JPS5984529A - パタ−ン形成方法 - Google Patents
パタ−ン形成方法Info
- Publication number
- JPS5984529A JPS5984529A JP57195558A JP19555882A JPS5984529A JP S5984529 A JPS5984529 A JP S5984529A JP 57195558 A JP57195558 A JP 57195558A JP 19555882 A JP19555882 A JP 19555882A JP S5984529 A JPS5984529 A JP S5984529A
- Authority
- JP
- Japan
- Prior art keywords
- film
- photoresist
- photorenost
- processed
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57195558A JPS5984529A (ja) | 1982-11-08 | 1982-11-08 | パタ−ン形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57195558A JPS5984529A (ja) | 1982-11-08 | 1982-11-08 | パタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5984529A true JPS5984529A (ja) | 1984-05-16 |
| JPH045260B2 JPH045260B2 (2) | 1992-01-30 |
Family
ID=16343103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57195558A Granted JPS5984529A (ja) | 1982-11-08 | 1982-11-08 | パタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5984529A (2) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63261836A (ja) * | 1987-04-20 | 1988-10-28 | Nec Corp | 縮小投影露光法によるテ−パ−形成方法 |
| JPH0228923A (ja) * | 1988-07-18 | 1990-01-31 | Sharp Corp | 半導体装置の製造方法 |
| JPH04348030A (ja) * | 1990-07-31 | 1992-12-03 | Gold Star Co Ltd | 傾斜エッチング法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51117136A (en) * | 1975-04-09 | 1976-10-15 | Tokyo Shibaura Electric Co | Plasma etching process |
| JPS5255867A (en) * | 1975-11-04 | 1977-05-07 | Toshiba Corp | Exposure method |
| JPS5775431A (en) * | 1980-10-28 | 1982-05-12 | Fujitsu Ltd | Formation of pattern |
-
1982
- 1982-11-08 JP JP57195558A patent/JPS5984529A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51117136A (en) * | 1975-04-09 | 1976-10-15 | Tokyo Shibaura Electric Co | Plasma etching process |
| JPS5255867A (en) * | 1975-11-04 | 1977-05-07 | Toshiba Corp | Exposure method |
| JPS5775431A (en) * | 1980-10-28 | 1982-05-12 | Fujitsu Ltd | Formation of pattern |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63261836A (ja) * | 1987-04-20 | 1988-10-28 | Nec Corp | 縮小投影露光法によるテ−パ−形成方法 |
| JPH0228923A (ja) * | 1988-07-18 | 1990-01-31 | Sharp Corp | 半導体装置の製造方法 |
| JPH04348030A (ja) * | 1990-07-31 | 1992-12-03 | Gold Star Co Ltd | 傾斜エッチング法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH045260B2 (2) | 1992-01-30 |
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