JPS602242A - Production of ultrasonic probe - Google Patents
Production of ultrasonic probeInfo
- Publication number
- JPS602242A JPS602242A JP9653283A JP9653283A JPS602242A JP S602242 A JPS602242 A JP S602242A JP 9653283 A JP9653283 A JP 9653283A JP 9653283 A JP9653283 A JP 9653283A JP S602242 A JPS602242 A JP S602242A
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric plate
- ultrasonic probe
- matching layer
- low
- ceramic piezoelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000523 sample Substances 0.000 title claims description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000011521 glass Substances 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 6
- 239000010408 film Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000010287 polarization Effects 0.000 claims 1
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 3
- 229920000620 organic polymer Polymers 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000012285 ultrasound imaging Methods 0.000 description 1
Landscapes
- Ultra Sonic Daignosis Equipment (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 本発明は超音波探触子の製造方法に関１する。[Detailed description of the invention] The present invention relates to a method for manufacturing an ultrasonic probe.
従来より、超音波撮像装置に使用される超音波探触子け
、被検体に当接したときに被検体との音響インピーダン
ス整合がよくなるように圧電板の前面にインピーダンス
整合層を接合している。しかし、この場合の接着は通常
エポキシ、シリコーンなどの有機高分子接着剤により行
われるが、ガラスやセラミック類とそのような接着剤と
は必ずしも馴染がよいとはいいがだい。更に問題となる
点は、圧電板や整合層の音響インピーダンスに比べて有
機高分子接着剤の音響インピーダンス（ρＣ：ρは密度
、Ｃは接着剤中の音速）があまシにも違いすぎるという
点である。Conventionally, ultrasonic probes used in ultrasound imaging devices have an impedance matching layer bonded to the front surface of a piezoelectric plate to improve acoustic impedance matching with the subject when it comes into contact with the subject. . However, in this case, bonding is usually done with an organic polymer adhesive such as epoxy or silicone, but such adhesives are not necessarily compatible with glass or ceramics. A further problem is that the acoustic impedance of the organic polymer adhesive (ρC: where ρ is the density and C is the sound velocity in the adhesive) is too different from the acoustic impedance of the piezoelectric plate or matching layer. It is.
本発明の目的は、このような点に着目し、音響インピー
ダンス整合に悪影響を与えることなく、しかもより強力
な接着の行われる超音波探触子の製造方法を実現するこ
とＫある。An object of the present invention is to focus on such points and to realize a method for manufacturing an ultrasonic probe that provides stronger adhesion without adversely affecting acoustic impedance matching.
以下本発明を実施例を用いて詳しく説明する。The present invention will be explained in detail below using examples.
図は本発明の実施例図であシ、１はＰＺＴ、 ＰＣＭな
どでなるセラミック圧電板、２は石英ガラスでなる整合
層、３は圧電板１と整合層２を接合するだめの低融点ガ
ラス、４はバッキング材である。The figure shows an embodiment of the present invention, in which 1 is a ceramic piezoelectric plate made of PZT, PCM, etc., 2 is a matching layer made of quartz glass, and 3 is a low-melting glass for bonding the piezoelectric plate 1 and the matching layer 2. , 4 is a backing material.
次に１接着に係わる工程について説明する。高温焼成工
程を経て形成された圧電板（振動子素板）の表裏に電極
材料（銀ペーストなど）を塗付し、これを再度高温焼成
して電極１１．１２を焼き付ける。Next, the process related to 1 adhesion will be explained. Electrode materials (silver paste, etc.) are applied to the front and back surfaces of the piezoelectric plate (vibrator element plate) formed through a high-temperature firing process, and this is fired again at a high temperature to bake the electrodes 11 and 12.
その後、この圧電板の表面に、薄膜ないしは箔状に形成
された低融点ガラス３を挾んで整合層２を重ねる。これ
を空気中または真空中（気泡をさける目的からすれば真
空中の方が適切）で加熱し、低融点ガラス３を溶かして
整合層と圧電板とを接着する。次の工程では、これを冷
却したのち電極１１、１２に高電圧を印加して圧電板に
分極を付与する。その後の工程で、圧電板の裏面にバッ
キング材４を、更に必要とあれば整合層２の上に第２の
整合層を重ねて接合するなどする。最後に１この圧電板
を複数個の振動子に分割（ダイシングによる）すること
Ｋよりアレイ・エレメントの超音波探触子を得ることが
できる。Thereafter, a matching layer 2 is layered on the surface of this piezoelectric plate with a low melting point glass 3 formed in the form of a thin film or foil sandwiched therebetween. This is heated in air or vacuum (vacuum is more appropriate for the purpose of avoiding air bubbles) to melt the low melting point glass 3 and bond the matching layer and piezoelectric plate. In the next step, after cooling the piezoelectric plate, a high voltage is applied to the electrodes 11 and 12 to polarize the piezoelectric plate. In subsequent steps, a backing material 4 is bonded to the back surface of the piezoelectric plate, and if necessary, a second matching layer is stacked and bonded on top of the matching layer 2. Finally, by dividing this piezoelectric plate into a plurality of transducers (by dicing), an array element ultrasonic probe can be obtained.
なお、低融点ガラスの膜厚が整合層２の厚さの約１／１
０〜１７２０以下となる数十ｐｍ程度であればその膜厚
の精度は要求されない。Note that the film thickness of the low melting point glass is approximately 1/1 of the thickness of the matching layer 2.
The accuracy of the film thickness is not required as long as it is about several tens of pm, which is 0 to 1720 or less.
以上説明したように１本発明によれば、音響インピーダ
ンス整合に悪影響を与え条ことなく、しかも従来のよう
なエポキシやシリコーンなどの有機高分子接着剤による
接着よりも更に強力な接着状態を実現することができる
。As explained above, according to the present invention, it is possible to achieve an adhesive state that is stronger than conventional adhesives using organic polymer adhesives such as epoxy and silicone without adversely affecting acoustic impedance matching. be able to.
図は本発明の方法を実施するための超音波探触子の構成
説明図である。
１・・・セラミック圧電板、２・・・整合層、３・・・
低融点ガラス、４・・・バッキング材、１１．１２・・
・電極。The figure is an explanatory diagram of the configuration of an ultrasonic probe for carrying out the method of the present invention. 1... Ceramic piezoelectric plate, 2... Matching layer, 3...
Low melting point glass, 4... Backing material, 11.12...
·electrode.
Claims (3)
合層との間に薄膜の低融点ガラスを介在させ、これを加
熱して低融点ガラスを溶かし整合層とセラミック圧電板
とを接着し、その後セラミック圧電板に高電圧を印加し
て分極を付与し、しかる後にセラミック圧電板をダイシ
ングすることによりプレイ・エレメントを形成するよう
にしたことを特徴とする超音波探触子の製造方法。(1) A thin film of low-melting glass is interposed between a ceramic piezoelectric plate with electrodes formed on the front and back sides and a matching layer, and this is heated to melt the low-melting glass and bond the matching layer and ceramic piezoelectric plate, A method for manufacturing an ultrasonic probe, characterized in that a high voltage is then applied to the ceramic piezoelectric plate to impart polarization, and then the ceramic piezoelectric plate is diced to form play elements.
るよう托したことを特徴とする特許請求の範囲第１項記
載の超音波探触子の製造方法。(2) The method for manufacturing an ultrasonic probe according to claim 1, wherein the heating is performed in a vacuum to melt the low-melting glass.
さの約１／２０以下であることを特徴とする特許請求の
範囲第１項記載の超音波探触子の製造方法。(3) The method for manufacturing an ultrasonic probe according to claim 1, wherein the film thickness of the low melting point glass before melting is about 1/20 or less of the thickness of the matching layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9653283A JPS602242A (en) | 1983-05-31 | 1983-05-31 | Production of ultrasonic probe |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9653283A JPS602242A (en) | 1983-05-31 | 1983-05-31 | Production of ultrasonic probe |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS602242A true JPS602242A (en) | 1985-01-08 |
Family
ID=14167735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9653283A Pending JPS602242A (en) | 1983-05-31 | 1983-05-31 | Production of ultrasonic probe |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS602242A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5514044A (en) * | 1978-07-18 | 1980-01-31 | Tokyo Shibaura Electric Co | Preparation of ultrasoniccwave detecting contacting piece |
| JPS5811000A (en) * | 1981-07-13 | 1983-01-21 | Toshiba Corp | Piezoelectric element |
-
1983
- 1983-05-31 JP JP9653283A patent/JPS602242A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5514044A (en) * | 1978-07-18 | 1980-01-31 | Tokyo Shibaura Electric Co | Preparation of ultrasoniccwave detecting contacting piece |
| JPS5811000A (en) * | 1981-07-13 | 1983-01-21 | Toshiba Corp | Piezoelectric element |
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