JPS60201879A - Diamond grinding wheel composed of deposited diamond particles - Google Patents
Diamond grinding wheel composed of deposited diamond particlesInfo
- Publication number
- JPS60201879A JPS60201879A JP5804584A JP5804584A JPS60201879A JP S60201879 A JPS60201879 A JP S60201879A JP 5804584 A JP5804584 A JP 5804584A JP 5804584 A JP5804584 A JP 5804584A JP S60201879 A JPS60201879 A JP S60201879A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- substrate
- polishing
- artificial diamond
- dispersed phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
- B24D3/06—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements
- B24D3/10—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements for porous or cellular structure, e.g. for use with diamonds as abrasives
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】 この発明は、ダイヤモンド研磨砥石にかがシ。[Detailed description of the invention] This invention applies to diamond polishing whetstones.
特に析出生成させた人工ダイヤモンド粒にて構成された
新規なダイすモンド研磨砥石に関するものである。In particular, the present invention relates to a new diamond grinding wheel composed of precipitated artificial diamond grains.
従来、一般に、超硬合金やその他のサーメット、さらに
セラミックスやガラスなどの研削・研磨にはダイヤモン
ド研磨砥石が用いられている。Conventionally, diamond polishing wheels have been generally used for grinding and polishing cemented carbide, other cermets, ceramics, glass, and the like.
この従来ダイヤモンド研磨砥石は1例えばMやM合金の
基体の研磨作用面に、結合剤として、レジン樹脂や、
Cuまたuyiなどの金属を用いて、天然ダイヤモンド
粒、あるいは超高圧高温合成によつて製造された人工ダ
イヤモンド粒全分散結合させた構造をもつものである。This conventional diamond polishing wheel has a base material made of, for example, M or M alloy, and the polishing surface is coated with a resin resin as a binder.
It has a structure in which natural diamond grains or artificial diamond grains manufactured by ultra-high pressure and high temperature synthesis are fully dispersed and bonded using a metal such as Cu or uyi.
したがって、上記の従来ダイヤモンド砥石においては、
天然ダイヤモンド粒や人工ダイヤモンド粒が高価である
ばかシでなく、研磨面に影響を及ぼすダイヤモンド粒を
できるだけ狭い範囲の粒度分布に収めなければならない
ため、著しく長時間の分級工程を必要とす、ることから
、その製造コストは高くならざる全得ないものであった
。Therefore, in the conventional diamond grinding wheel mentioned above,
Natural diamond grains and artificial diamond grains are not expensive, but diamond grains that affect the polished surface must be kept within a particle size distribution as narrow as possible, which requires an extremely long classification process. Therefore, the manufacturing cost was unavoidably high.
そこで、本発明者等は、上述のような観点から。Therefore, the inventors of the present invention, from the above-mentioned viewpoint.
狭い範囲内の粒度分布をもったダイヤモンド粒で構成さ
れたダイヤモンド研磨砥石全製造コスト安く製造すべく
研究を行なった結果、まず1通常の粉末冶金法を用いて
、基体全体、あるいは基体の少なくとも研磨作用面部分
音、分散相としてW。As a result of research aimed at manufacturing a diamond abrasive wheel composed of diamond grains with a narrow particle size distribution at a lower overall manufacturing cost, we found that: (1) using a conventional powder metallurgy method, the entire base material, or at least the polishing of the base material; W as active surface partial, dispersed phase.
Mo、およびNb、並びにその合金のうちの1種以上が
存在する組織を有する焼結合金で製造し、前記の研磨作
用面部材は、ステンレス鋼やM合金などで製造された心
材あるいは本体に焼はめあるいはろう付けすることによ
り基体とし、ついでこの基体の研磨作用面を通常の人工
ダイヤモンド析出生成法、すなわち、反応混合ガス全加
熱し、活性化する手段として、
(a) 例えば特開昭58−91100号公報に記載さ
れるような熱電子放射材を用いる方法。It is manufactured from a sintered alloy having a structure in which one or more of Mo, Nb, and their alloys are present, and the polishing surface member is manufactured by sintering a core material or a main body made of stainless steel, M alloy, etc. A substrate is formed by fitting or brazing, and then the polishing surface of this substrate is used as a means for producing conventional artificial diamond precipitation, that is, by completely heating the reaction mixture gas and activating it. A method using a thermionic emitting material as described in Japanese Patent No. 91100.
(b) 例えば特開昭58−135117号公報に記載
されるような高周波によるプラズマ放電を利用する方法
、
(C) 例えば特開昭58−110494号公報に記載
されるようなマイクロ波によるプラズマ放電全利用する
方法。(b) A method using high frequency plasma discharge as described in, for example, JP-A No. 58-135117; (C) Plasma discharge using microwaves as described in, for example, JP-A-58-110494. How to use all.
以上(a)〜(C)のいずれかの方法によって処理する
と、主として前記研磨作用面における分散相に強固な密
着力で人工ダイヤモンドが析出生成するようになシ、こ
の結果の前記分散相上に析出生成した人工ダイヤモンド
粒に粒度分布がきわめて狭い範囲内にあることから、こ
れを研磨砥石として使用した場合、すぐれた砥石性能を
発揮するようになり、さらにこの表面にNiなどの金属
表面層を、通常の化学蒸着法または物理蒸着法にて蒸着
形成した勺、あるいは電解メッキ法または無電解メッキ
法によシメツキ形成した場合には、前記析出生成人工ダ
イヤモンド粒の密着性が一段と向上するようになり、し
かもこのダイヤモンド研磨砥石の製造コストは著しく安
価であるという知見を得たのである。When treated by any of the methods (a) to (C) above, artificial diamond is precipitated and formed with strong adhesion to the dispersed phase mainly on the polishing surface. Since the particle size distribution of the precipitated artificial diamond grains is within an extremely narrow range, when used as a polishing wheel, it exhibits excellent whetstone performance. In the case of evaporation formation by ordinary chemical vapor deposition method or physical vapor deposition method, or shimetuki formation by electrolytic plating method or electroless plating method, the adhesion of the precipitated artificial diamond particles is further improved. Moreover, they found that the manufacturing cost of this diamond polishing whetstone is extremely low.
この発明は、上記知見にもとづいてなされたものであっ
て、
(1)基体全体または基体の少なくとも研磨作用面部分
が、分散相としてW、、Mo、およびNb、並びにその
合金のうちの1種以上が存在する組織を有する焼結合金
で構成され、かつ前記基体の研磨作用面における前記分
散相上には人工ダイヤモンド析出生成法によシ形成した
人工ダイヤモンド粒が密着した構造を有するダイヤモン
ド研磨砥石。The present invention has been made based on the above findings, and includes the following: (1) The entire substrate or at least the polishing surface portion of the substrate contains one type of W, Mo, Nb, or an alloy thereof as a dispersed phase. A diamond polishing whetstone, which is composed of a sintered alloy having a structure in which the above exists, and has a structure in which artificial diamond grains formed by an artificial diamond precipitation method are closely attached to the dispersed phase on the polishing surface of the base. .
(2)基体全体または基体の少なくとも研磨作用面部分
が、分散相としてW、Mo、およびNb、並びにその合
金のうちの1種以上が存在する組織を有する焼結合金で
構成され、かつ前記基体の研磨作用面における前記分散
相上には人工ダイヤモンド析出4:lj!2法により形
1j121−た人工ダイヤモンド粒が密着した構造を有
し、さらにその表面に蒸着またはメッキによ)形成した
金属表面層金有するダイヤモンド研磨砥石。(2) The entire substrate or at least the polishing surface portion of the substrate is composed of a sintered alloy having a structure in which one or more of W, Mo, and Nb and alloys thereof are present as a dispersed phase, and the substrate Artificial diamond is precipitated on the dispersed phase on the polishing surface of 4:lj! A diamond polishing whetstone having a structure in which artificial diamond grains shaped like 1j121-2 are closely adhered by the 2nd method, and further having a metal surface layer formed by vapor deposition or plating on the surface thereof.
に特徴を有するものである。It has the following characteristics.
つぎに、この発明のダイヤモンド研磨砥石を実施例によ
シ具体的に説明する。Next, the diamond polishing grindstone of the present invention will be specifically explained using examples.
実施例 1
通常の粉末冶金法にしたがって、原料粉末として、平均
粒径:1.2μmf有するW粉末、同3μmのN1粉宋
、および同5μmのOu粉末を用意し、これら原料粉末
t−1容量係で、W:80%、Ni:15係。Example 1 According to a normal powder metallurgy method, W powder having an average particle size of 1.2 μm, N1 powder having an average particle size of 3 μm, and Ou powder having an average particle size of 5 μm were prepared, and the t-1 volume of these raw material powders was W: 80%, Ni: 15.
Cu:5%の配合組成に配合し、この配合粉末を。Cu: 5% blended powder.
直径=6閣φの鋼球音用いたボールミルにて、溶媒とし
てエチルアルコール全使用して72時間湿式混合し、乾
燥した後、外径ニア0mmφX内径:50mφX厚さ=
51+II++の寸法をもったリング状圧粉体にプレス
成形し、ついでこの圧粉体を、水素雰囲気中、温度:1
400℃に2時間保持の条件で焼結することによって1
分散相としてWが存在する組織を有するW基焼結合金製
の研磨作用面部材を製造し、さ−らにこの研磨作用面部
材1JIs・5US310のステンレス鋼で製造された
カップ状砥石本体にろう付けして砥石基体とし、引続い
て、この砥石基体を、反応混合ガスを加熱し、活性化す
る手段として、例えば金属タングステン製フィラメント
の熱電子放射材音用いる。特開昭58−91100号公
報に記載されるような人工ダイヤモンド析出生成装置に
装入医
反応容器:外径120■φを有する石英管、反応混合ガ
ス組成:容量割合で、C!H4/H2= 1/100、
熱電子放射材と砥石基体の研磨作用面との距離= 15
N・
反応容器内雰囲気圧力ニ l Q torr・熱電子放
射材の加熱温度:2200℃、熱電子放射材による上記
研磨作用面の加熱温度= 750 ℃。Wet-mixed for 72 hours using ethyl alcohol as a solvent in a ball mill using a steel ball with a diameter of 6 mm, and after drying, outer diameter near 0 mm x inner diameter: 50 m x thickness =
It is press-molded into a ring-shaped green compact with dimensions of 51+II++, and then this green compact is heated in a hydrogen atmosphere at a temperature of 1
1 by sintering at 400℃ for 2 hours.
A polishing surface member made of a W-based sintered alloy having a structure in which W is present as a dispersed phase is manufactured, and a cup-shaped grindstone body made of stainless steel of 1JIs/5US310 is coated with wax. The grindstone substrate is then used as a means for heating and activating the reaction mixture using a thermionic emitter, for example a filament made of tungsten metal. Medical reaction vessel: a quartz tube with an outer diameter of 120 φ, reaction mixture gas composition: volume ratio, C! H4/H2 = 1/100, distance between thermionic emitting material and the polishing surface of the grindstone base = 15
N. Atmospheric pressure inside the reaction vessel Nl Q torr. Heating temperature of the thermionic emitting material: 2200°C. Heating temperature of the polishing surface by the thermionic emitting material = 750°C.
反応処理時間:20時間、
の条件で処理することによって、上記砥石基体の研磨作
用面における上記蒸着層のW分散相上に、平均粒径:4
μmの人工ダイヤモンド粒を1分布面積:60%の割合
で析出化成せしめた。Reaction treatment time: 20 hours By processing under the following conditions, an average particle size of 4.
Artificial diamond grains of μm size were precipitated at a distribution area ratio of 60%.
つぎに、この結果得られた本発明ダイヤモンド研磨砥石
、さらにその表面に1通常のスパッタリング法?用い、
反応容器内真空度: 2X 10 torr、雰囲気:
Arb
Niターゲットへの印加電圧ニー1200V。Next, the diamond abrasive grinding wheel of the present invention obtained as a result, and its surface were further coated with a normal sputtering method. Used, vacuum degree inside the reaction vessel: 2X 10 torr, atmosphere:
The applied voltage to the Arb Ni target was 1200V.
砥石(4回転/分で回転〕への印加電圧ニー 200v
。Voltage applied to the grindstone (rotating at 4 rotations/min): 200v
.
処理時間:1時間。Processing time: 1 hour.
の条件で平均層厚:2μmのNiからなる金属表面層全
蒸着させた本発明表面被覆ダイヤモンド研磨砥石につい
て、研磨面が270” K調整され、かつ平面10n+
mx厚さ5咽の寸法全有する窒化けい素基セラミックス
試片の前記研磨面を研磨して、0.28に仕上げるのに
要する時間全測定したところ、いずれも25秒を要し、
この所要時間はレジンボンドの同種の従来ダイヤモンド
研磨砥石と同等のものであった。Regarding the surface-coated diamond polishing wheel of the present invention, in which a metal surface layer consisting of Ni with an average layer thickness of 2 μm was completely deposited under the conditions of
When the time required to polish the polished surface of the silicon nitride-based ceramic specimen having the dimensions of 5 m x thickness to 0.28 mm was measured, it took 25 seconds in each case.
This required time was equivalent to that of a conventional resin-bonded diamond polishing whetstone.
実施例 2
同様に、通常の粉末冶金法にしたがい、原料粉末として
、平均粒径:1.5μmi有するMo粉末、同1.8μ
mf有するnb粉末、同2μmを有するCO粉末。Example 2 Similarly, according to the usual powder metallurgy method, Mo powder having an average particle size of 1.5 μm and 1.8 μm were used as raw material powders.
nb powder with mf, CO powder with same 2 μm.
同5μmのCu粉末、および同5μmのMn粉末を用意
し。A Cu powder with a diameter of 5 μm and a Mn powder with a diameter of 5 μm were prepared.
これら原料粉宋音、容量係で、Mo:30係、Nb二2
5%、Co:204.Ou:17%、Mn:8%からな
る配合組成に配合し、またリング状圧粉体の形状を、外
径:50咽φX内径:30謂φ×厚さ:15mmとする
と共に、その研磨作用面となる外周面の中央部に円周に
そって半径:5imの凸条全有するものとし、かつ焼結
条件を、水素雰囲気中。These raw material powder Song Yin, capacity section, Mo: 30 section, Nb 22
5%, Co:204. The composition of Ou: 17% and Mn: 8% was blended, and the shape of the ring-shaped green compact was set to outer diameter: 50 mm x inner diameter: 30 mm x thickness: 15 mm, and its polishing action was A convex strip with a radius of 5 mm is provided along the circumference at the center of the outer circumferential surface, and the sintering conditions are in a hydrogen atmosphere.
温度:1350℃に1時間保持とする以外は、実施例1
におけると同一の条件で、分散相としてMo。Example 1 except that the temperature was kept at 1350°C for 1 hour.
Mo as the dispersed phase under the same conditions as in .
Wb、およびその合金が存在する組織を有する焼結合金
製の研磨作用面部材を製造し、さらにこの研磨作用面部
材を、直径:30閣φX厚さ=15晒の寸法を有する真
ちゅう製の心材に焼ばめすることによりフォームド砥石
基体とし、引続いて、この砥石基体を1反応混合ガスを
加熱し、活性化する手段として、マイクロ波によるプラ
ズマ放電を利用する、特開昭58−’110494号公
報に記載されるような人工ダイヤモンド析出生成装置に
装入し。A polishing surface member made of a sintered alloy having a structure in which Wb and its alloys are present is manufactured, and this polishing surface member is made of a brass core material having dimensions of diameter: 30mm x thickness = 15mm. JP-A-58-' discloses a method of forming a formed whetstone base by shrink-fitting the whetstone base, and then heating the whetstone base with a reaction mixture gas and using plasma discharge by microwave as a means of activating the whetstone base. It was charged into an artificial diamond precipitation generating apparatus as described in Japanese Patent No. 110494.
反応容器:直径120甜φを有する石英管、反応混合ガ
ス組成二容量割合で、C’H4/H2/Ar=1/10
0/10 )。Reaction vessel: quartz tube with a diameter of 120 mm, reaction mixture gas composition in two volume ratio, C'H4/H2/Ar = 1/10
0/10).
反応容器内の雰囲気圧力ニ 1 torr、マイクロ波
: 2.45 GH2。Atmospheric pressure in the reaction vessel: 1 torr, microwave: 2.45 GH2.
反応処理時間=24時間。Reaction treatment time = 24 hours.
の条件で処理することにより、上記砥石本体の研磨作用
面における分散相上に平均粒径:6μm’z有する人工
ダイヤモンド粒を50係の分布面積割合で析出生成させ
た。By processing under the following conditions, artificial diamond grains having an average grain size of 6 μm'z were precipitated and formed at a distribution area ratio of 50 on the dispersed phase on the polishing surface of the grindstone body.
ついで、この結果得られた本発明ダイヤモンド研磨砥石
、並びにさらにこの表面に通常の条件にて平均層厚:3
μmのCuヲ電気メッキして金属表面層を形成した本発
明表面被覆ダイヤモンド研磨砥石を用い、Co二12重
量係、WC:残シからなる組成を有し、かつプロファイ
ル加工により半径:4、8 mmの凹みを形成しである
超硬合金素材の前記凹みを仕上げ研磨したところ、11
0秒を要した。Next, the resulting diamond polishing wheel of the present invention and its surface were further coated with an average layer thickness of 3 under normal conditions.
Using the surface-coated diamond polishing wheel of the present invention in which a metal surface layer is formed by electroplating Cu of μm, it has a composition of Co212 weight ratio, WC: residue, and is profiled to have a radius of 4 and 8. When a recess of mm was formed and the recess of the cemented carbide material was final polished, the result was 11 mm.
It took 0 seconds.
この所要時間はレジンボンドの同種の従来ダイヤモンド
研磨砥石と同等のものであった。This required time was equivalent to that of a conventional resin-bonded diamond polishing whetstone.
上述のように、この発明のダイヤモンド研磨砥石は、こ
fl’i構成するダイヤモンド粒が強固な密着力で結合
し、かつその粒度も焼結合金における分散相によって、
きわめて狭い範囲内に分布しているので、すぐれた研磨
性能を著しく長期に亘って発揮し、さらにダイヤモンド
粒全通常の人工ダイヤモンド析出生成法によって形成す
ることができるので、整粒の人工ダイヤモンド粒が形成
されることと合まって製造コストが安いなど工業上有用
な特性を有するのである。As described above, in the diamond polishing wheel of the present invention, the diamond grains constituting the diamond grains are bonded with strong adhesion, and the grain size is also determined by the dispersed phase in the sintered alloy.
Because they are distributed within an extremely narrow range, they exhibit excellent polishing performance over an extremely long period of time.Furthermore, the diamond grains can be formed using the normal artificial diamond precipitation method, making it possible to produce well-sized artificial diamond grains. It has industrially useful properties such as low manufacturing cost and low manufacturing cost.
出願人 三菱金属株式会社 代理人 富 1)和 夫 外1名Applicant: Mitsubishi Metals Corporation Agent Tomi 1) Kazuo and 1 other person
Claims (2)
分が1分散相としてW、Mo、およびNb、並びにその
合金のうちの1種以上が存在する組織を有する焼結合金
で構成され、かつ前記基体の研磨作用面における前記分
散相上には人工ダイヤモンド析出生成法によシ形成した
人工ダイヤモンド粒が密着した構造を有することを特徴
とする析出生成人工ダイヤモンド粒で構成されたダイヤ
モンド研磨砥石。(1) The entire substrate or at least the polishing surface portion of the substrate is composed of a sintered alloy having a structure in which one or more of W, Mo, and Nb and alloys thereof are present as one dispersed phase, and the substrate A diamond polishing wheel made of precipitated artificial diamond grains, characterized in that it has a structure in which artificial diamond grains formed by an artificial diamond precipitation method adhere to the dispersed phase on the polishing surface.
が1分散相としてW、Mo、およびNb、並びにその合
金のうちの1種以上が存在する組織を有する焼結合金で
構成され、かつ前記基体の研磨作用面における前記分散
相上には人工ダイヤモンド析出生成法により形成した人
工ダイヤモンド粒が密着した構造を有し、さらにその表
面に蒸着またはメッキによシ形成した金属表面層を有す
ることを特徴とする析出生成人工ダイヤモンド粒で構成
されたダイヤモンド研磨砥石。(2) The entire base or at least the polishing surface portion of the base is composed of a sintered alloy having a structure in which one or more of W, Mo, and Nb, and their alloys are present as one dispersed phase, and the base It has a structure in which artificial diamond grains formed by an artificial diamond precipitation method are closely attached to the dispersed phase on the polishing surface, and further has a metal surface layer formed by vapor deposition or plating on the surface. A diamond polishing wheel composed of precipitated artificial diamond grains.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5804584A JPS60201879A (en) | 1984-03-26 | 1984-03-26 | Diamond grinding wheel composed of deposited diamond particles |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5804584A JPS60201879A (en) | 1984-03-26 | 1984-03-26 | Diamond grinding wheel composed of deposited diamond particles |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60201879A true JPS60201879A (en) | 1985-10-12 |
| JPH0116625B2 JPH0116625B2 (en) | 1989-03-27 |
Family
ID=13072957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5804584A Granted JPS60201879A (en) | 1984-03-26 | 1984-03-26 | Diamond grinding wheel composed of deposited diamond particles |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60201879A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5855562A (en) * | 1981-09-28 | 1983-04-01 | Hitachi Ltd | Polishing dish and manufacture thereof |
| JPS58135117A (en) * | 1982-01-29 | 1983-08-11 | Natl Inst For Res In Inorg Mater | Diamond manufacturing method |
-
1984
- 1984-03-26 JP JP5804584A patent/JPS60201879A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5855562A (en) * | 1981-09-28 | 1983-04-01 | Hitachi Ltd | Polishing dish and manufacture thereof |
| JPS58135117A (en) * | 1982-01-29 | 1983-08-11 | Natl Inst For Res In Inorg Mater | Diamond manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0116625B2 (en) | 1989-03-27 |
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