JPS6024084A - 半導体レ−ザ素子 - Google Patents
半導体レ−ザ素子Info
- Publication number
- JPS6024084A JPS6024084A JP13210383A JP13210383A JPS6024084A JP S6024084 A JPS6024084 A JP S6024084A JP 13210383 A JP13210383 A JP 13210383A JP 13210383 A JP13210383 A JP 13210383A JP S6024084 A JPS6024084 A JP S6024084A
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- gaas
- region
- layer
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13210383A JPS6024084A (ja) | 1983-07-19 | 1983-07-19 | 半導体レ−ザ素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13210383A JPS6024084A (ja) | 1983-07-19 | 1983-07-19 | 半導体レ−ザ素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6024084A true JPS6024084A (ja) | 1985-02-06 |
| JPH0429235B2 JPH0429235B2 (mo) | 1992-05-18 |
Family
ID=15073521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13210383A Granted JPS6024084A (ja) | 1983-07-19 | 1983-07-19 | 半導体レ−ザ素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6024084A (mo) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5432359A (en) * | 1992-12-21 | 1995-07-11 | Kabushiki Kaisha Toshiba | Light emitting device with AlAs mixed crystal ratios |
| GB2365218A (en) * | 2000-02-21 | 2002-02-13 | Sony Corp | Stripe laser |
-
1983
- 1983-07-19 JP JP13210383A patent/JPS6024084A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5432359A (en) * | 1992-12-21 | 1995-07-11 | Kabushiki Kaisha Toshiba | Light emitting device with AlAs mixed crystal ratios |
| GB2365218A (en) * | 2000-02-21 | 2002-02-13 | Sony Corp | Stripe laser |
| US6628687B2 (en) | 2000-02-21 | 2003-09-30 | Sony Corporation | Semiconductor laser emitting apparatus |
| GB2365218B (en) * | 2000-02-21 | 2004-06-30 | Sony Corp | Semiconductor laser emitting apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0429235B2 (mo) | 1992-05-18 |
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