JPS60187075A - Driving circuit of laser diode - Google Patents
Driving circuit of laser diodeInfo
- Publication number
- JPS60187075A JPS60187075A JP4270184A JP4270184A JPS60187075A JP S60187075 A JPS60187075 A JP S60187075A JP 4270184 A JP4270184 A JP 4270184A JP 4270184 A JP4270184 A JP 4270184A JP S60187075 A JPS60187075 A JP S60187075A
- Authority
- JP
- Japan
- Prior art keywords
- laser diode
- circuit
- capacitor
- frequency current
- drive circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
発明の技術分野
本発明は、光出力の符号量干渉を小さくできるレーザダ
イオードの駆動回路に関する。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to a laser diode drive circuit that can reduce code amount interference of optical output.
従来技術及び問題点
従来レーザダイオードは、第１図に示す様にして駆動さ
れていた。すなわちＦＥＴＩのドレインにレーザダイオ
ードＬＤを接続し、ＦＥＴＩのゲートにパルス信号を、
ドレインにバイアス信％Ｉｅを与えることによりレーザ
ダイオードを駆動している。Prior Art and Problems A conventional laser diode was driven as shown in FIG. In other words, a laser diode LD is connected to the drain of FETI, and a pulse signal is applied to the gate of FETI.
The laser diode is driven by applying a bias signal %Ie to the drain.
ところが、その出力光を電気信号に変換し、オシロスコ
ープで観察すると、第２図に示す様に符号量干渉が生じ
ていた。However, when the output light was converted into an electrical signal and observed with an oscilloscope, code amount interference occurred as shown in FIG.
発明の目的及び構成
本発明は、この様な欠点を除去し、符号量干渉のない出
力光を得ることを目的とするものである。Object and Structure of the Invention The object of the present invention is to eliminate such drawbacks and obtain output light without code amount interference.
そして、この目的は、本発明によれば、レーザダイオー
ドに対して、並列に該レーザダイオードから発生する高
周波電流を吸収する回路を接続したことを特徴とするレ
ーザダイオードの駆動回路によって達成される。According to the present invention, this object is achieved by a laser diode drive circuit characterized in that a circuit for absorbing high frequency current generated from the laser diode is connected in parallel to the laser diode.
発明の実施例
レーザ・ダイオードを高速変調する際に問題となる緩和
振動やすそ引き現象およびこれかもとになって生じる符
号量干渉の主たる要因は、活性層内で生じる過度的なキ
ャリア密度の変動であり、さらに、レーザ・ダイオード
の実装および駆動回路の特性と相まってこれらの現象は
助長されることにある。Embodiments of the Invention The main cause of the relaxation oscillation and skirting phenomena that occur when high-speed modulation of laser diodes and the code amount interference that arises from these phenomena is excessive carrier density fluctuation that occurs within the active layer. Furthermore, these phenomena are exacerbated by the characteristics of the laser diode packaging and drive circuit.
本発明は、変調時のキャリア密度の変動に対応して生じ
る端子電圧の変動を半導体レーザからの高周波電流発生
とみなし、この高周波電流を吸収することにより、不要
なキャリア密度の変動を抑え符号量干渉の少ない良好な
変調波形を得るものである。In the present invention, fluctuations in terminal voltage that occur in response to fluctuations in carrier density during modulation are regarded as high-frequency current generation from a semiconductor laser, and by absorbing this high-frequency current, unnecessary fluctuations in carrier density are suppressed. This provides a good modulation waveform with less interference.
以下、実施例に基づいて説明する。The following will explain based on examples.
第３図に実施例を示す。図中のＤ／ −Ｄ９はダイオー
ド、Ｃ，、Ｃ２はコンデンサ、Ｒは抵抗である。An example is shown in FIG. In the figure, D/-D9 is a diode, C, C2 are capacitors, and R is a resistor.
ダイオードＤＩ−ＤｑおよびコンデンサＣ７は、レーザ
・ダイオードＬＤの端子電圧を固定するとともに、符号
量干渉の主要因であるレーザ・ダイオードＬＤから発生
する高周波電流を吸収するものである。抵抗Ｒおよびコ
ンデンサＣ３は、レーザ・ダイオードＬＤの実装に伴う
寄生のりアクタンス分によりレーザ・ダイオードＬＤか
ら発生する高周波電流が共振するのを避けるための分流
回路であり、レーザ・ダイオード駆動回路との整合性を
広帯域に渡って確保するためのものである。The diode DI-Dq and the capacitor C7 fix the terminal voltage of the laser diode LD and absorb the high frequency current generated from the laser diode LD, which is the main cause of code amount interference. The resistor R and capacitor C3 are a shunt circuit to avoid resonance of the high frequency current generated from the laser diode LD due to the parasitic actance caused by the mounting of the laser diode LD, and are compatible with the laser diode drive circuit. This is to ensure performance across a wide band.
ここで、ダイオードＤ、４は逆バイアスされたダイオー
ドであり、コンデンサとの置換が可能である。同様にコ
ンデンサＣ１は、逆バイアスされたダイオードと置換で
ある。Here, the diodes D and 4 are reverse biased diodes and can be replaced with capacitors. Similarly, capacitor C1 is a reverse biased diode replacement.
結果を第り図に示す。第４図ではコンデンサＣ２の容量
を４７０００ＰＦ、Ｃ２の容量を“ＩＰＦ”、ショット
キーバイアダイオードＤＩ−Ｄｑとして“ＩＦ１０６”
（富士通製）を、ＦＥＴとして”Ｆｓｘ５２” （富
士通製）を、レーザダイオードとして“ＶＳＢレーザダ
イオード”を用い、駆動パルスの周波数は１．６Ｃｂｉ
ｔ／ｓでマーク率２とした場合の結果である。図から明
らかな如く符号第５図、第６図、第７図に本発明の他の
実施例を示す。The results are shown in Figure 3. In Figure 4, the capacitance of capacitor C2 is 47000PF, the capacitance of C2 is "IPF", and the Schottky via diode DI-Dq is "IF106".
(manufactured by Fujitsu), "Fsx52" (manufactured by Fujitsu) as the FET, "VSB laser diode" as the laser diode, and the frequency of the driving pulse is 1.6Cbi.
These are the results when the mark rate is 2 in t/s. As is clear from the drawings, other embodiments of the present invention are shown in FIGS. 5, 6, and 7.
第５図は、第３図の回路において、抵抗Ｒとコンデンサ
Ｃ２のみを用いた例で、一方第６図は、第３図の回路に
おいて、ショットキーバリアダイオードＤ、”Ｄ４＋
コンデンサＣ／を用いて構成した例で、第７図では第６
図において、コンデンサＣ／を削除した例である。5 shows an example in which only the resistor R and capacitor C2 are used in the circuit shown in FIG. 3, while FIG. 6 shows an example in which the circuit shown in FIG.
This is an example configured using a capacitor C/, and in Fig. 7, the 6th
This is an example in which the capacitor C/ is removed from the figure.
第５図、第６図、第７図においても、第３図と同様レー
ザダイオードＬＤからの高周波電流を吸収することがで
きる。Also in FIGS. 5, 6, and 7, the high frequency current from the laser diode LD can be absorbed as in FIG. 3.
発明の効果
以上のことから明らかな様に、本発明によればレーザダ
イオードからのレーザ光の符号量干渉を小さくすること
ができる。Effects of the Invention As is clear from the above, according to the present invention, code amount interference of laser light from a laser diode can be reduced.
第１図は従来の駆動回路を示す図、第２図は第１図の回
路によってレーザダイオードを駆動した場合の出力波形
を示す図、第３図は本発明の実施例を示す図、第４図は
本発明の回路によりレーザダイオードを駆動した場合の
出力波形を示す図で。
第５図、第６図、第７図は本発明の他の実施例である。
図中Ｄ／〜Ｄ９はショットキーバイアダイオード、Ｉθ
はバイアス電流、Ｃ，、Ｃ２ばコンデンサ、Ｒは抵抗、
ＬＤはレーザダイオードである。
手続−７：ｊｔｉ正書（方式）
昭和５９年 ６月２８日
１、事件の表示
昭和５９年特許願第０４２７０１号
２、発明の名称
レーザダイオードの駆動回路
３、補正をする者
事件との関係 特許出願人
住所 神奈川県川崎市中原区上小田中１０１５番地名称
富士通株式会社（他１名）
４、代理人
住所 神奈川県用崎市中原区上小田中１０１５番地５、
補正命令の日付
昭和５９年５月２９日（発送日）
本願明細書第６頁第１行および第３行の「出力波形を示
す図」を「出力波形を示す図（オシロ波形）」と補正い
たします。FIG. 1 is a diagram showing a conventional drive circuit, FIG. 2 is a diagram showing an output waveform when a laser diode is driven by the circuit in FIG. 1, FIG. 3 is a diagram showing an embodiment of the present invention, and FIG. The figure shows the output waveform when a laser diode is driven by the circuit of the present invention. FIGS. 5, 6, and 7 show other embodiments of the present invention. In the figure, D/~D9 are Schottky via diodes, Iθ
is the bias current, C, C2 is the capacitor, R is the resistance,
LD is a laser diode. Procedure-7: JTI Official Book (Method) June 28, 1980 1, Indication of the Case 1982 Patent Application No. 042701 2, Name of the Invention Laser Diode Drive Circuit 3, Person Making the Amendment Relationship with the Case Patent Applicant Address: 1015 Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture Name: Fujitsu Limited (1 other person) 4. Agent address: 1015-5 Kamiodanaka, Nakahara-ku, Yozaki City, Kanagawa Prefecture.
Date of amendment order: May 29, 1980 (shipment date) "Diagram showing output waveform" in the first and third lines of page 6 of the specification of the present application is corrected to "Diagram showing output waveform (oscilloscope waveform)" I will do it.
Claims (1)
オードから発生する高周波電流を吸収する回路を接続し
たことを特徴とするレーザダイオードの駆動回路。 ２、上記高周波電流を吸収する回路として、抵抗とコン
デンサの直列回路を用いることを特徴とする特許請求の
範囲第１項記載のレーザダイオードの駆動回路。 ３、上記高周波電流を吸収する回路として、ダイオード
と容量の並列回路を用いたことを特徴とする特許請求の
範囲第１項記載のレーザダイオードの駆動回路。 ４、上記高周波電流を吸収する回路として、抵抗とコン
デンサの直列回路及びダイオードとコンデンサの並列回
路を用いる様にしたことを特徴とする特許請求の範囲第
１項記載のレーザダイオードの駆動回路。[Claims] 1. A laser diode drive circuit, characterized in that a circuit for absorbing high frequency current generated from the laser diode is connected in parallel to the laser diode. 2. The laser diode drive circuit according to claim 1, wherein a series circuit of a resistor and a capacitor is used as the circuit for absorbing the high-frequency current. 3. The laser diode drive circuit according to claim 1, wherein a parallel circuit of a diode and a capacitor is used as the circuit for absorbing the high-frequency current. 4. The laser diode drive circuit according to claim 1, wherein a series circuit of a resistor and a capacitor and a parallel circuit of a diode and a capacitor are used as the circuit for absorbing the high frequency current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59042701A JPH077855B2 (en) | 1984-03-06 | 1984-03-06 | Laser diode drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59042701A JPH077855B2 (en) | 1984-03-06 | 1984-03-06 | Laser diode drive circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60187075A true JPS60187075A (en) | 1985-09-24 |
| JPH077855B2 JPH077855B2 (en) | 1995-01-30 |
Family
ID=12643354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59042701A Expired - Lifetime JPH077855B2 (en) | 1984-03-06 | 1984-03-06 | Laser diode drive circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH077855B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005302895A (en) * | 2004-04-08 | 2005-10-27 | Sumitomo Electric Ind Ltd | Semiconductor laser drive circuit |
| US7570680B2 (en) | 2006-10-31 | 2009-08-04 | Sumitomo Electric Industries, Ltd. | Laser diode driver with multiple modulation current source |
| US7711021B2 (en) | 2006-06-02 | 2010-05-04 | Sumitomo Electric Industries Ltd. | Laser driver circuit able to compensate a temperature dependence of the laser diode |
| US10666013B2 (en) | 2017-06-05 | 2020-05-26 | Sumitomo Electric Industries, Ltd. | Driver circuit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5818988A (en) * | 1981-07-28 | 1983-02-03 | Toshiba Corp | Driving device for semiconductor laser |
| JPS58153239A (en) * | 1982-03-05 | 1983-09-12 | Nec Corp | Optical pickup device |
-
1984
- 1984-03-06 JP JP59042701A patent/JPH077855B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5818988A (en) * | 1981-07-28 | 1983-02-03 | Toshiba Corp | Driving device for semiconductor laser |
| JPS58153239A (en) * | 1982-03-05 | 1983-09-12 | Nec Corp | Optical pickup device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005302895A (en) * | 2004-04-08 | 2005-10-27 | Sumitomo Electric Ind Ltd | Semiconductor laser drive circuit |
| US7711021B2 (en) | 2006-06-02 | 2010-05-04 | Sumitomo Electric Industries Ltd. | Laser driver circuit able to compensate a temperature dependence of the laser diode |
| US7570680B2 (en) | 2006-10-31 | 2009-08-04 | Sumitomo Electric Industries, Ltd. | Laser diode driver with multiple modulation current source |
| US10666013B2 (en) | 2017-06-05 | 2020-05-26 | Sumitomo Electric Industries, Ltd. | Driver circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH077855B2 (en) | 1995-01-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS60187075A (en) | Driving circuit of laser diode | |
| EP0559469A2 (en) | Magnetic head driving device and magnetooptical recording apparatus | |
| JPH0821840B2 (en) | Snubber circuit of power semiconductor device | |
| JPH01268451A (en) | Overvoltage suppressing circuit for semiconductor device | |
| JP2715724B2 (en) | Semiconductor integrated circuit | |
| KR930008891A (en) | On-chip decoupling capacitor configuration | |
| KR830009684A (en) | Negative resistance oscillator | |
| JPS6047469A (en) | semiconductor equipment | |
| JPS6314487Y2 (en) | ||
| US3793482A (en) | Television line oscillator and line driver circuit arrangements | |
| JP3599798B2 (en) | Semiconductor laser driver | |
| JPH08116136A (en) | Optoelectronic device | |
| JPH0531684Y2 (en) | ||
| JP2001111361A (en) | Emitter/follower circuit | |
| JPS59201676A (en) | Power supply device using flyback transformer | |
| SU1202010A1 (en) | Self-excited oscillator | |
| JP3187617B2 (en) | Magnetic head driving device and magneto-optical recording device | |
| JPH033126A (en) | High frequency superimposing circuit for driving laser diode | |
| JPS61107784A (en) | semiconductor laser equipment | |
| JPS63128784A (en) | Photoelectronic integrated circuit | |
| SU959256A1 (en) | Self-excited crystal oscillator | |
| JPS60103687A (en) | semiconductor laser device | |
| JPS6090410A (en) | Waveform slicing circuit | |
| JPS591211U (en) | frequency modulation circuit | |
| JPS6055111U (en) | bias circuit |