JPS60206143A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To separate the electric contact between a lead and an edge of element by a method wherein, after bonding a bump electrode on a semiconductor element to a finger lead on a film carrier, the lead is trimmed while heating the element and the lead. CONSTITUTION:A bump electrode 2 on a semiconductor element 1 is bonded to a finger lead 4 on a film carrier 3 and then the lead 4 is bent downward to come into contact with an edge of semiconductor element 1. Before performing a probing inspection, a heated stage 10 is laid immediately below the element 1 and the surface of semiconductor element 1 made of teflon etc. is pressurized downward by a pressurizing jig 11 not to scratch the surface thereof. Through these procedures, the lead 4 may be trimmed instantaneously while separating the electric contact between the finger lead 4 and the edge of the semiconductor element 1.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to lead shaping after connecting a plurality of lead groups to an electrode group on a semiconductor element.

(Structure of conventional example and its problems) A method of connecting a film carrier and a semiconductor element when a film carrier is used and a subsequent probe test will be described with reference to FIGS. 1, 2, and 3. 1 is a semiconductor element, 2 is a protruding electrode on the semiconductor element, 3 is a film carrier, 4 is a finger lead on the film carrier, 5 is a heating knob, 6 is a semiconductor element after bonding, 7 is a glove for inspection on the film carrier ) ξ7, 8 is a globe, and 9 is an insulating film such as an oxide film.

After aligning the protruding electrodes 2 on the semiconductor element 1 and the finger leads 4 on the film carrier 3, the heating tool 5
Heat and pressurize to join the two.

After the bonding is completed, the semiconductor element 6 is then subjected to a probe test to check the quality of the bonding. The glove test is carried out by bringing the glove 8 into contact with the test pad 7 located on the extension of the finger lead 4 of the film carrier 3, as shown in FIGS. 2 and 3. However, when bonding the protruding electrodes 2 on the semiconductor element 1 and the finger leads on the film keys A and 17A 3, the portions of the film carrier 3 and finger leads 4 near the heating ring 5 are heated due to the influence of heat from the heating tool 5. The finger leads 4 may be deformed and come into contact with the nip portion of the semiconductor element 1, as shown in FIG. An insulating film 9 such as an oxide film is formed on the edge of the semi-44-piece device 1 to facilitate cutting and dividing the semiconductor wafer into individual semiconductor devices.
except for. However, Si is generally directly exposed at the edge portions of the semiconductor element 1. Finger lead 4 due to thermal deformation of film carrier 3 and finger lead 4
If the semiconductor element 1 comes into contact with the edge portion of the semiconductor element 1, the semiconductor element 1 is determined to be defective during the probe test (even if the semiconductor element 1 is actually a good product that operates normally).

(Object of the Invention) Therefore, in order to eliminate the above-mentioned drawbacks, the present invention provides a method of breaking electrical contact between the lead 4 and the nip portion of the semiconductor element 1 before probe testing.

(Structure of the Invention) The present invention involves shaping the finger leads 4 while heating the semiconductor element 1 and the finger leads 4 during probe inspection and after bonding the protruding electrodes 2 on the semiconductor element 1 and the finger leads 4 on the film carrier 3. By doing so, electrical contact between the finger leads 4 and the edge portions of the semiconductor element 1 is cut off.

(Description of Embodiment) An embodiment according to the present invention will be described with reference to FIGS. 4 and 5. The same parts as in FIGS. 1, 2, and 3 are given the same numbers. 10 is a heating stage, 11 is a pressure jig, and 12 is a suction hole.

After the protruding electrodes 2 on the semiconductor element 1 and the finger leads 4 on the film carrier 3 are bonded, the finger leads 4 are bent downward and are in contact with the edge portions of the semiconductor element 1, as shown in FIG. In this state, the stage 1 is heated to about 300°C from below the semiconductor element 1 before the probe test.
Connect 0 to 1. Further, the semiconductor element 1 is pressurized from above the semiconductor element 1 using a pressing jig 11 made of Teflon or other such material that does not damage the surface of the semiconductor element. Since the finger leads 4 are easier to deform when heated than when heated at room temperature, the pressing force of the pressing jig 11 may be approximately several tens of grams.
It can be shaped in an extremely short time. This makes it possible to break electrical contact between the finger leads 4 and the edge portions of the semiconductor element 1. Pressure jig 1 on the surface of the semiconductor element
If you cannot press the suction hole 1 on the stage 1o.
2 is installed to heat the back surface of the semiconductor element and simultaneously suck it,
If you stop suction while pulling it slightly downward, you can get the same effect as the same thread.

As an embodiment of the present invention, a case has been described in which a protruding electrode 2 is formed on a semiconductor element 1, but conversely, the same effect can be obtained when a protruding object is formed at the tip of a finger lead 4 of a film carrier 3. can be expected.

(Effects of the Invention) As described above, according to the present invention, the contact between the edge portion of the semiconductor element and the finger lead can be completely cut off. After bonding the protruding electrodes on the semiconductor element and the finger leads on the film carrier, more than half of the ICs had at least one of the finger leads in contact with the edge of the semiconductor element, but by the method shown in the example , contact could be completely eliminated.

[Brief explanation of drawings]

FIG. 1 is a diagram showing a method of joining protruding electrodes on a semiconductor element and a lead group of a film carrier. FIG. 2 is a diagram at the time of probe inspection. FIG. 3 is a diagram showing the contact between the edge portion of the semiconductor element and the lead group. FIGS. 4 and 5 are diagrams showing embodiments of the present invention. DESCRIPTION OF SYMBOLS 1...Semiconductor element, 2...Protruding electrode, 3...Film gear rear, 4...Lead, 5...Heating sole, 6
Semiconductor element after bonding, 7...Inspection hat 8°
゛zo0-bu・9...Insulating film, 10...Heating stage,
11. Pressure jig, 12. Suction hole.

Claims (3)

[Claims] (1) After connecting a plurality of lead groups and an electrode group on a semiconductor element, applying force in a direction from the main surface of the semiconductor element toward the back surface while heating the semiconductor element and lead group to collectively shape the lead group. A method for manufacturing a semiconductor device, characterized by: (2) Claim No. 1, characterized in that the surface of the semiconductor element is pressed with a jig having a heat-resistant resin portion at the tip.
A method for manufacturing a semiconductor device according to section 1. (3) The semiconductor device according to claim (1), wherein the device is sucked by a suction hole of a stake on which the back surface of the semiconductor device is placed, and force is applied in a direction from the main surface to the back surface. manufacturing method.