JPS6024701A - Microwave hybrid integrated circuit - Google Patents

Abstract

PURPOSE:To simplify manufacturing process and to improve reliability by providing a capacitor structure on a substrate by ceramic multilayer substrate technique. CONSTITUTION:An insulating body 14 consists of ceramic having low dielectric loss and an upper metal 15 forms a capacitor electrode. A line 16 connects the upper metal 15 and an end of a bias resistance 8. A thick film capacitor is formed of three layers, i.e. a lower metal of a source grounding electrode 5 that works as the lower metal of the capacitor, the insulating body 14 and the upper metal 15, and works as one power supply source grounding microwave amplifier. Accordingly, a chip capacitor becomes unnecessary and manufacturing process can be simplified.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a microwave hybrid integrated circuit using a ceramic substrate, and more particularly to a microwave hybrid integrated circuit in which a three-terminal microwave semiconductor element is operated by a thick film capacitor power source.

FIG. 1(a), FIG. 1(b) and FIG. 1(e) are plan views showing a conventional microwave hybrid integrated circuit;
' sectional view and its B-i sectional view. In the figure, 0) is a dielectric substrate made of ceramic or the like that has low dielectric loss in the microwave band, Q) is a microwave transmission line, (3) is a low-pass filter type drain electrode bias line, and (4) (6) is a low-pass filter type gate electrode bias line, (6) is a source grounded electrode grounded by a metallized through hole, and (6) is a three-terminal microwave semiconductor connected to each transmission line by a wire such as a gold wire. element, σ) is a microwave chip capacitor with low electric loss and high dielectric constant in the microwave band, (8) is a bias resistor such as a thick film resistor or chip resistor with a resistance value Rb, and (9) is a metalized through-hole. A resistive end grounding electrode (10) is connected to the three-terminal microwave semiconductor element (6) to the microwave transmission line C2) and the microwave chip capacitor (7), which is connected to a wire such as a gold edge. , (11) is a source potential electrode that grounds the source electrode via a resistor, (12) is a grounding electrode, and (13) is a metallized through hole.

In addition, FIG. 2 is based on the electrical equivalent circuit of FIG. 1←) to @1 (e).

Next, the operation of the microwave hybrid integrated circuit having the above configuration will be explained. First, the three-terminal microwave semiconductor element (6) is
When a DC bias is applied to it, it operates as an amplifier.

At this time, in terms of direct current, the source potential Vs is higher than the ground potential by Tt, Vs = IDS x Rb, which is the drain-source current IDS and the resistance value R1 of the bias resistor (8), υ, and the gate bias is grounded. In particular, the source-gate Vcs is 'vGs=VS==-IDS.
A bias of XRb is applied. Also, in terms of microwaves, it is grounded through a microwave chip capacitor CI). Therefore, it operates as a single power source grounded microwave amplifier.

However, in conventional microwave hybrid integrated circuits, processes such as soldering are required to attach microwave chip capacitors, and there are also disadvantages such as an increase in the process of bonding wires such as gold for electrical connections. Therefore, an object of the present invention is to provide a microwave hybrid integrated circuit which can simplify the manufacturing process by providing a capacitor structure on a substrate without mounting a chip capacitor.

In order to achieve such an object, the present invention consists of a dielectric substrate such as a ceramic substrate, and three layers: an upper metal, an insulator, and a lower metal, and the lower metal is grounded through a metalized through hole to connect the dielectric A thick film capacitor formed on a substrate, a three-terminal microwave semiconductor element mounted on the upper metal of the thick film capacitor, and a bias resistor terminal of the upper metal of the thick film capacitor and the thick film metallization. The device is equipped with a connecting thick-film metallized line, and will be described in detail below using examples.

FIG. 3(a), FIG. 3(b) and FIG. 3(c) show this invention. In the figure, (14) is an insulator such as ceramic with low dielectric loss, (15) is an upper metal that acts as a capacitor electrode, and (16) is this upper metal (15).
) and one end of the bias resistor (8).

Next, the configuration of the microwave hybrid integrated circuit having the above configuration will be explained. First, the lower metal of the source ground electrode 6), which serves as the lower metal of the capacitor.

As mentioned above, a thick film capacitor can be formed from three layers: an insulator (14) with low dielectric loss and a top metal that acts as the top electrode of the capacitor, thus operating as a single power source grounded microwave amplifier. Of course you can. Therefore, the chip capacitors shown in FIGS. 1(a) to 1(c) are not required, and the manufacturing process can be simplified.

In the above-described embodiments, it goes without saying that various transistors such as field effect transistors and junction transistors can be used as the three-terminal microwave semiconductor transistor.

As described in detail above, according to the microwave hybrid integrated circuit according to the present invention, the number of parts and work steps are reduced, so that the manufacturing process can be simplified and reliability can be improved. Further, since the thick film capacitor structure can be easily created using ceramic multilayer substrate technology, it has the advantage of being highly practical.

[Brief explanation of the drawing]

FIG. 1(a), middle of FIG. 1) and FIG. 1(C) are a plan view showing a conventional microwave hybrid integrated circuit, its A-A cross-sectional view and its n-i cross-sectional view, and FIG. Figure 1(a)~
The electrical equivalent circuit of FIG. 1(e), FIG. 3(a), middle of FIG. 3) and FIG. 3(c) are plan views showing one embodiment of the microwave hybrid integrated circuit according to the present invention. The CC sectional view and the DD sectional view, FIG. 4, are electrical equivalent circuits of FIGS. 3(a) to 3(e). 0)... Dielectric substrate, (2)... Microwave transmission line, G)... Drain electrode bias line, (4
)...Φ-gate electrode bias line, (5)...source grounded electrode, (6)...3-terminal microwave semiconductor device, (7)...microwave chip capacitor,
(8)...Bias resistance, (9)...Resistance end ground electrode, (1G)...Wire, (11)...Fist/source potential electrode, (12)...Ground Electrode, (13)・
... Metallized through hole, (14) ... Insulator, (15) ... Upper metal, (16) ... Path. Note that the same reference numerals indicate the same or equivalent parts. Agent Masuo Oiwa Figure 1 (b) i Figure 2 Figure 3 (b) ]Z Figure 4 Mr. Commissioner of the Japan Patent Office 1. Indication of the case: Japanese Patent Application No. 58-133902 2, Title of the invention: Microwave hybrid integrated circuit 3, Representative Hitoshi Katayama of the person making the amendment: Section 4, Detailed description of the invention in the attorney's specification, column 6, Amendment Contents (1) "1-resistance" on page 2, line 17 of the specification is corrected to "bias resistance (8)". (2) "Apply" on page 3, line 12 of the same book is corrected to "apply". (3) Add the following sentence between the third and fourth lines of page 5 of the same book. "In addition, Figure 4 shows the electrical equivalent circuit of Figures 3(a) to 3(c)."

Claims (1)

[Claims] A dielectric substrate such as a ceramic substrate and an upper metal. A thick film capacitor is composed of three layers: an insulator and a lower metal, and the lower metal is grounded through a metallized through hole to form the above dielectric substrate. A microwave hybrid integrated circuit comprising: a terminal microwave semiconductor element; and a thick film metallized line connecting the upper metal of the thick film capacitor and the thick film metallized bias resistor terminal.