JPS6022332A - Testing of semiconductor device - Google Patents

Abstract

PURPOSE:To carry out an accurate test under the same conditions as of actual use by testing breaking strength of a semiconductor device against static electricity generated by the vibration of the semiconductor device housed in a non- conductive case wherein static electricity is apt to generate. CONSTITUTION:In a non-conductive plastic case 10 wherein static electricity is apt to generate, a semiconductor device 1 is housed. The case 10 is vibrated to both directions as the arrow mark shows. Static electricity is generated in the case 10 due to the friction between the case 10 and the package 1a of the semiconductor device 1. Then, a trouble in the semiconductor device 1 is inspected. Quantity of generated static electricity can be regulated by speed and frequency of the vibration. The case 10 is tubular used for carrying a semiconductor and enables a test under the same conditions of actual use, so accurate examination results can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a testing method for testing electrostatic breakdown strength by applying static electricity to a semiconductor device.

[Prior art]

A conventional method for testing the electrostatic breakdown strength of semiconductor devices is shown in a circuit diagram in FIG. In the figure, (1) is the semiconductor device under test, (2) is the DC voltage source, (3) is the capacitor, and (4)
is a changeover switch.

The conventional test method was as follows.

First, the changeover switch (4) is turned on to the DC voltage source (2) to charge the capacitor (3). Next, switch (4
) into the semiconductor device (1) side, and discharge from the capacitor (3) to the semiconductor device (1). Here, the semiconductor device (1
) is inspected for failure. In a similar manner, the voltage of the DC voltage source (2) is gradually increased to increase the discharge voltage from the capacitor (3), and this process is repeated until the semiconductor device (1) fails.

In the conventional test method described above, the failure details are often different from the electrostatic breakdown failures that occur during actual handling of the semiconductor device fl), and there is a drawback that accurate electrostatic breakdown strength cannot be tested in accordance with the actual situation. .

[Summary of the invention]

In this invention, a semiconductor device is placed in a storage case made of a non-conductive material that easily generates static electricity, and is vibrated to generate static electricity, and its breaking strength against this static electricity is tested, and the test is conducted under conditions consistent with actual use. The purpose of this research is to provide a method for testing semiconductor devices.

[Embodiments of the invention]

Hereinafter, a method for testing a semiconductor device according to an embodiment of the present invention will be explained with reference to FIG. Place the semiconductor device (1) into a plastic storage case (IT) that easily generates static electricity. In the figure, this storage case Q0 is a semiconductor device (1
) is shown for transportation. By vibrating the storage case α1 from side to side, the internal semiconductor device (1) is reciprocated in the longitudinal direction. Then, static electricity is generated in the storage case (II) due to friction between the storage case (1) and the package (1a) of the semiconductor device (1).

The amount of static electricity generated can be adjusted by changing the vibration speed and frequency.

After the semiconductor device (1) is vibrated for a predetermined rotation, the presence or absence of a failure in the semiconductor device (1) is inspected by a measuring device (not shown).In the above embodiment, the storage case Ql has a tube shape and is used for transportation. However, the shape may be various as long as it is not made of a non-conductive material and generates electricity through friction.

〔Effect of the invention〕

As described above, according to the method of the present invention, a semiconductor device is placed in a storage case made of a non-conductive material, and the semiconductor device is inspected for damage due to static electricity generated by vibration. Tests consistent with use can be performed.

[Brief explanation of drawings]

FIG. 1 is a circuit diagram showing a conventional semiconductor device testing method, and FIG. 2 is a perspective view of a storage case portion showing a semiconductor device testing method according to an embodiment of the present invention. , la... package, 10
...Storage case In addition, the same symbols in the drawings indicate the same - or monk parts. Agent Masuo Oiwa

Claims (1)

[Claims] A semiconductor device in which a semiconductor device is placed in a storage case made of a non-conductive material that easily generates static electricity due to friction with other objects, and is moved and photographed a predetermined number of times to generate static electricity to inspect the semiconductor device for failures. test method.