JPS60198703A - Resistor composition - Google Patents
Resistor compositionInfo
- Publication number
- JPS60198703A JPS60198703A JP59055771A JP5577184A JPS60198703A JP S60198703 A JPS60198703 A JP S60198703A JP 59055771 A JP59055771 A JP 59055771A JP 5577184 A JP5577184 A JP 5577184A JP S60198703 A JPS60198703 A JP S60198703A
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- resistor
- composition
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Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
技術分野
本発明は、厚膜抵抗体用の抵抗ペーストの材料として最
適な抵抗体組成物に関し、更に詳細には。DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a resistor composition suitable as a material for a resistor paste for a thick film resistor, and more particularly, to a resistor composition suitable as a material for a resistor paste for a thick film resistor.
未焼成磁器シートにペースト状態で塗布し、非酸化t!
ll:雰囲気で焼成することによって厚膜抵抗体を得る
ことが出来る抵抗体組成物に関する。It is applied as a paste to an unfired porcelain sheet and is non-oxidized.
11: This invention relates to a resistor composition capable of producing a thick film resistor by firing in an atmosphere.
従来技術
未mW@6 シー ) (生シート)にニッケルペース
トあるいは銅ペーストケ所定パターンに開側し。Conventional technology (mW @ 6 sheets) (raw sheet) is coated with nickel paste or copper paste and opened in a predetermined pattern.
こへ等乞数枚積層し℃熱圧着し、非酸化性雰囲気で焼成
丁れば、多層磁器回路基板が得られる。このような多層
磁器回路基板を使用1几ば1回路装置の小型化が可能に
なる。しかし、この多層磁器回路基板を使用して回路装
置を構成する際には。A multilayer ceramic circuit board can be obtained by stacking several layers, heat-pressing them at °C, and firing them in a non-oxidizing atmosphere. By using such a multilayer ceramic circuit board, it is possible to miniaturize a single circuit device. However, when constructing a circuit device using this multilayer ceramic circuit board.
多層磁器回路基板に対して多くのチップ状の素子を取り
付けることが必要でるり、大幅な小型化が不巧能であっ
た。もし、非酸化性雰囲気で焼成可能な抵抗体組成物が
出現すれば、導体ペーストと共に抵抗体ペーストを生シ
ートに塗布して焼成することが可能になるので1回路装
置の大幅な小型化が可能になる。ところが、現状では実
用になる上述の如き抵抗体組成物及びペーストは出現し
ていない。It was necessary to attach many chip-like elements to the multilayer ceramic circuit board, and it was difficult to achieve significant miniaturization. If a resistor composition that can be fired in a non-oxidizing atmosphere emerges, it would be possible to apply resistor paste together with conductor paste to a green sheet and fire it, making it possible to significantly downsize a single-circuit device. become. However, at present, the above-mentioned resistor compositions and pastes that are put into practical use have not yet appeared.
発明の目的
そこで2本発明の目的は、非酸化性雰囲気中で焼成する
ことが出来る抵抗体組成物を提供することにある。OBJECTS OF THE INVENTION A second object of the present invention is to provide a resistor composition that can be fired in a non-oxidizing atmosphere.
発明の構成
上記目的を達成するための本発明は、] LO〜70.
0重量部の珪化モリブデンと、1.0〜71.0重量部
の弗化カルシウム、弗化ストロンチウム。Structure of the Invention The present invention to achieve the above object is as follows:] LO to 70.
0 parts by weight of molybdenum silicide and 1.0 to 71.0 parts by weight of calcium fluoride and strontium fluoride.
及び弗化バリウムの内の少な(とも1mの弗化金属と、
10.0〜80.0重量部のガラスとから成る抵抗体組
成物に係わるものである。and a small amount of barium fluoride (both 1 m of metal fluoride and
The present invention relates to a resistor composition comprising 10.0 to 80.0 parts by weight of glass.
発明の作用効果
上記発明に基づく抵抗棒組g物ケ使用して抵抗体ペース
トラ作り、これを磁器生シート上に印刷し、非酸化性雰
囲気中で1050℃〜1250℃のず
温度で焼成丁れば、実用可能な特性を有する厚膜抵抗を
得ることが出来る。従って、ニッケル等の卑金属導体ペ
ーストによる厚膜導体の形成と同時に卑金属厚膜抵抗を
形成することが出来る。この結果、回路装置の小型化及
び低コスト化に寄与することが出来る。Effects of the Invention A resistor paste is made using the resistor rod assembly based on the above invention, printed on a raw porcelain sheet, and baked at a temperature of 1050°C to 1250°C in a non-oxidizing atmosphere. For example, a thick film resistor having practically usable characteristics can be obtained. Therefore, a base metal thick film resistor can be formed simultaneously with the formation of a thick film conductor using a base metal conductor paste such as nickel. As a result, it is possible to contribute to miniaturization and cost reduction of circuit devices.
実施例1
次に1本発明の実施例に係わる抵抗体組成物及びこれを
オロ用した多層磁器回路基板の形成方法について述べる
。Example 1 Next, a resistor composition according to an example of the present invention and a method for forming a multilayer ceramic circuit board using the same will be described.
まず、二酸化珪素(5ift) 7 s、o重量部、酸
化亜鉛(ZnO)5.5重量部、酸化ジルコニウム(Z
r0x)12−ONks、炭酸2 # シロ 、1.
(CaCO2) 3.071LtK部、及び酸化アルミ
ニウム(Al*Om ) ] −55重量を混合し、ア
ルミナルツボ申、1400’Cで30分間溶融し、この
浴融液を水中に投入し、急冷させた。First, silicon dioxide (5ift) 7s, o parts by weight, zinc oxide (ZnO) 5.5 parts by weight, zirconium oxide (Z
r0x) 12-ONks, carbonic acid 2 #shiro, 1.
3.071 LtK parts of (CaCO2) and -55 weight of aluminum oxide (Al*Om) were mixed and melted in an aluminum crucible at 1400'C for 30 minutes, and the bath melt was poured into water and rapidly cooled. .
このガラスをアルミナ乳鉢で約50μm程度に粉砕り、
更にこれをエタノールと共にポリエチレン裏ボットミル
の中に入れ、アルミナボールで150時間粉砕し1粒径
が10/7m以下の粉末状のガラスを得た。This glass is crushed to about 50 μm in an alumina mortar,
Further, this was placed in a polyethylene-backed bot mill together with ethanol, and ground with alumina balls for 150 hours to obtain powdered glass with a particle size of 10/7 m or less.
次に、上記ガラスと1Mot3jと、 CaFtと乞第
1表に示す割合に秤量し、ボールミルに入れ℃混合した
。次いで、この混合91JZアルゴンガス雰囲気中12
00℃で1時間熱処理ン行なった。そして。Next, the above glass, 1Mot3j, and CaFt were weighed in the proportions shown in Table 1, and mixed in a ball mill at ℃. Then, this mixture 91JZ 12 in argon gas atmosphere
Heat treatment was performed at 00°C for 1 hour. and.
こnYエタノールと共にポリエチレン表のボットミル中
に入れ、アルミナボールで24時間粉砕し。This was placed in a polyethylene-lined bot mill with nY ethanol and ground for 24 hours with an alumina ball.
105m以下、好ましくは5μm以下の合金粉末を得た
。なお、この合金粉末(抵抗体紐取v)の組成は、最初
の原料の組成と実質的に同じである。An alloy powder with a diameter of 105 m or less, preferably 5 μm or less was obtained. The composition of this alloy powder (resistance string v) is substantially the same as the composition of the initial raw material.
しかる後、この合金粉末100重量部と、有機バインダ
にトロセルロースl ON 童iU ’l フチルヵル
ビトール90重量部で溶かしたもの)25重量部とを3
本ロールミルで混練して約800ポイズの抵抗体ペース
トとした。Thereafter, 100 parts by weight of this alloy powder and 25 parts by weight of trocellulose dissolved in 90 parts by weight of phthyl carbitol in an organic binder were mixed into 3 parts by weight.
This was kneaded using this roll mill to obtain a resistor paste of about 800 poise.
一方、上記抵抗体ベース)Y印刷するための磁器生シー
ト乞次の方法で作製した。A1.0m粉末50m、li
i、 Sin、粉床20−@置部、 SrO粉末25i
ii部、 Li2O粉末IN量部、及びMgO粉末4重
量部からなるセラミック原料粉末と、アクリル酸エステ
ルポリマーの水浴液からなるバインタ“−と、グリセリ
ンと、カルボン酸塩及び水と、をそれぞれボールミルに
入れて混合して、スリップ乞作製し。On the other hand, a raw porcelain sheet for Y printing (based on the above resistor) was produced by the following method. A1.0m powder 50m, li
i, Sin, powder bed 20-@Okibe, SrO powder 25i
Ceramic raw material powder consisting of part ii, IN amount of Li2O powder, and 4 parts by weight of MgO powder, binder consisting of a water bath solution of acrylic acid ester polymer, glycerin, carboxylic acid salt, and water were each placed in a ball mill. Add, mix, and make a slip.
脱泡処理した後にドクターグレード法により厚さ200
μmの長尺の生シート乞作久した。そして。After defoaming treatment, the thickness is 200mm using the doctor grade method.
It's been a long time since I've been producing micrometer-long raw sheets. and.
この生シートから、9mmX 9mmと6 mm X
9 mmの2糊類の生シート片を切り抜いた。From this raw sheet, 9mm x 9mm and 6mm x
A 9 mm piece of the two-glue raw sheet was cut out.
次に、第1図に示す如く、前者の化シート片山上に、ニ
ッケル(NiJ粉末と有機バインダと娶3:1の比で混
練した導電性ベース)”k200メツシュのスクリーン
を用いて印刷し、125℃、10分間乾燥することによ
って第1図に示す如りNl導体膜(2)乞形成した。Next, as shown in Fig. 1, nickel (a conductive base made by kneading NiJ powder and an organic binder at a ratio of 3:1) was printed on the former layer of the chemically modified sheet using a K200 mesh screen. By drying at 125° C. for 10 minutes, an Nl conductor film (2) was formed as shown in FIG.
次に1本発明に係わる抵抗体ペースト乞導電性ペースト
とP1様にスクリーン印刷し、乾燥することによって、
第1図に示す如く抵抗体膜(3)ヲ形成した。Next, by screen printing P1 with the resistor paste and conductive paste according to the present invention and drying,
A resistor film (3) was formed as shown in FIG.
次に、生シート片山の上に鎖線で示す大きさのもう一方
の生シート片(41を積層し、100℃。Next, the other raw sheet piece (41) of the size indicated by the chain line was stacked on top of the pile of raw sheet pieces, and heated at 100°C.
150 kg/cm2で熱圧着し、これを酸化性雰囲気
中500℃で熱処理して有機バインダをとばし。Thermocompression bonding was carried out at 150 kg/cm2, and this was heat-treated at 500°C in an oxidizing atmosphere to blow off the organic binder.
へ、 (98,5容積%〕+H2(1−5容積%)の還
元性雰囲気中で1200℃、2時間焼成し、第2図に示
す如く、磁器AI (la)(4a)の中に、厚膜導体
(2a)と厚膜抵抗体(3a)とを有する混成集積回路
用の多層磁器回路基板を完成させた。なお、抵抗体(3
a〕の導体(2a)にかがらない部分の大きさは、3r
nmX 3 mm (あり、膜厚は18pmである。(98.5% by volume) + H2 (1-5% by volume) in a reducing atmosphere at 1200°C for 2 hours, as shown in Figure 2, in porcelain AI (la) (4a). A multilayer ceramic circuit board for a hybrid integrated circuit having a thick film conductor (2a) and a thick film resistor (3a) was completed.
The size of the part of a] that does not overlap the conductor (2a) is 3r
nmX 3 mm (Yes, and the film thickness is 18 pm.
次に、この抵抗体(3a)の25℃におけるシート抵抗
乞ブリッジ法で測定し、且つ、25℃から125℃の温
度範囲での抵抗温度係数を御1足したところ、第1表の
結果が得られた。Next, when we measured the sheet resistance of this resistor (3a) at 25°C using the bridge method and added 1 to the resistance temperature coefficient in the temperature range of 25°C to 125°C, the results in Table 1 were obtained. Obtained.
上述から明らかな如く1本笑施例の抵抗体ペーストを磁
器生シートに塗布して還元性雰囲気中で焼成することに
より、厚膜抵抗体が得ら九る。従って、Ni等の卑金楕
ペーストと同時に焼成することが出来る。このため、磁
器層内に、Ni等のベーストによる厚膜導体と共吟、厚
膜抵抗を設けることが可能になり、混成集積回路の低コ
スト化、小型化が出来る。As is clear from the above, a thick film resistor can be obtained by applying the resistor paste of the single-layer embodiment onto a raw porcelain sheet and firing it in a reducing atmosphere. Therefore, the base metal paste such as Ni can be fired at the same time. Therefore, it is possible to provide a thick film resistor in the ceramic layer together with a thick film conductor based on Ni or the like, and the cost and size of the hybrid integrated circuit can be reduced.
また、第1表から明らかな如(。Also, as is clear from Table 1 (.
ガラス 10.0〜80.0重量部。Glass 10.0-80.0 parts by weight.
Mo、Sl 19.0〜70.0ilEft 音b 。Mo, Sl 19.0~70.0ilEft Sound b.
CaF* ] −0〜71−ON置部
の、1111成によって、シート抵抗7.95〜12,
150゜000Ω/口の厚膜抵抗を得ることが出来る。CaF* ] -0~71-ON placement part, 1111 composition, sheet resistance 7.95 ~ 12,
A thick film resistance of 150°000Ω/hole can be obtained.
従って6組成比を適宜選択することによって、任意の抵
抗値を得ることが出来る。Therefore, by appropriately selecting the six composition ratios, any resistance value can be obtained.
また、抵抗温度係数は−1998〜+953 pI)m
/”C罠収まるので、実用可能な抵抗を提供することが
出来る。Also, the temperature coefficient of resistance is -1998 to +953 pI)m
/” Since the C trap is contained, it is possible to provide a practical resistance.
実施例2
ガラスの組成が変化しても、実施例1と同様な作用効果
が得られることを確かめるために1次の如くガラス粉末
を作製した。二酸化珪素(S’02)75.0重量部、
三酸化ニホウ素CB、Os) 13.Oi!E童部置部
酸カルシウム(CaCOx) 10.0重量部、及び酸
化アルミニウム(A1.0.) 2.9重量部を混合し
。Example 2 In order to confirm that the same effects as in Example 1 can be obtained even if the composition of the glass is changed, glass powder was prepared as follows. 75.0 parts by weight of silicon dioxide (S'02),
Diboron trioxide CB, Os) 13. Oi! E Dobe 10.0 parts by weight of calcium oxide (CaCOx) and 2.9 parts by weight of aluminum oxide (A1.0.) were mixed.
実施例1と同様の手法にて粉末状のガラスを得た。Powdered glass was obtained in the same manner as in Example 1.
次に、このガラスとMo B S i及びCaF、y(
第2表に示す北軍に混合し、実施例1と同一の方法で抵
抗体組成物の粉末を得、これを使用して実施例1と同一
の方法で同一構造の多層磁器回路基板を形成し、実施例
1と同様に電気的特性を測定した。Next, this glass and MoBSi and CaF,y(
The powder of the resistor composition was obtained by mixing the powder shown in Table 2 in the same manner as in Example 1, and using this powder, a multilayer ceramic circuit board with the same structure was formed in the same manner as in Example 1. Then, the electrical characteristics were measured in the same manner as in Example 1.
この実施例2から明らかなように、ガラス組成を変えて
も抵抗特性に大きな相異は見られない。As is clear from Example 2, there is no significant difference in resistance characteristics even if the glass composition is changed.
つまり1本発明において使用されるガラスは必ずしも単
一の組成に限られるものではない。なお。In other words, the glass used in the present invention is not necessarily limited to a single composition. In addition.
実施例】におけるSin、 −ZnO−ZrO,−Ca
O−AI。Example] Sin, -ZnO-ZrO, -Ca
O-AI.
03系ガラス、実施例2の5in2− Boo、−ca
o −AI20J系ガラスはいずれも作業点(] X
10’ホイズとなる温度ノが900〜1200℃のガラ
スである。03 series glass, 5in2-Boo, -ca of Example 2
o -AI20J glass has a working point (]
The glass has a temperature of 900 to 1,200°C at which it has a 10' whistle.
本発明の抵抗体組成物のガラスは、実施例1及び2の組
成のガラスに限ることなく、900〜1200℃の作業
点を有し、且つ還元性雰囲気で焼成する際に金属化され
や1−い金属酸化物(Pbo 、 5noffi。The glass of the resistor composition of the present invention is not limited to the glasses having the compositions of Examples 1 and 2, but has a working point of 900 to 1200°C and is resistant to metallization when fired in a reducing atmosphere. - metal oxides (Pbo, 5noffi.
Bi、O,等)を含まないものであ九ば、どのような組
成物でもよいことが確かめらn5tいる。It has been confirmed that any composition may be used as long as it does not contain Bi, O, etc.).
実施例3
弗化金属が変化しても、実施例1と同様な作用効果が得
られることを確かぬるために、弗化金属を5rpz乞用
意し、実施例1と四−組成のガラスとMo3SiとS
rF*とを第3表の割合に秤量し、こnによってアルゴ
ン不活性雰囲気中の熱処理温度を900℃にした他は、
実施例1と同一方法で抵抗体組成物を形成した。しかる
後、実施例1と同一方法で、抵抗体ペースト乞作り、更
に多層磁器回路基板を作製し、電気的%性を測定したと
ころ。Example 3 In order to ensure that the same effect as in Example 1 can be obtained even if the metal fluoride is changed, 5 rpm of metal fluoride was prepared, and a glass with a four-composition as in Example 1 and Mo3Si were prepared. and S
rF* was weighed in the proportions shown in Table 3, and the heat treatment temperature in an argon inert atmosphere was set at 900°C.
A resistor composition was formed in the same manner as in Example 1. Thereafter, a resistor paste was prepared using the same method as in Example 1, and a multilayer ceramic circuit board was also prepared, and the electrical percentage was measured.
第3表に示す結果が得らnた。The results shown in Table 3 were obtained.
この第3表から明らかな如< −5rFt k使用し又
も、 CaF、の場合とほぼ同様な作用効果が得られる
。As is clear from Table 3, even when < -5rFt k is used, substantially the same effects as in the case of CaF can be obtained.
実施例4
珪化モリブデンとしてMoSi、、弗化金属としτBa
Fxを使用しても実施例1と同様な作用効果が得られる
ことを確かめるたぬに、実施例1と同一組成のガラス、
MoSi、 、 BaF、を第4表に示す割合に秤量
し、実施例1と同一方法で抵抗体組成物の粉末を作り、
これ乞使用し″C笑施例1と同一方法で。Example 4 MoSi as molybdenum silicide, τBa as metal fluoride
In order to confirm that the same effects as in Example 1 can be obtained even when Fx is used, glass having the same composition as in Example 1,
MoSi, , BaF, were weighed in the proportions shown in Table 4, and a resistor composition powder was prepared in the same manner as in Example 1.
Please use this in the same manner as Example 1.
抵抗体ペーストY作り、更に多層磁器基板を作り。Make resistor paste Y and then make a multilayer porcelain board.
その電気的特性を測定したところ、第4表の結果が得ら
れた。When its electrical characteristics were measured, the results shown in Table 4 were obtained.
実施例5
実施例1の組成のガラスとM o 81 mとSrF、
と馨第5表に示す割合に秤量し、アルゴン不活性ガス中
の熱処理温度を900℃にした点を除いて実施例1と同
一方法で抵抗体組成物の粉末を作製し、これを使用して
実施例1と同一方法、抵抗体ペーストを作り、且つ多層
磁器回路基板を作り、電気的%性を測定したところ、第
5表に示す結果が得られた。この表から明らかな如(、
珪化モリブデン。Example 5 Glass having the composition of Example 1, M o 81 m and SrF,
A resistor composition powder was prepared in the same manner as in Example 1 except that the powder was weighed in the proportions shown in Table 5 and the heat treatment temperature in argon inert gas was 900°C. A resistor paste was made using the same method as in Example 1, a multilayer ceramic circuit board was made, and the electrical percentage was measured, and the results shown in Table 5 were obtained. As is clear from this table (,
Molybdenum silicide.
及び弗化金属の権類が変化しても実施例1と同様な作用
効果が得られる。Even if the properties of the metal fluoride are changed, the same effects as in Example 1 can be obtained.
実施例6
珪化モリブデンiMo、Si、とじ、且つ弗化金稿ヲ複
数m類としても実施例1と同様な作用効果が得られるこ
とを確かめるために、実施例1と同一組成のガラス、
Mo5Si3.5rF1 、 BaF、 ’l 第6表
に示す割合に秤量し、アルゴンガス中での熱処理温度y
1ocio℃にした他は実施例1と同一方法で抵抗体組
成物の粉末を作り、これ・を使用して実施例1と同一方
法で、ペーストを作り、更に多層磁器回路基板を作り、
電気的特性を測定したところ。Example 6 In order to confirm that the same effect as in Example 1 can be obtained even when molybdenum silicide iMo, Si, binding, and fluoride metal sheets are used, glass having the same composition as in Example 1,
Mo5Si3.5rF1, BaF, 'l Weighed in the proportions shown in Table 6, heat treated in argon gas at temperature y
A powder of a resistor composition was made in the same manner as in Example 1 except that the temperature was 100° C., and a paste was made using this powder in the same manner as in Example 1, and a multilayer ceramic circuit board was made.
Measuring the electrical characteristics.
第6表の結果が得られた。この結果から明らかな如く、
弗化金属を複数種としても、1〜71重量部の範囲内で
あれば、1mの場合と同様な作用効果が得られる。The results shown in Table 6 were obtained. As is clear from this result,
Even if multiple types of metal fluoride are used, the same effects as in the case of 1 m can be obtained as long as the amount is within the range of 1 to 71 parts by weight.
変形例 本発明は上述の実施例に限定されるものでなく。Variations The invention is not limited to the embodiments described above.
例えば次の変形例が可能なものである。For example, the following modifications are possible.
(al 弗化金椙の糊類な3種類にした場合、また珪化
モリブデンをMo、Si 、 Mo5t、 、 Mo、
Si、、等の複数種の組み合せとした場合も実施例1と
同様な作用5cl果が得られることが確かめられている
。(al) When using three types of fluorinated gold paste, molybdenum silicide can be used as Mo, Si, Mo5t, Mo,
It has been confirmed that the same effect as in Example 1 can be obtained even when a combination of multiple types of Si, etc. is used.
(bl ガラスと珪化モリブデンと弗化金属との混合物
の焼成温度を900〜1200℃の範囲にすることが望
ましいことが確認されて(・る。また、この焼成は、ア
ルゴンガス以外の不活餅雰囲気、又は真空中、又は中性
雰囲気、又は還元性雰囲気で行ってもよい。(bl) It has been confirmed that it is desirable to keep the firing temperature of the mixture of glass, molybdenum silicide, and metal fluoride in the range of 900 to 1200°C. It may be carried out in an atmosphere, in a vacuum, in a neutral atmosphere, or in a reducing atmosphere.
(CI 抵抗体ペーストを作るための有機バインダは、
エチルセルロース等の樹脂ケ、テレピン油。(The organic binder for making CI resistor paste is
Resins such as ethyl cellulose, turpentine oil.
ブチルカルピトールアセテート等の高沸点溶剤に浴かし
たものでもよい。また、このバインダの量は15〜35
重量部程度置部ましい。It may also be one that has been bathed in a high boiling point solvent such as butyl carpitol acetate. Also, the amount of this binder is 15 to 35
It is preferable to use about parts by weight.
Idl 主シートと共に抵抗体ン焼成する際の雰囲気は
中性#囲気であってもよい。The atmosphere when firing the resistor together with the Idl main sheet may be a neutral atmosphere.
(eノ 非酸化性雰囲気中での生シート及び抵抗体及び
環体の焼成は、1050〜1250℃の範囲で行うごと
が望ましい。なお、この焼成の前に。(e) It is desirable that the raw sheet, resistor, and ring body be fired in a non-oxidizing atmosphere at a temperature in the range of 1050 to 1250°C.Before this firing.
400〜600℃の酸化性雰囲気で熱処理2施して有機
物を分解させることが望ましい。It is desirable to perform a second heat treatment in an oxidizing atmosphere at 400 to 600°C to decompose the organic matter.
+f1 本発明の抵抗体組成物は、勿論、ペースト以外
の状態でも使用可能である。+f1 The resistor composition of the present invention can of course be used in a state other than a paste.
第1図は本発明の実施例に係わる多NI!磁器回路パタ
ーンを示す平面図、第2図は第1図の■−〇線に摺曲す
る部分の焼成後の多層磁器回路基板を示す断面図でるる
。
11+・・・生シート片、(21・・・導体膜、(3j
・・・抵抗体膜。
(4)・・・生シート片。
代理人 高野則次FIG. 1 shows a multi-NI! according to an embodiment of the present invention. FIG. 2 is a plan view showing the ceramic circuit pattern, and FIG. 2 is a cross-sectional view showing the multilayer ceramic circuit board after firing at the portion that curves along line 1--0 in FIG. 11+... raw sheet piece, (21... conductor film, (3j
...Resistor membrane. (4)...Raw sheet piece. Agent Noriji Takano
Claims (1)
。 1.0〜71.ON51部の弗化カルシウム、弗化スト
ロンチウム、及び弗化バリウムの内の少なくとも1種の
弗化金桐と。 10.0〜80.Om:置部のガラスとから成る抵抗体
組成物。 (2)前記珪化モリブデンは、3珪化5モリブデン、2
珪化モリブテン、及び珪化3モリブデンの内の少なくと
も1種である%#f精求の範囲第1項目己載の抵抗体組
成物。 (31iiJ記ガラスは1作業点が900〜1200℃
の範囲のものである特許請求の範囲第1項又は第2項記
載の抵抗体Mi成物。[Claims] il+ 19.0-70. ONOkibe's molybdenum silicide. 1.0-71. At least one kind of paulownia fluoride selected from calcium fluoride, strontium fluoride, and barium fluoride of ON51 part. 10.0-80. Om: A resistor composition consisting of Okibe glass. (2) The molybdenum silicide is 3 molybdenum silicide, 2 molybdenum silicide,
1. A resistor composition containing at least one of molybdenum silicide and tri-molybdenum silicide. (For 31iiJ glass, one working point is 900 to 1200℃.
The resistor Mi composition according to claim 1 or 2, which falls within the range of .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59055771A JPS60198703A (en) | 1984-03-22 | 1984-03-22 | Resistor composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59055771A JPS60198703A (en) | 1984-03-22 | 1984-03-22 | Resistor composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60198703A true JPS60198703A (en) | 1985-10-08 |
Family
ID=13008132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59055771A Pending JPS60198703A (en) | 1984-03-22 | 1984-03-22 | Resistor composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60198703A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000068166A1 (en) * | 1999-05-10 | 2000-11-16 | Japan Energy Corporation | MATERIAL WITH HIGH-TEMPERATURE OXIDATION RESISTANCE CONSISTING MAINLY OF MoSi2 WITH EXCELLENT BRITTLE RESISTANCE AND HEATING MATERIAL |
-
1984
- 1984-03-22 JP JP59055771A patent/JPS60198703A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000068166A1 (en) * | 1999-05-10 | 2000-11-16 | Japan Energy Corporation | MATERIAL WITH HIGH-TEMPERATURE OXIDATION RESISTANCE CONSISTING MAINLY OF MoSi2 WITH EXCELLENT BRITTLE RESISTANCE AND HEATING MATERIAL |
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