JPH0517712B2 - - Google Patents

Info

Publication number
JPH0517712B2
JPH0517712B2 JP57187044A JP18704482A JPH0517712B2 JP H0517712 B2 JPH0517712 B2 JP H0517712B2 JP 57187044 A JP57187044 A JP 57187044A JP 18704482 A JP18704482 A JP 18704482A JP H0517712 B2 JPH0517712 B2 JP H0517712B2
Authority
JP
Japan
Prior art keywords
unit
optical
optical waveguide
transmitting
receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57187044A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5975656A (ja
Inventor
Toshihiro Sekikawa
Yutaka Hayashi
Hitoshi Kawanami
Kyoko Nagai
Hidekazu Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57187044A priority Critical patent/JPS5975656A/ja
Publication of JPS5975656A publication Critical patent/JPS5975656A/ja
Publication of JPH0517712B2 publication Critical patent/JPH0517712B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP57187044A 1982-10-25 1982-10-25 半導体集積回路構造 Granted JPS5975656A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57187044A JPS5975656A (ja) 1982-10-25 1982-10-25 半導体集積回路構造

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57187044A JPS5975656A (ja) 1982-10-25 1982-10-25 半導体集積回路構造

Publications (2)

Publication Number Publication Date
JPS5975656A JPS5975656A (ja) 1984-04-28
JPH0517712B2 true JPH0517712B2 (fr) 1993-03-09

Family

ID=16199188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57187044A Granted JPS5975656A (ja) 1982-10-25 1982-10-25 半導体集積回路構造

Country Status (1)

Country Link
JP (1) JPS5975656A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001237411A (ja) * 2000-02-21 2001-08-31 Sony Corp 光電子集積回路装置

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62260384A (ja) * 1986-05-06 1987-11-12 Mitsubishi Electric Corp 半導体装置
JP2578789B2 (ja) * 1987-01-09 1997-02-05 工業技術院長 光−電子素子
US4847848A (en) * 1987-02-20 1989-07-11 Sanyo Electric Co., Ltd. Semiconductor laser device
JPH02271586A (ja) * 1989-04-12 1990-11-06 Mitsubishi Electric Corp 半導体レーザ装置
US4989067A (en) * 1989-07-03 1991-01-29 General Electric Company Hybrid interconnection structure
US5059475A (en) * 1990-06-29 1991-10-22 Photonic Integration Research, Inc. Apparatus and method of forming optical waveguides on metalized substrates
JPH0786555A (ja) * 1993-09-16 1995-03-31 Hitachi Ltd ３次元光・電子集積回路
FR2777358B1 (fr) * 1998-04-10 2000-06-30 France Telecom Procede electrooptique de traitement de signaux, dispositif pour la mise en oeuvre de celui-ci et utilisation
JP2002286959A (ja) 2000-12-28 2002-10-03 Canon Inc 半導体装置、光電融合基板、及びそれらの製造方法
US6924510B2 (en) 2002-05-06 2005-08-02 Intel Corporation Silicon and silicon/germanium light-emitting device, methods and systems
JP3927883B2 (ja) 2002-08-02 2007-06-13 キヤノン株式会社 光導波装置、およびそれを用いた光電融合基板
JP4915303B2 (ja) * 2007-07-13 2012-04-11 富士ゼロックス株式会社 光導波路の製造方法及び光モジュールの製造方法
US20150001581A1 (en) * 2012-01-23 2015-01-01 Hitachi, Ltd. Semiconductor light receiving element and light receiver
JPWO2013111173A1 (ja) * 2012-01-23 2015-05-11 株式会社日立製作所 半導体受光素子および光受信器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4846278A (fr) * 1971-10-06 1973-07-02
JPS5429989A (en) * 1977-08-10 1979-03-06 Nec Corp Photo semiconductor integrated circuit
JPS5624984A (en) * 1979-08-08 1981-03-10 Nec Corp Light and electric hybrid integrated circuit
JPS5715465A (en) * 1980-07-02 1982-01-26 Fujitsu Ltd Large scale optical integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001237411A (ja) * 2000-02-21 2001-08-31 Sony Corp 光電子集積回路装置

Also Published As

Publication number Publication date
JPS5975656A (ja) 1984-04-28

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