JPS5986281A - Visible light semiconductor laser - Google Patents
Visible light semiconductor laserInfo
- Publication number
- JPS5986281A JPS5986281A JP19525382A JP19525382A JPS5986281A JP S5986281 A JPS5986281 A JP S5986281A JP 19525382 A JP19525382 A JP 19525382A JP 19525382 A JP19525382 A JP 19525382A JP S5986281 A JPS5986281 A JP S5986281A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- semiconductor laser
- molecular beam
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 239000013078 crystal Substances 0.000 claims abstract description 17
- 239000000956 alloy Substances 0.000 claims abstract description 13
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 4
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 3
- 238000005253 cladding Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 6
- 230000010355 oscillation Effects 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052738 indium Inorganic materials 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 150000002739 metals Chemical class 0.000 abstract description 2
- 239000011574 phosphorus Substances 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000005755 formation reaction Methods 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- ZSBXGIUJOOQZMP-JLNYLFASSA-N Matrine Chemical compound C1CC[C@H]2CN3C(=O)CCC[C@@H]3[C@@H]3[C@H]2N1CCC3 ZSBXGIUJOOQZMP-JLNYLFASSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体素子に関し、特に可視域で発振する半導
体レーザに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device, and particularly to a semiconductor laser that oscillates in the visible range.
近年、半導体レーザは光通信用光源として０８μｍ以上
の赤外波長・頭載のものが開発され実用化されるに至っ
ている。一方、可視域で発振するものとしてＡｌＧａＡ
ｓ ｆ活性層の材料とする半導体レーザが検討され、波
長０．７μｍ近傍での発振に成功している。この材料は
原理的にこれ以上短波長化する事は困難であるため他の
化合物半導体材料の開発が望まれている。この可視光半
導体レーザは、光記録、光計測への応用に特徴があるが
、これらの用途に於て記録媒体の波長感度や計測分解能
の点からも出来るだけ短波長、即ちホトンエネルギーが
大きい方が望ましい。このような短波長で発振可能な材
料の一種に１１−■化合物があるが、禁制帯幅の大きな
材料に於てはｐ ｎ ｔｍ合の形成が困難なため、電流
注入型の半導体レーザは実現されていない。In recent years, semiconductor lasers with infrared wavelengths of 08 μm or more and head mounted semiconductor lasers have been developed and put into practical use as light sources for optical communications. On the other hand, AlGaA is a material that oscillates in the visible range.
Semiconductor lasers that can be used as materials for the sf active layer have been studied, and oscillation at a wavelength of around 0.7 μm has been successfully achieved. Since it is difficult in principle to make this material have a shorter wavelength, the development of other compound semiconductor materials is desired. This visible light semiconductor laser is characterized by its application to optical recording and optical measurement, but in these applications, it is necessary to use the shortest wavelength possible, that is, the one with the highest photon energy, in terms of the wavelength sensitivity of the recording medium and the measurement resolution. is desirable. One type of material that can oscillate at such a short wavelength is the 11-■ compound, but it is difficult to form a pntm combination in materials with a large forbidden band width, so current injection type semiconductor lasers have not been realized. It has not been.
一方、ｐｎ接合形成が容易な材料である■−■化合物と
してｊｎＡＩＧａＰ系混晶が可視元混晶体レーザとして
有望な材料である。この混晶系はＧａ−へｉ’ｒ基板と
して格子談合させてエピタキシャル成長させたもので波
長０．６μｍ近傍の発振が可能となる。しかしこれ以上
さらに短波長化するにはＧａ Ａｓ 基板よりも格子
定数の小さな結晶を基盤とする必要がある。これにはＧ
ａＡｓ基板上に、例えばＧａ入ｓＰ混晶で徐々に格子金
短かくした遷移層を形成し、その上に活性層を形成する
方法も考゛えられる。しかしこの様な方法では遷移層中
に多層の不整合転位が発生することは避けがたいため活
性層中にも相当量の転位が侵入する。この様な転位の存
在はこれまでの半導体レーザで実証された様に急速劣化
の原因となり、実用的な寿命の長いレーザを得る事を妨
げている。On the other hand, jnAIGaP-based mixed crystal is a promising material for a visible mixed crystal laser as a ■-■ compound which is a material in which a pn junction can be easily formed. This mixed crystal system is epitaxially grown by lattice association with Ga as an i'r substrate, and is capable of oscillation at a wavelength of around 0.6 μm. However, in order to further shorten the wavelength, it is necessary to use a crystal having a smaller lattice constant than the GaAs substrate. G for this
It is also conceivable to form a transition layer on an aAs substrate with, for example, a Ga-containing SP mixed crystal whose lattice is gradually shortened, and then form an active layer thereon. However, in such a method, it is unavoidable that multiple layers of mismatched dislocations occur in the transition layer, and a considerable amount of dislocations also invade the active layer. The presence of such dislocations causes rapid deterioration, as has been demonstrated in previous semiconductor lasers, and prevents the production of lasers with a long practical life.
本発明は、この様な欠点を除去し、長寿命でかつ短波長
で発振する可視光半導体レーザを提供することを目的と
する。An object of the present invention is to eliminate such drawbacks and provide a visible light semiconductor laser that has a long life and oscillates at a short wavelength.
本発明の可視光半導体レーザの構成は、ＳｉとＧｅから
なる合金基板上に、Ａｌ、 Ｇａ、 Ｉｎ、 Ａｓ、
Ｐ（Ｄ内の三元素以上の元素で構成される結晶をクラッ
ド層及び活性層として多層状に半導体層を形成させた事
を特徴とする。The visible light semiconductor laser of the present invention has a structure in which Al, Ga, In, As,
P(D) is characterized in that a multilayer semiconductor layer is formed using crystals composed of three or more elements in D as a cladding layer and an active layer.
本発明においては、短波長化するために格子定数の小さ
な基板制料としてＳｉとＧｅの合金を用いている。Ｇａ
Ａｓの格子定数は約５．６５Ａであるが、３ｉとＧｅの
合金ではその組成比によ）約５．４３から約５．６６
Ａまでの範囲で格子定数が変化するためＧａＡｓｊりも
小さな値を取ることができる。In the present invention, an alloy of Si and Ge is used as a substrate material with a small lattice constant in order to shorten the wavelength. Ga
The lattice constant of As is about 5.65A, but for alloys of 3i and Ge it is about 5.43 to about 5.66 (depending on the composition ratio)
Since the lattice constant changes in the range up to A, GaAsj can also take a small value.
この組成比と格子定数との関係はいわゆるベガードの法
則に乗っており、はぼ比例関係にあるため、具成比を制
御することにより所望の格子定数を得１澗ことができる
。この５ｉＧｅ合金はダイヤモンド１結晶構造となって
いるから、これに格子を整合させて亙−■族混晶をエピ
タキシャル成長が可能とらる。また、８ｉＧｅ合金はＡ
Ａ！ＧａＡｓの様に酸化され易くないため、分子線エピ
タキシャル成長法や気相成長法により容易にＩ−Ｖ族を
エピタキシャル成長する事ができる利点がある。さらに
、８ｉＧｅ合金は均一な格子定数を持つのでこれに完全
に整合させた結晶をエピタキシャル成長したときには不
整合転位の発生は起らない。従って従来の様に遷移層に
より格子定数を小さくしたものと異なフ、欠陥の少ない
活性層が出来るため長寿命な半導体レーザができる。The relationship between this composition ratio and lattice constant is based on the so-called Vegard's law, and is approximately proportional, so that a desired lattice constant can be obtained by controlling the specific ratio. Since this 5iGe alloy has a diamond 1 crystal structure, by matching the lattice to this, it is possible to epitaxially grow a ≧-Ⅰ group mixed crystal. Also, the 8iGe alloy is A
A! Since it is not easily oxidized like GaAs, it has the advantage of being able to easily epitaxially grow IV groups by molecular beam epitaxial growth or vapor phase growth. Furthermore, since the 8iGe alloy has a uniform lattice constant, no mismatch dislocations occur when a crystal perfectly matched to the 8iGe alloy is epitaxially grown. Therefore, unlike the conventional structure in which the lattice constant is reduced by a transition layer, an active layer with fewer defects can be formed, resulting in a long-life semiconductor laser.
この５ｉＧｅ合金上に格子整合可能なＩ−Ｖ族半導体と
してはＧａＡｓＰ、ＧａＩｎＰ、ＡＩＩｎＰ、Ａ／Ｇａ
−ＡｓＰ、ＩｎＡＪＧａＰ などがある。これ等の混
晶の内で直接遷移形のものが半導体レーザの活性層とし
て利用できる。例えば、ＳｉＯ，７４ＧｅＯ，２６合金
にＩｎＧａＰｆ活性層、ＡＡＩｎＰをクラッド層として
二重へテロ構造をエピタキシャル成長して形成したレー
ザは、波長が約０．５６μｍで発振する黄色発光が可能
である。The IV group semiconductors that can be lattice matched on this 5iGe alloy include GaAsP, GaInP, AIInP, and A/Ga.
-AsP, InAJGaP, etc. Among these mixed crystals, those of the direct transition type can be used as the active layer of a semiconductor laser. For example, a laser formed by epitaxially growing a double heterostructure with an InGaPf active layer and an AAInP cladding layer on an SiO, 74GeO, 26 alloy can emit yellow light at a wavelength of about 0.56 μm.
次に図面によシ本発明の詳細な説明する。Next, the present invention will be explained in detail with reference to the drawings.
図は本発明の一実施例の断面図である。図中１．１はｎ
形８ｉＧｅ基板、２はｎ形ＡＩＬｎＰ、３はｎ形ＧａＩ
ｎＰ、 ４はＰ形ＡＩＩｎＰ、５はＳｉＯ２膜、６．
７は電極である。これらのエピタキシャル層はＡＡ、Ｉ
ｎ、Ｇａ金属及び燐を高真空中でそれぞれ所定の分ｉｔ
蒸発させ、約７００ ”Ｏに加熱した基板にデポジショ
ンさせる公知の分子線エピタキシャル法により成長が行
なわれる。この活性層３の厚みを約０．１μｍ、 クラ
ッド層２．４を約２μｍ成長させることによシ、発振し
きい値の低いレーザができる。またｎ形層、ｐ形層の形
成も、 ＺｎやＥｅの分子線を用いて成長中にドーピン
グできる。これらの混晶は有機金属を用いた気相成長法
によっても成長できることは明らかであり、分子線法と
同様にガス成分比を制御することにょシ所定の混晶比を
得ることができる。The figure is a sectional view of one embodiment of the present invention. In the figure, 1.1 is n
Type 8iGe substrate, 2 is n-type AILnP, 3 is n-type GaI
nP, 4 is P-type AIInP, 5 is SiO2 film, 6.
7 is an electrode. These epitaxial layers are AA, I
n, Ga metal, and phosphorus in predetermined amounts in high vacuum.
Growth is performed by a known molecular beam epitaxial method in which the active layer 3 is evaporated and deposited on a substrate heated to about 700" O. The active layer 3 is grown to a thickness of about 0.1 μm, and the cladding layer 2.4 is grown to a thickness of about 2 μm. As a result, a laser with a low oscillation threshold can be produced.N-type and p-type layers can also be formed by doping during growth using Zn or Ee molecular beams.These mixed crystals can be formed using organic metals. It is clear that growth can also be achieved by the vapor phase epitaxy method used, and a predetermined mixed crystal ratio can be obtained by controlling the gas component ratio, similar to the molecular beam method.
この混晶材料は前記の組合せ以外にも前述の各種混晶に
よっても可視光学導体レーザの実現が可能であるため、
５ｉＧｅ合金を基板とすることにより波長０．５６から
０．８９μｍの範囲で発振するレーザが製作できる。In addition to the combinations described above, this mixed crystal material can also be used to realize a visible optical conductor laser by using the various types of mixed crystals mentioned above.
By using a 5iGe alloy as a substrate, a laser that oscillates in the wavelength range of 0.56 to 0.89 μm can be manufactured.
以上の様に、本発明によれば、従来の半導体レーザ基板
と異なる８ｉＧｅ合金を基板として用いることによフ欠
陥の少ない長寿命な可視光半導体レーザが得られる。As described above, according to the present invention, a long-life visible light semiconductor laser with few defects can be obtained by using an 8iGe alloy as a substrate, which is different from conventional semiconductor laser substrates.
図は本発明の一実施例の断面図である。図において、
１・・・・・・８ｉＧｅ合金、２．４・・・・・・クラ
ッド層、３・・・・・・活性層、５・・・・・・８ｉ０
２．６．７・旧・・電極、である。
特許出願人 工業技術院長The figure is a sectional view of one embodiment of the present invention. In the figure, 1...8iGe alloy, 2.4...cladding layer, 3...active layer, 5...8i0
2.6.7 Old... Electrode. Patent applicant: Director of the Agency of Industrial Science and Technology
Claims (1)
ｎ。 Ａｓ、Ｐの内の三元素以上の元素で構成される結晶をク
ラッド層及び活性層として、多層状に半導体音を形成し
た事を特徴とする可視光半導体レーザ。[Claims] Al, Ga, I on an alloy substrate made of Si and Ge.
n. A visible light semiconductor laser characterized in that a multilayer semiconductor laser is formed using a crystal composed of three or more of As and P as a cladding layer and an active layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19525382A JPS5986281A (en) | 1982-11-09 | 1982-11-09 | Visible light semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19525382A JPS5986281A (en) | 1982-11-09 | 1982-11-09 | Visible light semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5986281A true JPS5986281A (en) | 1984-05-18 |
Family
ID=16338052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19525382A Pending JPS5986281A (en) | 1982-11-09 | 1982-11-09 | Visible light semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5986281A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0439988A (en) * | 1990-06-05 | 1992-02-10 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting device |
-
1982
- 1982-11-09 JP JP19525382A patent/JPS5986281A/en active Pending
Non-Patent Citations (2)
| Title |
|---|
| ELECTONICS * |
| IBM TECHNICAL DISCLOURE BULLETIN * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0439988A (en) * | 1990-06-05 | 1992-02-10 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting device |
| US5164950A (en) * | 1990-06-05 | 1992-11-17 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device comprising a sige single crystal substrate |
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