JPS60202948A - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JPS60202948A
JPS60202948A JP59061381A JP6138184A JPS60202948A JP S60202948 A JPS60202948 A JP S60202948A JP 59061381 A JP59061381 A JP 59061381A JP 6138184 A JP6138184 A JP 6138184A JP S60202948 A JPS60202948 A JP S60202948A
Authority
JP
Japan
Prior art keywords
copper wire
wire
bonding
semiconductor chip
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59061381A
Other languages
Japanese (ja)
Inventor
Saneyasu Hirota
弘田　実保
Kazumichi Machida
一道 町田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59061381A priority Critical patent/JPS60202948A/en
Publication of JPS60202948A publication Critical patent/JPS60202948A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07141—Means for applying energy, e.g. ovens or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07521—Aligning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H10W72/522—Multilayered bond wires, e.g. having a coating concentric around a core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Wire Bonding (AREA)

Abstract

PURPOSE:To realize the correct state of joining without generating cracks in a semiconductor chip by lowering the hardness of a copper wire by heating the nose section of a capillary chip when the wire is jointed with an electrode. CONSTITUTION:In an ultrasonic combination thermocompression bonding type ball bonding consisting of a copper wire 1, an aluminum electrode 2, a semiconductor chip 3, a lead 4, a ball bonding section 5 and a stitch bonding section 6, the nose section of a capillary chip 7 is heated at 100-150 deg.C by a heater 10. Accordingly, the strength and hardness, of the copper wire 1 is lowered through heating, and cracks are hardly generated in the semiconductor chip, thus enabling the use of the copper wire in place of a gold wire.

Description

【発明の詳細な説明】 ［発明の技術分野〕 この発明は、工Ｃやトランジスタなどの製造において、
金属細線を接続するワイヤボンディング方法、特にボー
ルボンディング方法に関するものである。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention provides a method for manufacturing industrial C, transistors, etc.
The present invention relates to a wire bonding method for connecting thin metal wires, particularly a ball bonding method.

〔従来技術〕[Prior art]

従来ボンディング用金属細線としては金線が使用されて
いるが、コストが高くつくという欠点があるため、金に
替えて銅ワイヤを用いることが考えられる。なお、ワイ
ヤボンディングにおいては、超音波併用熱圧着方式のボ
ールボンディングが主に用いられる。第１図にはボンデ
ィング部分の部分正面図を示す。図において（１）は銅
ワイヤ、（２）はアルミ電極、（３）は、半導体チップ
この場合はＳｉチップ、（４）はリード、（５）はボー
ルポンド部、（６）はステッチボンド部を示す。この方
式はワイヤの先端をアーク入熱で溶融、凝固させた時形
成される球状部をアルミ電極（２）に接合させる事を特
徴としているが、銅ワイヤ（１）を用いた場合、硬度お
よび加工硬化指数が金に比べて高いため、所望のボンデ
ィング強度を得ようとすれば上記過程において、超音波
の出力すなわち振動振幅を金に比べて大きく設定するこ
とが必要となる。ところが、超音波の振動振幅を大きく
することは、Ｓｉチップ（３）にクラックを発生させる
要因となる。第２図は円筒状キャピラリチップの軸に浴
って貫通孔が囲いており貫通孔から銅ワイヤが供給され
ている図でポンディング時のクラックの発生状況を示す
。第２図（ａ）は銅ワイヤ接合前、第２図（ｂ）は銅ワ
イヤ接合後を示している。図において、（７）はキャピ
ラリチップ、（８）は銅ワイヤの球状部、（９）は発生
したクラックである。このクラック（９）は半導体素子
の電気特性劣化の原因となる懸念があシ、また焼鈍され
た純銅ワイヤを使用しても、必要な接合強度を得ようと
すると、５〜１０％の確率で発生していた。Conventionally, gold wires have been used as fine metal wires for bonding, but they have the drawback of being expensive, so it is conceivable to use copper wires instead of gold. Note that, in wire bonding, ball bonding using a thermocompression bonding method combined with ultrasonic waves is mainly used. FIG. 1 shows a partial front view of the bonding part. In the figure, (1) is a copper wire, (2) is an aluminum electrode, (3) is a semiconductor chip, in this case a Si chip, (4) is a lead, (5) is a ball bond part, and (6) is a stitch bond part. shows. This method is characterized by joining the spherical part formed when the tip of the wire is melted and solidified by arc heat input to the aluminum electrode (2), but when using the copper wire (1), the hardness and Since the work hardening index is higher than that of gold, in order to obtain the desired bonding strength, it is necessary to set the ultrasonic output, that is, the vibration amplitude, to be larger than that of gold in the above process. However, increasing the vibration amplitude of the ultrasonic wave causes cracks to occur in the Si chip (3). FIG. 2 shows a through hole surrounding the axis of a cylindrical capillary chip and a copper wire being supplied from the through hole, showing how cracks occur during bonding. FIG. 2(a) shows the copper wire before bonding, and FIG. 2(b) shows the copper wire after bonding. In the figure, (7) is the capillary chip, (8) is the spherical part of the copper wire, and (9) is the generated crack. There is a concern that this crack (9) may cause deterioration of the electrical properties of the semiconductor element, and even if annealed pure copper wire is used, if you try to obtain the necessary bonding strength, there is a probability of 5 to 10%. It was occurring.

〔発明の概要〕[Summary of the invention]

この発明は、上記のような欠点を除去するためになされ
たもので、半導体チップ上に設けられた電極にワイヤボ
ンダのキャピラリチップを用いて銅ワイヤを超音波振動
で接合させるものにおいて、上記銅ワイヤを電極に接合
する際上記キャピラリチップ先端部を加熱することによ
って、銅ワイヤの強度すなわち硬度を低下させ、半導体
チップにクラックを発生させずに健全な接合状態の得ら
れるワイヤポンディング方法を提供することを目的とし
ている。The present invention has been made to eliminate the above-mentioned drawbacks, and includes bonding a copper wire to an electrode provided on a semiconductor chip by ultrasonic vibration using a capillary tip of a wire bonder. To provide a wire bonding method in which the strength or hardness of the copper wire is reduced by heating the tip of the capillary tip when bonding the copper wire to an electrode, and a sound bonding state can be obtained without causing cracks in the semiconductor chip. The purpose is to

〔発明の実施例〕[Embodiments of the invention]

以下、この発明の一実施例を図について説明する。第３
図は、この発明のポンディング方法の一実施例を示す正
面図で、図において（１０）はキャピラリチップ加熱用
のヒータである。また第４図は銅ワイヤ（１）のビッカ
ース硬さくＨｖ）の温度（’［’）による変化を示した
特性図であり、加熱温度を高くするに伴なって硬さが低
下しＴ＝１００℃において室温での硬さくＨｖ）の９０
％、１５０℃で８０％程度に低下することが判る。また
点線は銅ワイヤの断線を示し、１５０℃以上の温度に加
熱することは銅ワイヤ（１）の表面酸化が故しくなるこ
と、およびキャピラリチップ（７）、内面と銅ワイヤ（
１）との間の摩擦係数が大きくなり銅ワイヤ（１）の強
度低下とあいまって破断が相栄的に発生し易くなること
から好ましくない。第５図は必要な接合強度を得るため
に必要なキャピラリチップ（７）先端の温度（Ｔ）と超
音波振動の振幅（ロ）の関係を示す特性図である。温度
Ｔ＝１００℃で超音波振動の振幅に）を常温の８７−に
下げることができ、Ｔ＝１００℃以上に設定すると、Ｓ
ｌのクラック（９）は発生しなかった。しかしＴ＝１０
０℃以下、α＝　１．７　Ｍｍ以上の条件では最大で１
０％位の確率でクラック（９）が発生し、Ｔ＝１５０℃
以上に設定するとクラック（９）は発生しないが、上記
のような、銅ワイヤ（１）の酸化、破断という不良を発
生する。An embodiment of the present invention will be described below with reference to the drawings. Third
The figure is a front view showing an embodiment of the bonding method of the present invention, and in the figure (10) is a heater for heating the capillary chip. Fig. 4 is a characteristic diagram showing the change in Vickers hardness (Hv) of the copper wire (1) with temperature ('['), and as the heating temperature increases, the hardness decreases until T = 100. Hardness (Hv) at room temperature at ℃ 90
%, it can be seen that it decreases to about 80% at 150°C. In addition, the dotted line indicates a break in the copper wire, and heating to a temperature of 150°C or higher will cause the surface oxidation of the copper wire (1) to deteriorate, and the capillary tip (7), inner surface and copper wire (
This is not preferable because the coefficient of friction between the copper wire (1) and the copper wire (1) increases, which, together with a decrease in the strength of the copper wire (1), increases the likelihood of breakage. FIG. 5 is a characteristic diagram showing the relationship between the temperature (T) at the tip of the capillary tip (7) and the amplitude of ultrasonic vibration (b) necessary to obtain the necessary bonding strength. At temperature T = 100°C, the amplitude of ultrasonic vibration) can be lowered to 87 - of room temperature, and when T = 100°C or higher, S
No crack (9) occurred. But T=10
Under the conditions of 0°C or less and α = 1.7 Mm or more, the maximum
Crack (9) occurs with a probability of about 0%, and T = 150℃
If the setting is above, cracks (9) will not occur, but defects such as oxidation and breakage of the copper wire (1) as described above will occur.

以上の結果からキャピラリチップ先端（７）の温度（Ｔ
Ｊを１００℃〜１５０℃の温度範囲に加熱することが最
も実用的であることが判明した。From the above results, the temperature (T
It has been found to be most practical to heat J to a temperature range of 100°C to 150°C.

なお、上記実施例においては、加熱手段としてヒータ（
ｌＯ）を用いた例を示したが、レーデ、熱風などの別の
熱源を用いてキャピラリチップ（７）先端を加熱しても
よい。In addition, in the above embodiment, a heater (
The tip of the capillary tip (7) may be heated using another heat source such as Rede or hot air.

［発明の効果〕 以上のように、この発明によれば半導体チップ上に設け
られた電極にワイヤボンダのキャピラリチップを用いて
銅ワイヤを超音波振動で接合させるものにおいて、上記
銅ワイヤを電極に接合する際、上記キャピラリチップ先
端部を加熱するようにしたので、銅ワイヤの強度すなわ
ち硬度を低下させ、半導体チップにクラックをほとんど
発生させずに健全な接合状態を得ることが出来るように
なり、現在ワイヤポンディング方法に用いられている金
ワイヤに代わって銅ワイヤの使用がり能になり、大幅な
材料原紙が実現できるという効果がある。[Effects of the Invention] As described above, according to the present invention, in an apparatus in which a copper wire is bonded to an electrode provided on a semiconductor chip by ultrasonic vibration using a capillary tip of a wire bonder, the copper wire is bonded to the electrode. When bonding, the tip of the capillary tip is heated, which reduces the strength or hardness of the copper wire, making it possible to obtain a healthy bonding state with almost no cracks in the semiconductor chip. It is possible to use copper wire in place of the gold wire used in the wire bonding method, which has the effect of making it possible to use a large amount of base paper.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は半導体チップのワイヤポンディング部の部分正
面図、第２図はポンディング時のクランク発生状況を示
す断面図、第３図はこの発明の一実施例を示す正面図、
第４図は銅ワイヤのビッカース強度の湿度による変化を
示す特性図、第５図は必要な接合強度を得るための温度
と超音波振幅並びにクラック発生率の関係を示す特性図
である。 （１）・・・銅ワイヤ、（２）・・・電極、（３）・・
・半導体チップ、（４）・・・リード、　（５）・・・
ポールボンド部、（６）・・・ステッチボンド部、（７
）・・・キャビクリチップ、（８）・・・銅ポール、（
９）・・・クラック、（ｌＯ５）・・・ヒータなお図中
同一符号は同−又は相当部分を示す。 第１図 第２図 （１２）　（１） 第３図FIG. 1 is a partial front view of a wire bonding part of a semiconductor chip, FIG. 2 is a cross-sectional view showing how a crank is generated during bonding, and FIG. 3 is a front view showing an embodiment of the present invention.
FIG. 4 is a characteristic diagram showing changes in Vickers strength of copper wire due to humidity, and FIG. 5 is a characteristic diagram showing the relationship between temperature, ultrasonic amplitude, and crack occurrence rate for obtaining the necessary bonding strength. (1)...Copper wire, (2)...Electrode, (3)...
・Semiconductor chip, (4)...Lead, (5)...
Pole bond part, (6)... Stitch bond part, (7
)...cabinet chip, (8)...copper pole, (
9)...Crack, (lO5)...Heater Note that the same reference numerals in the drawings indicate the same or corresponding parts. Figure 1 Figure 2 (12) (1) Figure 3

Claims (2)

【特許請求の範囲】[Claims] （１）半導体チップ上に設けられた電極にワイヤボンダ
のキャピラリチップを用いて銅ワイヤを超音波振動で接
合させるものにおいて、上記銅ワイヤを電極に接合する
際上記亡ヤピラリチップ先端部を加熱することを特徴と
するワイヤボンディング方法。(1) In a device in which a copper wire is bonded to an electrode provided on a semiconductor chip by ultrasonic vibration using a capillary tip of a wire bonder, the tip of the capillary tip is not heated when bonding the copper wire to the electrode. Characteristic wire bonding method. （２）キャピラリチップ先端部を１００’Ｃ〜１５０℃
の温度範囲で加熱するようにした特許請求の範囲第１項
記載のワイヤボンディング方法。(2) Heat the tip of the capillary tip to 100'C to 150°C.
The wire bonding method according to claim 1, wherein the wire bonding method is heated in a temperature range of .
JP59061381A 1984-03-27 1984-03-27 Wire bonding method Pending JPS60202948A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59061381A JPS60202948A (en) 1984-03-27 1984-03-27 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59061381A JPS60202948A (en) 1984-03-27 1984-03-27 Wire bonding method

Publications (1)

Publication Number Publication Date
JPS60202948A true JPS60202948A (en) 1985-10-14

Family

ID=13169536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59061381A Pending JPS60202948A (en) 1984-03-27 1984-03-27 Wire bonding method

Country Status (1)

Country Link
JP (1) JPS60202948A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013171964A (en) * 2012-02-21 2013-09-02 Ultrasonic Engineering Co Ltd Ultrasonic wire bonding device and ultrasonic wire bonding method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013171964A (en) * 2012-02-21 2013-09-02 Ultrasonic Engineering Co Ltd Ultrasonic wire bonding device and ultrasonic wire bonding method

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