JPS599635A - electro-optical device - Google Patents

electro-optical device

Info

Publication number
JPS599635A
JPS599635A JP57118256A JP11825682A JPS599635A JP S599635 A JPS599635 A JP S599635A JP 57118256 A JP57118256 A JP 57118256A JP 11825682 A JP11825682 A JP 11825682A JP S599635 A JPS599635 A JP S599635A
Authority
JP
Japan
Prior art keywords
liquid crystal
optical device
display device
crystal display
pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57118256A
Other languages
Japanese (ja)
Other versions
JPH0458008B2 (en
Inventor
Sunao Oota
直 太田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP57118256A priority Critical patent/JPS599635A/en
Publication of JPS599635A publication Critical patent/JPS599635A/en
Publication of JPH0458008B2 publication Critical patent/JPH0458008B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1365Active matrix addressed cells in which the switching element is a two-electrode device

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  • Physics & Mathematics (AREA)
  • Liquid Crystal (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明は液晶を用いた電気光学装置に関する。[Detailed description of the invention] The present invention relates to an electro-optical device using liquid crystal.

さらに詳しくは液晶表示装置に非線型素子を組合せ表示
特性を改良した′電気光学装置に関する。
More specifically, the present invention relates to an electro-optical device which combines a liquid crystal display device with a non-linear element to improve display characteristics.

近年、液晶表示装置の応用が進み、その消費電力の少な
いことあるいは表示部が薄型化出来るなどの利点を生か
して腕時計、電卓などの他に小型電子機器用の表示装置
として大垣に用いられるようになった。
In recent years, the application of liquid crystal display devices has progressed, and by taking advantage of their low power consumption and ability to make the display section thinner, they have come to be used as display devices for small electronic devices in addition to wristwatches and calculators. became.

この液晶表示装置の応用分野をさらに拡げるためには表
示容置の増大が必要であるが従来のTN型液晶表示装置
では電圧−コントラスト特性の立上りがあまり急峻でな
いため、マルチプレックスの桁数を増すと非選択点およ
び牛選択点と選択点とに印加される実効電圧に差が少な
くなってクロストークを生じるため数士桁の多桁駆動が
限界であった。このような欠点を避けるための一方法と
して非線型素子あるいはスイッチング素子を液晶表示装
置に組合せたマ) IJクス型の装置が考えられアモル
ファスシリコンやポリシリコンあるいは化合物牛纒体な
どを用いたTPTやダイオード。
In order to further expand the field of application of this liquid crystal display device, it is necessary to increase the display capacity, but in conventional TN type liquid crystal display devices, the rise of voltage-contrast characteristics is not very steep, so it is necessary to increase the number of multiplex orders. The difference between the effective voltages applied to the non-selected point, the cow selected point, and the selected point becomes small, resulting in crosstalk, which limits the ability to drive multiple digits. One way to avoid these drawbacks is to use an IJ type device that combines non-linear elements or switching elements with a liquid crystal display device, as well as TPT and IJ type devices that use amorphous silicon, polysilicon, or compound capacitors. diode.

酸化亜鉛などを用いたバリスタを用いるなど種々の検討
がなされてきた。
Various studies have been made, including the use of varistors made of zinc oxide or the like.

このような非+1iiJ型素子の中で特開昭52−14
9090&こおいて述べられている金属−絶縁体−金属
(getal −,4nsu、1ator −peta
l略してMIM)構造を有する非線型素子(以下M工M
i子と呼ぶ)は素子構成が簡単であるため、他の非線型
素子にくらべ製造工程が短かく素子設計も容易であると
いった利点を有している。
Among such non-+1iiJ type elements, JP-A-52-14
9090 & metal-insulator-metal (getal-, 4nsu, 1ator-peta
A non-linear element (hereinafter referred to as MIM) having a structure (abbreviated as MIM)
Since the device configuration is simple, the device has the advantage that the manufacturing process is shorter and the device design is easier than other nonlinear devices.

このM工M素子はトンネル効果、ショットキ効果あるい
はプール・フレンケル効果などによって′電流か流れる
と考えられ第1図に示すように非巌!観な電圧−電流特
性を示す。
It is thought that current flows in this M element due to the tunnel effect, Schottky effect, Poole-Frenkel effect, etc., and as shown in Figure 1, there is no electricity! It shows a typical voltage-current characteristic.

絶縁体としてはA l 、 T a 、 N b 、 
T i 、 S i、MO,W、Hf等の酸化物、ある
いは窒素をドープした前記金属の酸化物、カルコゲナイ
ドガラス等の無機材料、さらにはポリイミド樹脂等の有
機材料も使用することができる。
Insulators include Al, Ta, Nb,
Oxides such as Ti, Si, MO, W, and Hf, oxides of the metals doped with nitrogen, inorganic materials such as chalcogenide glass, and even organic materials such as polyimide resin can be used.

+jfJ m己絶縁膜を金属でサンドインチすればM工
M構造になり、この金属としてはljJ He金属及び
N1、Or、Auあるいはそれらの合金等、あるいは5
n02.■”203 e工To(工n 20 、+Sn
O。
+jfJ If the self-insulating film is sandwiched with a metal, an M structure will be obtained, and this metal may be ljJ He metal, N1, Or, Au, or their alloys, or 5
n02. ■”203 eTo(engine n 20, +Sn
O.

)等もしくは極く薄いOr、Au等の金属による透明導
電性薄膜を用いることができる。
) or an extremely thin transparent conductive thin film made of metal such as Or or Au can be used.

M工IA素子に電圧を印加した場合、絶M膜の厚さGこ
よって伝導機構が異なり50〜10oXではトンネル効
果、ioo〜1oooXではショットキ効果及びプール
・フレンクル効果が優位を占めると吾われでいる。本発
明の目的である液晶表示装置とM工M素子の組合せでは
液晶の駆動方法との兼ね合いから、プール・フレンヶル
効果を示す領域を利用するのが望ましいと思われ、その
領域では電圧−′電流特性はプール・フレンヶル式%式
%)(1) このM工M素子を組込んだ液晶表示装置を、通常のマト
リクス型液晶表示装置の駆動に用いられている電圧平均
化法で駆動すると、M工M素子の非線型性によって実録
に液晶に印加される0N10FF実効値比が、電圧平均
化法自体の0N10FF実効値比よりも大きくなり、よ
り多桁のマトリクス駆動が可能となる。M工M素子を液
晶表示装置と組合せた場合、一画素分の等価回路は第2
図に示すように容量分01JIMと非線型抵抗外RMI
Mとが並列になったM工M素子1と、容it!(:!L
(+  と抵抗外RLOとが並列になった液晶部分2が
直列に接続されていると考えることができる。
When a voltage is applied to an M-type IA element, the conduction mechanism differs depending on the thickness G of the absolute M film, and we believe that the tunnel effect is dominant at 50 to 100X, and the Schottky effect and Poole-Frenkle effect are dominant at ioo to 100X. There is. In the combination of a liquid crystal display device and an M element, which is the object of the present invention, it is considered desirable to use a region exhibiting the Poole-Frengal effect in view of the liquid crystal driving method, and in that region, the voltage -' current The characteristics are determined by the Poole-Frenggal formula (%) (1) When a liquid crystal display device incorporating this M element is driven using the voltage averaging method used to drive a normal matrix type liquid crystal display device, the M Due to the non-linearity of the M element, the 0N10FF effective value ratio applied to the liquid crystal becomes larger than the 0N10FF effective value ratio of the voltage averaging method itself, making it possible to drive a matrix with more digits. When the M element is combined with a liquid crystal display device, the equivalent circuit for one pixel is the second
As shown in the figure, the capacitance 01JIM and the nonlinear resistance RMI
M element 1 in parallel with M, and it! (:!L
It can be considered that the liquid crystal part 2 in which + and the external RLO are connected in series.

そしてこの両端に′1u圧を印加するわけであるが実際
に液晶部分2に印加される実効電圧はM工M素子1の時
定数、液晶部分2の時定数及びMIM素子1の容は分O
MIMと液晶部分2の容量分OLOとの比a x、 o
 / OM I yとの組合せで定まり、液晶部分2の
時短数及びOL O/ OM r Mの値が大きく、M
工M*子1の時定数が適当な値の時実効′也圧は最も大
きくなる。もち論、M工M素子1の非線型性が大きい程
マトリクス駆動の桁数は多くとれるようになる。
A pressure of '1u is applied to both ends of this, but the effective voltage actually applied to the liquid crystal section 2 is determined by the time constant of the M element 1, the time constant of the liquid crystal section 2, and the capacity of the MIM element 1.
Ratio between MIM and OLO, which is the capacity of liquid crystal part 2, a x, o
/ OM I y, the time saving number of liquid crystal part 2 and the value of OL
When the time constant of the motor M*element 1 is at an appropriate value, the effective pressure becomes the largest. Naturally, the greater the nonlinearity of the M element 1, the greater the number of digits of matrix drive.

ここで従来のM工M素子−のMI Mを説明すると、例
えば第6図及び第4図に示すように、ガラス基板3を酸
化膜4で破着しエッチストップとした俊金属薄族5を形
成、所望の形状に金属薄膜5をパターニングした後表面
に絶縁体薄膜6を形成する。さらに金属薄Mをつけてパ
ターニングしMIM素子の対向電極7とする。この時M
工M素子の面積は金属電極5と対向電極7が互いに重な
り合う部分の面積となる。液晶表示装置とするには次に
透明導電性薄膜により画素電極8を形成し、表面に液晶
配向層を形成して一定の間隙を保たせた対向基板でセル
となし、その間隙に液晶を封入し偏光板を貼り付けてT
N液菖表示装置とする。
Here, to explain the MIM of the conventional M process M element, for example, as shown in Figs. After forming and patterning the metal thin film 5 into a desired shape, an insulator thin film 6 is formed on the surface. Further, a thin metal M is applied and patterned to form the counter electrode 7 of the MIM element. At this time M
The area of the M element is the area where the metal electrode 5 and the counter electrode 7 overlap each other. To create a liquid crystal display device, next, pixel electrodes 8 are formed using a transparent conductive thin film, a liquid crystal alignment layer is formed on the surface, a counter substrate is formed with a constant gap maintained, and a cell is formed, and liquid crystal is sealed in the gap. Then paste the polarizing plate and
It is an N liquid irises display device.

このような構設のM工M素子を用いてマトリクス型液シ
ム表示装置を作ろうとすると、従来マトリクス型液晶表
示装置では0.3〜0.5 mmピッチの画素寸法が多
く使われており、このような寸法の画素に合せたM工M
素子の寸法は3〜6μm角といった寸法になる。現状の
フォトリングラフ技術ではこの6〜6μγn角という寸
法領域はLSIとVI’3工の境界領域であり、さらに
マトリクス型の表示装置Mということでその表示部寸法
は5〜10cmという大ぎさになりかなりの面積部分に
サブミクロン領域の寸法を持つ素子を形成する必要が生
じかなりの困蝋を伴う。またざらに微小寸法の画素を持
つマトリクス型液晶表示装置を作ろうとする場合には完
全にVLSI用の技術を用いなければならずコスト上望
ましくない。
When trying to make a matrix type liquid crystal display device using M elements with such a structure, conventional matrix type liquid crystal display devices often use pixel dimensions of 0.3 to 0.5 mm pitch. M process M that matches the pixel size like this
The dimensions of the element are 3 to 6 μm square. In the current photoringraph technology, this dimension region of 6 to 6 μγn angle is the boundary region between LSI and VI'3, and since it is a matrix type display device M, the display part size is as large as 5 to 10 cm. It is necessary to form elements having dimensions in the submicron region over a fairly large area, which involves considerable difficulty in soldering. Furthermore, if a matrix type liquid crystal display device having pixels of a very small size is to be manufactured, VLSI technology must be used completely, which is not desirable in terms of cost.

本発明は新規なM工M素子の製造方法を考案することに
より、最小寸法が故10μm&!wのフォトリングラフ
エ稈で倣小面積のM工M素子を製造uJ能となし、必要
な露光装置の等級を下げることによって製造コストの低
下を図るものである。
In the present invention, by devising a new manufacturing method of M element, the minimum dimension is 10 μm &! It is possible to manufacture an M element with a small area by using the photorin graph culm of W, and to lower the manufacturing cost by lowering the grade of the necessary exposure equipment.

以下、実bui例によって本発明を説明する。Hereinafter, the present invention will be explained using a practical example.

実施例1 パイレックス、ガラス基板9上に1000〜5000X
のタンタルfan10fニスバッタリングによって形成
し所定の形状にパターニングする。
Example 1 Pyrex, 1000-5000X on glass substrate 9
It is formed by tantalum fan 10f varnish battering and patterned into a predetermined shape.

次にクエン酸水浴液中で陽極順化を行ないタンタル薄j
換表面に酸化膜11を形成する〔第5図(a)〕。
Next, the anode was acclimatized in a citric acid water bath, and the tantalum thin film was
An oxide film 11 is formed on the exposed surface [FIG. 5(a)].

次(こ、IT O(I it 2Os +S n O2
、)m IN 12を基根全面に形成した仮、ネガ形フ
ォトレジスト16を塗布しブレベークを行なう。そして
パイレックスガラス基板9裏側より露光を行なう〔第5
図(b)〕。現像を行なうと第5図(C)のようになり
、ボストベーク後、工TO#膜12をエツチングし、レ
ジスト13を除去すると第5図(d)のようになる。さ
らに必要な画素14の形状に工TOIJJi膜(12)
をエツチングずれば、タンタル薄)M 10 oタンタ
ル薄膜10表面の酸化膜11及び画素′電極14とでM
工MJr#造が完成し、第6図のようになる。
Next(ko, IT O(I it 2Os +S n O2
, ) m IN 12 formed on the entire surface of the base, a temporary negative photoresist 16 is applied and a blebake is performed. Then, exposure is performed from the back side of the Pyrex glass substrate 9 [fifth
Figure (b)]. After development, the result is as shown in FIG. 5(C), and after boost baking, the TO# film 12 is etched and the resist 13 is removed, as shown in FIG. 5(d). Furthermore, the shape of the required pixel 14 is modified using the TOIJJi film (12).
If the tantalum thin film 10 is etched, the oxide film 11 on the surface of the tantalum thin film 10 and the pixel electrode 14 will become M
The construction of MJr# is completed and looks like the one shown in Figure 6.

M工M素子のrnj檀は絶縁膜11のテーパ一部の長さ
と画素′電極14の幅で決定される。
The length of the M element is determined by the length of the tapered part of the insulating film 11 and the width of the pixel' electrode 14.

このM工M素子及び画素電極14を形成したパイレック
スガラス基板9表面Gこポリイミド(ηl脂を塗布・焼
成し綿布でラビングすることによって液晶配向処理を施
す。別にストライプ状の透明′電極16を形成し、ポリ
イミド樹脂とラビングによって液晶配向処理を施したパ
イレックスガラス対向基板17を用意し、5〜20μm
の間隙を保って接着し液晶18を封入する。この時、液
晶分子が上下の基&9117間で約90度ねじられる様
ラビングしておく。この液晶セルの外側に偏光ll1l
IIを液晶の配向状態に合わせて偏光板19,20を配
lit、TN型液晶表示装置とする。→第7図以上の様
をこして作った電気光学装置の等価回路は第8図の様に
なる。
The surface of the Pyrex glass substrate 9 on which the M elements and pixel electrodes 14 are formed is coated with polyimide (ηl resin), fired, and rubbed with a cotton cloth to perform a liquid crystal alignment treatment. Separately, striped transparent electrodes 16 are formed. Then, prepare a Pyrex glass counter substrate 17 that has been subjected to liquid crystal alignment treatment by rubbing with polyimide resin, and
The liquid crystal 18 is sealed while maintaining the gap. At this time, rubbing is performed so that the liquid crystal molecules are twisted approximately 90 degrees between the upper and lower groups &9117. Polarized light is applied to the outside of this liquid crystal cell.
The polarizing plates 19 and 20 are arranged according to the alignment state of the liquid crystal, forming a TN type liquid crystal display device. →Figure 7 The equivalent circuit of the electro-optical device made through the above steps is shown in Figure 8.

実施例2 実施例1とはば同様の製造工程であるが、裏面から露光
する時に第9図(α)に示すように光を斜方から入射さ
せる。するとネガレジスト13が方向性を持って感光し
、現像によって第9図(b)に示すような形状になり、
エツチング及びレジスト除去後の工T O7tilN 
12の形状は第9図(C)の…i +mi形状、第10
図に平向形状を示すようになる。即ち第10図左右方向
の隣り合うタンタルリード部10 、10’及び画素電
極となるITO薄IN 12 、12 ’は電気的に分
離される。そのため、第11図に示ずような画素14,
14’をフォトエツチングで形成する際には工TO薄膜
12.12′を上F方向に分離するだけで良くなり、第
12図に示すように線状(こレジスト21を形成し、工
ToQ膜12をエツチングすればM工M素子及び画素′
電極14が形成される。以後は実施例1と同様にして電
気光学装置とする。
Example 2 The manufacturing process is the same as in Example 1, but when exposing from the back side, light is incident obliquely as shown in FIG. 9 (α). Then, the negative resist 13 is exposed to light with directionality, and by development, it takes on the shape shown in FIG. 9(b).
Process after etching and resist removal
The shape of 12 is the...i + mi shape of Figure 9 (C), the 10th shape
The figure shows the flat shape. That is, the tantalum lead parts 10 and 10' which are adjacent in the left-right direction in FIG. 10 and the ITO thin INs 12 and 12' which become pixel electrodes are electrically separated. Therefore, the pixel 14 as shown in FIG.
When forming 14' by photo-etching, it is sufficient to simply separate 12' into the upper F direction, and as shown in FIG. By etching 12, the M element and the pixel'
Electrode 14 is formed. Thereafter, the electro-optical device is manufactured in the same manner as in Example 1.

以上説明したように従来のM工M素子の製造工程では数
μm幅の精度でフォトエツチングを行なわなければなら
なかったのに対し、本発明の方法を用いれば数10μm
程度のフォトエツチングが出来れば良く、高精度のマス
クアライナを用いることなしにM工M素子と画素′α極
を形成することが可能で、フォトエツチング工程におけ
るNnnススF低下させることが出来る。
As explained above, in the conventional M process and M element manufacturing process, photoetching had to be carried out with an accuracy of several micrometers in width, whereas with the method of the present invention, photoetching must be performed with an accuracy of several tens of micrometers.
It is only necessary to perform photoetching of a certain degree, and it is possible to form the M element and the pixel 'α pole without using a high-precision mask aligner, and it is possible to reduce the Nnn soot F in the photoetching process.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はM工Mg子の非線型特性を示す。 第2図はMIM素子と液晶を組合セた場合の等価回路を
示す。 第6図は従来のM工M素子の断rmr及び見取図。 第4図は同じ〈従来のM工M素子と一画素の配置を示す
平面図である。 第5図は本兄明におけるM工M素子の製造工程の説明図
である。 第6図は本りdす」実施例1による液晶表示装置画素部
分の図であり第7図はその液晶表示装置の断101図で
ある。 第8図は実施例1のマトリクス型、液晶表示装置の等価
回路である。 第91Δから第12図は実施例2における製造工柘!X
fr:説明する図である。 以  上 用願人 林式会社瞠訪精工告 代理人 弁理士 最上  務 ’rtS1図 第2図 2153図 第4図 (d) 第5図 ill 第6図 第7図 第8図 (ぴ) (0ン ・、′S9図 第11トI
FIG. 1 shows the nonlinear characteristics of Mg alloy. FIG. 2 shows an equivalent circuit when an MIM element and a liquid crystal are combined. FIG. 6 is a cross section rmr and a sketch of a conventional M element. FIG. 4 is a plan view showing the arrangement of the same conventional M element and one pixel. FIG. 5 is an explanatory diagram of the manufacturing process of the M element of the present invention. FIG. 6 is a diagram of a pixel portion of a liquid crystal display device according to the first embodiment, and FIG. 7 is a cross-sectional view of the liquid crystal display device. FIG. 8 is an equivalent circuit of the matrix type liquid crystal display device of Example 1. Figures 91Δ to 12 are manufacturing steps in Example 2! X
fr: Diagram for explanation. (0) , 'S9 Figure 11 To I

Claims (1)

【特許請求の範囲】 1、 複数の表示画素を有し、該表示画素の各々に非線
形素子を結合した電気光学装置において、該非線形素子
が金属−絶縁膜−透明導電膜構造を有し、透明基板上へ
基板裏面からの自己整合工程をきんだ工程で製造される
ことを特徴とする血気光学装置iM。 2、 基板裏面からの自己整合工程において、基板Gこ
対し斜方から露出することを特徴とする特許11〜求の
範囲第1項記載の血気光学装置。
[Claims] 1. An electro-optical device having a plurality of display pixels and a non-linear element coupled to each of the display pixels, wherein the non-linear element has a metal-insulating film-transparent conductive film structure and is transparent. A blood optical device iM characterized in that it is manufactured by a process that includes a self-alignment process from the back side of the substrate onto the substrate. 2. The blood-air optical device described in item 1 of Patent No. 11-1, characterized in that in the self-alignment step from the back surface of the substrate, the substrate G is exposed from an oblique direction.
JP57118256A 1982-07-07 1982-07-07 electro-optical device Granted JPS599635A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57118256A JPS599635A (en) 1982-07-07 1982-07-07 electro-optical device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57118256A JPS599635A (en) 1982-07-07 1982-07-07 electro-optical device

Publications (2)

Publication Number Publication Date
JPS599635A true JPS599635A (en) 1984-01-19
JPH0458008B2 JPH0458008B2 (en) 1992-09-16

Family

ID=14732110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57118256A Granted JPS599635A (en) 1982-07-07 1982-07-07 electro-optical device

Country Status (1)

Country Link
JP (1) JPS599635A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60112089A (en) * 1983-11-22 1985-06-18 松下電器産業株式会社 Image display unit and manufacture thereof
JPS628125A (en) * 1985-07-05 1987-01-16 Seiko Instr & Electronics Ltd Production of liquid crystal display device and its substrate
US4768863A (en) * 1985-07-05 1988-09-06 Vdo Adolf Schindling Ag Liquid crystal cell having MIM elements on both substrates
JPS63220202A (en) * 1987-03-10 1988-09-13 Seiko Instr & Electronics Ltd Production of color filter
JPS63287801A (en) * 1987-05-08 1988-11-24 財團法人韓國電子通信研究所 Geometrical formation of diffraction grating
US4820612A (en) * 1984-12-26 1989-04-11 Semiconductor Energy Laboratory Co., Ltd. Electronic device and its manufacturing method
JPH04194823A (en) * 1990-11-22 1992-07-14 Hitachi Ltd liquid crystal display device
US5163220A (en) * 1991-10-09 1992-11-17 The Unites States Of America As Represented By The Secretary Of The Army Method of enhancing the electrical conductivity of indium-tin-oxide electrode stripes
US5246468A (en) * 1990-07-06 1993-09-21 Seiko Epson Corporation Method of fabricating a lateral metal-insulator-metal device compatible with liquid crystal displays

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60112089A (en) * 1983-11-22 1985-06-18 松下電器産業株式会社 Image display unit and manufacture thereof
US4820612A (en) * 1984-12-26 1989-04-11 Semiconductor Energy Laboratory Co., Ltd. Electronic device and its manufacturing method
US4828967A (en) * 1984-12-26 1989-05-09 Semiconductor Energy Laboratory Co., Ltd. Electronic device and its manufacturing method
JPS628125A (en) * 1985-07-05 1987-01-16 Seiko Instr & Electronics Ltd Production of liquid crystal display device and its substrate
US4768863A (en) * 1985-07-05 1988-09-06 Vdo Adolf Schindling Ag Liquid crystal cell having MIM elements on both substrates
JPS63220202A (en) * 1987-03-10 1988-09-13 Seiko Instr & Electronics Ltd Production of color filter
JPS63287801A (en) * 1987-05-08 1988-11-24 財團法人韓國電子通信研究所 Geometrical formation of diffraction grating
US5246468A (en) * 1990-07-06 1993-09-21 Seiko Epson Corporation Method of fabricating a lateral metal-insulator-metal device compatible with liquid crystal displays
JPH04194823A (en) * 1990-11-22 1992-07-14 Hitachi Ltd liquid crystal display device
US5163220A (en) * 1991-10-09 1992-11-17 The Unites States Of America As Represented By The Secretary Of The Army Method of enhancing the electrical conductivity of indium-tin-oxide electrode stripes

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