JPS5975656A - 半導体集積回路構造 - Google Patents

半導体集積回路構造

Info

Publication number
JPS5975656A
JPS5975656A JP57187044A JP18704482A JPS5975656A JP S5975656 A JPS5975656 A JP S5975656A JP 57187044 A JP57187044 A JP 57187044A JP 18704482 A JP18704482 A JP 18704482A JP S5975656 A JPS5975656 A JP S5975656A
Authority
JP
Japan
Prior art keywords
light
optical waveguide
region
substrate
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57187044A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0517712B2 (fr
Inventor
Toshihiro Sekikawa
敏弘 関川
Yutaka Hayashi
豊 林
Hitoshi Kawanami
仁志 川浪
Kiyoko Nagai
永井　清子
Hidekazu Suzuki
英一 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57187044A priority Critical patent/JPS5975656A/ja
Publication of JPS5975656A publication Critical patent/JPS5975656A/ja
Publication of JPH0517712B2 publication Critical patent/JPH0517712B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP57187044A 1982-10-25 1982-10-25 半導体集積回路構造 Granted JPS5975656A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57187044A JPS5975656A (ja) 1982-10-25 1982-10-25 半導体集積回路構造

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57187044A JPS5975656A (ja) 1982-10-25 1982-10-25 半導体集積回路構造

Publications (2)

Publication Number Publication Date
JPS5975656A true JPS5975656A (ja) 1984-04-28
JPH0517712B2 JPH0517712B2 (fr) 1993-03-09

Family

ID=16199188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57187044A Granted JPS5975656A (ja) 1982-10-25 1982-10-25 半導体集積回路構造

Country Status (1)

Country Link
JP (1) JPS5975656A (fr)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63170958A (ja) * 1987-01-09 1988-07-14 Agency Of Ind Science & Technol 光−電子素子
US4847848A (en) * 1987-02-20 1989-07-11 Sanyo Electric Co., Ltd. Semiconductor laser device
US4945391A (en) * 1986-05-06 1990-07-31 Mitsubishi Denki Kabushiki Kaisha Semiconductor device housing with laser diode and light receiving element
US4989067A (en) * 1989-07-03 1991-01-29 General Electric Company Hybrid interconnection structure
US5016253A (en) * 1989-04-12 1991-05-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
US5627923A (en) * 1993-09-16 1997-05-06 Hitachi, Ltd. Three-dimensional opto-electric integrated circuit using optical wiring
JP2651509B2 (ja) * 1990-06-29 1997-09-10 フォトニック インテグレイション リサーチ，インコーポレイテッド 金属化基板に光導波路を有する光電装置及びその光導波路の形成方法
JPH11330503A (ja) * 1998-04-10 1999-11-30 Fr Telecom 信号処理の光電子工学方法、その実施装置と用途
WO2003096437A3 (fr) * 2002-05-06 2004-02-05 Intel Corp Dispositif electroluminescent de silicium et de silicium/germanium, procedes et systemes associes
US6897430B2 (en) 2000-12-28 2005-05-24 Canon Kabushiki Kaisha Semiconductor device, optoelectronic board, and production methods therefor
US6928205B2 (en) 2002-08-02 2005-08-09 Canon Kabushiki Kaisha Optical waveguide device, layered substrate and electronics using the same
JP2009020391A (ja) * 2007-07-13 2009-01-29 Fuji Xerox Co Ltd 光導波路及び光モジュール
WO2013111173A1 (fr) * 2012-01-23 2013-08-01 株式会社日立製作所 Élément semi-conducteur de réception de lumière et récepteur de lumière
JPWO2013111173A1 (ja) * 2012-01-23 2015-05-11 株式会社日立製作所 半導体受光素子および光受信器

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4797221B2 (ja) * 2000-02-21 2011-10-19 ソニー株式会社 光電子集積回路装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4846278A (fr) * 1971-10-06 1973-07-02
JPS5429989A (en) * 1977-08-10 1979-03-06 Nec Corp Photo semiconductor integrated circuit
JPS5624984A (en) * 1979-08-08 1981-03-10 Nec Corp Light and electric hybrid integrated circuit
JPS5715465A (en) * 1980-07-02 1982-01-26 Fujitsu Ltd Large scale optical integrated circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4846278A (fr) * 1971-10-06 1973-07-02
JPS5429989A (en) * 1977-08-10 1979-03-06 Nec Corp Photo semiconductor integrated circuit
JPS5624984A (en) * 1979-08-08 1981-03-10 Nec Corp Light and electric hybrid integrated circuit
JPS5715465A (en) * 1980-07-02 1982-01-26 Fujitsu Ltd Large scale optical integrated circuit

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4945391A (en) * 1986-05-06 1990-07-31 Mitsubishi Denki Kabushiki Kaisha Semiconductor device housing with laser diode and light receiving element
JPS63170958A (ja) * 1987-01-09 1988-07-14 Agency Of Ind Science & Technol 光−電子素子
US4847848A (en) * 1987-02-20 1989-07-11 Sanyo Electric Co., Ltd. Semiconductor laser device
US5016253A (en) * 1989-04-12 1991-05-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
US4989067A (en) * 1989-07-03 1991-01-29 General Electric Company Hybrid interconnection structure
JP2651509B2 (ja) * 1990-06-29 1997-09-10 フォトニック インテグレイション リサーチ，インコーポレイテッド 金属化基板に光導波路を有する光電装置及びその光導波路の形成方法
US5627923A (en) * 1993-09-16 1997-05-06 Hitachi, Ltd. Three-dimensional opto-electric integrated circuit using optical wiring
JPH11330503A (ja) * 1998-04-10 1999-11-30 Fr Telecom 信号処理の光電子工学方法、その実施装置と用途
US6936808B2 (en) 2000-12-28 2005-08-30 Canon Kabushiki Kaisha Semiconductor device, optoelectronic board, and production methods therefor
US6897430B2 (en) 2000-12-28 2005-05-24 Canon Kabushiki Kaisha Semiconductor device, optoelectronic board, and production methods therefor
US7141778B2 (en) 2000-12-28 2006-11-28 Canon Kabushiki Kaisha Semiconductor device, optoelectronic board, and production methods therefor
US6924510B2 (en) 2002-05-06 2005-08-02 Intel Corporation Silicon and silicon/germanium light-emitting device, methods and systems
WO2003096437A3 (fr) * 2002-05-06 2004-02-05 Intel Corp Dispositif electroluminescent de silicium et de silicium/germanium, procedes et systemes associes
US7169631B2 (en) 2002-05-06 2007-01-30 Intel Corporation Silicon and silicon/germanium light-emitting device, methods and systems
US6928205B2 (en) 2002-08-02 2005-08-09 Canon Kabushiki Kaisha Optical waveguide device, layered substrate and electronics using the same
JP2009020391A (ja) * 2007-07-13 2009-01-29 Fuji Xerox Co Ltd 光導波路及び光モジュール
WO2013111173A1 (fr) * 2012-01-23 2013-08-01 株式会社日立製作所 Élément semi-conducteur de réception de lumière et récepteur de lumière
US20150001581A1 (en) * 2012-01-23 2015-01-01 Hitachi, Ltd. Semiconductor light receiving element and light receiver
JPWO2013111173A1 (ja) * 2012-01-23 2015-05-11 株式会社日立製作所 半導体受光素子および光受信器

Also Published As

Publication number Publication date
JPH0517712B2 (fr) 1993-03-09

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