JPS60235790A - 半絶縁性ＧａＡｓ単結晶の成長方法 - Google Patents

半絶縁性ＧａＡｓ単結晶の成長方法

Info

Publication number
JPS60235790A
JPS60235790A JP59089676A JP8967684A JPS60235790A JP S60235790 A JPS60235790 A JP S60235790A JP 59089676 A JP59089676 A JP 59089676A JP 8967684 A JP8967684 A JP 8967684A JP S60235790 A JPS60235790 A JP S60235790A
Authority
JP
Japan
Prior art keywords
gaas
single crystal
crystal
concentration
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59089676A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0569798B2 (2
Inventor
Tsutomu Tsuji
辻　力
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP59089676A priority Critical patent/JPS60235790A/ja
Publication of JPS60235790A publication Critical patent/JPS60235790A/ja
Publication of JPH0569798B2 publication Critical patent/JPH0569798B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP59089676A 1984-05-04 1984-05-04 半絶縁性ＧａＡｓ単結晶の成長方法 Granted JPS60235790A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59089676A JPS60235790A (ja) 1984-05-04 1984-05-04 半絶縁性ＧａＡｓ単結晶の成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59089676A JPS60235790A (ja) 1984-05-04 1984-05-04 半絶縁性ＧａＡｓ単結晶の成長方法

Publications (2)

Publication Number Publication Date
JPS60235790A true JPS60235790A (ja) 1985-11-22
JPH0569798B2 JPH0569798B2 (2) 1993-10-01

Family

ID=13977352

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59089676A Granted JPS60235790A (ja) 1984-05-04 1984-05-04 半絶縁性ＧａＡｓ単結晶の成長方法

Country Status (1)

Country Link
JP (1) JPS60235790A (2)

Also Published As

Publication number Publication date
JPH0569798B2 (2) 1993-10-01

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