JPS6020161U - Mis型半導体装置 - Google Patents

Mis型半導体装置

Info

Publication number
JPS6020161U
JPS6020161U JP1983112510U JP11251083U JPS6020161U JP S6020161 U JPS6020161 U JP S6020161U JP 1983112510 U JP1983112510 U JP 1983112510U JP 11251083 U JP11251083 U JP 11251083U JP S6020161 U JPS6020161 U JP S6020161U
Authority
JP
Japan
Prior art keywords
insulating layer
mis type
semiconductor device
type semiconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1983112510U
Other languages
English (en)
Inventor
田「淵」 一夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP1983112510U priority Critical patent/JPS6020161U/ja
Publication of JPS6020161U publication Critical patent/JPS6020161U/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07551Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/59Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/923Bond pads having multiple stacked layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/934Cross-sectional shape, i.e. in side view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/942Dispositions of bond pads relative to underlying supporting features, e.g. bond pads, RDLs or vias

Landscapes

  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】
第1図は従来例を示す断面図、第2図A〜Dは本考案の
一実施例装置の製造工程を示す工程別断面図である。 12・・・・・・n型Zn5e層(半導体結晶)、13
゜13′・・・・・・絶縁層、14・・・・・・金層、
14a・・開基部、14b・・・・・・突出部、15・
・・・・・接触層。

Claims (1)

    【実用新案登録請求の範囲】
  1. 半導体結晶、該結晶上に積層された絶縁層、該絶縁層中
    に位置する基部と上記絶縁層表面に突出した突出部とか
    らなる金層、該金層の突出部及び上記絶縁層表面と部分
    的&日接触する活性な金属からなる接触層を備えたこと
    を特徴とするMIS型半2  導体装置。    ゛
JP1983112510U 1983-07-20 1983-07-20 Mis型半導体装置 Pending JPS6020161U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1983112510U JPS6020161U (ja) 1983-07-20 1983-07-20 Mis型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1983112510U JPS6020161U (ja) 1983-07-20 1983-07-20 Mis型半導体装置

Publications (1)

Publication Number Publication Date
JPS6020161U true JPS6020161U (ja) 1985-02-12

Family

ID=30260797

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1983112510U Pending JPS6020161U (ja) 1983-07-20 1983-07-20 Mis型半導体装置

Country Status (1)

Country Link
JP (1) JPS6020161U (ja)

Similar Documents

Publication Publication Date Title
JPS6037239U (ja) 半導体ウエハ
JPS5834737U (ja) 半導体ウエ−ハ
JPS59109164U (ja) 半導体装置
JPS60144255U (ja) トランジスタ
JPS59112955U (ja) 半導体素子
JPS5860951U (ja) 半導体装置
JPS5984835U (ja) 半導体ペレツト
JPS6146755U (ja) 半導体デバイス
JPS58116258U (ja) 半導体レ−ザ
JPS59117149U (ja) ビ−ムリ−ド型半導体装置
JPS5967951U (ja) GaAs単結晶の電極構造
JPS6083258U (ja) 樹脂封止型半導体装置
JPS6020159U (ja) 集積回路半導体装置
JPS6018558U (ja) 薄膜トランジスタ素子
JPS6094836U (ja) 半導体装置
JPS5899841U (ja) 半導体装置
JPS5987140U (ja) 半導体ペレツト
JPS58159764U (ja) 磁電変換素子
JPS5945939U (ja) 半導体装置
JPS5829851U (ja) 半導体素子
JPS58147278U (ja) 混成集積回路装置
JPS60103860U (ja) 半導体レ−ザ装置
JPS5967933U (ja) 半導体電極取出構造
JPS58124963U (ja) 半導体素子
JPS60153534U (ja) ビ−ムリ−ド型半導体素子