JPH0429235B2 - - Google Patents
Info
- Publication number
- JPH0429235B2 JPH0429235B2 JP13210383A JP13210383A JPH0429235B2 JP H0429235 B2 JPH0429235 B2 JP H0429235B2 JP 13210383 A JP13210383 A JP 13210383A JP 13210383 A JP13210383 A JP 13210383A JP H0429235 B2 JPH0429235 B2 JP H0429235B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- active layer
- type
- semiconductor laser
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 18
- 238000005253 cladding Methods 0.000 claims description 12
- 230000010355 oscillation Effects 0.000 claims description 11
- 230000000903 blocking effect Effects 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13210383A JPS6024084A (ja) | 1983-07-19 | 1983-07-19 | 半導体レ−ザ素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13210383A JPS6024084A (ja) | 1983-07-19 | 1983-07-19 | 半導体レ−ザ素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6024084A JPS6024084A (ja) | 1985-02-06 |
| JPH0429235B2 true JPH0429235B2 (mo) | 1992-05-18 |
Family
ID=15073521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13210383A Granted JPS6024084A (ja) | 1983-07-19 | 1983-07-19 | 半導体レ−ザ素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6024084A (mo) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5432359A (en) * | 1992-12-21 | 1995-07-11 | Kabushiki Kaisha Toshiba | Light emitting device with AlAs mixed crystal ratios |
| JP2001230493A (ja) * | 2000-02-21 | 2001-08-24 | Sony Corp | 半導体レーザ発光装置 |
-
1983
- 1983-07-19 JP JP13210383A patent/JPS6024084A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6024084A (ja) | 1985-02-06 |
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