mode F + Iv is small, and the coherent length is generally shorter than the distance between the laser element and the disk surface.
〈発明の目的〉
本発明は屈折率導波機構で光を閉じ込めか・り縦モード
が単一に設定されたレーザ素子に技術的手段を駆使する
ことにより縦モードをマルチ化するかあるいはr:11
−モードであっても縦モードのスペクトル幅を拡張し、
コヒーレント長をレーザ素子とディスク面間の距離より
短縮することによって反4.1帰還光に対する雑音の発
生を抑制し/こ新規有用な半導体レーザ装置を提供する
ことを目的とするものである。<Object of the Invention> The present invention confines light with a refractive index waveguide mechanism, or multiplies longitudinal modes by making full use of technical means in a laser element in which a single longitudinal mode is set, or r: 11
- Expanding the spectral width of the longitudinal mode even in
It is an object of the present invention to provide a new and useful semiconductor laser device in which the generation of noise in anti-4.1 feedback light is suppressed by making the coherence length shorter than the distance between the laser element and the disk surface.
〈発明のa要〉
半導体レーザの発振縦モード数とスペクトル幅は自然放
出光係数に依存する。理論結果によれば、発]辰モード
の出力Qpと共振自然放出光出力Qmとの比 Qm/Q
pは、αth を主モードの閾値利得、αmをQm
の利得、■をレーザ駆動電流、Ith を閾値電流、
Cを自然放出光係数とすると、Qrrv’Qp=CCI
/I th−1) (1−am/a t I]) 〕’
・ ・ ・(1)
なる。捷た各モードのスペクトル幅△fはMを有効モー
1−数、τI)を光子のノを命時間とするとMC(1/
1th−1−2)/(I/Ith+1) 、、(2)
/ゝf″″ 2yr、τp(I Ith−1)
′となる。(1)式から明らかなように自然放出光
係数か大きくなると共1辰自然放出光Qmの出力がQl
)に比へ411対的に大きくなるのでマルチモードとな
る。外だ(2)式から、自然放出光係数が大きくなると
スペクトル幅が太きくなり、従ってコヒーレント長が小
さくなることかわかる。以上の如く縦モードのマルチ化
やコヒーレント長を短くするには自然放出光係数を大き
くすることが有効である。<Summary of the Invention> The number of oscillation longitudinal modes and the spectral width of a semiconductor laser depend on the spontaneous emission coefficient. According to the theoretical results, the ratio between the output Qp of the dragon mode and the output Qm of the resonant spontaneous emission light is Qm/Q.
p, αth is the threshold gain of the main mode, αm is Qm
gain, ■ is the laser drive current, Ith is the threshold current,
If C is the spontaneous emission coefficient, then Qrrv'Qp=CCI
/I th-1) (1-am/at I]) ]'
・ ・ ・(1) Become. The spectral width △f of each shunted mode is MC(1/
1th-1-2)/(I/Ith+1),,(2)
/ゝf″″ 2yr, τp(I Ith-1)
'. As is clear from equation (1), as the spontaneous emission coefficient increases, the output of the spontaneous emission Qm becomes Ql.
), the ratio increases by 411, so it becomes a multi-mode. From equation (2), it can be seen that as the spontaneous emission coefficient increases, the spectral width increases, and therefore the coherence length decreases. As described above, it is effective to increase the spontaneous emission coefficient in order to create multiple longitudinal modes and shorten the coherent length.
本発明の゛1イ、導体レーザ装置では、レーザ素子構造
を変化することなく、自然放出光係数を実効的に大きく
することができる1、
〈実施例〉
以下、本発明を実施例に従って図面を参照しながら詳説
する。1. In the conductor laser device of the present invention, the spontaneous emission coefficient can be effectively increased without changing the structure of the laser element. This will be explained in detail with reference.
屈折率導波機構で光を閉じ込めたGaAlAs −G
a A S %’の化合物半導体から成るレーザ素子の
発]辰スペクトルを第1図に示す。このスペクトルは縦
モードが単一であることを示している6、また、第2図
は本発明の1実施例を示す1′、導体レーザ装置の模式
構成ヅである。GaAlAs-G that confines light with a refractive index waveguide mechanism
FIG. 1 shows the emission spectrum of a laser device made of a compound semiconductor of . This spectrum shows that there is a single longitudinal mode6.Furthermore, FIG. 2 shows an embodiment of the present invention 1' and a schematic configuration of a conductor laser device.
第1図に示すスペクトル特性を有するレーザ素子(11
を出射した光は、コリメートンレンズ(2)で平行光と
なり、ビームスブリック(3)、4分の1波長板(4)
を通過して放射される。レーザ素子(1)の出射光の偏
光方向は図中の矢印の如く出射方向に対して垂直になる
ように設定しておく。4分の1波長板(4)を通過する
と出射光の直線偏光は円偏光となる。出射光は例えば光
学ディスクに照射され、情報の出込み、読取りが行なわ
れるっディスクから反射した光は出射経路を逆に進み、
4分の1波長板(4)を通過すると再び直線偏光となる
が偏光方向はレーザ素子(1)の出射光の偏光方向とは
906異なっている。この光はビームスプリッタ(3)
を通過すると−)■は90°曲げられ、読み収り川の光
学系に進み、残りはレーザ素子(1)へ帰還される。レ
ーザ素子(1)へ戻った光は、レーザ素f’−(]、)
の出射光と、は偏光方向が90°異なっているので、レ
ーザ素J’(1)に幼して自然放出光と同¥1′:とな
る。このため、この゛1′、導体レーザ装置に於けるレ
ーデ素子(1)は実効的(て自然放出光か増大したこと
となり、従ってtL)然放出光係数が犬きぐなる3、自
然放出光係数を大きくすることにより、中−の縦モード
がマルチ化されるか−f/ζは1゛11−モードであっ
てもスペク1、ル幅が広くなる。縦モードがマルヂモー
ドとなるか一中一モードであってモスベクトル幅か広く
なれば、前述した如く出力光のディスク板等からの信号
光か入1′1.1さhた場合でも雑音の発生か少なくな
り、安定な情報検出かDJ能となる。A laser element (11
The emitted light becomes parallel light through the collimator lens (2), and then passes through the beam block (3) and the quarter-wave plate (4).
is emitted through the The polarization direction of the emitted light from the laser element (1) is set to be perpendicular to the emitted direction as shown by the arrow in the figure. After passing through the quarter-wave plate (4), the linearly polarized light of the emitted light becomes circularly polarized light. For example, the emitted light is irradiated onto an optical disk, and information is read out and output.The light reflected from the disk travels in the opposite direction along the emitted path.
When the light passes through the quarter-wave plate (4), it becomes linearly polarized light again, but the polarization direction is different by 906 points from the polarization direction of the light emitted from the laser element (1). This light is beam splitter (3)
After passing through -), it is bent by 90 degrees, and the remaining light is returned to the laser element (1). The light that returns to the laser element (1) is the laser element f'-(], )
Since the emitted light and the polarization direction are different by 90 degrees, the laser element J'(1) has the same polarization direction as the spontaneously emitted light. Therefore, 1', the effective (spontaneous emission) of the radar element (1) in the conductor laser device has increased, and therefore tL, the spontaneous emission coefficient becomes insignificant. 3, the spontaneous emission coefficient By increasing , the medium longitudinal mode is multiplied, and even if -f/ζ is a 1゛11-mode, the spectrum width becomes wider. If the longitudinal mode becomes a multi-mode or a single-mode mode and the moss vector width becomes wide, noise will occur even if the signal light from the output light disk plate etc. is input for 1'1.1 hours as described above. This will result in stable information detection and DJ performance.
〈発明の効果〉
以上詳説した如く、本発明は仙モードを安定化するため
にIg4折率導波機構を利用して光を閉じ込めた半導体
レーザ装置に於いて、縦モードのマルチ化−まだはスペ
クトル幅の拡大化を行ったものであり、これによってデ
ィスク智・からの帰還光かレーザ素子に入射された場合
に生ずる雑音が抑制され、安定な動作を得ることができ
る。<Effects of the Invention> As explained in detail above, the present invention is capable of achieving multiple longitudinal modes in a semiconductor laser device that confines light by using an Ig4 refractive index waveguide mechanism to stabilize the semicircular mode. The spectral width has been expanded, which suppresses the noise that occurs when the feedback light from the disk is incident on the laser element, making it possible to obtain stable operation.
第1図は屈升率導波機構で光を閉じ込めたレーザぶ子の
発振スペクトルを示す説明図である。
第2図は本発明のI実JM例を示す゛1′導体レーサ゛
装置の模式構成図である。
トレーザ1子、 2 コリメートレンズ、;3・・・
ヒームスブリソク、 4・・4分の1波a板。FIG. 1 is an explanatory diagram showing the oscillation spectrum of a laser bulb in which light is confined by a refractive index waveguide mechanism. FIG. 2 is a schematic diagram of a 1' conductor laser device showing an example of the I-JM of the present invention. 1 tracer, 2 collimating lens, 3...
Heems Burisoku, 4...1/4 wave A board.
Claims (1)
素子より出力される出射光と該出射光の反射帰還光に於
ける偏光方向を相互に略々9゜度の角度となるように光
学系を設置したことを特徴とする半導体レーザ装置。1. Optical control so that the polarization directions of the emitted light output from a single-longitudinal mode semiconductor laser device having a refractive index waveguide mechanism and the reflected feedback light of the emitted light are at an angle of approximately 9 degrees with respect to each other. A semiconductor laser device characterized by having a system installed therein.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57172788A JPS5961984A (en) | 1982-09-30 | 1982-09-30 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57172788A JPS5961984A (en) | 1982-09-30 | 1982-09-30 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5961984A true JPS5961984A (en) | 1984-04-09 |
Family
ID=15948362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57172788A Pending JPS5961984A (en) | 1982-09-30 | 1982-09-30 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5961984A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114122899A (en) * | 2022-01-28 | 2022-03-01 | 苏州长光华芯光电技术股份有限公司 | Wavelength locking system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56145534A (en) * | 1980-04-11 | 1981-11-12 | Mitsubishi Electric Corp | Semiconductor laser |
| JPS5783080A (en) * | 1980-11-10 | 1982-05-24 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser module device |
| JPS5792438A (en) * | 1980-11-28 | 1982-06-09 | Ricoh Co Ltd | Recording method by laser beam |
| JPS5793314A (en) * | 1980-12-02 | 1982-06-10 | Fujitsu Ltd | Semiconductor laser optical device |
-
1982
- 1982-09-30 JP JP57172788A patent/JPS5961984A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56145534A (en) * | 1980-04-11 | 1981-11-12 | Mitsubishi Electric Corp | Semiconductor laser |
| JPS5783080A (en) * | 1980-11-10 | 1982-05-24 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser module device |
| JPS5792438A (en) * | 1980-11-28 | 1982-06-09 | Ricoh Co Ltd | Recording method by laser beam |
| JPS5793314A (en) * | 1980-12-02 | 1982-06-10 | Fujitsu Ltd | Semiconductor laser optical device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114122899A (en) * | 2022-01-28 | 2022-03-01 | 苏州长光华芯光电技术股份有限公司 | Wavelength locking system |
| CN114122899B (en) * | 2022-01-28 | 2022-04-05 | 苏州长光华芯光电技术股份有限公司 | Wavelength locking system |
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