JPS5990628A - Plasma CVD equipment - Google Patents
Plasma CVD equipmentInfo
- Publication number
- JPS5990628A JPS5990628A JP20076682A JP20076682A JPS5990628A JP S5990628 A JPS5990628 A JP S5990628A JP 20076682 A JP20076682 A JP 20076682A JP 20076682 A JP20076682 A JP 20076682A JP S5990628 A JPS5990628 A JP S5990628A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- discharge electrode
- electrode
- base material
- discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005268 plasma chemical vapour deposition Methods 0.000 title claims description 7
- 239000000463 material Substances 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 31
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052786 argon Inorganic materials 0.000 abstract description 3
- -1 diborane Chemical compound 0.000 abstract description 2
- 239000008246 gaseous mixture Substances 0.000 abstract 2
- 239000010408 film Substances 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 108091008695 photoreceptors Proteins 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は真空排気系内に放電電極、ガス導入系、排気口
、ならびに薄膜を形成するための基材を有するプラズマ
ＣＶＤ装置において、中央に排気口を、そしてその周囲
に放電市１極、ガス導入系、および基材を西装置するこ
とによシ、Ｎ膜デバイス、たとえば、静電複写用の感光
ドラム相互間の膜厚卦よび膜質の均一化をはかったプラ
ズマＣＶＤ装置に関する。Detailed Description of the Invention The present invention provides a plasma CVD apparatus having a discharge electrode, a gas introduction system, an exhaust port, and a base material for forming a thin film in a vacuum exhaust system. By installing one electrode in the discharge market, the gas introduction system, and the base material in the west, N-film devices, for example, plasma which aims to make the film thickness and film quality uniform between photosensitive drums for electrostatic copying, are produced. Regarding CVD equipment.
近年アモルファスシリコンを中心とし、プラズマＣＶＤ
法による薄膜デバイスの研究が盛んである。その中でと
ぐに複写機用感光体は注目されているデバイスの一つで
ある。In recent years, mainly amorphous silicon, plasma CVD
Research into thin film devices using this method is active. Among these devices, photoconductors for copying machines are one of the devices that is attracting attention.
第１図は従来のアモルファスシリコン（以下ではα−ｓ
７とかぐ）感光体製造装置の１例で放電電極、感光ドラ
ム基材、排気口との関係を示した図であシ、感光ドラム
の中心軸と垂直に交わる面で切断した場合の断面をも示
している。Figure 1 shows conventional amorphous silicon (hereinafter α-s
7) This is a diagram showing the relationship between the discharge electrode, the photosensitive drum base material, and the exhaust port in an example of a photoconductor manufacturing device. is also shown.
同図において１０１は感光ドラム基材、１０２は放電電
極、１０３は放電電極の中空部分、１０４目ガスの放出
口、１０５はガス導入管、１０６は排気口、１０７は排
気用のパイプである。In the figure, 101 is a photosensitive drum base material, 102 is a discharge electrode, 103 is a hollow part of the discharge electrode, 104 is a gas discharge port, 105 is a gas introduction pipe, 106 is an exhaust port, and 107 is an exhaust pipe.
真空チャンバー内に配置されたこのような系でガス導入
管１０５から、α−ｓ７作製に必要なガス、すなわち水
素、アルゴン、モノシラン、メタンそしてジボラン等の
混合ガスを放電電極の空間部分１０３へと導入する。こ
のガスは多数の放出Ｄ １０４から感光ドラム基材へと
放出される。このとき、放電電極１０２を感光ドラム基
材】０大との間で高周波放電をおこすと、モノシラン、
メタン、ジボランガスが分解され、水素、炭素、ホウ素
を含むａ−ｓ６膜がドラム基材１０１の表面」二に堆積
する。ドラム基材を回転させて膜厚の均一性をはかる。In such a system placed in a vacuum chamber, a gas necessary for producing α-s7, that is, a mixed gas of hydrogen, argon, monosilane, methane, diborane, etc., is introduced into the space 103 of the discharge electrode from the gas introduction pipe 105. Introduce. This gas is discharged from multiple discharges D 104 to the photosensitive drum substrate. At this time, when high frequency discharge is caused between the discharge electrode 102 and the photosensitive drum base material], monosilane,
Methane and diborane gases are decomposed, and an AS6 film containing hydrogen, carbon, and boron is deposited on the surface of the drum base material 101. The drum base material is rotated to measure the uniformity of the film thickness.
残シのガスは排気口１０６．および排気用パイプ１０７
を通してポンプで排気される。The remaining gas is removed from the exhaust port 106. and exhaust pipe 107
It is pumped out through the
このような装置で多数の感光ドラムを作製する場合、ド
ラム間で膜厚の均一性が得られないという欠点を有して
いる。すなわち、それぞれのドラムから排気用パイプ１
０７までの距離、ならびにガス尋人管】０５１での距離
が異なるため、ドラム近傍を流れるガス流量に差ができ
、それが膜厚の差となって表われる。When producing a large number of photosensitive drums using such an apparatus, there is a drawback that uniformity in film thickness cannot be obtained among the drums. That is, exhaust pipe 1 from each drum
Since the distances to 07 and the distances at 051 are different, there is a difference in the gas flow rate near the drum, which appears as a difference in film thickness.
第１図に示すような５木取）の装置の場合、通常の作製
条件で感光ドラムを作製すると、中心に置かれた感光ド
ラムに対して両端の感光ドラムの膜厚は約０．８５倍で
ある。このように膜厚のロット内のばらつきが大きいこ
とは、帯雷、電位がばらつくことになシ、量産上大きな
問題である。In the case of the device shown in Figure 1 (5Kidori), when photosensitive drums are manufactured under normal manufacturing conditions, the film thickness of the photosensitive drums at both ends is approximately 0.85 times that of the photosensitive drum placed in the center. It is. This large variation in film thickness within a lot is a major problem in mass production, as it also causes variations in lightning charge and potential.
本発明はかかる欠点を除去したものであって、その目的
とするところは、ロット内の感光ドラムの膜厚と膜質の
均一性をはかることにある。The present invention eliminates such drawbacks, and its purpose is to measure the uniformity of film thickness and film quality of photosensitive drums within a lot.
第２図は本発明の感光体製造装置における放電電極、感
光ドラム基材および排気口の関係を示した図である。FIG. 2 is a diagram showing the relationship among the discharge electrode, the photosensitive drum base material, and the exhaust port in the photosensitive member manufacturing apparatus of the present invention.
同図にお込て、２０１は感光ドラム暴利、２０２は放電
電極、２０３は真空チャンバ、２０４はガス放出口、２
０５はガス導入管、２０６は排気［’：ｌ、２０７は排
気用のパイプ、２０８は放電１電極のわれ目である。In the figure, 201 is a photosensitive drum, 202 is a discharge electrode, 203 is a vacuum chamber, 204 is a gas discharge port, 2
05 is a gas introduction pipe, 206 is an exhaust [':l, 207 is an exhaust pipe, and 208 is the corner of the first discharge electrode.
この装置において、モノシラン、ジボラン、メタン、水
素、そしてアルゴンの混合ガスがガス導入管２０５を通
って放電電極２０２に導入される。In this device, a mixed gas of monosilane, diborane, methane, hydrogen, and argon is introduced into the discharge electrode 202 through the gas introduction tube 205.
放電電極２０２は２枚の金属板によって中空部分が作ら
れている。この中空部分に導入された混合ガスは電極の
内側面に設けられたガス放出口２０４からドラム基材２
０１に向っ゛〔放出される。The discharge electrode 202 has a hollow portion made of two metal plates. The mixed gas introduced into this hollow portion is released from the drum base material 2 through a gas discharge port 204 provided on the inner surface of the electrode.
It is emitted toward 01.
さらにこのガスは放電電極のわれ目２０８から排気口２
０６によって排気され、排気用のパイプ２０７を通って
ポンプへと導かれる。Furthermore, this gas flows from the gap 208 of the discharge electrode to the exhaust port 2.
06 and is led to the pump through an exhaust pipe 207.
との状態で感光ドラム基材２０１と放電電極２０２との
間で高周波放電を起こすと、モノシランガス、ジボラン
ガス、そしてメタンガスが分解され感光ドラム基材２０
１の表面上に、炭素、水素そして硼素を含んだａ−８ｉ
Ｍが形成される。When high-frequency discharge is caused between the photosensitive drum base material 201 and the discharge electrode 202 in this state, monosilane gas, diborane gas, and methane gas are decomposed and the photosensitive drum base material 20
a-8i containing carbon, hydrogen and boron on the surface of 1
M is formed.
感光ドラム内の膜厚卦よびＭ質の均一性を得るためにド
ラム基材は円柱の軸を中心にしてデポジション時に回転
させる。In order to obtain uniformity of film thickness and M quality within the photosensitive drum, the drum base material is rotated about the axis of the cylinder during deposition.
第２図かられかるように、ガス放出に２０４から排気口
２０６までの相対位置関係はどの放電電極に関しても′
同じである。したがって、それぞれの放電電極から放出
されるガス流に対するインピーダンスはいずれも等しく
、ガスの流れ方も等しい。As can be seen from Fig. 2, the relative positional relationship from the gas discharge port 204 to the exhaust port 206 is '
It's the same. Therefore, the impedance to the gas flow discharged from each discharge electrode is the same, and the way the gas flows is also the same.
この装置において混合ガスの流量を各電極毎に２００
ＣＣ／ｍｉｎ。とし、各電極において、５００Ｗのパワ
ーで約４時間高周波放電させた。得られた感光ドラムの
ａ−８ｊ層の厚さを測定すると、膜厚の１番厚い感光ド
ラムでは膜厚の平均値が２１．２μ・ｍ、 、 １番薄
いもので１９．９μｍであった。すなわち、最少値と最
大値の比は０．９４であった。１０回の実験では０．９
３〜０．９７であシ、従来の０．８５に比べて、ロット
内のばらつきは半分以下に改善された。また膜質につい
ても帯電電位の測定からばらつきが半減さｈていること
がわかった。In this device, the flow rate of the mixed gas was set at 200 for each electrode.
CC/min. High-frequency discharge was performed at each electrode at a power of 500 W for about 4 hours. When the thickness of the a-8j layer of the obtained photosensitive drum was measured, the average thickness of the thickest photosensitive drum was 21.2 μm, and the thinnest one was 19.9 μm. . That is, the ratio of the minimum value to the maximum value was 0.94. 0.9 for 10 experiments
It was 3 to 0.97, and compared to the conventional value of 0.85, the intra-lot variation was improved to less than half. Furthermore, with regard to film quality, it was found that the variation in charging potential was reduced by half.
このように本発明はプラズマＣＶＤ装置において膜厚お
よび膜質のロット内のばらつきを従来の約半分にするも
のであシ、量産装置として非常に有効なものである。As described above, the present invention reduces the intra-lot variation in film thickness and film quality by about half of the conventional one in a plasma CVD apparatus, and is very effective as a mass production apparatus.
また上述の説明ではσ、−ｓ６感光体について説明して
きたが、本発明の価値は必ずしもα−８ｉ感光体に限る
ものではなく、例えば、５ｈｏ２や５ｚ３Ｎ４膜のよう
ガ絶縁性薄膜の製造にも利用できるものであシ、本発明
の応用範囲は十分広い。Furthermore, although the above explanation has been made regarding the σ, -s6 photoreceptor, the value of the present invention is not necessarily limited to the α-8i photoreceptor. As long as it is available, the scope of application of the present invention is wide enough.
第１図は従来のａ−Ｂｉ感光体製造装置、第２図は本発
明の感光体製造装置における放電電極、感光ドラム基利
および排気口の関係を示した図である。
２０１−・感光ドラム基材
２０２・・放電電極
２０３・・真空チャンバ
２０４・・ガス放出口
２０５・・ガス導入管
２０６・・排気口
２０７・・排気用のパイプ
２０８・・放電電極のわれ目
以 上
出願人 株式会社諏訪精工舎FIG. 1 is a diagram showing a conventional a-Bi photoconductor manufacturing apparatus, and FIG. 2 is a diagram showing the relationship among a discharge electrode, a photoconductor drum base, and an exhaust port in the photoconductor manufacturing apparatus of the present invention. 201-・Photosensitive drum base material 202・・Discharge electrode 203・・Vacuum chamber 204・・Gas discharge port 205・・Gas introduction pipe 206・・・Exhaust port 207・・Exhaust pipe 208・・・Beyond the edge of the discharge electrode Applicant: Suwa Seikosha Co., Ltd.
Claims (1)
、ならびに薄膜を形成するための基材を有するプラズマ
ＣＶＤ装置において、真空室内の中央に排気口を有し、
その周囲に放電電極、ガス導入系、および基材を配置し
たことを特徴と干るプラズマＣＶＤ装置。 （２＋放電電極の一部がガス放出用の開口を有し、がっ
、放電電極が基材を囲む形状をなしたことを特徴とする
特許請求の範囲第１項記載のプラズマＣＶＤ装置。[Claims] (11Jc A plasma CVD apparatus having a discharge electrode, a gas introduction system, an exhaust port, and a base material for forming a thin film in an air exhaust system, having an exhaust port in the center of the vacuum chamber,
A plasma CVD device characterized by having a discharge electrode, a gas introduction system, and a base material arranged around it. (2+) A plasma CVD apparatus according to claim 1, wherein a part of the discharge electrode has an opening for gas discharge, and the discharge electrode has a shape that surrounds the base material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20076682A JPS5990628A (en) | 1982-11-16 | 1982-11-16 | Plasma CVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20076682A JPS5990628A (en) | 1982-11-16 | 1982-11-16 | Plasma CVD equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5990628A true JPS5990628A (en) | 1984-05-25 |
Family
ID=16429811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20076682A Pending JPS5990628A (en) | 1982-11-16 | 1982-11-16 | Plasma CVD equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5990628A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS616278A (en) * | 1984-06-20 | 1986-01-11 | Canon Inc | Plasma CVD equipment |
-
1982
- 1982-11-16 JP JP20076682A patent/JPS5990628A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS616278A (en) * | 1984-06-20 | 1986-01-11 | Canon Inc | Plasma CVD equipment |
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