JPS60243280A - Formation of transparent electrode - Google Patents
Formation of transparent electrodeInfo
- Publication number
- JPS60243280A JPS60243280A JP9625184A JP9625184A JPS60243280A JP S60243280 A JPS60243280 A JP S60243280A JP 9625184 A JP9625184 A JP 9625184A JP 9625184 A JP9625184 A JP 9625184A JP S60243280 A JPS60243280 A JP S60243280A
- Authority
- JP
- Japan
- Prior art keywords
- transparent electrode
- atmosphere
- oxygen
- electrode forming
- firing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000007788 liquid Substances 0.000 claims abstract description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000001301 oxygen Substances 0.000 claims abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 13
- 239000002904 solvent Substances 0.000 claims abstract description 12
- 239000011230 binding agent Substances 0.000 claims abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 3
- 238000010304 firing Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 14
- 150000002902 organometallic compounds Chemical class 0.000 claims description 12
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 abstract description 9
- 238000007598 dipping method Methods 0.000 abstract description 7
- 238000007650 screen-printing Methods 0.000 abstract description 7
- 229910052738 indium Inorganic materials 0.000 abstract description 4
- 239000000020 Nitrocellulose Substances 0.000 abstract description 3
- 229920001220 nitrocellulos Polymers 0.000 abstract description 3
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 abstract 3
- 238000001354 calcination Methods 0.000 abstract 2
- 230000002950 deficient Effects 0.000 abstract 2
- 235000019445 benzyl alcohol Nutrition 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 8
- 238000009835 boiling Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- QUKGYYKBILRGFE-UHFFFAOYSA-N benzyl acetate Chemical compound CC(=O)OCC1=CC=CC=C1 QUKGYYKBILRGFE-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 1
- 229940007550 benzyl acetate Drugs 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- AYOHIQLKSOJJQH-UHFFFAOYSA-N dibutyltin Chemical compound CCCC[Sn]CCCC AYOHIQLKSOJJQH-UHFFFAOYSA-N 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1275—Process of deposition of the inorganic material performed under inert atmosphere
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Thermal Sciences (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Surface Treatment Of Glass (AREA)
- Chemically Coating (AREA)
Abstract
Description
【発明の詳細な説明】
「技術分野」
本発明は、ガラス等の基板に有機金属化合物を含む透明
電極形成液を塗布して焼成する透明電極形成方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a transparent electrode forming method in which a transparent electrode forming liquid containing an organometallic compound is applied to a substrate such as glass and then baked.
「徒来技術およびその問題点」
ガラス、セラミックス等の基板上に形成した酸化インジ
ウム、酸化スズ、酸化カドミウムなどからなる酸化物被
膜は透明で良好な導電性を示すことが知られており、液
晶表示素子、半導体素子などの電極として使用されたり
、窓ガラスなどの結露防止用電極として使用されている
。"Archived technology and its problems" Oxide films made of indium oxide, tin oxide, cadmium oxide, etc. formed on substrates such as glass and ceramics are known to be transparent and have good conductivity, and are used for liquid crystal display. It is used as an electrode for display elements, semiconductor elements, etc., and as an electrode for preventing dew condensation on window glass.
このような透明電極の形成方法として、金属酸化物を直
接基板にコーティングして被膜を形成する真空蒸着法や
、有機金属化合物を含む透明電極形成液を基板に塗布し
これを焼成して被膜を形成するスクリーン印刷法、ディ
ッピング法などが知られている。真空蒸着法では、比較
的低抵抗の透明電極を得やすいが、特殊な設備を要し、
バッチ式なので量産に適さない欠点がある。一方、スク
リーン印刷法やディッピング法は、比較的大がかりな設
備を要せず、量産に適しているが、低抵抗の透明電極を
得にくい欠点がある。Methods for forming such transparent electrodes include vacuum evaporation, in which a metal oxide is directly coated on a substrate to form a film, and a transparent electrode forming liquid containing an organometallic compound is applied to the substrate and baked to form a film. Screen printing methods, dipping methods, and the like are known. The vacuum evaporation method makes it easy to obtain transparent electrodes with relatively low resistance, but requires special equipment and
Since it is a batch type, it has the drawback of not being suitable for mass production. On the other hand, screen printing methods and dipping methods do not require relatively large-scale equipment and are suitable for mass production, but have the disadvantage that it is difficult to obtain transparent electrodes with low resistance.
「発明の目的」
本発明の目的は、透明電極形成液を基板に塗布して焼成
する透明電極形成方法において、低抵抗の透明電極が得
られるようにすることにある「発明の構成」
本発明の透明電極形成方法は、有機金属化合物と有機バ
インダーと溶媒とを含む透明電極形成液を基板に塗布し
焼成する際に、焼成の前半を酸素が豊富な雰囲気下で行
ない、焼成の後半を酸素の乏しい雰囲気下で行なう方法
である。"Object of the Invention" An object of the present invention is to enable a transparent electrode with low resistance to be obtained in a transparent electrode forming method in which a transparent electrode forming liquid is applied to a substrate and fired. "Structure of the Invention" The present invention The method for forming transparent electrodes involves applying a transparent electrode forming liquid containing an organometallic compound, an organic binder, and a solvent to a substrate and firing it. This method is carried out in an atmosphere lacking in
このように、焼成の前半と後半とで酸素の含有量を変化
させることにより、有機金属の酸化をコントロールして
低抵抗の透明電極を形成することが可能となる。In this way, by changing the oxygen content between the first half and the second half of firing, it is possible to control the oxidation of the organic metal and form a low-resistance transparent electrode.
本発明において使用する透明電極形成液としては、イン
ジウムとスズとを含む非加水分解性の有機金属化合物と
、有機バインダーと、溶媒とからなる組成のものが好ま
しい。The transparent electrode forming liquid used in the present invention preferably has a composition consisting of a non-hydrolyzable organometallic compound containing indium and tin, an organic binder, and a solvent.
インジウムとスズとを含む非加水分解性の有機金属化合
物としては、例えばトリスアセチルアセトナートインジ
ウムIn−(acac)、1、ビスアセチルアセトナー
トジブチルスズ5nBu2 (acac)2などが挙げ
られる。この場合、スズ成分は有機金属化合物中、7.
5〜15重量%が適当である。そして、有機金属化合物
の含有量は全組成物中3〜8重量%が好ましい。Examples of non-hydrolyzable organometallic compounds containing indium and tin include trisacetylacetonatoindium In-(acac), 1, bisacetylacetonatodibutyltin 5nBu2 (acac)2, and the like. In this case, the tin component is contained in the organometallic compound in 7.
5 to 15% by weight is suitable. The content of the organometallic compound is preferably 3 to 8% by weight in the total composition.
有機バインダーとしては、例えばニトロセルロース、エ
チルセルロース、ベンジルセルロースなどのセルロース
化合物が使用できる。有機バインダーの含有量は、スク
リーン印刷用のペーストの場合、全組成物中5〜25重
量%、ディッピング用の液の場合、全組成物中1〜4重
量%が適当である。As the organic binder, cellulose compounds such as nitrocellulose, ethylcellulose, and benzylcellulose can be used. The appropriate content of the organic binder is 5 to 25% by weight in the total composition in the case of a screen printing paste, and 1 to 4% by weight in the total composition in the case of a dipping liquid.
溶媒としては、スクリーン印刷用のペーストの場合は例
えばベンジルアルコール、ジプロピレングリコール、ベ
ンジルアセテートなどの高沸点溶媒が主として用いられ
、ディッピング用の液の場合は例えばメチルエチルケト
ンなどの低沸点溶媒が主として用いられる。なお、沸点
を調整するため、スクリーン印刷用のペーストの場合に
微量の低沸点溶媒を添加し、あるいはディッピング用の
液の場合に微量の高沸点溶媒を添加してもよい。As the solvent, for screen printing pastes, high boiling point solvents such as benzyl alcohol, dipropylene glycol, and benzyl acetate are mainly used, and for dipping liquids, low boiling point solvents such as methyl ethyl ketone are mainly used. . In order to adjust the boiling point, a trace amount of a low boiling point solvent may be added in the case of a paste for screen printing, or a trace amount of a high boiling point solvent may be added in the case of a dipping liquid.
これらの溶媒は有機金属化合物、有機バインダーを除い
た残りの主たる成分をなすようにする。These solvents constitute the remaining main components except for the organometallic compound and organic binder.
そして、上記のような透明電極形成液をスクリーン印刷
やディッピングにより基板に塗布する。その際、有機金
属化合物として上記のような非加水分解性のものを使用
した場合には、湿度条件を特に限定する必要がなく、ま
た、透明電極形成液の保存寿命も向上する。Then, the transparent electrode forming liquid as described above is applied to the substrate by screen printing or dipping. In this case, when a non-hydrolyzable organometallic compound as described above is used, there is no need to particularly limit the humidity conditions, and the shelf life of the transparent electrode forming solution is also improved.
本発明の好ましい態様においては、透明電極形成液を塗
布した後、紫外線を照射する。紫外線としては、好まし
くは184.9n鵬から253.7n腸に波長のピーク
を持つものが使用され、これを例えば3.5分/4mw
/crn’の割合で基板に照射して、発生するオゾン(
03)により有機鎖分解と強制酸化を行ない、有機成分
を燃えやすくする。これによって、膜質が均一化する。In a preferred embodiment of the present invention, after applying the transparent electrode forming liquid, ultraviolet rays are irradiated. As the ultraviolet rays, those having a wavelength peak between 184.9n and 253.7n are preferably used, and this is, for example, 3.5 minutes/4 mw.
Ozone (
03) performs organic chain decomposition and forced oxidation, making the organic components more flammable. This makes the film quality uniform.
なお、この紫外線照射は本発明において必ずしも必要な
ものではなく、上記のように透明電極形成液を基板に塗
布した後、そのまま焼成を行なってもよい。Note that this ultraviolet irradiation is not necessarily necessary in the present invention, and baking may be performed directly after applying the transparent electrode forming liquid to the substrate as described above.
本発明において、焼成は種々の加熱手段を用いて行なう
ことができ、加熱温度は400〜800℃が適当である
。本発明のより好ましい態様においては、焼成は近赤外
線を基板に照射して行なう、ここで近赤外線とは可視光
線に近い赤外線のことで、波長0.8延から2.5路程
度のものをさす、近赤外線照射により基板は放射あるい
は輻射による直接加熱がなされ、ヒーティングレイト(
基板表面の温度が100℃から500℃に連するまでの
時間)が短縮される。これにより、溶媒や有機バインダ
ー成分の揮発と、有機金属化合物の熱分解とがほぼ同時
に進行し、膜質および膜厚がさらに均一化される。ヒー
ティングレイトは0.5〜3分の間に調整することが好
ましい、ヒーティングレイトが0.5分未満ではガラス
等の基板を用いた場合、基板が割れる虞れがあり、3分
を超えると透明電極の膜厚を均一にする効果が乏しくな
る。In the present invention, firing can be carried out using various heating means, and a suitable heating temperature is 400 to 800°C. In a more preferred embodiment of the present invention, the baking is performed by irradiating the substrate with near-infrared rays. Here, near-infrared rays are infrared rays close to visible light, and have a wavelength of about 0.8 to 2.5 rays. As expected, near-infrared irradiation heats the substrate directly by radiation or radiation, and the heating rate (
The time it takes for the temperature of the substrate surface to rise from 100°C to 500°C is shortened. As a result, the volatilization of the solvent and organic binder component and the thermal decomposition of the organometallic compound proceed almost simultaneously, and the film quality and thickness are further made uniform. It is preferable to adjust the heating rate between 0.5 and 3 minutes; if the heating rate is less than 0.5 minutes, there is a risk that the substrate will break if a substrate such as glass is used; if the heating rate exceeds 3 minutes, the substrate may break. If this happens, the effect of making the thickness of the transparent electrode uniform becomes poor.
そして、本発明においては、焼成工程の前半を酸素の豊
富な雰囲気下で行ない、焼成工程の後半を酸素の乏しい
雰囲気下で行なうようにする。酸素の豊富な雰囲気下の
焼成は、例えば空気中で行なうことができる。酸素の乏
しい雰囲気下の焼成は、例えばN2: o2=9:1の
気体中で行なうことができる。この場合、N2: 02
=8:l とするには空気中にN2が80%含まれてい
ることから、空気:窒素= 1:Iの割合とすればよい
。このように、焼成工程の前半と後半とで酸素の含有量
を変化させることにより、有機金属の酸化をコントロー
ルして低抵抗の透明電極を形成することが可能となる。In the present invention, the first half of the firing process is performed in an oxygen-rich atmosphere, and the second half of the firing process is performed in an oxygen-poor atmosphere. Firing in an oxygen-rich atmosphere can be carried out, for example, in air. Firing in an oxygen-poor atmosphere can be carried out, for example, in a gas of N2:O2=9:1. In this case, N2: 02
= 8:l, since air contains 80% N2, the ratio of air:nitrogen = 1:I may be used. In this way, by changing the oxygen content between the first half and the second half of the firing process, it is possible to control the oxidation of the organic metal and form a low-resistance transparent electrode.
なお、焼成の後半においては、温度を徐々に低下させる
ことが好ましい。Note that in the latter half of the firing, it is preferable to gradually lower the temperature.
「発明の実施例」
トリスアセチルアセトナートインジウム87.5重量%
、ビスアセチルアセトナートジブチルスズ12.5重量
%からなる有機金属化合物5.5重量%、ニトロセルロ
ース2.5重量%、ベンジルアルコール2.0重量%、
メチルエチルケトン90.0重量%からなる透明電極形
成液を作成した。"Example of the invention" Tris acetylacetonate indium 87.5% by weight
, 5.5% by weight of an organometallic compound consisting of 12.5% by weight of dibutyltin bisacetylacetonate, 2.5% by weight of nitrocellulose, 2.0% by weight of benzyl alcohol,
A transparent electrode forming liquid containing 90.0% by weight of methyl ethyl ketone was prepared.
この液にガラス基板を浸漬して引き上げ、液をガラス基
板に塗布した。A glass substrate was immersed in this liquid and pulled up, and the liquid was applied to the glass substrate.
次に、紫外線を3.5分/4mw/ctn”の割合で基
板に照射した。Next, the substrate was irradiated with ultraviolet rays at a rate of 3.5 minutes/4 mw/ctn''.
さらに、近赤外線を照射して焼成を行なった。Furthermore, firing was performed by irradiating near infrared rays.
その場合、ヒーティングレイトは2分とし、温度り昇後
、前半の20分間は500℃とし、後半の15分間は温
度を徐々に低下させた。このようすを第1図に示す。図
中、Aはヒーティングレイトの時間、Bは前半の焼成の
時間、Cは後半の焼成の時間である。そして、前半Bの
焼成は空気中で行ない、後半Cの焼成はN2: 02=
ll:1の気体中で行なちだ。In that case, the heating rate was 2 minutes, and after the temperature rose, the temperature was kept at 500°C for the first 20 minutes, and the temperature was gradually lowered for the latter 15 minutes. This situation is shown in Figure 1. In the figure, A is the heating rate time, B is the first half firing time, and C is the second half firing time. The first half B is fired in air, and the second half C is fired at N2:02=
It is carried out in a gas of 1:1.
こうして得られた透明電極は均一な膜質および膜厚を有
し、透明度が良好であった。なお、膜厚は300人、シ
ート抵抗はIKΩ/口であった。The transparent electrode thus obtained had uniform film quality and thickness, and good transparency. The film thickness was 300 mm, and the sheet resistance was IKΩ/mouth.
「発明の効果」
以上説明したように、本発明によれば、透明電極形成液
を基板に塗布し焼成する際に、焼成の前半を酸素が豊富
な雰囲気下で行ない、焼成の後半を酸素の乏しい雰囲気
下で行なうようにしたので、有機金属の酸化をコントロ
ールして低抵抗の透明電極を形成することができる。"Effects of the Invention" As explained above, according to the present invention, when a transparent electrode forming liquid is applied to a substrate and fired, the first half of the firing is performed in an oxygen-rich atmosphere, and the second half of the firing is performed in an oxygen-rich atmosphere. Since the process is carried out in a poor atmosphere, it is possible to control the oxidation of the organic metal and form a transparent electrode with low resistance.
第1図は本発明の実施例における焼成温度および時間を
示す図表である。
第1図
a# 聞FIG. 1 is a chart showing firing temperatures and times in Examples of the present invention. Figure 1 a#
Claims (1)
透明電極形成液を基板に塗布して焼成する透明電極形成
方法において、焼成の前半を酸素が豊富な雰囲気下で行
ない、焼成の後半を酸素の乏しい雰囲気下で行なうこと
を特徴とする透明電極形成方法。 (2、特許請求の範囲第1項において、焼成の前半を空
気中で行ない、焼成の後半を窒素:酸素=8:1の雰囲
気下で行なう透明電極形成方法。(1) In a transparent electrode forming method in which a transparent electrode forming liquid containing an organometallic compound, an organic binder, and a solvent is applied to a substrate and then fired, the first half of the firing is performed in an atmosphere rich in oxygen, and the second half of the firing is performed in an oxygen-rich atmosphere. A transparent electrode forming method characterized in that it is carried out in an atmosphere lacking in . (2. The transparent electrode forming method according to claim 1, wherein the first half of the firing is performed in air, and the second half of the firing is performed in an atmosphere of nitrogen:oxygen = 8:1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9625184A JPS60243280A (en) | 1984-05-14 | 1984-05-14 | Formation of transparent electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9625184A JPS60243280A (en) | 1984-05-14 | 1984-05-14 | Formation of transparent electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60243280A true JPS60243280A (en) | 1985-12-03 |
| JPH0220707B2 JPH0220707B2 (en) | 1990-05-10 |
Family
ID=14159990
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9625184A Granted JPS60243280A (en) | 1984-05-14 | 1984-05-14 | Formation of transparent electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60243280A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62297470A (en) * | 1986-06-18 | 1987-12-24 | Nippon Soda Co Ltd | Paste for forming metal oxide thin film |
| WO2002050340A1 (en) * | 2000-12-21 | 2002-06-27 | Advanced Photonics Technologies Ag | Electrode treatment |
| US6821575B2 (en) * | 2000-12-21 | 2004-11-23 | Advanced Photonics Technologies Ag | Electrode treatment |
| WO2005069402A1 (en) | 2004-01-14 | 2005-07-28 | Osram Opto Semiconductors Gmbh | Deposition of conducting polymers |
| US7147805B2 (en) | 2002-06-28 | 2006-12-12 | Nichia Corporation | Composition for forming a transparent conducting film, solution for forming a transparent conducting film and method of forming a transparent conducting film |
| CN100336136C (en) * | 2003-12-12 | 2007-09-05 | 日本曹达株式会社 | Transparent conductive film-forming liquid and method for producing transparent conductive film-adhering substrate containing the same |
| JP2011060749A (en) * | 2009-09-07 | 2011-03-24 | Samsung Electro-Mechanics Co Ltd | Method for forming organic electrode for transparent electrode |
-
1984
- 1984-05-14 JP JP9625184A patent/JPS60243280A/en active Granted
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62297470A (en) * | 1986-06-18 | 1987-12-24 | Nippon Soda Co Ltd | Paste for forming metal oxide thin film |
| WO2002050340A1 (en) * | 2000-12-21 | 2002-06-27 | Advanced Photonics Technologies Ag | Electrode treatment |
| US6821575B2 (en) * | 2000-12-21 | 2004-11-23 | Advanced Photonics Technologies Ag | Electrode treatment |
| US7147805B2 (en) | 2002-06-28 | 2006-12-12 | Nichia Corporation | Composition for forming a transparent conducting film, solution for forming a transparent conducting film and method of forming a transparent conducting film |
| CN1306522C (en) * | 2002-06-28 | 2007-03-21 | 日亚化学工业株式会社 | Composition for forming transparent conductive film, solution for forming transparent conductive film, and method for forming transparent conductive film |
| CN100336136C (en) * | 2003-12-12 | 2007-09-05 | 日本曹达株式会社 | Transparent conductive film-forming liquid and method for producing transparent conductive film-adhering substrate containing the same |
| WO2005069402A1 (en) | 2004-01-14 | 2005-07-28 | Osram Opto Semiconductors Gmbh | Deposition of conducting polymers |
| JP2011060749A (en) * | 2009-09-07 | 2011-03-24 | Samsung Electro-Mechanics Co Ltd | Method for forming organic electrode for transparent electrode |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0220707B2 (en) | 1990-05-10 |
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