JPS596555A - Wafer attraction fixed base - Google Patents

Wafer attraction fixed base

Info

Publication number
JPS596555A
JPS596555A JP57115397A JP11539782A JPS596555A JP S596555 A JPS596555 A JP S596555A JP 57115397 A JP57115397 A JP 57115397A JP 11539782 A JP11539782 A JP 11539782A JP S596555 A JPS596555 A JP S596555A
Authority
JP
Japan
Prior art keywords
wafer
rim
suction
attraction base
table base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57115397A
Other languages
Japanese (ja)
Inventor
Masayoshi Serizawa
芹澤 正芳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57115397A priority Critical patent/JPS596555A/en
Publication of JPS596555A publication Critical patent/JPS596555A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To remarkably reduce the probability that warp generates on a wafer, even when foreign matters are deposited on the back surface of a wafer or the top surface of an attraction base, with the difficulty of receiving the influence by the foreign matters. CONSTITUTION:The top surface of an attraction base 5 is finished to an accurate flat, and thus a reference flat 6 is formed, then said attraction base 5 is magnetized. The attraction base 5 is formed into a circle of slightly smaller diameter than the diameter of the wafer 3, and a projection of the height H is formed by fitting a rise rim 7 in the outer periphery thereof. Many steel balls 8 of the diameter H are formed and arranged on the reference flat 6 which is the top surface of the attraction base 5, and then spread all over inside the rise rim 7. When the wafer 3 is mounted on the attraction base 5, and a connection hole 10 is connected to a vacuum source P, the wafer 3 is attracted in vacuum toward the steel balls 8 and the rise rim 7. Thereat, even when the foreign matter 11 is deposited on the back surface (lower surface) of the wafer 3, the probability that the foreign matter 11 contained in the clearance surrounded by the steel balls each other and the wafer and deposited on the back surface of the wafer 3 has influences on the wafer 3 and thus generates warp is remarkably low.

Description

【発明の詳細な説明】 本発明は、投影露光式のパターン焼付装置などに用いら
れるウェハ吸着固定台に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wafer suction and fixing table used in a projection exposure type pattern printing apparatus or the like.

上記のパターン焼付装置においては、ウェハの表面を投
影光学系の焦点深度範囲内に位置せしめるように保持す
る必要があり、このため従来一般に第1図(平面図)及
び第2図(垂直断面図)に示すようなウェハ吸着固定台
が用いられる。
In the above-mentioned pattern printing apparatus, it is necessary to hold the wafer surface so that it is positioned within the focal depth range of the projection optical system. ) is used.

1は吸着台ベースで、その頂面に平面度の良い吸着面が
形成され、この吸着面に多数の吸引孔2を設けて真空源
Pに連通し得るようになっている。
Reference numeral 1 denotes a suction table base, on the top of which a suction surface with good flatness is formed, and a large number of suction holes 2 are provided on this suction surface so that it can communicate with a vacuum source P.

こノ吸着台ベース1の上にウェハ5を置いて吸引孔2を
真空源Pに連通させるとウニ/X5は吸着台ベース10
頂面に吸着されて保持される。
When the wafer 5 is placed on the suction table base 1 and the suction hole 2 is communicated with the vacuum source P, the sea urchin/X5 is placed on the suction table base 10.
It is adsorbed and held on the top surface.

ところが、ウェハ3の裏面(図示の下面)に前工程にお
けるゴミ、レジスト等の異物4が付着していたり、若し
くは吸着台ベース1の頂面に異物4が付着していると、
ウェハ5は異物の影響を受け、異物の上方に当たる個所
が上方に向けて凸なるごとく反りを生じる。
However, if foreign matter 4 such as dust or resist from the previous process is attached to the back surface of the wafer 3 (lower surface in the figure), or if foreign matter 4 is attached to the top surface of the suction table base 1,
The wafer 5 is affected by the foreign matter, and the portion above the foreign matter is warped so as to convex upward.

一般に投影光学系の焦点深度は極めて浅く。Generally, the depth of focus of a projection optical system is extremely shallow.

例えば±5μm程度であるから、前述の反りによってウ
ェハ5の表面が焦点深度範囲から外れて解像度が低下す
るという不具合を生じ易い。
For example, since it is about ±5 μm, the above-mentioned warpage tends to cause the problem that the surface of the wafer 5 deviates from the depth of focus range and the resolution deteriorates.

本発明は上記の事情に鑑みて為され、異物の影響を受は
難く、ウェハの裏面若しくは吸着台ベースの頂面に異物
が付着していてもウェハに反りを生じる確率が格段に少
な(、シかも異物を容易に清掃除去し得るウェハ吸着固
定台を提供することを目的とする。
The present invention was made in view of the above circumstances, and is not easily affected by foreign matter, and even if foreign matter is attached to the back surface of the wafer or the top surface of the suction table base, the probability of warping of the wafer is significantly reduced (, It is an object of the present invention to provide a wafer suction and fixing table capable of easily cleaning and removing foreign substances.

上記の目的を達成するため1本発明は1強磁性材料を用
いて基準平面を有する吸着台ベースを形成するとともに
、上記の基準平面の周囲に一定の高さを有するリム状の
突条を構成し、かつ上記の基準面の上に複数個の磁性材
料製の球を並べ、上記の球の直径を前記のリム状突条の
高さと等しくシ、上記複数個の球相互の間隙を真空源に
連通し得るように構成したことを特徴とする。
In order to achieve the above objects, the present invention uses a ferromagnetic material to form a suction table base having a reference plane, and a rim-shaped protrusion having a constant height around the reference plane. A plurality of balls made of magnetic material are arranged on the reference plane, the diameter of the balls is made equal to the height of the rim-like protrusion, and the gap between the plurality of balls is filled with a vacuum source. It is characterized by being configured so that it can be communicated with.

次に1本発明の一実施例を第5図及び第4図について説
明する。第3図は本発明装置の平面図で従来装置におけ
る第1図に対応する図、第4図は本発明装置によってウ
ェハ3を吸着保持した状態の垂直断面図で従来装置にお
ける第2図に対応する図である。
Next, an embodiment of the present invention will be described with reference to FIGS. 5 and 4. FIG. 3 is a plan view of the device of the present invention, which corresponds to FIG. 1 of the conventional device, and FIG. 4 is a vertical cross-sectional view of the wafer 3 being sucked and held by the device of the present invention, and corresponds to FIG. 2 of the conventional device. This is a diagram.

本発明は強磁性材料によって基準平面を有す石鍋によっ
て吸着台ベース5を構成し、その頂面な正確な平面に仕
上げて基準平面6を形成し。
In the present invention, the suction table base 5 is constructed of a stone pot made of ferromagnetic material and has a reference plane, and the reference plane 6 is formed by finishing the top surface to an accurate plane.

該吸着台ベース5を磁化しておく。The suction table base 5 is magnetized.

本発明は上記の基準平面の周囲に一定の高さを有するリ
ムを設ける。本実施例では前記の吸着台ベース5をウェ
ハ3の径よりも僅かに小径の円形に形成し、その外周に
立上がりリム7を嵌着して高さHの突条を形成しである
The present invention provides a rim having a constant height around the reference plane. In this embodiment, the suction table base 5 is formed into a circular shape with a diameter slightly smaller than the diameter of the wafer 3, and a raised rim 7 is fitted around the outer circumference to form a protrusion having a height H.

本発明は基準平面上に複数個の磁性体の球体を載置して
上記球体の直径を前記のリムの高さと等しくする。本実
施例では直径Hの鋼球8を多数形成して吸着台ベース5
0頂面である基準平面6の上に並べ、立上がりリム7の
内側いっばいに敷き詰める。前記の永久磁石鋼製の吸着
台ベースの磁力によって多数の鋼球8は基準平面に吸着
される。
In the present invention, a plurality of magnetic spheres are placed on a reference plane, and the diameter of the spheres is made equal to the height of the rim. In this embodiment, a large number of steel balls 8 with a diameter H are formed to form a suction table base 5.
They are lined up on the reference plane 6 which is the top surface of 0, and spread all over the inside of the rising rim 7. A large number of steel balls 8 are attracted to the reference plane by the magnetic force of the suction base made of permanent magnetic steel.

本発明は上記の鋼球相互の間隙に真空を連通し得るよう
に構成する。本実施例は基準平面6に複数個の細孔9を
穿ち、連通孔1oを介して真空源Pに連通せしめ得るよ
うに構成する。
The present invention is constructed so that a vacuum can be communicated to the gap between the steel balls. In this embodiment, a plurality of pores 9 are bored in the reference plane 6, and the vacuum source P is communicated with the vacuum source P through the communication hole 1o.

本実施例は以上のように構成しであるので。This embodiment is configured as described above.

吸着台ベース5の上にウェハ3を載せると該ウェハ3は
立上がりリム7及び多数の鋼球8に接して多数の支承点
で支承される。この状態で連通孔10を真空源Pに接続
すると、該真空源Pは多数の鋼球8相互の間隙に連通さ
れ、ウェハ5は鋼球8及び立上がりリム7に向けて真空
吸着される。このときウェハ5の裏面(図示の下面)に
異物11が付着していても、該異物11がウェハ3と鋼
球8との間に噛み込まれる確率は非常に小さく、大抵の
場合は鋼球8同志とウエノ13とに囲まれた間隙の中に
収まる。従ってウェハ3の裏面に付着した異物11がウ
ェハ6に影響を及はして反りを生せしめる確率は従来装
置に比して格段に小さい。同様の理由で、吸着台ベース
50頂面に異@ 12が付着してもウェハ5に影響を及
はして反りを生せしめる確率は従来装置に比して格段に
小さい。鋼球8に異物が付着した場合もウェハ3に反り
を生せしめる確率は非常に小さい。
When a wafer 3 is placed on the suction table base 5, the wafer 3 contacts the rising rim 7 and a number of steel balls 8 and is supported at a number of support points. When the communication hole 10 is connected to the vacuum source P in this state, the vacuum source P is communicated with the gaps between the many steel balls 8, and the wafer 5 is vacuum-adsorbed toward the steel balls 8 and the rising rim 7. At this time, even if a foreign object 11 is attached to the back surface (lower surface in the figure) of the wafer 5, the probability that the foreign object 11 will be caught between the wafer 3 and the steel ball 8 is very small, and in most cases, the steel ball It fits in the gap between Comrade 8 and Ueno 13. Therefore, the probability that the foreign matter 11 attached to the back surface of the wafer 3 will affect the wafer 6 and cause it to warp is much smaller than in the conventional apparatus. For the same reason, even if the foreign material 12 adheres to the top surface of the suction table base 50, the probability that it will affect the wafer 5 and cause it to warp is much smaller than in the conventional device. Even if foreign matter adheres to the steel balls 8, the probability that the wafer 3 will warp is very small.

本発明に係るウェハ吸着固定台においては。In the wafer suction and fixing table according to the present invention.

ウェハ3は吸着台ベース50基準平面と直接接触するこ
となく、立上がりリム7及び鋼球8を介して吸着固定さ
れるので、接触面積は従来装置(第1図及び第2図)K
比してかなり小さい。
Since the wafer 3 is suctioned and fixed via the rising rim 7 and the steel balls 8 without directly contacting the reference plane of the suction table base 50, the contact area is smaller than that of the conventional device (FIGS. 1 and 2) K.
It's quite small compared to that.

従って真空吸着に用いる真空度は従来装置におけるより
も低くすることが適当である。
Therefore, it is appropriate that the degree of vacuum used for vacuum suction be lower than that in conventional devices.

本実施例の装置において吸着台ベース5若しくは鋼球8
に付着した塵埃などの異物を除去するには、吸着台ベー
ス5よりも強い磁力を有する磁石(図示せず1例えば適
宜の電磁石など)により鋼球8を吸いつけて吸着台ベー
ス5から離脱させ、鋼球8及び吸着台ベース5をそれぞ
れ単体の状態に分解して清掃する。清掃を終えた鋼球8
を清掃済みの吸着台ベース5の上に戻すと、鋼球8は吸
着台ベース5にa力吸着されて復元し、ウェハな真空吸
着し得る状態(第5図、第4図)となる。
In the device of this embodiment, the suction table base 5 or the steel ball 8
In order to remove foreign matter such as dust attached to the suction table base 5, the steel ball 8 is attracted to the steel ball 8 by a magnet (not shown, for example, an appropriate electromagnet) having a stronger magnetic force than the suction table base 5, and the steel ball 8 is separated from the suction table base 5. , the steel ball 8 and the suction table base 5 are each disassembled into individual units and cleaned. Steel ball 8 after cleaning
When the steel ball 8 is returned to the cleaned suction table base 5, the steel ball 8 is attracted to the suction table base 5 with a force and restored to its original state, so that a wafer can be vacuum suctioned (FIGS. 5 and 4).

以上説明したように1本発明を適用して強磁性材料によ
って基準平面を有する吸着台ベースを形成するとともに
上記基準平面の周囲に一定の高さHを有するリムを設け
、かつ、上記基準平面上に複数個の直径Hの磁性体球を
載置して。
As explained above, one aspect of the present invention is to form a suction table base having a reference plane from a ferromagnetic material, provide a rim having a constant height H around the reference plane, and Place a plurality of magnetic spheres with a diameter of H on the.

上記複数個の磁性体球相互の間隙に真空を連通し得るよ
うに構成すると、異物の影響を受は難(、ウェハの裏面
若しくは吸着台ベースの頂面に異物が付着していてもウ
ェハに反りを生じる確率が格段に少なく、シかも異物の
清掃除去が容易であるという優れた実用的効果がある。
If the structure is configured so that a vacuum can be communicated between the plurality of magnetic spheres, it will be difficult to be affected by foreign matter (even if foreign matter is attached to the back surface of the wafer or the top surface of the suction table base, the wafer will not be affected). It has excellent practical effects in that the probability of warping is much lower and foreign matter can be easily cleaned and removed.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のウェハ吸着固定台の平面図。 第2図は同垂直断面図、第5図は本発明の一実施例の平
面図、第4図は同垂直断面図である。 111.吸着台ベース、200.吸引孔、5−0.ウェ
ハ。 4・・・異物、5・・・吸着台ベース、6・・・基準平
面。 7・・・立上がりリム、8・・・鋼球、9・・・細孔、
10・・・連通孔、11.12・・・異物。 T  1  図 才 7−  已
FIG. 1 is a plan view of a conventional wafer suction and fixing table. 2 is a vertical sectional view of the same, FIG. 5 is a plan view of an embodiment of the present invention, and FIG. 4 is a vertical sectional view of the same. 111. Suction stand base, 200. Suction hole, 5-0. wafer. 4... Foreign object, 5... Suction table base, 6... Reference plane. 7... Rising rim, 8... Steel ball, 9... Pore,
10...Communication hole, 11.12...Foreign object. T 1 Illustration 7- 已

Claims (1)

【特許請求の範囲】[Claims] 強磁性材料によって基準平面を有する吸着台ベースを形
成するとともに、上記基準平面の周囲に一定の高さを有
するリムを設け、かつ、上記基準平面上に複数個の磁性
体の球体を載置して上記球体の直径を前記のリムの高さ
と等しくし、上記複数個の球体相互の間隙に真空を連通
し得るように構成したことを特徴とするウェハ吸着固定
台。
A suction table base having a reference plane is formed from a ferromagnetic material, a rim having a certain height is provided around the reference plane, and a plurality of magnetic spheres are placed on the reference plane. The wafer suction and fixing table is characterized in that the diameter of the sphere is made equal to the height of the rim, and the vacuum is communicated between the plurality of spheres.
JP57115397A 1982-07-05 1982-07-05 Wafer attraction fixed base Pending JPS596555A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57115397A JPS596555A (en) 1982-07-05 1982-07-05 Wafer attraction fixed base

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57115397A JPS596555A (en) 1982-07-05 1982-07-05 Wafer attraction fixed base

Publications (1)

Publication Number Publication Date
JPS596555A true JPS596555A (en) 1984-01-13

Family

ID=14661546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57115397A Pending JPS596555A (en) 1982-07-05 1982-07-05 Wafer attraction fixed base

Country Status (1)

Country Link
JP (1) JPS596555A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62193139A (en) * 1986-02-19 1987-08-25 Canon Inc Ball contact type wafer chuck
JPH0870034A (en) * 1994-05-18 1996-03-12 Applied Materials Inc Patterned susceptor to reduce electrostatic forces

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62193139A (en) * 1986-02-19 1987-08-25 Canon Inc Ball contact type wafer chuck
JPH0870034A (en) * 1994-05-18 1996-03-12 Applied Materials Inc Patterned susceptor to reduce electrostatic forces

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