JPS6024331A - Treatment of scrap of iii-v group compound semiconductor - Google Patents

Treatment of scrap of iii-v group compound semiconductor

Info

Publication number
JPS6024331A
JPS6024331A JP58130993A JP13099383A JPS6024331A JP S6024331 A JPS6024331 A JP S6024331A JP 58130993 A JP58130993 A JP 58130993A JP 13099383 A JP13099383 A JP 13099383A JP S6024331 A JPS6024331 A JP S6024331A
Authority
JP
Japan
Prior art keywords
scrap
inp
compound semiconductor
group compound
alkali
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58130993A
Other languages
Japanese (ja)
Other versions
JPS6324054B2 (en
Inventor
Hiroo Tsuchiya
弘雄 土屋
Iwao Kyono
京野 巖
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nihon Kogyo KK
Eneos Corp
Original Assignee
Nihon Kogyo KK
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Kogyo KK, Nippon Mining Co Ltd filed Critical Nihon Kogyo KK
Priority to JP58130993A priority Critical patent/JPS6024331A/en
Publication of JPS6024331A publication Critical patent/JPS6024331A/en
Publication of JPS6324054B2 publication Critical patent/JPS6324054B2/ja
Granted legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00Technologies related to metal processing
    • Y02P10/20Recycling

Landscapes

  • Hydrogen, Water And Hydrids (AREA)
  • Manufacture And Refinement Of Metals (AREA)

Abstract

PURPOSE:To recover easily metallic In in a high yield from scraps of InP as a III-V group compound semiconductor by treating the scraps with an alkali metallic hydroxide. CONSTITUTION:Scraps of InP as a III-V group compound semiconductor are ground and reacted with a molten alkali metallic hydroxide such as molten KOH or NaOH in a vessel. The scraps contain scarcely compound semiconductors other than InP. Only metallic In accumulated on the bottom of the vessel is separated. By this method, metallic In is easily recovered in a high yield.

Description

【発明の詳細な説明】 本発明は、m−v族化合物半導体の−Q + 工nPを
その主成分とするスクラップより、有価物であるInを
回収する方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for recovering In, which is a valuable material, from scrap whose main component is -Q + -nP of an m-v group compound semiconductor.

m−v族化合物半導体を用いた素子の製造工程には、(
1)IIl族(Al−Ga・工n)、V族(p−As−
sb)等の原料元素からの化合物合成、(2)合成した
化合物からの単結晶製造、(3)単結晶からの卵品切り
出し・研磨等の加工、(4)加工した単結晶表面での素
子作成等の段階があるが、これら工程での製品歩留りは
低く、一般に使用した原料の90係前後は工程上のロス
となる。とれらの工程で生じたスクラップには、Ga・
In等の高価な希元素が主に化合物半導体の形で多量に
含まれており、これらの有価物を回収することは、経済
性や資源の有効利用の点で重要な意味を持っている。
The manufacturing process of devices using m-v group compound semiconductors includes (
1) Group IIl (Al-Ga・N), Group V (p-As-
Synthesis of compounds from raw material elements such as sb), (2) Production of single crystals from the synthesized compounds, (3) Processing such as cutting and polishing eggs from single crystals, (4) Elements on the surface of processed single crystals. Although there are steps such as preparation, the product yield in these steps is low, and generally around 90% of the raw materials used are a loss in the process. The scrap produced in these processes contains Ga.
Large amounts of expensive rare elements such as In are contained mainly in the form of compound semiconductors, and recovering these valuables has important meaning in terms of economic efficiency and effective use of resources.

本発明は、特にInPの製造・加工の工程で生じる。工
nPを主成分としたスクラップから、有価物であるIn
を高収率で、かつ安全に回収することを目的とする。
The present invention occurs particularly in the process of manufacturing and processing InP. From scrap mainly composed of industrial nP, the valuable In
The aim is to safely recover the substances in a high yield.

工nPと同じm−v族化合物半導体であるGaAeから
のGa回収法については既にいくつかの方法が提案され
ている。これらの処理法のうち。
Several methods have already been proposed for recovering Ga from GaAe, which is an m-v group compound semiconductor like nP. Of these processing methods.

InPからのIn回収法に応用できるものとしては、(
1)熱分解法、(2)湿式処理法の2つの方法がある。
Examples of methods that can be applied to the In recovery method from InP include (
There are two methods: 1) thermal decomposition method and (2) wet processing method.

しかし、(1)の熱分解法でInPを処理[7た場合は
、成分のリンが有りな蒸気として揮発し、冷却した時は
有毒で自然発火性の黄リンと々るため処理の操作が極め
て危険であり、装置の作成・運転は困難である。一方、
(2)の湿式処理につ龜て発明者ら自身が検討した結果
、工nPと酸との反応性が小さいため、極めて濃厚な酸
や強酸化性の薬品を、工nPに対し大過剰量使用する必
要があることが判明した。このように、Inに対して多
量の酸類を含有する浸出液から工nf:回収することは
技術的に回部で1才だ経済性の点で問題がある。
However, when InP is treated by the thermal decomposition method in (1), the phosphorus component evaporates as a hot vapor, and when it is cooled, it releases toxic and pyrophoric yellow phosphorus, making the treatment difficult. It is extremely dangerous and difficult to create and operate the device. on the other hand,
As a result of the inventors' own study regarding the wet treatment in (2), it was found that extremely concentrated acids and strong oxidizing chemicals were used in a large excess amount relative to the wet treatment process, as the reactivity of the engineering nP and acid was small. It turned out that it was necessary to use. As described above, it is technically difficult to recover NF from a leachate containing a large amount of acids relative to In, but there is a problem in terms of economy.

発明者らは、上記の点を改善するため移々検討した結果
、工nPが溶融状態のアルカリ金属水酸化物の作用によ
り分解し、金屈工nを遊離する反応を見出した。本発明
は、溶融アルカリを利用した処理法により、■nPスク
ラップから。
As a result of repeated studies to improve the above-mentioned points, the inventors discovered a reaction in which phosphor nP is decomposed by the action of a molten alkali metal hydroxide, thereby liberating kinko-n. The present invention uses nP scrap using a processing method using molten alkali.

安全に、経済的に、高収率で、工nを全屈状態で回収す
ることを特徴とするものである。
This method is characterized by safely, economically, and in a high yield, recovering the methane in a fully flexed state.

次に、処理の方法及び条件を説明する。Next, the processing method and conditions will be explained.

■nPの分解に用いる溶融アルカリとしては。■As a molten alkali used for decomposing nP.

NaOH,KOH等のアルカリ金属水酸化物及びこわら
に融点の低下2反応の促Mイや調節などのために他の無
機塩類を添加したものが利用できるが。
Alkali metal hydroxides such as NaOH and KOH and other inorganic salts can be used to lower the melting point and to promote or control the reaction.

安価であること・入手が容易であること々どからN、a
 O11が適当である。実験の結果、溶融Na OHに
よる工nPの分′81は1次の形の反応であることが判
明した。
N,a due to being cheap and easy to obtain
O11 is suitable. As a result of experiments, it was found that the reaction of nP by molten NaOH was of the first order type.

2工nP + 10 NaOH−> 2 In+ 21
1a3PO4+ 2 Na2O+ 5 I(2−・−(
1)以下に述べる諸条件(InP粒径・添加方法・温度
等)を守る限りでは、副反応はほとんどなく、黄リン・
リン化水素等の有毒物質は全く生じなかった。反応の進
向とともに生じるNa3Po。
2 nP + 10 NaOH-> 2 In+ 21
1a3PO4+ 2 Na2O+ 5 I(2-・-(
1) As long as the conditions described below (InP particle size, addition method, temperature, etc.) are observed, there will be almost no side reactions, and yellow phosphorus and
No toxic substances such as hydrogen phosphide were produced. Na3Po is generated as the reaction progresses.

のため融体の粘り性が大きくなり、混合・借拌が困1=
Vとなり反応に支障を生じるので、アルカリを理論必要
量に対し過剰に用いる必要がある。
Therefore, the viscosity of the melt increases, making mixing and stirring difficult.
Since V is generated and the reaction is hindered, it is necessary to use an alkali in excess of the theoretically required amount.

例えばNaOHの場合は理論是の1.5〜4倍当量を使
用するのが好ましい。
For example, in the case of NaOH, it is preferable to use 1.5 to 4 times the theoretical equivalent.

溶融アルカリによる処理の対象と々るスクラップは工n
P ”f主成分とするものであれば、その形態は塊状で
も粉末でもかまわ外い。通常の工nPスクラップに混入
する不純物には、グラフ□アイト・セラコラ・石英・ガ
ラスなどの無機物と、ワックス・切削油などの有機物が
あるが。
The scrap that is subject to treatment with molten alkali is
As long as the main component is P"f, its form can be in the form of lumps or powder. Impurities that are mixed into ordinary engineering nP scrap include inorganic substances such as graphite, ceracola, quartz, and glass, and wax.・There are organic substances such as cutting oil.

これらは溶融アルカリ処理により分解してアルカリスカ
ムに溶解するか、又は未反応のまま金属Inに不溶の状
態で残るため2回収In と容易に分離できるが、’I
nP以外の異物が多い場合は、前処理により異物を除去
しておくことが好ましい。
These are either decomposed by molten alkali treatment and dissolved into alkali scum, or remain unreacted and insoluble in the metal In, so they can be easily separated from the recovered In.
When there are many foreign substances other than nP, it is preferable to remove the foreign substances by pretreatment.

処理にあたっては2反応を円滑にするため。In order to facilitate two reactions during processing.

工nPスクラップを粉砕する。粒は、16メツシユ(1
間)以下に橙っていれば、特に問題なく処理できる。
Crush engineering nP scrap. The grains are 16 mesh (1
) If it is orange below, it can be processed without any problem.

処理温度を高くすると1nP分解反応は速くなるが、金
属Inのアルカリへの溶解反応も速くなるためInの回
収率が低下する。反応温度はNaOHの融点以上好まし
くは380℃付近(670〜400℃)が適当である。
When the treatment temperature is raised, the 1nP decomposition reaction becomes faster, but the dissolution reaction of metal In into alkali also becomes faster, so the recovery rate of In decreases. The reaction temperature is suitably higher than the melting point of NaOH, preferably around 380°C (670-400°C).

■nP粉末とアルカリを反応させる時、最初から両者を
全量混合してから加熱溶融すると9反応熱のため急激に
温度が上がって極めて激しい反応が起こる。このため処
理にあたっては、あらかじめ溶融したアルカリに分解速
度に応じて工nP粉末を添加する方法が好捷しい。In
P添加速度はInP粒径・処理温度・反応容器の大きさ
と熱放散速度などにより調節する必要がある。
(2) When reacting nP powder with an alkali, if both are mixed in their entire amounts from the beginning and then heated and melted, the temperature will rise rapidly due to the heat of reaction and an extremely violent reaction will occur. Therefore, in the treatment, it is preferable to add the nP powder to the pre-molten alkali according to the decomposition rate. In
The P addition rate needs to be adjusted depending on the InP particle size, processing temperature, reaction vessel size, heat dissipation rate, etc.

本発明における工nPスクラップ溶融アルカリ処理用の
装置の例を図1に示しだ。図の1は反応容器、2は溶体
恍拌用のインペラーで、これらは溶融アルカリへの副食
性を考慮して、鉄やステンレス製のものを用いる。アル
カリ3は。
FIG. 1 shows an example of an apparatus for treating nP scrap with molten alkali according to the present invention. In the figure, 1 is a reaction vessel, and 2 is an impeller for agitating the solution. These are made of iron or stainless steel, taking into account the side effects of molten alkali. Alkaline 3.

あらかじめ容器1の中に入れておき、電気炉で380℃
に加熱・溶融する。溶融アルカリを撹拌しながら、4の
添加用じょうごケ用いて、工nPの粉末7を温度コント
ロールしながら添加する。
Place it in container 1 in advance and heat it to 380℃ in an electric furnace.
Heating and melting. While stirring the molten alkali, using the addition funnel (No. 4), add the powder 7 of KonP while controlling the temperature.

処理装置は、アルカリ飛沫が飛び散るのを防ぐため、フ
タ5で覆い、H2ガスを除くため全体゛を排気する。6
は排気口である。
The processing apparatus is covered with a lid 5 to prevent alkali droplets from scattering, and the entire apparatus is evacuated to remove H2 gas. 6
is an exhaust port.

全体の処理フローを図2示した。処理するス△ クラップは、粉砕後ふるい分けして1−以下の径にそろ
えて、上記の装置により溶融アルカリ処理を行う。溶融
アルカリ処理後、容器の底にたまった金属Inは、熱い
うちに容器を傾けて流し出すか、又は十分冷却してから
水浸出してアルカリスカムやIn以外の異物を洗い流し
た後に金属Iriを加熱溶融して取り出す。全屈状態の
Inの回収率は、原料スクラップ中のInに対し最高9
8〜99係に達する。純粋なInP粉末を分解した場合
1回収Inはごく少量のNaと容器から汚染したF’e
を含む含むのみで、はぼ99.9%の純度となる。
The overall processing flow is shown in Figure 2. The scrap to be treated is pulverized and then sieved to have a diameter of 1 or less, and then subjected to molten alkali treatment using the above-mentioned apparatus. After the molten alkali treatment, metal In accumulated at the bottom of the container can be poured out by tilting the container while it is still hot, or it can be sufficiently cooled and then leached with water to wash away alkali scum and foreign substances other than In. Heat to melt and take out. The recovery rate of In in the fully bent state is up to 9% compared to the In in the raw material scrap.
Reach sections 8-99. When pure InP powder is decomposed, one recovered In contains a very small amount of Na and F'e contaminated from the container.
It is approximately 99.9% pure.

アルカリスカムには、原料中のInのうちの2%未満が
溶解している。このIn分は、アルカリスカム水浸出液
をpH6〜8に中和すれば水酸化物となって沈殿し、容
易に回収される。未反応のInP微粉末がスカムに混入
した場合も、中和により水酸化Inのゲル状沈殿に巻き
込まれて容易に液から分離される。
Less than 2% of the In in the raw material is dissolved in the alkali scum. When the alkali scum water leachate is neutralized to pH 6 to 8, this In content becomes a hydroxide and precipitates, and is easily recovered. Even if unreacted InP fine powder is mixed into the scum, it is caught up in the gel-like precipitate of In hydroxide by neutralization and easily separated from the liquid.

回収された金属工nは9通常の工n製造工程9例えばI
n電解精製工程々どに戻し、容易に工業用用途として問
題ない純度(99,991以上)に精測・再生できる。
The recovered metal work is 9 normal metal work n manufacturing process 9 e.g. I
By returning it to the electrolytic refining process, it can be easily measured and regenerated to a purity (99,991 or higher) that is acceptable for industrial use.

又スカムから回収したInを含有した沈殿は、希鉱酸に
よりInを溶解・浸出して。
In addition, the In-containing precipitate recovered from the scum is dissolved and leached with dilute mineral acid.

In湿式製造工程の原料として利用できる。It can be used as a raw material for In wet manufacturing process.

以上のように4本発明により工nPを主成分とする化合
物半導体スクラップから高収率で安全に工n f ’+
大半を金属の形で回収することができる。
As described above, according to the present invention, compound semiconductor scrap containing nP as a main component can be safely manufactured with high yield.
Most can be recovered in metal form.

最後に、実施例により本発明を説明する。Finally, the present invention will be explained by examples.

実施例1 ステンレス’J 100 meビーカー(5011JX
70h)に3OfのNa OHをとり、電気炉に入れて
加熱溶融した。溶体の温度を380℃とし、攪拌し々か
ら16〜32メツシユ(1〜0.5 wn )に粉砕、
ふるい分けした工nP粉末10.Of’t50分かけて
加え、さらに添加後20分加熱攪拌f:続けた後、ビー
カーごと取り出し放冷した。アルカリスカムを水で溶か
して除き、ビーカーの底にたまった金属Inを取り出し
た。未反応のInPはほとんど認められなかった。回収
した金屈工nの量は17〜789で反応したfnPに対
する回収率は99係以上であった。回収金属Inの発光
定性分析結果は表1のとおりであった。
Example 1 Stainless steel 'J 100 me beaker (5011JX
At 70h), 3Of NaOH was taken, placed in an electric furnace, and heated and melted. The temperature of the solution was set to 380°C, and the mixture was ground to 16 to 32 meshes (1 to 0.5 wn) with constant stirring.
Sieved engineering nP powder10. The mixture was added over a period of 50 minutes, and heated and stirred for another 20 minutes after the addition, and then the beaker was taken out and allowed to cool. The alkali scum was dissolved and removed with water, and the metal In accumulated at the bottom of the beaker was taken out. Almost no unreacted InP was observed. The amount of Kinkuko n recovered was 17 to 789, and the recovery rate with respect to the reacted fnP was 99 or higher. The results of the luminescence qualitative analysis of the recovered metal In were as shown in Table 1.

スカム中に溶解したInは、原料中の全Inのうち2%
未満であり、これら工nはスカムの浸出液をpH6〜8
に中和すると、全て沈殿し、完全に回収された。
The In dissolved in the scum is 2% of the total In in the raw material.
These techniques reduce the scum exudate to a pH of 6 to 8.
When neutralized, all precipitated and was completely recovered.

実施例2 グラファイト・セラコラ・ワックス々どの不純物を含ん
だ工nP単結晶切出工程のスクラップ(100メツシュ
以下、工nP含有率91係)100tを用意した。50
0 meステンレスビーカー(80t15X130h)
に、NaOH300fをとり、電気炉で加熱・溶融し、
380℃の温度で攪拌しながら、上記スクラップ粉末を
60分かけて加え、さらに添加後20分反応させた。放
冷後、アルカリスカムや未反応の粉を水洗して除き、金
属In71.1fを回収した(回収率99係)。
Example 2 100 tons of scrap from the nP single crystal cutting process (less than 100 mesh, nP content 91%) containing impurities such as graphite, ceracola, and wax were prepared. 50
0 me stainless steel beaker (80t15X130h)
Next, take 300f of NaOH, heat and melt it in an electric furnace,
While stirring at a temperature of 380° C., the above scrap powder was added over 60 minutes, and the reaction was further allowed to occur for 20 minutes after the addition. After cooling, alkali scum and unreacted powder were removed by washing with water, and metal In71.1f was recovered (recovery rate: 99).

回収金属Inの発光定性分析結果は1表1のとおりであ
った。
The results of the luminescence qualitative analysis of the recovered metal In were as shown in Table 1.

表 1 0: 認められない 1: 極めて弱く認められる2:
 弱く認められる 3: 明確に認められる4: 強く
認められる 5: 相当強く認められる
Table 1 0: Not recognized 1: Very weakly recognized 2:
Weakly recognized 3: Clearly recognized 4: Strongly recognized 5: Very strongly recognized

【図面の簡単な説明】[Brief explanation of drawings]

図1は溶融アルカリ処理用の装置の一例を。 図2は全体の処理フローを示す。 特許出願人 日本鉱模株式会社 代理人 弁理士(7569)並川啓志 昭和58年9月76日 特許庁長官 若杉1夫 殿 1、事件の表示 8 昭和 年特許願第 130’993゜ 万 3、補正をする者 事件との関係 特許出願人 住 所 東京都港区虎ノ門二丁目10番1号名 称 日
本鉱業株式会社 ゛ 代表者 笠原幸雄 4、代 理 人 〒105 電話582−2111 住 所 東京都港区虎ノ門二丁目10番1号7、 ?f
g正の内容 (1) 明細@第7頁9行目の「Feを含む合むのみで
」を「Feを含むのみで」と補正する。 以 上
Figure 1 shows an example of equipment for molten alkali treatment. FIG. 2 shows the overall processing flow. Patent applicant Nippon Komou Co., Ltd. Agent Patent attorney (7569) Keishi Namikawa September 76, 1980 Commissioner of the Patent Office Kazuo Wakasugi Tono 1 Case description 8 Showa year patent application No. 130'993゜3, Amended Patent applicant address: 2-10-1 Toranomon, Minato-ku, Tokyo Name: Japan Mining Co., Ltd. Representative: Yukio Kasahara 4, agent: 105 Phone: 582-2111 Address: Tokyo Minato Toranomon 2-10-1-7, ? f
g Correct contents (1) In the 9th line of page 7 of the specification, amend "Only containing Fe" to "Only containing Fe."that's all

Claims (1)

【特許請求の範囲】[Claims] InPを主成分とし、InP以外の化合物半導体をほと
んど含まないm−v族化合物半導体スクラップから、有
価物として工nfe回収するに当り、該スクラップを溶
融状態のアルカリ金属水酸化物により処理することを特
徴とするm−v族化合物半導体スクラップの処理方法。
When recovering FE as a valuable resource from m-v group compound semiconductor scrap, which is mainly composed of InP and contains almost no compound semiconductors other than InP, it is recommended to treat the scrap with molten alkali metal hydroxide. A method for processing m-v group compound semiconductor scrap characterized by:
JP58130993A 1983-07-20 1983-07-20 Treatment of scrap of iii-v group compound semiconductor Granted JPS6024331A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58130993A JPS6024331A (en) 1983-07-20 1983-07-20 Treatment of scrap of iii-v group compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58130993A JPS6024331A (en) 1983-07-20 1983-07-20 Treatment of scrap of iii-v group compound semiconductor

Publications (2)

Publication Number Publication Date
JPS6024331A true JPS6024331A (en) 1985-02-07
JPS6324054B2 JPS6324054B2 (en) 1988-05-19

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP58130993A Granted JPS6024331A (en) 1983-07-20 1983-07-20 Treatment of scrap of iii-v group compound semiconductor

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Country Link
JP (1) JPS6024331A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116177505A (en) * 2023-03-03 2023-05-30 安徽工业大学 A method for efficiently recovering indium and phosphorus in indium phosphide waste in a molten salt system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116177505A (en) * 2023-03-03 2023-05-30 安徽工业大学 A method for efficiently recovering indium and phosphorus in indium phosphide waste in a molten salt system

Also Published As

Publication number Publication date
JPS6324054B2 (en) 1988-05-19

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