JPS5975680A - Manufacture of thin film element - Google Patents

Manufacture of thin film element

Info

Publication number
JPS5975680A
JPS5975680A JP57186407A JP18640782A JPS5975680A JP S5975680 A JPS5975680 A JP S5975680A JP 57186407 A JP57186407 A JP 57186407A JP 18640782 A JP18640782 A JP 18640782A JP S5975680 A JPS5975680 A JP S5975680A
Authority
JP
Japan
Prior art keywords
resin
glass
layer
thin film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57186407A
Other languages
Japanese (ja)
Other versions
JPS6227555B2 (en
Inventor
Masaharu Ono
大野 雅晴
Takashi Hirao
孝 平尾
Koshiro Mori
森 幸四郎
Shinichiro Ishihara
石原 慎一郎
Masatoshi Kitagawa
雅俊 北川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57186407A priority Critical patent/JPS5975680A/en
Publication of JPS5975680A publication Critical patent/JPS5975680A/en
Publication of JPS6227555B2 publication Critical patent/JPS6227555B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/16Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/206Electrodes for devices having potential barriers
    • H10F77/211Electrodes for devices having potential barriers for photovoltaic cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Laminated Bodies (AREA)
  • Formation Of Insulating Films (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To prevent the generation of unsatisfactory cutting on a glass substrate and the breakage of a screen as well as to prevent the deterioration in dampproof property of an element by a method wherein a printing process is performed continuously on a hard passivation resin without separating it for each element, and the glass and the resin are broken simultaneously by giving a flaw on the surface of the glass located on the reverse side. CONSTITUTION:In the case of the solar battery and the photoelectromotive force element wherein morphous silicon is used, a transparent electrode 2 such as indium tin oxide, SnO2 and the like is formed in the thickness of approximately 500-1,500Angstrom on a glass substrate 1 of 0.5-1mm. in thickness by performing an electron beam vapor-deposition or a sputtering, and a semiconductor thin film 3 of approximately 3,500-5,000Angstrom consisting of a P-layer, an i-layer and an N-layer is deposited on said electrode 2. Then, an electrode 4 is formed by vacuum-depositing metals such as aluminum, nickel, chromium, chitanium and the like. Lastly, the above is dried up and hardened after a screen printing has been performed. Cutting is performed by producing a flaw on the glass surfaces 9, 9' opposite side of the surface coated with resin 5 by a cutting machine, and splitting the glass layer 1 and the resin 5 simultaneously.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、アモルファスシリコン太陽電池に利用される
、ガラスtta−イ3薄膜素子の爪産方法に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for producing glass tta-3 thin film elements used in amorphous silicon solar cells.

従来例の構成とその問題点 従来例は第1図に示す様にガラス基板1の上にパッシベ
ーション樹脂5が各素子ごとに分離されて塗布されてい
る。7,8は電気端子である。素子中央部のAA断面を
第2図に示す。ガラス基板」二に形成した第一・の電極
2の上にアモルファヌシリコン、カルコゲナイド化合物
半導体等の薄膜3を堆積しその上に第2の電極4を形成
し更にその上にエポキシ樹脂等のパッシベーション樹脂
5を塗布しである。パッシベーション樹脂5は主に電極
2,4や薄膜3の防湿と機械的保護の役割を果たし、太
陽電池や光起電力素子の場合は電極4と樹脂5が共に透
明であるかあるいは電極2が透明電極である必要がある
。電極2,4は各々端子7゜8は最終的に接続されてい
る。パッシベーション樹脂5は一般にスクリーン印刷で
塗布し加熱して硬化乾燥させる。塗布された樹脂のパタ
ーンを目印にして樹脂が分離されたガラス面6,6′等
にダイヤモンドやタングステンカーバイド等の刃先をも
つカッティングマシンで縦横にキズをつけた後キズをつ
けた面を外側にして折り曲げる様に力を加えて割り、第
1図の場合12個の素子が分離できる。
Structure of the conventional example and its problems In the conventional example, as shown in FIG. 1, a passivation resin 5 is applied on a glass substrate 1 separately for each element. 7 and 8 are electrical terminals. FIG. 2 shows an AA cross section at the center of the element. A thin film 3 of amorphous silicon, chalcogenide compound semiconductor, etc. is deposited on the first electrode 2 formed on the glass substrate 2, and a second electrode 4 is formed thereon. Resin 5 is applied. The passivation resin 5 mainly plays the role of moisture proofing and mechanical protection of the electrodes 2, 4 and the thin film 3, and in the case of solar cells and photovoltaic elements, both the electrode 4 and the resin 5 are transparent, or the electrode 2 is transparent. Must be an electrode. The terminals 7 and 8 of each electrode 2 and 4 are finally connected. The passivation resin 5 is generally applied by screen printing and heated to harden and dry. Using the pattern of the applied resin as a guide, scratch the glass surfaces 6, 6', etc. from which the resin has been separated, vertically and horizontally using a cutting machine with a cutting edge made of diamond or tungsten carbide, and then turn the scratched surface outward. In the case of Figure 1, 12 elements can be separated by applying force and bending the element.

従来例の第一の欠点はカノティング不良の多いことであ
る。カッティングマシンの刃先が少しでも樹脂6にかか
ればその部分はガラスにキズがつかず折り曲げるとガラ
スが任意の形状に破損j−でしまい不良品が多発する。
The first drawback of the conventional example is that there are many cases of poor canting. If the edge of the cutting machine touches the resin 6 even slightly, the glass will not be scratched at that part, and when bent, the glass will break into an arbitrary shape, resulting in many defective products.

パッシベーション樹脂6は通常の印刷と異なり厚みが2
0μ〜100μぐらいあり、スクリーン印刷でパターン
のボケを除去するのは困列トである。
Passivation resin 6 has a thickness of 2, unlike normal printing.
The thickness is about 0 to 100 μ, and it is difficult to remove pattern blur using screen printing.

寸だ硬化、乾燥のだめの加温によって一時的に粘度が低
下し、6,6′の部分の間隔0.2〜0.57nNのス
リットが部分的につながシ易い。
The viscosity is temporarily lowered by the heating of the drying pot during hardening and drying, and the slits with a spacing of 0.2 to 0.57 nN in the 6 and 6' portions tend to be partially connected.

第二の欠点は、印刷機のスクリーンが洗浄の時に破損し
やすいことである。印刷用の樹脂5は常温でも1時間〜
6時間で硬化や乾燥かはじするため定期的に溶剤でふき
取り洗浄する必要がある。
A second disadvantage is that the printing press screen is easily damaged during cleaning. Resin 5 for printing can be used for 1 hour or more even at room temperature.
It hardens and dries within 6 hours, so it must be periodically wiped off and cleaned with a solvent.

印刷用スクリーンは上記6,6′の0.2〜0.6鞄の
スリットに対応して乳剤の11が小さい部分があるだめ
洗顔の時に乳剤がメツシュからはがれ易い。
The printing screen has a small part of the emulsion 11 corresponding to the 0.2 to 0.6 slits of 6 and 6', so the emulsion easily peels off from the mesh when washing the face.

第三の欠点は、薄膜3のパターンと樹脂5のパターンの
ズレによる耐湿信頼性の低下である。ガラス基板は外寸
のバラン〜が大きく、簿朕とパッシベーション樹脂の印
刷時にそれぞれ位置ズレすると薄膜3の端部が樹脂5か
らはみ出て露出し、耐湿信頼性が低下する。
The third drawback is a decrease in moisture resistance reliability due to misalignment between the pattern of the thin film 3 and the pattern of the resin 5. The glass substrate has a large external dimension imbalance, and if the bookmark and passivation resin are misaligned during printing, the edge of the thin film 3 will protrude from the resin 5 and be exposed, reducing moisture resistance reliability.

発明の目的 本発明は、上記従来例の三つの欠点を解決し、ガラスカ
ッティング時の不良がほとんど無く、樹脂を塗布するス
クリーン印刷機のヌクリーンの寿命が3倍以上長持ちし
、印刷の位置ズレによる素子の耐湿性の低下を防ぐこと
ができる。
Purpose of the Invention The present invention solves the above three drawbacks of the conventional example, has almost no defects during glass cutting, extends the lifespan of the NuClean screen printing machine that applies resin by more than three times, and eliminates the problem of printing misalignment. Deterioration of moisture resistance of the element can be prevented.

発明の114成 本発明は、硬質のパッシベーション樹脂を各素子ごとに
分離せず連続して印刷し、樹脂を塗布した面と反対のガ
ラス面にキズをつけてガラスと樹脂を同時にカッティン
グし、複数個の薄膜素子を分禽11する方法である。
114th Form of the Invention The present invention prints a hard passivation resin continuously without separating each element, scratches the glass surface opposite to the surface on which the resin is applied, and cuts the glass and resin at the same time. This is a method for sorting thin film elements.

実施例の説明 第3図、第4図に本発明による実施例を示す。Description of examples An embodiment according to the present invention is shown in FIGS. 3 and 4.

樹脂3はエポキシ樹脂、シリコン樹脂等の耐湿性に効果
のある硬質(望しくはショア硬度8o以上)ノ樹脂を用
いる。アモルファスシリコンヲ用いる太陽電池および光
起電力素子の場合、○−5W〃i〜1M厚のガラス基板
1の」二にITO(インジウム・ティン・オキサイド)
、5n02等の透明電極2を電子ビーム蒸着やスパッタ
リングで約500人〜1500人形成し、その上にシラ
ンガス中のプラズマCVDによってP層、1層、N層の
三層から成る半導体薄膜3を約35ooλ〜5o00人
堆積スる。次に、アルミニウム、ニッケル、クロム。
As the resin 3, a hard resin (preferably having a Shore hardness of 8o or more) that is effective in moisture resistance, such as an epoxy resin or a silicone resin, is used. In the case of solar cells and photovoltaic devices that use amorphous silicon, ITO (indium tin oxide) is used for the glass substrate 1 with a thickness of ○-5W ~ 1M.
, 5n02 or the like is formed by about 500 to 1,500 people by electron beam evaporation or sputtering, and a semiconductor thin film 3 consisting of three layers, P layer, 1 layer, and N layer, is formed on it by plasma CVD in silane gas. 35ooλ~5o00 people will accumulate. Next, aluminum, nickel, and chromium.

チタン等の金属を真空蒸着して電極4を形成し、最後に
硬質の樹脂5をヌクリーン印刷した後硬化乾燥させる。
Electrodes 4 are formed by vacuum evaporating metal such as titanium, and finally hard resin 5 is printed with Nuclean and then hardened and dried.

カッティングは樹脂5を塗布した反対側のガラス面9,
9′の部分にカンティングマシンでキズをつけ、ガラス
1と硬質の樹脂6を同時に割ることができる。従って不
良がほとんど発生しない。樹脂が軟質の場合は割れにく
く、樹脂のはく離が生じ易い。エポキシ樹脂の場合、顔
料の種類によって硬度と密着ノJが変わシ、基板との密
着力が強く硬度の大きいものとして、酸化鉄(ベンガラ
)やカーボンを顔料に用いたアミン系エポキシ樹脂で良
い結果が得られた。本発明の様に樹脂を塗布する而と反
対のガラス面に゛キズをっけるIJ、、合、ガラス基板
1を通して薄膜3のパターンが見えるだめ、その中央部
にカッティングマシンのカッターヘッドを顕微鏡を用い
てセットすることができ、従来例の様なカンティングや
印刷の位置ズレによる耐湿信頼性の低下は起こらない。
Cutting is done on the glass surface 9 on the opposite side to which the resin 5 was applied.
By making a scratch on the part 9' with a canting machine, it is possible to break the glass 1 and the hard resin 6 at the same time. Therefore, almost no defects occur. If the resin is soft, it is difficult to break and peeling of the resin is likely to occur. In the case of epoxy resins, the hardness and adhesion J vary depending on the type of pigment, and good results are obtained with amine-based epoxy resins that use iron oxide (red iron oxide) or carbon as pigments, as they have strong adhesion to the substrate and high hardness. was gotten. When using IJ to make scratches on the glass surface opposite to the resin coating as in the present invention, the pattern of the thin film 3 is visible through the glass substrate 1, and the cutter head of the cutting machine is placed in the center of the IJ using a microscope. There is no deterioration in moisture resistance reliability due to canting or misalignment of printing as in conventional examples.

第3図の実施例で分かるように樹脂5をヌクリーン印刷
する時のスクリーンには[1]のせまい乳剤パターンが
無いため洗浄によって乳剤がはく離することがない。従
って従来例に比ベスクリーンが約3倍長持ちする。スク
リーン印刷の条件設定も細かいヌリノトパターンが無い
だめ容易である。
As can be seen from the embodiment shown in FIG. 3, the screen used for Nuclean printing of the resin 5 does not have the narrow emulsion pattern [1], so the emulsion does not peel off during washing. Therefore, the screen lasts about three times longer than the conventional example. Setting conditions for screen printing is also easy unless there is a fine pattern.

発明の効果 本発明によれば、ガラス基板のカッティング不良が発生
ぜず、樹脂の印刷が容易でスクリーンの一寿命が長く、
素子の耐湿信頼性が低下することがない。
Effects of the Invention According to the present invention, cutting defects of the glass substrate do not occur, resin printing is easy, and the life of the screen is long.
The moisture resistance reliability of the element does not deteriorate.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来技術を説明する為の多素子形成板の平面図
、第2図は第1図の断面図、第3図は本発明の詳細な説
明する為の多素子形成板の平面図、第4図は第3図の断
面図である。 1・・・・・・ガラス基板、2,4・・・・・・電極、
3・・・・・・薄膜、5・・・・・・樹脂、7,8・・
・・・・電気端子、9,9′・・・・・カットするガラ
ス面。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図 第2図 第3図 第4図
Fig. 1 is a plan view of a multi-element forming plate for explaining the prior art, Fig. 2 is a sectional view of Fig. 1, and Fig. 3 is a plan view of the multi-element forming plate for explaining the present invention in detail. , FIG. 4 is a sectional view of FIG. 3. 1... Glass substrate, 2, 4... Electrode,
3...Thin film, 5...Resin, 7,8...
...Electric terminal, 9,9'...Glass surface to be cut. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2 Figure 3 Figure 4

Claims (1)

【特許請求の範囲】[Claims] ガラス基板上に複数個の薄膜素子を形成し、その上に連
続した硬質のパッシベーション樹脂を塗布し硬化させた
後、前記ガラス基板の前記樹脂塗布面と対抗する面にキ
ズをつけて前記ガラス基板と樹脂を同時に割る薄膜素子
の製造法。
A plurality of thin film elements are formed on a glass substrate, a continuous hard passivation resin is applied thereon and cured, and then a surface of the glass substrate opposite to the resin-coated surface is scratched to form the glass substrate. A method for manufacturing thin film elements that simultaneously splits the resin and the resin.
JP57186407A 1982-10-22 1982-10-22 Manufacture of thin film element Granted JPS5975680A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57186407A JPS5975680A (en) 1982-10-22 1982-10-22 Manufacture of thin film element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57186407A JPS5975680A (en) 1982-10-22 1982-10-22 Manufacture of thin film element

Publications (2)

Publication Number Publication Date
JPS5975680A true JPS5975680A (en) 1984-04-28
JPS6227555B2 JPS6227555B2 (en) 1987-06-15

Family

ID=16187867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57186407A Granted JPS5975680A (en) 1982-10-22 1982-10-22 Manufacture of thin film element

Country Status (1)

Country Link
JP (1) JPS5975680A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0361357U (en) * 1989-10-17 1991-06-17

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5032589A (en) * 1973-06-28 1975-03-29
JPS58218179A (en) * 1982-06-11 1983-12-19 Sharp Corp Thin film solar battery

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5032589A (en) * 1973-06-28 1975-03-29
JPS58218179A (en) * 1982-06-11 1983-12-19 Sharp Corp Thin film solar battery

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0361357U (en) * 1989-10-17 1991-06-17

Also Published As

Publication number Publication date
JPS6227555B2 (en) 1987-06-15

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