JPS6020161U - MIS type semiconductor device - Google Patents

MIS type semiconductor device

Info

Publication number
JPS6020161U
JPS6020161U JP1983112510U JP11251083U JPS6020161U JP S6020161 U JPS6020161 U JP S6020161U JP 1983112510 U JP1983112510 U JP 1983112510U JP 11251083 U JP11251083 U JP 11251083U JP S6020161 U JPS6020161 U JP S6020161U
Authority
JP
Japan
Prior art keywords
insulating layer
mis type
semiconductor device
type semiconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1983112510U
Other languages
Japanese (ja)
Inventor
田「淵」　一夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP1983112510U priority Critical patent/JPS6020161U/en
Publication of JPS6020161U publication Critical patent/JPS6020161U/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/942—Dispositions of bond pads relative to underlying supporting features, e.g. bond pads, RDLs or vias

Landscapes

  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来例を示す断面図、第２図Ａ〜Ｄは本考案の
一実施例装置の製造工程を示す工程別断面図である。 １２・・・・・・ｎ型Ｚｎ５ｅ層（半導体結晶）、１３
゜１３′・・・・・・絶縁層、１４・・・・・・金層、
１４ａ・・開基部、１４ｂ・・・・・・突出部、１５・
・・・・・接触層。FIG. 1 is a sectional view showing a conventional example, and FIGS. 2A to 2D are step-by-step sectional views showing the manufacturing process of an embodiment of the present invention. 12...N-type Zn5e layer (semiconductor crystal), 13
゜13'...Insulating layer, 14...Gold layer,
14a...Open base portion, 14b...Protrusion portion, 15.
...Contact layer.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体結晶、該結晶上に積層された絶縁層、該絶縁層中
に位置する基部と上記絶縁層表面に突出した突出部とか
らなる金層、該金層の突出部及び上記絶縁層表面と部分
的＆日接触する活性な金属からなる接触層を備えたこと
を特徴とするＭＩＳ型半２　　導体装置。　　　　゛A semiconductor crystal, an insulating layer laminated on the crystal, a gold layer consisting of a base located in the insulating layer and a protrusion protruding from the surface of the insulating layer, the protrusion of the gold layer, and the surface and portion of the insulating layer. 1. An MIS type semi-conductor device characterized by comprising a contact layer made of an active metal that comes into contact with a target.゛
JP1983112510U 1983-07-20 1983-07-20 MIS type semiconductor device Pending JPS6020161U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1983112510U JPS6020161U (en) 1983-07-20 1983-07-20 MIS type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1983112510U JPS6020161U (en) 1983-07-20 1983-07-20 MIS type semiconductor device

Publications (1)

Publication Number Publication Date
JPS6020161U true JPS6020161U (en) 1985-02-12

Family

ID=30260797

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1983112510U Pending JPS6020161U (en) 1983-07-20 1983-07-20 MIS type semiconductor device

Country Status (1)

Country Link
JP (1) JPS6020161U (en)

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