JPS60206352A - Envelope generating circuit - Google Patents
Envelope generating circuitInfo
- Publication number
- JPS60206352A JPS60206352A JP59062805A JP6280584A JPS60206352A JP S60206352 A JPS60206352 A JP S60206352A JP 59062805 A JP59062805 A JP 59062805A JP 6280584 A JP6280584 A JP 6280584A JP S60206352 A JPS60206352 A JP S60206352A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- capacitor
- resistance
- output
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 19
- 230000010354 integration Effects 0.000 abstract description 6
- 230000005669 field effect Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 238000001914 filtration Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
- H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
- H03G3/3047—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers for intermittent signals, e.g. burst signals
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D1/00—Demodulation of amplitude-modulated oscillations
- H03D1/08—Demodulation of amplitude-modulated oscillations by means of non-linear two-pole elements
- H03D1/10—Demodulation of amplitude-modulated oscillations by means of non-linear two-pole elements of diodes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B7/00—Radio transmission systems, i.e. using radiation field
- H04B7/14—Relay systems
- H04B7/15—Active relay systems
- H04B7/204—Multiple access
- H04B7/212—Time-division multiple access [TDMA]
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04J—MULTIPLEX COMMUNICATION
- H04J3/00—Time-division multiplex systems
- H04J3/02—Details
- H04J3/10—Arrangements for reducing cross-talk between channels
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Landscapes
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- Digital Transmission Methods That Use Modulated Carrier Waves (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明は、時分割多重アクセス通信(以下、TD M
A 1ffl信という。)方式に用いられる送信バース
トの包絡線制御を実行するためのバースト包絡線発生回
路に関する。[Detailed description of the invention] [Technical field to which the invention pertains] The present invention relates to time division multiple access communication (hereinafter referred to as TDM).
A: It's called 1ffl Shin. The present invention relates to a burst envelope generation circuit for performing envelope control of transmission bursts used in the ) method.
Tr)MA通借方式では、位相シフトキーイング変調方
式(以下、PSK変調方式という。)が多用される。In the Tr) MA borrowing method, a phase shift keying modulation method (hereinafter referred to as PSK modulation method) is often used.
この変調方式の場合に、変調データの位相が0/πのよ
うに180℃の位相変化が起る時点では、搬送波になだ
らかなくびれが発生するために、この時点でスイソチイ
ングしてバースト制御を行うようにすると、搬送波のス
イッチイングによるスペクトラム拡散現象をある程度ま
で抑圧することができる。In the case of this modulation method, when a 180 degree phase change occurs such as when the phase of the modulated data is 0/π, a gentle constriction occurs in the carrier wave, so burst control is performed by switching at this point. By doing so, the spread spectrum phenomenon caused by carrier switching can be suppressed to a certain extent.
しかし、周波数変調方式(以下、IiM変調方式という
。)を採用し、一定包絡線の搬送波を矩形波にてバース
トスイソチイングを行うと、その゛影響でスペクトラム
が拡散し、他チャンネルに妨害を与えるだけでなく、自
局の受信機に対しても送受間干渉を起こす可能性がある
。このために、団変調方式でTDMA通信を行う場合に
は、PSK変調方式の包絡線に見るようななだらかな立
らl−I/1立ち下りを有するバースト波形の制御が必
要になる。However, when a frequency modulation method (hereinafter referred to as IiM modulation method) is adopted and a carrier wave with a constant envelope is burst isotuned using a square wave, the spectrum spreads as a result of this, causing interference to other channels. In addition to this, there is a possibility that interference between transmitting and receiving may occur in the receiver of the own station. For this reason, when performing TDMA communication using the collective modulation method, it is necessary to control a burst waveform having a gentle rise and fall of l-I/1, as seen in the envelope of the PSK modulation method.
この包絡線制御の方法の一つとしてノ、(車となるバー
スト包絡線を用意し、これと相似包絡線となるように制
御する方法が用いられており、この基準となるバースト
包絡綿を発生させる従来回路として、デジタル包絡線発
生回路が用いられ“ζいた。One of the methods of envelope control is to prepare a burst envelope and control it so that it becomes a similar envelope. A digital envelope generation circuit has been used as a conventional circuit for this purpose.
このデジタル包絡線発生回路はクロックによって逐次1
?OMのデータを読み出し、これをディジタル・アナロ
グ変換器でアナログ信号に変換した後に、フィルタリン
グを行い目的とする包絡線を発生させるものである。し
かし、一般に高速で動作する(ICは消費電力も多くか
つ高価であり、また、正負両極性の電源を必要とする場
合もあるほかに、ラソヂ回路、ディジタル・アナログ変
換器などの周辺回路が必要となるために広い実装スペー
スを要し、回路が大型になるなどの問題点がある。This digital envelope generation circuit sequentially generates 1 by the clock.
? After reading the OM data and converting it into an analog signal using a digital-to-analog converter, filtering is performed to generate a target envelope. However, ICs that generally operate at high speeds (ICs consume a lot of power, are expensive, and may require power supplies with both positive and negative polarities, as well as peripheral circuits such as Lasoji circuits and digital-to-analog converters). Therefore, there are problems such as a large mounting space is required and the circuit becomes large.
本発明は、前述の欠点を除去するもので、消費電力の節
減と、回路の小型化が計られた包絡線発生回路を提供す
ることを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide an envelope generation circuit which eliminates the above-mentioned drawbacks and which reduces power consumption and miniaturizes the circuit.
本発明は、なだらかな立ち上りおよび立ち下り特性を有
するバースト包絡線を発生させるもので、バースト制御
信号の断時に所定幅のパルスを発生させるパルス発生回
路と、このパルス発生回路の出力に接続された微分回路
と、第一の抵抗とコンデンサとの間に上記バースト制御
信号の方向に導illするダイオードが挿入されて構成
され、このコンテン1ノ°とこのダイオードの接続点か
ら出力する積分回路と、この積分回路の出力点にその一
端が接続され、」−記i戚分回路からの出力信号により
抵抗値が変化する可変抵抗素子と、この可変抵抗素子の
両端子間に接続された第二の抵抗と、その一端がこの可
変抵抗素子の他端と接続され、その他端が共通電位に接
続された第三の抵抗とを備えた抵抗可変回路と、を備え
たことを特徴とする。The present invention generates a burst envelope having gentle rising and falling characteristics, and includes a pulse generating circuit that generates a pulse of a predetermined width when a burst control signal is disconnected, and a pulse generating circuit connected to the output of this pulse generating circuit. a differentiating circuit, and an integrating circuit configured by inserting a diode that guides illumination in the direction of the burst control signal between the first resistor and the capacitor, and outputting an output from the connection point between the content 1° and the diode; A variable resistance element whose one end is connected to the output point of this integrating circuit and whose resistance value changes depending on the output signal from the integrator circuit, and a second variable resistance element connected between both terminals of this variable resistance element. The present invention is characterized by comprising a variable resistance circuit including a resistor and a third resistor whose one end is connected to the other end of the variable resistance element and whose other end is connected to a common potential.
以下、本発明の実施例回路を図面に基づいて説明する。 DESCRIPTION OF THE PREFERRED EMBODIMENTS A circuit according to an embodiment of the present invention will be described below with reference to the drawings.
第1図は、この実施例回路の構成を示すブロック構成図
であり、第2図は、この実施例回路を構成する主要ブロ
ックの構成を示す接続図であり、第3図(7) (1)
〜(IV)は第2図(7) (+) 〜(TV)各部
の信号波形図である。FIG. 1 is a block configuration diagram showing the configuration of this embodiment circuit, FIG. 2 is a connection diagram showing the configuration of the main blocks constituting this embodiment circuit, and FIG. 3 (7) (1 )
~(IV) is a signal waveform diagram of each part of FIG. 2(7) (+) ~(TV).
まず、この実施例回路の構成を第1図および第2図に基
づいて説明する。この実施例回路は、入力端子1と、積
分回路2と、抵抗可変回路3と、濾波回路4と、出力端
子5と、パルス発生回路6と、微分回路7と、積分回路
出力端子8とで構成される。ここで、積分回路2は、積
分lit抗9と、ダイオード10と、積分コンデンサ1
1とで構成され、抵抗可変回路3は、高抵抗12と、電
界効果トランジスタ13と、低抵抗14とで構成され、
また、微分回路7は、微分コンデンサ15と、微分抵抗
16とで構成される。First, the configuration of this embodiment circuit will be explained based on FIGS. 1 and 2. This embodiment circuit includes an input terminal 1, an integrating circuit 2, a variable resistance circuit 3, a filtering circuit 4, an output terminal 5, a pulse generating circuit 6, a differentiating circuit 7, and an integrating circuit output terminal 8. configured. Here, the integrating circuit 2 includes an integrating lit resistor 9, a diode 10, and an integrating capacitor 1.
1, the variable resistance circuit 3 is composed of a high resistance 12, a field effect transistor 13, and a low resistance 14,
Further, the differentiating circuit 7 includes a differentiating capacitor 15 and a differentiating resistor 16.
入力端子1は積分回路2の入力およびパルス発生回路6
の入力のそれぞれに接続され、積分回路2の出力は積分
回路出力端子8に接続され、一方、パルス発生回路6の
出力は微分回路7の入力に接続され、微分回路7の出力
は抵抗可変回路3の入力に接続され、抵抗可変回路3の
出力は積分回路出力端子8に接続され、積分回路出力端
子8は濾波回路4の入力に接続され、濾波回路4の出力
は出力端子5に接続される。ここで、積分回路2の入力
は積分抵抗9の一方の端に接続され、積分抵抗9の他方
の端はダイオード10のアノードに接続され、ダイオー
ド10のカソードは積分コンデンサ11の一方の端およ
び積分回路出力端子8に接続され、積分コンデンサ11
の他方の端は兵庫電位に接続され、また、微分回路7の
入力は微分コンデンサ15の一方の端に接続され、微分
コンデンサ15の他方の端は微分11u冗16の一方の
端およびtl(抗可変回路3の電界効果トランジスタ1
3のゲートに接続され、微分抵抗16の他方の端は共i
m電位に接続され、さらに、抵抗可変回路3の電界効果
lランジスタ12のソースは低抵抗14の一方の端およ
び高抵抗12の一方の端に接読され、低11℃抗14の
他方の端は共通電位に接続され、電界効果トランジスタ
13のドレインは高抵抗12の他方の端および積分回路
出力端子8に接続される。Input terminal 1 is the input of integration circuit 2 and pulse generation circuit 6
The output of the integrating circuit 2 is connected to the integrating circuit output terminal 8, while the output of the pulse generating circuit 6 is connected to the input of the differentiating circuit 7, and the output of the differentiating circuit 7 is connected to the variable resistance circuit. 3, the output of the variable resistance circuit 3 is connected to the integrating circuit output terminal 8, the integrating circuit output terminal 8 is connected to the input of the filtering circuit 4, and the output of the filtering circuit 4 is connected to the output terminal 5. Ru. Here, the input of the integrating circuit 2 is connected to one end of the integrating resistor 9, the other end of the integrating resistor 9 is connected to the anode of the diode 10, and the cathode of the diode 10 is connected to one end of the integrating capacitor 11 and the integrating resistor 9. It is connected to the circuit output terminal 8, and the integrating capacitor 11
The other end of the differential circuit 7 is connected to the Hyogo potential, and the input of the differentiating circuit 7 is connected to one end of the differentiating capacitor 15. Field effect transistor 1 of variable circuit 3
3, and the other end of the differential resistor 16 is connected to the gate of i
In addition, the source of the field effect l transistor 12 of the variable resistance circuit 3 is connected to one end of the low resistance 14 and one end of the high resistance 12, and the other end of the low 11°C resistor 14 is connected to the m potential. are connected to a common potential, and the drain of the field effect transistor 13 is connected to the other end of the high resistance 12 and the integrating circuit output terminal 8.
次に、この実施例装置の動作を第1図ないし第3図に基
づいて説明する。Next, the operation of this embodiment device will be explained based on FIGS. 1 to 3.
入力端子1からの矩形波のバースト制御信号は積分回路
2に入力される。積分回路2にはコンデンサ11の放電
を阻止する方向にダイオ−1゛10が接続されており、
積分回路2の出力には抵抗値rRJの抵抗9とオン抵抗
[rlのダイオード10および容量rcJのコンデン−
’Jllで決定されるc (Rlr)の時定数にしたが
って、なだらかに立ち」−る積分波形が得られる。一方
、バースト制御信号オフ時の波形はダイオード10が逆
接続され−ζいるので、積分回路2の出力側に接続され
ている抵抗可変回路3により37774月Oの放電時間
が決定される。A rectangular wave burst control signal from an input terminal 1 is input to an integrating circuit 2. A diode 1 and 10 are connected to the integrating circuit 2 in a direction that prevents the capacitor 11 from discharging.
The output of the integrating circuit 2 includes a resistor 9 with a resistance value rRJ, a diode 10 with an on-resistance [rl], and a capacitor with a capacitance rcJ.
An integral waveform that rises gently according to the time constant of c (Rlr) determined by Jll is obtained. On the other hand, in the waveform when the burst control signal is off, the diode 10 is reversely connected and therefore the variable resistance circuit 3 connected to the output side of the integrating circuit 2 determines the discharge time of 37774 months.
したがって、第1図に示すように抵抗可変回路3の制御
によりコンデンサ11に蓄積された電荷の放電時間が制
御され、包絡綿の傾きを所望の傾きに設定することがで
きる。さらに、この出力波形は浦波回路4で波形整形さ
れ、立ち上りおよび立ち下り共に変化の少ないバースト
包絡線出力を得ることができる。Therefore, as shown in FIG. 1, the discharge time of the charge accumulated in the capacitor 11 is controlled by controlling the variable resistance circuit 3, and the inclination of the wrapped cotton can be set to a desired inclination. Furthermore, this output waveform is waveform-shaped by the Urahami circuit 4, and a burst envelope output with little change in both rising and falling edges can be obtained.
ここで、積分回路2の出力にはデプリーションタイプの
電界効果トランジスタ13が図のように接続され、さら
に、一方のチャンネル、、は低抵抗14を介して接地さ
れている。また、チャンネル間には高抵抗12が接続さ
れ、電界効果トランジスタ13のゲートにはパルス発生
回路6の出力信号から微分波形を発生させる微分回路7
が接続されている。Here, a depletion type field effect transistor 13 is connected to the output of the integrating circuit 2 as shown in the figure, and one channel is grounded via a low resistance 14. Further, a high resistance 12 is connected between the channels, and a differentiation circuit 7 for generating a differential waveform from the output signal of the pulse generation circuit 6 is connected to the gate of the field effect transistor 13.
is connected.
したがって、第3図(1)に示す制御信号が入力端子1
に加えられると、積分回路出力8には(R+r)cで決
定される時定数で積分された立ち上りの出力波形(IV
)が得られる。一方、パルス発生回路6ではバースト制
御信号の下l!T点で一定幅のパルス(n)が作られ、
さらに微分回路7では(Ill)で見るような微分波形
が作られて、電界効果I−ランジスタ13のゲートに制
御信号として加えられる。Therefore, the control signal shown in FIG. 3(1) is applied to the input terminal 1.
, the integration circuit output 8 has a rising output waveform (IV
) is obtained. On the other hand, in the pulse generation circuit 6, the burst control signal is lower than l! A pulse (n) of constant width is created at point T,
Further, in the differentiating circuit 7, a differentiated waveform as shown in (Ill) is created and applied to the gate of the field effect I-transistor 13 as a control signal.
前述のように、バースト制御信号オフ時では、逆方向に
ダイオードが挿入されているためにコンデンサ11に蓄
積された電荷は電界効果I・ランジスタ13のチャンネ
ルを介して放電されるが、(Ill )に示すように、
この時間帯では電界効果1ランジスタ13のゲートば深
く逆バイアスされているのでカットオフの状態にある。As mentioned above, when the burst control signal is off, the charge accumulated in the capacitor 11 is discharged through the channel of the field effect I transistor 13 because the diode is inserted in the opposite direction, but (Ill) As shown in
During this time period, the gate of the field effect transistor 13 is deeply reverse biased and is therefore in a cutoff state.
この時区間t1では、高抵抗12と低抵抗14とを介し
てτ、で示される特定数で放電が行われる。In this time interval t1, discharge is performed via the high resistance 12 and the low resistance 14 by a specific number τ.
電界効果トランジスター3のデー1〜バイアスが徐々に
浅くなり、電位が「0」■になる時区間【2では、使用
する電界効果トランジスタI3がデプリーションタイプ
なので、チャンネル抵抗はある抵抗値をもって導通し、
この結果τ2の時定数にて放電効果が早められ傾斜がさ
らに急激になる。さらに、時区間LI+12の経過後に
図の(Ill )に示す正方向のパルスが電界効果トラ
ンジスタ13のゲートに入力されると、チャンネル抵抗
はさらに低抵抗になり、時区間t3内にτ3の時定数で
放電が終了し、(rV)に示す制御波形が得られる。こ
の出力波形は浦波回路4にて波形整形されバースト包絡
線出力になる。Day 1 of the field effect transistor 3 - The bias gradually becomes shallower and the potential becomes "0" ■ In the time period [2, the field effect transistor I3 used is a depletion type, so the channel resistance becomes conductive with a certain resistance value. death,
As a result, the discharge effect is accelerated with a time constant of τ2, and the slope becomes even steeper. Furthermore, when a positive pulse shown in (Ill) in the figure is input to the gate of the field effect transistor 13 after the time interval LI+12 has elapsed, the channel resistance becomes even lower, and within the time interval t3, the time constant of τ3 increases. The discharge ends at , and a control waveform shown in (rV) is obtained. This output waveform is shaped by the Urahami circuit 4 and becomes a burst envelope output.
本発明は、以上説明したように、節華な回路と低い消費
電力で包絡線が発生されるので、従来例装置に比べ、装
置を経済的にする効果がある。As described above, the present invention generates an envelope using a less expensive circuit and low power consumption, and therefore has the effect of making the apparatus more economical than the conventional apparatus.
第1図は本発明実施例装置の構成を示すブロック構成図
。
第2図は第1図の主要部の構成を示す接続図。
第3図は第2図の各部の波形を示す信号波形図。
1・・・入力端子、2・・・積分回路、3・・・抵抗可
変回路、4・・・濾波回路、5・・・出力端子、6・・
・パルス発生回路、7・・・微分回路、8・・・積分回
路出力、9・・・積分抵抗、10・・・ダイオード、1
1・・・積分コンデンサ、0
12・・・高抵抗、13・・・電界効果1ランジスタ、
14・・・低抵抗、15・・・微分コンデンサ、16・
・・ffk分抵抗抵抗許出願人 日本電気株式会社、−
代理人 弁理士 井 出 直 暑
1
第 1 図
児 2 図FIG. 1 is a block configuration diagram showing the configuration of an apparatus according to an embodiment of the present invention. FIG. 2 is a connection diagram showing the configuration of the main parts of FIG. 1. FIG. 3 is a signal waveform diagram showing waveforms at various parts in FIG. 2. 1... Input terminal, 2... Integrating circuit, 3... Resistance variable circuit, 4... Filtering circuit, 5... Output terminal, 6...
・Pulse generating circuit, 7... Differentiating circuit, 8... Integrating circuit output, 9... Integrating resistor, 10... Diode, 1
1... Integrating capacitor, 0 12... High resistance, 13... Field effect 1 transistor,
14...Low resistance, 15...Differential capacitor, 16.
...ffk resistance resistance permit Applicant: NEC Corporation, - Agent: Patent attorney Naoto Ide 1 Figure 1 Figure 2
Claims (1)
生させるパルス発生回路と、 このパルス発生回路の出力に接続された微分回路と、 第一の抵抗とコンデンサとの間に」−記ハースト接続信
号の方向に導通ずるダイオ−1゛が挿入されて構成され
、このコンデンサとこのダイオードの接続点から出力す
る積分回路と、 この積分回路の出力点にその一端が接続され、上記微分
回路からの出力信号に。1ミリ抵抗値が変化する可変抵
抗素子と、この可変抵抗素子の両端子間に接続された第
二の抵抗と、その一端がこの可変抵抗素子の他端と接続
され、その他端が共通電位に接続された第三の抵抗とを
備えた抵抗可変回路と を備えた包絡線発生回路。(1) Hurst connection between a pulse generation circuit that generates a pulse of a predetermined width when the burst control signal is interrupted, a differentiator circuit connected to the output of this pulse generation circuit, and the first resistor and capacitor. It is constructed by inserting a diode 1, which conducts in the direction of the signal, and an integrating circuit which outputs from the connection point of this capacitor and this diode, and one end of which is connected to the output point of this integrating circuit, and outputs from the differentiating circuit. to the output signal. A variable resistance element whose resistance value changes by 1 mm, a second resistor connected between both terminals of this variable resistance element, one end of which is connected to the other end of this variable resistance element, and the other end connected to a common potential. an envelope generating circuit comprising: a variable resistance circuit comprising a third resistor connected thereto;
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59062805A JPS60206352A (en) | 1984-03-30 | 1984-03-30 | Envelope generating circuit |
| US06/716,270 US4706262A (en) | 1984-03-30 | 1985-03-26 | FSK or FM burst signal generating apparatus |
| CA000477795A CA1246253A (en) | 1984-03-30 | 1985-03-28 | Fsk or fm burst signal generating apparatus |
| DE8585103848T DE3587081T2 (en) | 1984-03-30 | 1985-03-29 | FREQUENCY OR FREQUENCY REVERSE MODULATED BURST SIGNAL GENERATOR. |
| AU40521/85A AU578082B2 (en) | 1984-03-30 | 1985-03-29 | Tdma burst signal generation |
| EP85103848A EP0156398B1 (en) | 1984-03-30 | 1985-03-29 | Fsk or fm burst signal generating apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59062805A JPS60206352A (en) | 1984-03-30 | 1984-03-30 | Envelope generating circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60206352A true JPS60206352A (en) | 1985-10-17 |
| JPH0234545B2 JPH0234545B2 (en) | 1990-08-03 |
Family
ID=13210914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59062805A Granted JPS60206352A (en) | 1984-03-30 | 1984-03-30 | Envelope generating circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60206352A (en) |
-
1984
- 1984-03-30 JP JP59062805A patent/JPS60206352A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0234545B2 (en) | 1990-08-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |