JPS60218480A - chemical copper plating liquid - Google Patents
chemical copper plating liquidInfo
- Publication number
- JPS60218480A JPS60218480A JP7499484A JP7499484A JPS60218480A JP S60218480 A JPS60218480 A JP S60218480A JP 7499484 A JP7499484 A JP 7499484A JP 7499484 A JP7499484 A JP 7499484A JP S60218480 A JPS60218480 A JP S60218480A
- Authority
- JP
- Japan
- Prior art keywords
- plating solution
- compounds
- copper
- org
- chemical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/187—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating means therefor, e.g. baths, apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は機械的性質の優れた納めつき膜を析出させる化
学銅めっき液に係シ、特にプリント配線板製造の厚付け
めっきに適した化学鋼めっき液に関する。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a chemical copper plating solution that deposits a deposited film with excellent mechanical properties, and in particular to a chemical steel suitable for thick plating in the manufacture of printed wiring boards. Regarding plating solution.
従来よル、銅塩、銅塩の錯化剤、銅塩の還元剤pH調整
剤を基本成分とする化学銅めっき液が知られておシ、こ
の化学鋼めっき液を安定化するために有機化合物系の多
くの添加剤が提案されている。しかしながら、厚付けめ
っきにより、スルーホールめっきを行うプリント配線板
においては優れた物性のめつき膜を与える化学銅めっき
液が必要であり、有機化合物系の添加剤だけでは十分な
物性のめつき膜を得ることは峻しい場合が多く、特公昭
56−27594号に記載されているような2.2′−
ビピリジル、ポリアルキレンクリコールなどごくわずか
の種類の酢加剤を用いた場合のみ、めっき膜物性の向上
が期待できる。 ゛〔発明の目的〕
本発明の目的は従来技術の欠点をなくし、化学銅めつき
徹を安定化するための有機化合物を適用しながら物性の
優れためつき膜を与える化学鋼めっき液を提供すること
にある。Conventionally, chemical copper plating solutions have been known that have copper salts, complexing agents for copper salts, reducing agents for copper salts, and pH adjusters as basic components.In order to stabilize this chemical steel plating solution, organic Many compound-based additives have been proposed. However, due to thick plating, a chemical copper plating solution that provides a plating film with excellent physical properties is required for printed wiring boards that perform through-hole plating, and organic compound additives alone are insufficient to provide a plating film with sufficient physical properties. It is often difficult to obtain a 2.2'-
Improvements in the physical properties of the plating film can be expected only when using very few types of vinegar additives such as bipyridyl and polyalkylene glycol. [Object of the Invention] The object of the present invention is to eliminate the drawbacks of the prior art and provide a chemical steel plating solution that provides a plating film with excellent physical properties while applying an organic compound to stabilize the chemical copper plating. There is a particular thing.
本発明の特徴とするところは銅塩、銅塩の錯化剤、銅塩
の還元剤、pHs整剤を含む化学鋼めっき液において、
さらに添加剤として(a)アルカリ可溶性無機ケイ素化
合物を含み、且つ(b)めっき液の安定化に効果のある
有機化合物、すなわちニトリル化合物、オキシム類、ア
ミノ酸類、2.2’ −ジピリジル、及びその誘導体、
1.10−フェナントロリン、及びその誘導体、アルコ
ール類、有機イオウ化合物のうち、少なくとも一樵、を
含むところにある。これによシ、めっきrfの安定化が
図れ、且つ物性の優れためつき膜を得ることができる。The present invention is characterized in that a chemical steel plating solution containing a copper salt, a complexing agent for the copper salt, a reducing agent for the copper salt, and a pH adjuster,
Further, additives (a) containing an alkali-soluble inorganic silicon compound, and (b) organic compounds effective in stabilizing the plating solution, such as nitrile compounds, oximes, amino acids, 2,2'-dipyridyl, and derivative,
1. Contains at least one of 10-phenanthroline, its derivatives, alcohols, and organic sulfur compounds. This makes it possible to stabilize the plating RF and obtain a plated film with excellent physical properties.
アルカリ可溶性無機ケイ素化合物としてケイ酸ナトリウ
ムやメタケイ酸ナトリウムをめっき液に添加した例は金
属表面技術誌、第16巻11号j1965年)に記載さ
れておシ、従来よシ知られている。しかし、上記公知例
の液組成から得られるめつき膜は機械的性質が不十分で
ろシ、無機ケイ素化合物の添加によってめっき膜物性が
向上することは知られていなかった。しかも、めっき液
の安定性も不十分であシ、めっき槽に銅が析出しやすい
という問題もあった。、また、特開昭54−19430
号に記載されているように、2.2’ −ジピリジルと
ポリエチレングリコールを添加した化学銅めっき液に無
機ケイ素化合物をさらに添加した場合、めっき膜の機械
的特性のうち引張強度が向上することも知られている。An example of adding sodium silicate or sodium metasilicate to a plating solution as an alkali-soluble inorganic silicon compound is described in Metal Surface Technology, Vol. 16, No. 11, 1965), and is well known in the art. However, the mechanical properties of the plated film obtained from the liquid composition of the above known example are insufficient, and it has not been known that the physical properties of the plated film can be improved by adding an inorganic silicon compound. Moreover, the stability of the plating solution was also insufficient, and there was also the problem that copper was easily deposited in the plating bath. , also, JP-A-54-19430
As described in the issue, when an inorganic silicon compound is further added to a chemical copper plating solution containing 2,2'-dipyridyl and polyethylene glycol, the tensile strength among the mechanical properties of the plated film can be improved. Are known.
しかし、この場合はめつき膜の伸び率はほとんど向上し
ておらず、無機ケイ素化合物の添加によってめっき膜物
性としての伸び率と引張強度の両方とも向上することは
知られていなかった。However, in this case, the elongation rate of the plated film was hardly improved, and it was not known that both the elongation rate and tensile strength as physical properties of the plated film could be improved by adding an inorganic silicon compound.
本発明は添加剤として無機ケイ素化合物とめつき液の安
定化に効果のめる有機化合物とを併用することによって
目的が達成できる。The objects of the present invention can be achieved by using an inorganic silicon compound and an organic compound effective in stabilizing the plating solution in combination as additives.
本発明において、適用可能な無機ケイ素化合物としては
水ガラス、メタケイ酸ナトリウムなどのメタケイ酸塩、
ケイ酸ナトリウムなどのケイ酸塩、オルトケイ酸ナトリ
ウムなどのオルトケイ酸塩、そのほかポリケイ酸塩、二
酸化ケイ素、ケイ素含有ガラスなどがめげられる。めっ
き膜の機械的性質向上に効果のある象加蓋としてはケイ
素量に換算して10mg/を以上必要である。それ以下
では顕著な効果は期待できない。In the present invention, applicable inorganic silicon compounds include water glass, metasilicates such as sodium metasilicate,
Examples include silicates such as sodium silicate, orthosilicates such as sodium orthosilicate, polysilicates, silicon dioxide, and silicon-containing glasses. For an inlay to be effective in improving the mechanical properties of a plated film, it is necessary to have a silicon content of 10 mg/or more. If it is less than that, no significant effect can be expected.
本発明に適用する有機化合物としてはラクトニトリルな
どのニトリル化合物、ジメチルダリオキシムなどのオキ
シム類、グリシンやノルマルロイシンなどのアミノ酸類
、2.2’−ジピリジル、および4.4′−ジメチル2
.2′−ジピリジル、2.2′−ビキノリンなどのジピ
リジル訪導体、1.10−7エナントロリン、および2
.9−ジメチル−1,10−フェナントロリン、4,7
−ジフェニル−1,10−フェナントロリンなどのフェ
ナントロリン誘導体、メチルアルコールなどのアルコー
ル類、2−メチルベンゾチアゾール、2.2′−ジチオ
グリコール酸などの有機イオウ化合物などがあシ、化学
銅めっき液を前走にするものが使用できる。Organic compounds applicable to the present invention include nitrile compounds such as lactonitrile, oximes such as dimethyldalioxime, amino acids such as glycine and n-leucine, 2,2'-dipyridyl, and 4,4'-dimethyl 2
.. 2'-dipyridyl, 2. dipyridyl conductors such as 2'-biquinoline, 1.10-7 enanthroline, and 2
.. 9-dimethyl-1,10-phenanthroline, 4,7
- Phenanthroline derivatives such as diphenyl-1,10-phenanthroline, alcohols such as methyl alcohol, organic sulfur compounds such as 2-methylbenzothiazole, 2,2'-dithioglycolic acid, etc. You can use anything that makes you run.
さらに、本発明で使用する化学銅めっき液は銅塩、銅塩
の錯化剤、銅塩の還元剤、pH調整剤を基本成分とする
が、銅塩は硫#!銅、塩化第二鋼、酢酸鋼など公知のも
のが使用できる。、銅塩の錯化でメジ、エチレンジアミ
ン四酢酸、N−ヒドロキシエチルエチレンジアミン三酢
酸、1,2−ジアミノプロパン四酢酸、ジエチレントリ
アミン五酢酸シクロヘキサンジアミン四酢酸などが適用
できる。トリエタノールアミン、イミノ三酢酸、イミノ
三酢酸などのモノアミン、あるいはロツセル塩などを使
用した場合は十分な機械的性質のめつき膜を得ることが
できなかったり、またはめつき液の安定性が不十分で実
質的な厚付けめっきができなかったシする問題が生じる
。銅塩の還元剤は一般的に使用されるホルマリンが好適
で1、さらにpH調整剤には水酸化す) IJウムが通
用できる。Furthermore, the basic components of the chemical copper plating solution used in the present invention are a copper salt, a complexing agent for the copper salt, a reducing agent for the copper salt, and a pH adjuster. Known materials such as copper, second chloride steel, and acetic acid steel can be used. , methane, ethylenediaminetetraacetic acid, N-hydroxyethylethylenediaminetriacetic acid, 1,2-diaminopropanetetraacetic acid, diethylenetriaminepentaacetic acid, cyclohexanediaminetetraacetic acid, etc. can be used for complexing copper salts. If monoamines such as triethanolamine, iminotriacetic acid, iminotriacetic acid, or Rotussel salt are used, it may not be possible to obtain a plated film with sufficient mechanical properties, or the stability of the plating solution may be unstable. A problem arises in that sufficient and substantial thick plating cannot be achieved. Formalin, which is commonly used, is suitable as a reducing agent for the copper salt, and IJium (hydroxide) can be used as a pH adjuster.
また、本発明において、めっき温度は50t?以上が好
ましく、50C未満では十分な機械的性質のめつき膜を
得ることができない。In addition, in the present invention, the plating temperature is 50t? The above is preferable, and if it is less than 50C, a plated film with sufficient mechanical properties cannot be obtained.
次に本発明を実施例によシ具体的に説明する。 Next, the present invention will be specifically explained using examples.
実施例1〜15
表面を滑らかに研磨したステンレススチール板を脱脂し
、めっき反応の開始剤であるパラジウムを該表面に付着
させた。次に、第1表に示した化学銅めっき液組成で7
0Cの温度で化学鋼めっきを行い、約30μmの厚さの
めつき膜を得た。このめっき膜をステンレススチール板
よシ剥離して幅10Mに切断し、初期の引張間隔を50
mmとして東洋測器社製の引張試験機によシ破断までの
伸び率と引張強度とを測定した。その結果を第2表に示
した。Examples 1 to 15 A stainless steel plate whose surface was polished smoothly was degreased, and palladium, which is an initiator for a plating reaction, was attached to the surface. Next, with the chemical copper plating solution composition shown in Table 1,
Chemical steel plating was performed at a temperature of 0C to obtain a plated film with a thickness of about 30 μm. This plating film was peeled off from a stainless steel plate and cut to a width of 10M, with an initial tension interval of 50M.
The elongation rate and tensile strength were measured using a tensile tester manufactured by Toyo Sokki Co., Ltd. (mm). The results are shown in Table 2.
比較例1〜13
第1表の比較測標に記載した条件下で、実施例1〜15
と同様にめっきし、評価した。その結果を第2表に合わ
せて示した。Comparative Examples 1 to 13 Examples 1 to 15 were carried out under the conditions described in the comparative stations in Table 1.
It was plated and evaluated in the same manner as above. The results are also shown in Table 2.
実施例、ならびに比較例から明らかなように、本発明の
化学銅めっき液により、物性の優れためつき膜を得るこ
とができ、且つ液安定性も良好に保つことができる。As is clear from the Examples and Comparative Examples, the chemical copper plating solution of the present invention makes it possible to obtain a plating film with excellent physical properties and to maintain good solution stability.
同、本発明の化学銅めっき液において、必要に応じて第
3の添加剤を加えることもできる。例えば、シアン化ナ
トリウムなどの無機化合物を添加することによって、よ
シ一層の化学銅めっき液安窯化を図ることができる。Similarly, in the chemical copper plating solution of the present invention, a third additive can be added as necessary. For example, by adding an inorganic compound such as sodium cyanide, it is possible to make the chemical copper plating solution even more stable in a kiln.
Claims (1)
含む化学鋼めっき液において、添加剤として(a)アル
カリ可溶性無機ケイ素化合物を含み、且つ(b)めっき
液の安定化に効果のある有機化合物、すなわちニトリル
化合物、オキシム類、アミノ酸類、2,2′−ジピリジ
ル、及びその誘導体、1゜10−フェナントロリン、及
びその誘導体、アルコール類、有機イオウ化合物のうち
、少なくとも一種を含むことを特徴とする化学銅めっき
液。 2、特許請求の範囲第1項において、銅塩の錯化ること
を特徴とする化学銅めっき液。[Claims] 1. A chemical steel plating solution containing a copper salt, a complexing agent for the copper salt, a reducing agent for the copper salt, and a pH adjuster, which contains (a) an alkali-soluble inorganic silicon compound as an additive, and (b) Organic compounds effective in stabilizing the plating solution, such as nitrile compounds, oximes, amino acids, 2,2'-dipyridyl and its derivatives, 1°10-phenanthroline and its derivatives, alcohols, organic A chemical copper plating solution characterized by containing at least one type of sulfur compound. 2. A chemical copper plating solution according to claim 1, characterized in that it complexes a copper salt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7499484A JPS60218480A (en) | 1984-04-16 | 1984-04-16 | chemical copper plating liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7499484A JPS60218480A (en) | 1984-04-16 | 1984-04-16 | chemical copper plating liquid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60218480A true JPS60218480A (en) | 1985-11-01 |
Family
ID=13563333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7499484A Pending JPS60218480A (en) | 1984-04-16 | 1984-04-16 | chemical copper plating liquid |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60218480A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0378407A1 (en) * | 1989-01-13 | 1990-07-18 | Hitachi Chemical Co., Ltd. | Electroless copper plating solution |
| US5039338A (en) * | 1988-07-20 | 1991-08-13 | Nippondenso Co. Ltd. | Electroless copper plating solution and process for formation of copper film |
| US5965211A (en) * | 1989-12-29 | 1999-10-12 | Nippondenso Co., Ltd. | Electroless copper plating solution and process for formation of copper film |
| CN106544653A (en) * | 2017-01-20 | 2017-03-29 | 北方民族大学 | A kind of SiC powder surface chemical plating copper method |
-
1984
- 1984-04-16 JP JP7499484A patent/JPS60218480A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5039338A (en) * | 1988-07-20 | 1991-08-13 | Nippondenso Co. Ltd. | Electroless copper plating solution and process for formation of copper film |
| EP0378407A1 (en) * | 1989-01-13 | 1990-07-18 | Hitachi Chemical Co., Ltd. | Electroless copper plating solution |
| US5076840A (en) * | 1989-01-13 | 1991-12-31 | Hitachi Chemical Co. Ltd. | Electroless copper plating solution |
| US5965211A (en) * | 1989-12-29 | 1999-10-12 | Nippondenso Co., Ltd. | Electroless copper plating solution and process for formation of copper film |
| CN106544653A (en) * | 2017-01-20 | 2017-03-29 | 北方民族大学 | A kind of SiC powder surface chemical plating copper method |
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