JPS6014832B2 - Vapor deposition equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION An object of the present invention is to provide a vapor deposition process that can be applied to a vapor deposition layer and form a film having a uniform thickness.

In particular, it relates to precision thin film deposition layers useful in the manufacture of electronic components such as semiconductor devices. Until now, in various fields including the semiconductor industry, films of various materials have been produced using various manufacturing processes such as vacuum evaporation, sputtering evaporation, or gas phase reaction methods.

According to this type of vapor deposition method, the film thickness distribution is wide;
The variation in film thickness is about 20% even within the same manufacturing lot, which has the drawback of making it difficult to manufacture highly accurate elements.

The reason for this is, for example, in a parallel plate type sputtering deposition layer, due to constraints on the geometric dimensions of a flat plate type sputtering target. In this case, in general, with a flat target, if the substrate is placed facing the target, the film thickness tends to be thicker in the area corresponding to the center of the target, and thinner as it approaches the periphery of the target. . The inventors proposed a method for solving the film thickness distribution caused by the geometrical dimensions of conventional evaporation equipment by installing a shield between the evaporation source and the substrate to partially shield the substrate from the evaporation source. By installing this, we succeeded in reducing the size slightly.

The present invention relates to a device that further improves this technique. The details will be explained below.

Figures 1A and 1B show the basic configuration of a vapor deposition system using a rectangular evaporation source.

The main part of this evaporation layer is a square or rectangular evaporation source 1.
, a substrate stand 2, a substrate 3 placed thereon, and a shielding body 4 made of a thin blade-like plate. A shielding body 4 made of a thin blade-like plate is reciprocated along one side direction 5 of the square or rectangular evaporation source 1. In this case, when the wing-shaped shield 4 is not used, a thin film having a film thickness distribution as shown by curves 101 and 102 in FIG. 1C is formed on the surface of the substrate 3. Note that this film thickness distribution is a distribution along a center line parallel to each side of the substrate 3. As is clear from this, the thickness of the peripheral portion of the surface of the substrate 3 is 80% of that of the central portion. However, when the shielding body 4 is used, the thickness becomes constant as shown by curves 111 and 112 in FIG. 1C, and the film thickness deviation can be reduced to 1% or less, for example. The shielding body 4 used at this time, as shown in FIG. 1B, is wide in the middle at the part facing the thicker deposited film on the surface of the substrate 3, and narrower in the middle towards both ends. .

The speed of the reciprocating movement of the shield 4 is made slow when moving over a portion where the deposited film is thick, and slowed when moving over a portion where the deposited film is thin. As the shielding body, a shielding body having a shape similar to that shown in FIG. 1B may be arranged perpendicularly to the shielding body and reciprocated in directions perpendicular to each other.

As an example, an example in which a sputtering evaporation source is used as the evaporation source will be described.

In this case, a magnetroso sputtering evaporation source was used to speed up the deposition. Figure 2 shows the configuration of its main parts. In this case, in particular, a planar magnetron target 11 is used, and a shield 13 is arranged between it and the substrate 12.
The shield 13 has a wing-like structure with a wide center portion, and is rotated around a rotation axis 14. The rotational speed at this time is such that the shield 1 faces the central part of the substrate 12.
3 passes slowly, and when the shield 13 passes facing the edge portion of the substrate 12, it moves far away. With this configuration, the film thickness distribution within the substrate can be reduced to 1% or less. As is clear from the above, the vapor deposition tank according to the present invention includes a shield between the evaporation source and the substrate disposed facing the evaporation source, which partially shields the substrate from the evaporation source. Since the shielding body and the substrate are moved relative to each other, a thin film having a uniform thickness can be formed.

Here, a sputtering evaporation source is taken as an example of an evaporation source, but the evaporation source is not necessarily limited to a sputtering evaporation source, and any evaporation source that generates uniform thickness lines with good reproducibility during vapor deposition may be used. For example, a thermal evaporation source by laser beam irradiation can also be used as the evaporation source of the vapor deposition apparatus of the present invention. This equipment can be used not only to manufacture integrated circuits, but also ultra-precision electronic components using thin films, such as ultra-precision thin-film resistors, AD converters, magnetic heads, surface acoustic wave devices, and ultra-precision thin-film sensors. It is particularly effective and has a wide range of uses.

[Brief explanation of the drawing]

FIG. 1A is a diagram showing the configuration of the main parts of an embodiment of the Aoi wearing calendar according to the present invention, FIG. 1B is a plan view showing the shape of the shield used therein, and FIG. FIG. 2 is a perspective view showing an example of the configuration of the main parts. 1... Evaporation source, 2... Substrate stand, 3...
...substrate, 4...shielding body, 11...evaporation source, 12...substrate, 13...shielding body, 1
4...Rotation axis. Figure 1 Figure 2

Claims (1)

[Scope of Claims] 1. A shielding body that partially shields the substrate from the evaporation source is arranged between a rectangular flat plate-shaped evaporation source and a substrate placed facing the evaporation source. and the shield has a shape such that the portion facing the thicker part of the vapor deposited film on the surface of the substrate is wide, and the part facing the thinner part of the vapor deposited film on the surface of the substrate is narrower. When the shield faces a portion of the substrate surface where the thickness of the deposited film is thick,
The relative speed between the substrate and the shield is slowed down, the relative speed is increased when facing a thinner part of the deposited film, and the substrate and the shield are moved relative to each other along one side of the evaporation source. A vapor deposition apparatus characterized in that it is configured to make a reciprocating motion. 2. The vapor deposition apparatus according to claim 1, wherein a sputtering evaporation source, a magnetron sputtering evaporation source, or a planar magnetron evaporation source is used as the evaporation source.