JPS6022821B2 - semiconductor equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device, and is directed to a high frequency, high output transistor.

In order to obtain a high frequency, high output transistor with good high frequency characteristics and a large current capacity, the resistance of the electrode taken out from the semiconductor substrate must be made sufficiently small. As a means to reduce the resistance of the electrodes taken out from the semiconductor substrate, it is necessary to increase the film thickness of the metal fly electrode, or to arrange two or more electrode pads with the same potential as shown in Fig. Either increase the width Q of the electrode connection piece to be connected, or
Alternatively, a method has been adopted in which two or more electrode pads and leads of the same potential are interconnected with wires.

However, in either case, there are drawbacks as described below. [11] When increasing the film thickness of the metal (A) electrode, during photoetching to form the metal (A) electrode, the vapor-deposited metal film becomes obliquely oblong, increasing the error in photoetching. Processing yield is reduced, and therefore, it is difficult to obtain a high frequency, high output transistor with excellent high frequency characteristics and large current capacity.

{21 Referring to FIG. 1a, if the width Q of the electrode connection piece is increased, the parasitic MOS capacitance increases, which deteriorates the high frequency characteristics.

Further, if the width of the electrode connection piece is increased, the overall size of the semiconductor substrate becomes larger as shown in FIG. 1A, resulting in an increase in cost.

{3} As shown in Figure 1 a and b, when connecting two or more electrode pads and leads of the same electrode directly with multiple wires, the wires are long and complicated. Because of the assembly, tab shorts and contact with other electrode wires can occur, making them unreliable.

As described above, the conventional means have various drawbacks.

The present invention has been made to eliminate such drawbacks,
Therefore, the purpose of the present invention is to improve the electrode processing yield and easily obtain a high-frequency, high-output semiconductor device with excellent high-frequency characteristics and large current capacity; (1) to reduce parasitic MOS capacitance and improve high-frequency characteristics; At the same time, we aim to reduce the cost of high-frequency, high-power semiconductor devices by downsizing the semiconductor substrate, and reduce the contact with the '3-shio shorts and other wires to improve the production of high-frequency, high-power semiconductor devices. The purpose is to improve reliability.

The present invention will be explained in detail below.

FIG. 2 shows an embodiment of the high frequency, high output transistor of the present invention.

In the figure, a silicon semiconductor substrate 1 is fixed to a gold-plated metal tab 2 by Au--Si eutectic alloy bonding or the like.

This semiconductor substrate 1 has an A base electrode 3 with a thickness of 2 cm in the center, and a 2 cm A quamitter Kame electrode 4a around it.
4b is arranged. One base electrode pad 5 is provided in the center of the base electrode 3 side where a large current does not flow, and the distance between this base electrode pad 5 and the base lead 6 arranged on the outside of the semiconductor substrate 1 is 40〃◇ Au. They are directly connected by a wire 7 consisting of a wire.

Two emitter electrode pads 8a, 8b and 8 are provided on both sides of the emitter electrodes 4a and 4b, through which a large amount of current flows.
First, there are 40 electrode pads between facing (separated) electrode pads 8a and 8c and between 8b and 8a.
Buddha? The Au wires are connected by wires 9a and 9b, respectively, and then the electrode pads on the lead side are connected to the emitter lead 10 arranged on the outside of the semiconductor substrate 1 so that the distance between the electrode pads is as short as possible and the distance between them is connected. 8c and emitter lead 10 and electrode pad 8a and emitter lead 10
Wires 11a, 11b made of Au wire with 40th wire between them
connected with.

According to such a high-frequency, high-output transistor, a plurality of electrode pads of the emitter electrode through which a large amount of current flows are provided in isolation, and the electrode pads are connected with a wire.

．． As a result, there are almost no electrode connection pieces connecting the electrode pads, and the parasitic MOS capacitance is reduced by 4.degree., thereby improving high frequency characteristics.

Furthermore, since the width of the electrode connection piece can be reduced by 4 mm, the semiconductor substrate can be made smaller, and the cost of the high-frequency, high-output transistor can be reduced. Further, according to the present invention, when connecting the emitter electrode pad and the emitter lead, the electrode pad on the lead side is connected to the lead so that the wire connection is made as short as possible.

This way, the wires will be shorter and less complicated. Therefore, tab shorts and contact with other electrode wires are reduced, resulting in a highly reliable semiconductor device. According to the present invention, it is not necessary to make the thickness of the metal electrode particularly thick in order to reduce the thickness of the metal electrode, so that the photoetching error is small and the electrode processing yield is improved.

Therefore, a high frequency, high output transistor with excellent high frequency characteristics and large current capacity can be easily obtained. In the above embodiment, the base electrode has one electrode pad and the emitter electrode has four electrode pads, but if necessary, two or more base electrode pads can be provided and the electrode pads can be connected with wires. The emitter lead 10 is connected to the base lead 6 disposed on the outside of the semiconductor substrate 1, the emitter electrode has an appropriate number of electrode pads, the electrode pads are connected with wires, and the emitter lead 10 is connected to the adjacent corresponding electrode pad. It may also be connected by wire.

Furthermore, in the above embodiment, the wire connection on the emitter electrode side was made using separate wires for the wire connection between the electrode pads and the wire connection between the emitter lead and the adjacent emitter electrode pad, but in the present invention, the emitter electrode It is also possible to adopt a means of connecting the pads with a single wire without cutting the wire connection between the pads and the wire connection between the emitter lead and the adjacent emitter electrode pad.

The present invention is effective for power ICs (integrated circuit devices) and other semiconductor devices such as high-frequency, high-output transistors that flow large currents and require low resistance and low capacitance so as not to impair high-frequency characteristics. be.

[Brief explanation of the drawing]

FIG. 1 shows an embodiment of a conventional high frequency, high power transistor, in which a is a plan view, b is a front view thereof, and FIG. 2 is an embodiment of a high frequency, high power transistor of the present invention. A is a plan view, and b is a front view thereof. DESCRIPTION OF SYMBOLS 1... Semiconductor substrate, 2... Tab, 3... A base electrode, Aa, Ab... A quamitter electrode, 5...
Base electrode pad, 6...Base lead, 7...9a, 9b
, 11a, 11b, wire, 8a, 8b, 8a, 8d...
Emitter electric pad, 10...Emitter lead. Figure 1 Figure 2

Claims (1)

[Claims] 1. In a semiconductor device in which a semiconductor element part and a plurality of corresponding electrode parts are arranged on a semiconductor substrate, and each electrode part and the corresponding lead are connected by wires,
Among the electrodes, at least the electrode parts through which a large current flows and are at the same potential are arranged in isolation from each other on both sides with the semiconductor element in between, and the electrode parts having the same potential are connected by a first wire. , the electrode pad closer to the corresponding lead and the corresponding lead are connected by a second wire, and a wire is connected above the first wire between the electrode pad through which less current flows than the corresponding lead and the corresponding lead. A semiconductor device, characterized in that the semiconductor device is formed by crossing the first wire and connecting the second wire with a third wire.